18/10/2022, 19:07 Quiz-1-Batch-1

Dashboard / My courses / 1154_ EEE_ECE_INSTR F214 / General / Quiz-1-Batch-1

Started on Saturday, 15 October 2022, 3:00 PM

State Finished
Completed on Saturday, 15 October 2022, 3:30 PM
Time taken 30 mins
Grade 7.00 out of 30.00 (23%)

Question 1
Consider a semiconductor that is uniformly doped with Nd = 3.2×1014 cm-3 and Na = 0 with an applied electric field of E
Not answered
= 100 V/cm at 300 K. Assume that μn= 1000 cm2/V-s, μp = 0, Eg = 1.20 eV, Nc = 6.0×1019 cm-3, Nv = 1×1019cm-3. Find the
Marked out of hole concentration at 300 K.
3.00

Answer:

The correct answer is: 14166.11

Question 2
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is
Complete
true for the energy band diagram shown in the following figure?
Mark 1.00 out of
1.00

Select one:

Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor

Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor

The correct answer is:

Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor

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Question 3 The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has
Not answered a uniform electron concentration of n = 9.9x1016 cm−3 and electronic charge q = 1.6x10-19 C. If a bias of 8V is applied
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across a 1 μm region of this semiconductor, the resulting current density in this region, in kA/cm2, is .
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The correct answer is: 25.3440

Question 4
The Fermi energy level for a particular material at T = 300 K is 3.25 eV. The electrons in this material follow the Fermi-
Not answered
Dirac distribution function. Find the probability that an energy level at 3.8 eV being not occupied by an electron at T =866
Marked out of
K (assume that EF is a constant). Express your answer in percentage.
2.00

Answer:

The correct answer is: 99.94

Question 5
An abrupt silicon pn-junction has dopant concentrations of Na = 8.2×1016 cm-3 and Nd = 8.0×1015 cm-3 at T = 300 K.
Not answered
Calculate the depletion width in cm at a reverse bias of 7 V. Assume ni = 1.5×1010 cm-3. Express your answer in the
Marked out of format 99E99 format. (For example if the answer is 2.3 × 10-10 should be expressed as 2.3E-10).
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Answer:

The correct answer is: 1.178e-4

Question 6
An p+-p Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of NA1=6.9×1018 cm-
Complete 3
and NA2= 3.6×1015 cm-3 corresponding to the p+ and p regions respectively. At the operational temperature T, assume
Mark 0.00 out of
complete impurity ionization, kT/q = 25.9 mV, and intrinsic carrier concentration to be ni= 1×1010 cm-3. What is the
3.00
magnitude of the built-in potential of this device?

Answer: 0.8585

The correct answer is: 0.1958

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Question 7
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the
Complete
GaAs crystal. Which one of the following statement is true?
Mark 1.00 out of
1.00

Select one:
Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

The correct answer is: Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Question 8 The cut-off wavelength of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg= 2.5
Complete
eV is 0.496 μm.
Mark 2.00 out of
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The correct answer is: 0.4960

Question 9
An n-type gallium arsenide semiconductor is doped with Nd = 6.3×1016 cm-3 and Na = 0. The minority carrier lifetime is
Complete
τp =τn= 2×10-7. Calculate the steady-state increase in conductivity (/Ω-cm) if the carriers are generated with a uniform
Mark 3.00 out of generation rate of 9.7×1021 cm-3 s-1. Assume μn = 8500 cm2/V-s and μp = 400 cm2/V-s.
3.00

Answer: 2.7625

The correct answer is: 2.7626

Question 10 The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is
Not answered given: T=300K, electronic charge=1.6x10-19C, thermal voltage=25.9mV and electron mobility = 1350cm2/V-s, doping
Marked out of concentration ND= 1.6 ×1016 cm-3, and VS= 9 V.
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The magnitude of the electron drift current density (in kA/cm2) at x=0.5 μm is ...................

Answer:

The correct answer is: 311.0400

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Question 11 A silicon sample is uniformly doped with donor type impurities with a concentration of 1.5 ×1016/cm3.The electron and
Complete hole mobilities in the sample are 1200cm2/V−s and 400cm2/V−s respectively. Assume complete ionization of impurities.
Mark 0.00 out of The charge of an electron is 1.6×10−19C. The resistivity of the sample (in Ω−cm) is............
2.00

Answer: 0.3472

The correct answer is: 34.7222

Question 12
If Ec - Ef = 3.8*0.1 eV in gallium arsenide at T = 341 K. Calculate the values of p0. Assume that Nc = 7.24×1017 cm-3, Nv =
Not answered
1.08×1019cm-3, and Eg = 1.42 eV.
Marked out of
3.00

Answer:

The correct answer is: 4912.7585

Question 13
An n-type silicon bar 0.1 cm long and 100μm2 in cross-sectional area has a majority carrier concentration
Complete
of 6.4×1020/m3 and the carrier mobility is 0.13m2/v−s at 300oK. if the charge of an electron is 1.6×10-19 coulomb, then the
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resistance of the bar is ........ MΩ
2.00

Answer: 7.5

The correct answer is: 0.7512

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