Semiconductors
Semiconductors
Bolon Carbon ge
& Antimon Alsenic , , ,
,
,
tellurium .
a
Inthingic
&
Extrinsic
Semiconductor .
andea
sands
Valence band: energy band formed hy s series. of energy levels
containing valence electrons.
Conduction band: energy band formed by series of energy b levels
containing conduction electrons.
Band
conditio
Ba
-
a
impro
to
level
Imperity
Du
carries
e-are
majority charge
Possitive
Not
·
&
i
-
-
t
f
x
E
Majority carriers can diffuse across the pn
junction depletion region and electric field
impedes this crossing .Minority carriers
that reach the junction are swept across the
depletion region due to drift at
equilibrium net current is zero far both
electrons and holes because the diffusion
current is equal and opposite to the drift
current for both carriers.
-
⑦ ⑦
-
J
PN
as
- e-G
--
Biasing: study of VIcharacterstic after application of potential
difference.
De
detell slope
F
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o
G
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nat
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An
order of It FB and -
&
Komm
a
EBC
Common Collector We
E
= =
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3
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legian
-setustigio
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-
EB
E -
B >
- folwald Bias
Revelse Bias
C- B -
=
Em
# -
B
!
0
A =
I = A
A + =
1