Diode Semiconductor Korea 6A05 - - - 6A10

VOLTAGE RANGE: 50 --- 1000 V

PLASTIC SILICON RECTIFIERS CURRENT: 6.0 A

FEATURES
Low cost
Diffused junction
Low leakage
R-6
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0

MECHANICAL DATA
Case:JEDEC R-6,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams Dimensions in millimeters
Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

6A05 6A1 6A2 6A4 6A6 6A8 6A10 UNITS

Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V
Maximum average forw ard rectified current
IF(AV) 6.0 A
9.5mm lead length, @TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave IFSM 400.0 A
superimposed on rated load @TJ =125
Maximum instantaneous forw ard voltage
VF 1.0 V
@ 6.0 A
Maximum reverse current @TA=25 10.0
IR A
at rated DC blocking voltage @TA =100 100.0
Typical junction capacitance (Note1) CJ 120 pF
Typical thermal resistance (Note2) RθJA 10 /W
Operating junction temperature range TJ - 55 ---- + 150
Storage temperature range TSTG - 55 ---- + 150
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient. www.diode.kr
Diode Semiconductor Korea 6A05 - - - 6A10

FIG.1 -- FORWARD DERATING CURVE FIG.2 -- TYPICAL FORWARD CHARACTERISTICS

AVERAGE FORWARD RECTIFIED CURRENT

100

INSTANTANEOUS FORWARD CURRENT

10

8 4

7 2
6
1.0
5

AMPERES
4 0.4
AMPERES

3
0.2
2 S i n g le P h a s e
H a lf W a v e 6 0 H Z

1
R e s i s t iv e o r
I n d u c t iv e L o a d
0.1

0 0.06
T J=25
0 25 50 75 100 125 150 175 0.04
Pulse Width=300uS

0.02
0.01
0.6 0.8 0.9 1.0 1.1 1.2

AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.3 --MAXIMUM NON-REPETITIVE FORWARD FIG.4 -- TYPICAL JUNCTION CAPACITANCE

SURGE CURRENT

400
PEAK FORWARD SURGE CURRENT

200

TJ=125 f=1MHz
8.3ms Single Half
CAPACITANCE, pF

TJ=25
300
Sine-Wave

100
AMPERES

200

100

10
.1 .2 .4 1.0 2 4 10 20 40 100
0
1 2 4 8 10 20 40 60 80 100

NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, VOLTS

www.diode.kr