TLP291

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP291
Power Supplies
Unit: mm
Programmable Controllers
Hybrid ICs

TLP291 consists of photo transistor, optically coupled to a gallium arsenide

infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio : 50% (min)
Rank GB : 100% (min) TOSHIBA 11-3C1
 Isolation Voltage : 3750 Vrms (min) Weight: 0.05 g (typ.)
 Operation temperature : -55 to 110 ˚C
 UL recognized : UL1577, File No. E67349
 cUL approved : CSA Component Acceptance Service No.5A,
Pin Configuration
File No. 67349
 SEMKO approved: EN 60065: 2002, Approved no. 1200315
TLP291
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315 1 4
 BSI approved : BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037 2 3
 Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347 1:ANODE
Maximum operating insulation voltage: 707 Vpk 2:CATHODE
Highest permissible over-voltage: 6000 Vpk 3:EMITTER
(Note) When EN 60747-5-5 approved type is needed, 4:COLLECTOR
please designate the “Option(V4)”

Construction Mechanical Rating

Creepage distance: 5.0 mm (min)
Clearance: 5.0 mm (min)
Insulation thickness: 0.4 mm (min)

Start of commercial production

2012/02
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Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C)

Current Transfer Ratio (%)

Classification (IC / IF)
TYPE IF = 5 mA, VCE = 5 V, Ta = 25°C Marking of Classification
(Note1)
Min Max
Blank 50 400 Blank, YE, Y+, GR, GB, G, G+,B
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank GB 100 400 GB
TLP291
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
Rank BLL 200 400 B

Note1: Specify both the part number and a rank in this format when ordering

(e.g.) rank GB: TLP291 (GB,E

For safety standard certification, however, specify the part number alone.

(e.g.)TLP291 (GB,E: TLP291

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Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL NOTE RATING UNIT

Input forward current IF 50 mA

Input forward current derating (Ta≥90°C) ∆IF /∆Ta -1.5 mA /°C
Input forward current (pulsed ) IFP (Note 2) 1 A
LED

Input reverse voltage VR 5 V

Input power dissipation PD 100 mW
Input power dissipation derating (Ta ≥ 90°C) ∆PD/∆Ta -3.0 mW/°C
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
DETECTOR

Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation derating(Ta≥25°C) ∆PC /∆Ta -1.5 mW /°C
Junction temperature Tj 125 °C
Operating temperature range Topr -55 to 110 °C
Storage temperature range Tstg -55 to 125 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation derating(Ta≥25°C) ∆PT /∆Ta -2.0 mW /°C
Isolation voltage BVS (Note3) 3750 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.

Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Input forward voltage VF IF = 10 mA 1.1 1.25 1.4 V

Input reverse current IR VR = 5 V - 5 μA
LED

Input capacitance CT V = 0 V, f = 1 MHz - 30 - pF

Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 - - V

DETECTOR

Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 - - V

VCE = 48 V - 0.01 0.08 μA
Dark current ICEO
VCE = 48 V, Ta = 85°C - 2 50 μA
Collector-emitter capacitance CCE V = 0 V, f = 1 MHz - 10 - pF

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Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

IF = 5 mA, VCE = 5 V 50 - 400

Current transfer ratio IC / IF %
Rank GB 100 - 400

IF = 1 mA, VCE = 0.4 V - 60 -

Saturated current transfer ratio IC / IF (sat) %
Rank GB 30 - -
IC = 2.4 mA, IF = 8 mA - - 0.3
Collector-emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA - 0.2 - V
Rank GB - - 0.3
OFF-state collector current IC (off) VF = 0.7 V, VCE = 48 V - - 10 μA

Isolation Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Total capacitance (input to output) CS VS = 0 V, f = 1 MHz - 0.8 - pF

12 14
Isolation resistance RS VS = 500 V, R.H.≤60% 1×10 10 - Ω
AC , 1 minute 3750 - -
Vrms
Isolation voltage BVS AC , 1 second, in OIL - 10000 -
DC , 1 minute, in OIL - 10000 - Vdc

Switching Characteristics (Unless otherwise specified, Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Rise time tr - 4 -

Fall time tf VCC = 10 V, IC = 2 mA - 7 -

μs
Turn-on time ton RL = 100Ω 7 -
-
Turn-off time toff - 7 -

Turn-on time ton - 2 -

RL = 1.9 kΩ (Fig.1) -
Storage time ts - 30 μs
VCC = 5 V, IF = 16 mA
Turn-off time toff - 60 -

(Fig.1) Switching Time Test Circuit

ton toff

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I F - Ta P C - Ta

160
100

(mW)
140
I F (mA)

80
120

PC
100

Collector power dissipation

60
Input forward current

80
40
60

(Note) This curve shows

20 40 (Note) This curve shows the
the maximum limit to the
maximum limit to the collector
input forward current. 20
0 power dissipation.
-20 0 20 40 60 80 100 120 0
-20 0 20 40 60 80 100 120

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

IFP-DR IF-VF

3000 100
Pules width ≤100μs
(mA)

Ta=25˚C
Input forward current (pulsed)

1000
IF

500 10
IFP (mA)

Input forward current

300 110˚C
85˚C
50˚C
25˚C
100 0˚C
1 -25˚C
-55˚C
50
(Note) This curve shows the
30
maximum limit to the input
forward current (pulsed). 0.1
10
10-3 10-2 10-1 100 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Duty cycle ratio DR Input forward voltage VF (V)

∆ V F / ∆ Ta - I F IFP - VFP

-3.2 1000
(mA)

-2.8
Input forward current derating

IFP

-2.4
ΔVF /ΔTa (mV/°C)

100
Input forward current (pulsed)

-2

-1.6

-1.2 10

-0.8 Pulse width ≤10μs

Repeative frequency=100Hz

-0.4 Ta=25°C

0.1 1 10 100 1
0.6 1 1.4 1.8 2.2 2.6 3 3.4
Input forward current IF (mA) Input forward voltage (pulsed) VFP (V)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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IC-VCE IC-VCE

50 30
Ta=25˚C Ta=25˚C
PC (max)
25
40
(mA)

(mA)
50
30 50
20
20
IC

IC
30 30
15 20
Collector current

Collector current
15
15
20 10
10
10
5
10
5 I F= 2 m A
IF=5mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC-IF I C E O - Ta

10
100
Ta=25˚C

1
(mA)

ICEO (μA)

10
IC

0.1
VCE=48V
Collector current

Dark current

24V
0.01 10V
5V
1

0.001
VCE=10V
VCE=5V
VCE=0.4V
0.0001
0.1
0 20 40 60 80 100 120
0.1 1 10 100

Input forward voltage IF (mA) Ambient temperature Ta (°C)

IC/IF -IF
1000
VCE=10V
VCE=5V
IC / IF (%)

VCE=0.4V
Current transfer ratio

100

10
0.1 1 10 100

Input forward current IF (mA)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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V C E ( s a t ) - Ta I C - Ta

0.28 100
25
Collector-emitter saturation voltage

0.24
10

Collector current IC (mA)

0.20 5
10
(V)

0.16
VCE(sat)

0.12 1
1
0.08
IF=0.5mA
0.04 IF=8mA, IC=2.4mA

IF=1mA, IC=0.2mA VCE=5V

0.00 0.1
-60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

Switching time - RL S w i t c h i n g t i m e - Ta

10000 1000
Ta=25˚C
IF=16mA
VCC=5V
toff

1000 toff 100

ts
(μs)

(μs)

ts
Switching time

Switching time

100 10
Ton

10 1

IF=16mA
ton VCC=5V
RL=1.9kΩ
1 0.1
1 10 100 -60 -40 -20 0 20 40 60 80 100 120

Load resistance RL (kΩ) Ambient temperature Ta (°C)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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Soldering and Storage
1. Soldering
1.1 Soldering

When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as

much as possible by observing the following conditions.

1) Using solder reflow

·Temperature profile example of lead (Pb) solder

(°C)

240
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Package surface temperature

210
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
160
used by the customer within the
140
described profile.

60 to 120s less than 30s

Time (s)

·Temperature profile example of using lead (Pb)-free solder

(°C)
This profile is based on the device’s
260
maximum heat resistance guaranteed
value.
Package surface temperature

230 Set the preheat temperature/heating

temperature to the optimum temperature
corresponding to the solder paste type
190 used by the customer within the
180 described profile.

60 to 120s 30 to 50s

Time (s)

Reflow soldering must be performed once or twice.

The mounting should be completed with the interval from the first to the last mountings being 2 weeks.

2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
· Please preheat it at 150°C between 60 and 120 seconds.
· Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may
be heated at most once.

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2. Storage

1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.

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EN 60747-5-5 Option:(V4)
Types : TLP291

Type designations for “option: (V4)”, which are tested under EN 60747 requirements.

(e.g.): TLP291 (V4GB-TP,E V4 : EN 60747 option

GB : CTR rank type
TP : Standard tape & reel type
E : [[G]]/RoHS COMPATIBLE (Note4 )

Note: Use TOSHIBA standard type number for safety standard application.
(e.g.): TLP291(V4GB-TP,E  TLP291

Note4: Please contact your Toshiba sales representative for details on environmental information such
as the product’s RoHS compatibility.
RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and
electronics equipment.

EN 60747 Isolation Characteristics

Description Symbol Rating Unit

Application classification
-
for rated mains voltage ≤ 150Vrms I-IV
for rated mains voltage ≤ 300Vrms I-III

Climatic classification 55 / 110 / 21 -

Pollution degree 2 -

Maximum operating insulation voltage VIORM 707 Vpk

Input to output test voltage, Method A

Vpr=1.5 × VIORM, type and sample test Vpr 1060 Vpk
tp=10s, partial discharge<5pC

Input to output test voltage, Method B

Vpr=1.875 × VIORM, 100% production test Vpr 1325 Vpk
tp=1s, partial discharge<5pC

Highest permissible overvoltage

VTR 6000 Vpk
(transient overvoltage, tpr=60s)

Safety limiting values (max. permissible ratings in case of fault,

also refer to thermal derating curve)
current (input current: IF, Psi=0mW) Isi 250 mA
power (output or total power dissipation) Psi 400 mW
temperature Tsi 150 °C

Insulation resistance 9
Rsi >
= 10 Ω
VIO=500V, Ta=Tsi

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Insulation Related Specifications

Minimum creepage distance Cr 5.0mm
Minimum clearance Cl 5.0mm
Minimum insulation thickness ti 0.4mm
Comparative tracking index CTl 175

1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.
(e.g. at a standard distance between soldering eye centers of 3.5mm).
If this is not permissible, the user shall take suitable measures.
2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuit.

VDE test sign: Marking on product

for EN 60747 V

: Marking on packing
for EN 60747 VDE

Marking Example: TLP291

1pin mark Lot No.

Option(V4) mark

Process Lot No.

Type Country of origin

e.g.) J; Japan
CTR rank mark

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Figure 1 Partial discharge measurement procedure according to EN 60747

Destructive test for qualification and sampling tests.

Method A
VINITIAL(6kV)
V
(for type and sampling tests,
destructive tests) Vpr(1060V)

t1, t2 = 1 to 10 s VIORM(707V)
t3, t4 =1s
tp(Measuring time for
partial discharge) = 10 s 0 t
t3 tP t4
tb = 12 s
tini = 60 s t1 tini t2 tb

Figure 2 Partial discharge measurement procedure according to EN 60747

Non-destructive test for100% inspection.

Method B Vpr(1325V )
V
(for sample test, non-
VIORM(707V )
destructive test)

t3, t4 = 0.1 s
tp(Measuring time for
partial discharge) =1s
tb = 1.2 s t
tP
t3 tb t4

Figure 3 Dependency of maximum safety ratings on ambient temperature

500 500 Psi

Isi
(mA) (mW)
400 400

300 300

200 200
 Psi
Isi 
100 100

0 0
0 25 50 75 100 125 150 175

Ta (°C)

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RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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