PERI INSTITUTE OF TECHNOLOGY

DEPARTMENT OF ECE

Academic Year 2023-2024

EC3361 – ELECTRONIC DEVICES AND CIRCUITS

LABORATORY

YEAR/SEM: II/III

Prepared by

B. BAKYALAKSHMI. (AP/ECE)
 LIST OF EXPERIMENTS

1. PN Junction diode (Forward and Reverse bias)

V-I Characteristics curves

2. Zener Diode (Forward and Reverse bias)

V-I Characteristics curves

3.Half wave rectifier with filter

4. Full wave rectifier with filter

5.Design of Zener diode Regulator

6.Common Emitter input and output characteristics

7.MOSFET Drain current and Transfer characteristics.

8.Frequency response of CE amplifier

9. Frequency response of CS amplifier

10.Frequency response of CB amplifier

11. Frequency response of CC amplifier

12. Frequency response of cascode amplifier

13. CMRR measurement of Differential Amplifier

14. Class A Transformer coupled Amplifier

Ex. No.:1

PN JUNCTION DIODE (FORWARD AND REVERSE BIAS)

V-I CHARACTERISTICS CURVES
AIM:

To Plot the Volt Ampere Characteristics of PN Junction Diode under

Forward and Reverse Bias Conditions, and to find the Cut-in voltage, Static Resistance,
Dynamic Resistance under Forward and Reverse Bias.

APPARATUS REQUIRED:

Sl. No Components / Equipments Specifications Quantity

1 Diode- PN IN4007 1
2 Resistors 1kΩ 1
3 Dual Regulated Power Supply (0-30)V 1
4 Voltmeters MC (0-1)V, (0-15)V Each One
MC (0-500)µA, (0-20)
5 Ammeters Each One
mA
6 Bread Board 1
7 Connecting Wires Few

THEORY:

A diode is a PN junction formed by a layer of P type and layer of N type

Semiconductors. Once formed the free electrons in the N region diffuse across the junction and
combine with holes in P region and so a depletion Layer is developed. The depletion layer consists
of ions, which acts like a barrier for diffusion of charged beyond a certain limit. The difference of
potential across the depletion layer is called the barrier potential. At 2.5degree the barrier potential
approximately equal 0.7v for silicon diode and 0.3v for germanium diode.
When the junction is forward bias, the majority carrier acquired sufficient energy to
overcome the barrier and the diode conducts. When the junction is reverse biased the depletion
layer widens and the barrier potential increases. Hence the Majority carrier cannot cross the
junction and the diode does not conduct. But there will be a leakage current due to minority
carrier. When diode is forward biased, resistance offered is zero, and when reverse biased
resistance offered is infinity. It acts as a perfect switch.
SYMBOL & PIN DIAGRAM:

CIRCUIT DIAGRAM:

FORWARD BIAS:

REVERSE BIAS:
TABULATION:
FORWARD BIAS: REVERSE BIAS:

Vf(volts) If(mA) Vr(volts) Ir(mA)

MODEL GRAPH:
PROCEDURE:

FORWARD BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to anode of the diode and
negative terminal to cathode of the diode.
3. Forward voltage Vf across the diode is increased in small steps and the forward
current is noted.
4. The readings are tabulated. A graph is drawn between V f and I f.

REVERSE BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to cathode of the diode and
negative terminal to anode of the diode.
3. Reverse voltage Vf across the diode is increased in small steps and the Reverse
current is noted.
4. The readings are tabulated. A graph is drawn between V r and I r.

REVIEW QUESTIONS:

1. How a PN junction is formed?

2. In what way the width of depletion region can be varied?
3. What is potential barrier?
4. In forward bias condition the current condition is due to
5. What is reverse saturation current Ico?
6. How diodes act as switch?
7. What is Dynamic Resistance?
8. Why it is called as Diode?
9. What are the majority carriers of P-type and N-type semiconductor?
10. What is an ideal diode? How does it differ from a real diode?

RESULT:

Thus the characteristics of PN diode were drawn and the necessary parameters are
calculated from the graph.
Ex. No.: 2
CHARACTERISTICS OF ZENER DIODE

AIM:

To Obtain the Forward Bias and Reverse Bias characteristics of a Zener diode, and to
find the Zener Break down Voltage from the Characteristics.

APPARATUS REQUIRED:

Sl. No Components / Equipments Specifications Quantity

1 Diode- Zener FZ3.2 1
2 Resistors 1kΩ 1
3 Dual Regulated Power Supply (0-30)V 1
4 Voltmeters MC (0-1)V, (0-10)V Each One
5 Ammeters MC (0-20)mA 1
6 Bread Board 1
7 Connecting Wires Few

THEORY:

Zener diodes have many of the same basic properties of ordinary semiconductor
diodes. When forward biased, they conduct in the forward direction and have the same turn on
voltage as ordinary diodes. For silicon this is about 0.6 volts.
In the reverse direction, the operation of a Zener diode is quite different to an ordinary
diode. For low voltages the diodes do not conduct as would be expected. However, once a certain
voltage is reached the diode "breaks down" and current flows. Looking at the curves for a
Zener diode, it can be seen that the voltage is almost constant regardless of the current
carried. This means that a Zener diode provides a stable and known reference voltage. Hence
they are used as Voltage regulators.
SYMBOL & PIN DIAGRAM:

CIRCUIT DIAGRAM: FORWARD

BIAS:

REVERSE BIAS:
TABULATION:

FORWARD BIAS: REVERSE BIAS:

Vf(volts) If(mA) Vr(volts) Ir(mA)

MODEL GRAPH:
PROCEDURE:

FORWARD BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to anode of the diode and negative
terminal to cathode of the diode.
3. Forward voltage Vf across the diode is increased in small steps and the forward
current is noted.
4. The readings are tabulated. A graph is drawn between V f and I f.

REVERSE BIAS:

1. The connections are made as per the circuit diagram.

2. The positive terminal of power supply is connected to cathode of the diode and
negative terminal to anode of the diode.
3. Reverse voltage Vf across the diode is increased in small steps and the Reverse current is
noted.
4. The readings are tabulated. A graph is drawn between V r and I r.

REVIEW QUESTIONS:

1. How Zener diode acts as a voltage regulator?

2. Explain working of a Zener Diode.
3. What is the cut-in voltage of Zener diode?
4. Differentiate between Zener Breakdown and Avalanche breakdown.
5. Why Zener diode is often preferred than PN diode?
6. List the application of Zener diode.
7. Define Zener breakdown voltage.
8. List the other Zener diode with different breakdown voltages.
9. Can we use Zener diode as a switch?
10. What will happens if PN regions are heavily doped in Zener diode?

RESULT:

Thus the characteristics of Zener diode were drawn and the necessary parameters are
determined from the graph.
 Ex. No.: 3
HALF WAVE RECTIFIER

AIM:
To construct a half wave rectifier with simple capacitor filter and to measure its
ripple factor from the output waveforms.

APPARATUS REQUIRED:

S NO APPARATUS RANGE QUANTITY

1 RESISTOR 1K 1
2 CAPACITOR 470 μf 1
3 DIODE IN4007 1
4 STEP DOWN 1
TRANSFORMER
5 BREAD BOARD 1
6 CONNECTING FEW
WIRES
7 CRO 1

THEORY:

A Half wave rectifier is a device which converts ac voltage to pulsating dc voltage using
one PN junction diode. The ac voltage (230 V, 50 HZ) is connected to the primary of the
transformer. The transformer steps down the ac voltage. Thus, with suitable turns ratio we get
desired ac secondary voltage. The rectifier circuit converts this ac voltage in to a pulsating dc
voltage. Half wave rectifier conducts during positive half cycle and gives output in the form of
positive sinusoidal pulses. Hence the output is called pulsating dc. A pulsating dc voltage
containing large varying component called ripple in it. The capacitor filter is used after rectifier
circuit, which reduces the ripple content in the pulsating dc. Thus filter converts pulsating dc in to
pure dc.

Ripple Factor:
The output of the rectifier is of pulsating dc type. The amount of ac content in the output can
be mathematically expressed by a factor called ripple factor.
CIRCUIT DIAGRAM:

Half wave rectifier with filter

MODEL GRAPH:
TABULATION:

CALCULATION:

Ripple Factor = R.M.S Value of ac component

Average dc component = Vrms/Vdc) 2
Where, Vrms = Vm/2 ; Vdc = Vm/Π
PROCEDURE:
1. The circuit connections are made as per the circuit diagram.
2. First without connecting the capacitive filter, note down the amplitude and time
period of the rectified waveform.
3. Now connect the capacitive filter and note down the amplitude and
time period of the rectified waveform.
4. Connect the CRO across the load and measure the full load voltage then
remove The load and measure the no load voltage.
5. Plot the graph and calculate the efficiency.

RESULT:
Thus the half wave rectifier was constructed and input, output waveforms were
drawn.
Ripple Factor r =
Ex. No.: 4

FULL WAVE RECTIFIER WITH AND WITHOUT FILTERS

AIM: 1. To obtain the load regulation and ripple factor of a full-wave rectifier by
using (a). without Filter
(b). with Filter
2. To observe the input and output waveforms of a full-wave rectifier.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Diodes IN 4007 (Si) 2
2 Decade Resistance Box (1KΩ-10 KΩ) 1
3 Transformer 230 V AC 1
4 Capacitor 100µF 1
5 Bread Board
6 Digital Voltmeter (0-20)V (AC & DC) 2
7 Connecting Wires As Required

THEORY:
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2.
During positive half cycle of secondary voltage (input voltage), the diode D1 is forward biased
and D2is reverse biased.
The diode D1 conducts and current flows through load resistor R L. During negative half
cycle, diode D2 becomes forward biased and D1 reverse biased. Now, D2 conducts and current
flows through the load resistor RL in the same direction. There is a continuous current flow
through the load resistor RL, during both the half cycles and will get unidirectional current as
show in the model graph. The difference between full wave and half wave rectification is that a
full wave rectifier allows unidirectional (one way) current to the load during the entire 360
degrees of the input signal and half-wave rectifier allows this only during one half cycle (180
degree).
CIRCUIT DIAGRAM:

(a) WITHOUT FILTER:

(b) WITH FILTER:

PROCEDURE:

1. Connections are made as per the circuit diagram.

2. Connect the primary side of the transformer to ac mains and the secondary side to
the rectifier input.
3. By using the multimeter, measure the ac input voltage of the rectifier and, ac and
dc voltage at the output of the rectifier.
4. Find the theoretical value of dc voltage by using the formula,
Vdc=2Vm/П
Where, Vm= √2Vrms, (Vrms=output ac voltage.)
5. Now, the Ripple factor is calculated by using the formula
Γ = ac output voltage (Vac)/dc output voltage (Vdc)

6. By increasing the value of the resistance from 1 KΩ to 10KΩ, the voltage across the
load (VL) and current (IL) flowing through the load are measured.
7. Draw a graph between load voltage (VL) and load current (IL) by taking VL on X-axis
and IL on y-axis.
8. From the value of no-load voltage (VNL), the % regulation is to be calculated from
the theoretical calculations given below.
INPUT AND OUTPUT WAVEFORMS:
 THEORETICAL CALCULATIONS FOR RIPPLE FACTOR & % REGULATION:

(a) WITHOUT FILTER:

For a Full-Wave Rectifier,

Vrms=Vm/√2

Vdc=2Vm/П

Therefore, Ripple factor Γ=√ (Vrms/ Vdc )2 -1 = 0.482

% regulation = [(VNL-VFL)/VFL]*100

(b) WITH FILTER:

Ripple factor for a Full-Wave Rectifier is Γ=1/ (2√3 fRC).

Where f =50Hz

C =100µF

R= (1-10) KΩ

Therefore, for 1KΩ, Ripple factor, Γ = 0.0577

% regulation = [(VNL-VFL)/VFL]*100

OBSERVATIONS:

(a) WITH OUT FILTER:

VNL = V

Load
S.No Vac(v) Vdc(v) Γ= Vac/ Vdc % Regulation
Resistance
(KΩ
)
 (b) WITH FILTER: VNL = V

PRECAUTIONS:

Load
S.No Vac(v) Vdc(v) Γ= Vac/ Vdc % Regulation
Resistance
(KΩ
)

1. The primary and secondary sides of the transformer should be carefully identified.
2. The polarities of the diode should be carefully identified.
3. While determining the % regulation, first Full load should be applied and then it should be
decremented in steps.

RESULT:
The Ripple factor and the % regulation for the Full-Wave Rectifier with and without filters are
calculated.
1. The Ripple factor of Full-Wave Rectifier without filter is
2. The Ripple factor of Full-Wave Rectifier with filter is
3. The % Regulation of Full-Wave Rectifier without filter is
4. The % Regulation of Full-Wave Rectifier with filter is
 Ex. No.: 5

DESIGN OF ZENER DIODE REGULATOR

Aim: To observe and draw the Regulation characteristics of a Zener diode.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Zener Diode (IN 4735A) 1
2 Resistors 1KΩ, 10KΩ 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA 1
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

CIRCUIT DIAGRAM:
REGULATION CHARACTERISTICS:

PROCEDURE:

1. Connections are made as per the circuit diagram.

2. The Regulated power supply voltage is increased in steps.
3. The voltage across the diode (Vz.) remains almost constant although the current through
the diode increases. This voltage serves as reference voltage.
4. The zener current (lz), and the Zener voltage (Vz.) are observed and then noted in the
tabular form.
5. A graph is plotted between zener current (Iz) on y-axis and zener voltage (Vz) on x-axis.
 REGULATION CHARACTERISTICS:

S.No Zener Voltage Zener Current (IZ) (mA)

(VZ)
(volts)

RESULT: The Regulation characteristics of a Zener diode is observed.

Ex. No.: 6

COMMON EMITTER INPUT AND OUTPUT CHARACTERISTICS

AIM:
To plot the Input and Output characteristics of a transistor connected in
Common Emitter Configuration and to find the dynamic resistance and
amplification factor.

APPARATUS REQUIRED:

Sl. No Components / Equipments Specifications Quantity

Max Rating : 50V 1A,
1 Transistor BC107 1
3W
2 Resistors 1kΩ, (or) 470Ω 2
3 Dual Regulated Power Supply (0-30)V 1
4 Voltmeters MC (0-2)V, (0-10)V Each One
MC (0-25)mA,
5 Ammeters Each One
(0-100)µA
6 Bread Board 1
7 Connecting Wires Few

THEORY:

A Bipolar Junction Transistor or BJT is a three terminal device having two PN-
junctions connected together in series. Each terminal is given a name to identify it and these are
known as the Emitter (E), Base (B) and Collector (C). There are two basic types of bipolar
transistor construction, NPN and PNP, which basically describes the physical arrangement of
the P-type and N-type semiconductor materials from which they are made. Bipolar
Transistors are "CURRENT" Amplifying or current regulating devices that control the amount of
current flowing through them in proportion to the amount of biasing current applied to their
base terminal.
The principle of operation of the two transistors types NPN and PNP, is exactly the
same the only difference being in the biasing (base current) and the polarity of the power
supply for each type. In CE configuration, Emitter is common to both the input and output as
shown in figure. The direction of the arrow in the symbol shows current flow between the
base and emitter terminal, pointing from the positive P-type region to the negative N-type
region, exactly the same as for the standard diode symbol. For normal operation, the emitter-base
junction is forward- biased and the collector-base junction is reverse-biased.

PIN DIAGRAM OF BC107

CIRCUIT DIAGRAM: COMMON EMITTER CIRCUIT CHARACTERISTICS:

MODEL GRAPH:
TABULATION:

INPUT CHARACTERISTICS:

OUTPUT CHARACTERISTICS:
DESCRIPTION:
Input Characteristics: The variation of the base current IB with the base-emitter voltage VBE
keeping the collector-emitter voltage VCE fixed, gives the input characteristic in CE mode.
Input Dynamic Resistance (ri): This is defined as the ratio of change in base emitter voltage
(∆VBE) to the resulting change in base current (∆I B) at constant collector-emitter voltage
(VCE). This is dynamic and it can be seen from the input characteristic, its value varies with
the operating current in the transistor:

The value of ri can be anything from a few hundreds to a few thousand ohms. Output
Characteristics: The variation of the collector current IC with the collector- emitter voltage VCE is
called the output characteristic. The plot of IC versus VCE for different fixed values of IB gives one
output characteristic. Since the collector current changes with the base current, there will be
different output characteristics corresponding to different values of IB.
Output Dynamic Resistance (ro): This is defined as the ratio of change in collector-emitter
voltage (∆VCE) to the change in collector current (∆IC) at a constant base current IB.
The high magnitude of the output resistance (of the order of 100 kW) is due to the reverse biased

state of this diode.

Transfer Characteristics: The transfer characteristics are plotted between the input and output
currents (IB versus IC). Both IB and IC increase proportionately.
Current amplification factor (β)
This is defined as the ratio of the change in collector current to the change in base current at a
constant collector-emitter voltage (VCE) when the transistor is in active state.

This is also known as small signal current gain and its value is very large. The ratio of IC and
IB we get what is called dc of the transistor. Hence,

Since IC increases with IB almost linearly, the values of both dc and ac are nearly equal.
PROCEDURE:
TO FIND THE INPUT CHARACTERISTICS:

1. Connect the circuit as in the circuit diagram.

2. Keep VBB and VCC in zero volts before giving the supply
3. Set VCE = 1 volt by varying VCC and vary the VBB smoothly with fine control such that
base current IB varies in steps of 5μA from zero up to 100μA, and note down the
corresponding voltage VBE for each step in the tabular form.
4. Repeat the experiment for VCE =1 volt and 2 volts.
5. Draw a graph between VBE vs. IB against VCE = Constant.

TO FIND THE OUTPUT CHARACTERISTICS:

1. Start VEE and VCC from zero Volts.
2. Set the IB = 20μA by using VBB such that, VCE changes in steps of 0.2 volts from zero up
to 10 volts, note down the corresponding collector current I C for each step in the
tabular form.
3. Repeat the experiment for IE = 20μA and IE = 40μA, tabulate the readings.
4. Draw a graph between VCE Vs IC against IB = Constant.
REVIEW QUESTIONS:

1. Why BJT is called current controlled device?

2. Why CE configuration is commonly used for amplifier circuits?
3. Why IB vs. VBE plots move outwards for higher values of VCE in CE input
characteristics?
4. What is indicated by B, C and 107 in BC107?
5. What are the regions of operation of a transistor?
6. Can transistor be replaced by two back to back connected diodes?
7. To operate a transistor as amplifier, emitter junction is forward biased and collector
junction is reverse biased. Why?
8. What is the relation between α, β and γ and mention the range of β for BJT?
9. List the current components of BJT in CE configuration.
10. Why the doping of collector is less compared to emitter?
11. What is the difference between CE and emitter follower circuit?
12. What is the phase relation between input and output?
13. Draw diagram of CE configuration for PNP transistor?
14. What is the power gain of CE configuration?
15. What are the applications of CE configuration?

RESULT:
Thus the input and output characteristic of BJT in Common Emitter configuration were
plotted and the dynamic resistance and amplification factor were obtained.
Ex. No.: 7

MOSFET DRAIN AND TRANSFER CHARACTERISTICS

AIM:

AIM: To plot the Transfer and Drain characteristics of MOSFET and

determine Trans conductance and output Resistance.

APPARATUS REQUIRED:

S.no Apparatus Range Qty

1 MOSFET IRF 1 No
740
2 Resistor 560Ω 1 No
3 Ammeter (DC) 0- 1 No
60mA
4 Voltmeter (DC) 0-60V 1 No
5 Voltmeter (DC) 0-30V 1 No
6 Multimeter - 1 No
7 VRPS 0-30V 3
Nos
8 Connecting wires - Few

THEORY:
A MOSFET (Metal oxide semiconductor field effect transistor) has three terminals called
Drain, Source and Gate. MOSFET is a voltage-controlled device. It has very high input
impedance and works at high switching frequency.
MOSFET’s are of two types 1) Enhancement type 2) Depletion type.

PROCEDURE:
A) Transfer Characteristics:
1. Make the connections as per the circuit diagram.
2. Initially keep V1 and V2 at 0 V.
3. Switch ON the regulated power supplies. By varying V1, set VDS to
some constant voltage say 5V.
4. Vary V2 in steps of 0.5V, and at each step note down the
corresponding values of VGS and ID. (Note: note down the value of
VGS at which ID starts increasing as the threshold voltage).
5. Reduce V1 and V2 to zero.
 6. By varying V1, set VDS to some other value say 10V.
7. Repeat step 4.
8. Plot a graph of VGS versus ID for different values of VDS.

B) Drain or Output Characteristics:

1. Make the connections as per the circuit diagram.
2. Initially keep V1 and V2 at zero volts.
3. By varying V2, set VGS to some constant voltage (must be more than
Threshold voltage).
4. By gradually increasing V1, note down the corresponding value of V DS
and ID. (Note: Till the MOSFET jumps to conducting state, the
voltmeter which is connected across device as VDS reads
approximately zero voltage. Further increase in voltage by V1 source
cannot be read by VDS, so connect multimeter to measure the voltage
and tabulate the readings in the tabular column).
5. Set VGS to some other value (more than threshold voltage) and repeat step 4.
6. Plot a graph of VDS versus ID for different values of VGS.

CIRCUIT DIAGRAM OF MOSFET CHARACTERISTICS:

MODEL GRAPH:

TABULAR COLUMN:
B) Transfer Characteristics:

VDS1= Volts VDS2= Volts

VGS (V) ID (mA) VGS (V) ID (mA)

C) Drain Characteristics:

VGS1= Volts VGS2= Volts

VDS (V) ID (mA) VDS (V) ID (mA)

Pin configuration of MOSFET:

CALCULATION:

Trans conductance:

gm = ∆ID = mho at constant VDS

∆VGS

Output Resistance:
∆VDS
R0 = = Ω at constant VGS
∆ID

RESULT:
Thus the drain and transfer characteristics of MOSFET were plotted and the output
resistance and transconductance were obtained.
Ex. No.: 8

FREQUENCY RESPONSE OF CE AMPLIFIER

AIM: 1. To obtain the frequency response of the Common Emitter BJT Amplifier.
2. To Measure the Voltage gain and Bandwidth of CE amplifier.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Transistor (BC-107) 1
2 Resistors 1KΩ, 4.7KΩ, 10KΩ, 1
15 KΩ , 68 KΩ
3 Capacitors 10µF 2
47 µF 1
4 Bread Board 1
5 Regulated Power Supply (0-30)V DC 1
6 Function Generator (100-1M)Hz 1
7 CRO (100-20M)Hz 1
7 Connecting Wires As Required

THEORY:

The CE amplifier provides high gain &wide frequency response. The emitter lead is
common to both input & output circuits and is grounded. The emitter-base circuit is forward
biased. The collector current is controlled by the base current rather than emitter current. The
input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current. When +ve half-cycle is fed to the input circuit, it opposes the forward bias of
the circuit which causes the collector current to decrease, it decreases the voltage more –ve.
Thus when input cycle varies through a -ve half-cycle, increases the forward bias of the circuit,
which causes the collector current to increases thus the output signal is common emitter
amplifier is in out of phase with the input signal.
CIRCUIT DIAGRAM:

PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, vary the frequency from 50Hz to 1MHz in
regular steps and note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)

5. Calculate the Voltage Gain in dB by using Voltage Gain Av(dB) = 20 log10 (Vo/Vs).
6. Plot the Graph by taking Voltage gain (dB) on x-axis and frequency (Hz) on y-axis.
7. The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is lower 3-dB frequency
f2 is upper 3-dB frequency
OBSERVATIONS:
Vs = V

Input Output
S.No Voltage Voltage Gain (dB)
Frequency Voltage
Gain=Vo/V =20 log10 (Vo/Vs)
(Hz) (Vo) (volts)
s

FREQUENCY RESPONSE:

RESULT: The Voltage gain and Bandwidth of CE amplifier is measured and the frequency
response of the CE Amplifier is obtained.
1. The Voltage gain of CE Amplifier is .
2. The Bandwidth of CE Amplifier is .
Ex. No.: 9

FREQUENCY RESPONSE OF CS AMPLIFIER

AIM:
To find the voltage gain of a CS amplifier and to find its frequency response

APPARATUS: FET BFW10

RESISTOR
Capacitors
Signal generator &CRO

CIRCUIT DIAGRAM:

THEORY:

The CS amplifier is a small signal amplifier. For good bias stability, the source resistor voltage
drop should be as large as possible. Where the supply voltage is small, Vs may be reduced to a
minimum to allow for the minimum level of Vds.R2 is usually selected as 1MΏ or less as for BJT
capacitor coupled circuit, coupling and bypass capacitors should be selected to have the smallest
possible capacitance values. The largest capacitor in the circuit sets the circuit low 3dB frequency
(capacitor C2). Generally, to have high input impedance FET is used. As in BJT circuit RL is
usually much larger than Zo and Zi is often much larger than Rs.
PROCEDURE:

1. Connect the circuit as per the circuit diagram

2. Give 1 KHz signal and 25 mv (P-P) as Vs from signal generator.
3 Observe the output on CRO for proper working of the amplifier.
4 After ensuring the amplifier function, vary signal frequency from 50 Hz to 600
Hz in proper steps for 15-20 readings keeping Vs =25mv(P- P) at every
frequency note down the resulting output voltage and tabulate in a table
5. Calculate gain in dB and plot on semi log graph paper for frequency Vs gain
in dB

TABULAR FORM:
Input voltage =

S.NO FREQUENCY OUTPUT GAIN Av=Vo/Vi GAIN IN dB

VOLTAGE(Vo) 20 log gain

MODEL GRAPH:

RESULT: The voltage gain of a CS amplifier and its frequency response were found.
Ex. No.: 10

FREQUENCY RESPONSE OF CB AMPLIFIER

AIM: To find the voltage gain of a CB amplifier and to find its frequency response.

EQUIPMENTS REQUIRED

S.NO EQUIPMENT RANGE QUANTITY

1 Transistor BC 547 1
2 RPS (0-30)V 1
3 Resistor 22 K 1
4 Resistor 4.7 K 1
5 Resistor 330 Ω 1
6 Resistor 1.2 K 1
7 Capacitor 1 uf 3
8 Bread Board - 1
9 Single strand Wires - -
10 CRO 30 MHz 1
11 CRO Probes - 3
12 Function Generator (0 - 3) MHz 1

THEORY
An amplifier is used to increase the signal level; the amplifier is use to get a larger signal output from a
small signal input The transistor can be used as a amplifier, if it is biased to operate in the active region,
i.e. base-emitter junction is to be forward biased, while the base –collector junction to be reverse biased.
Common-Base amplifier is constructed using self-bias circuit. The resistors R 1, R2 and RE are biasing
resistors. Acts as a potential divider. Due to the change in the temperature or β, the base current increases
so this makes to increase the collector current I C, therefore a Reverse Leakage Current I CO increases hence
this affects the stability of transistor. By providing an emitter resistor R E, it creates a voltage drop across
RE therefore the increased emitter current due to IC starts to flow through RE to ground and this
makes in the reduction of Base Emitter Voltage V BE. Due to reduction in VBE, base current IB reduces and
hence collector Current IC also reduces and the output remains constant.
For the common base amplifier, the AC Input resistance is typically low from 10 to 100Ω. The
output resistance of CB amplifier is typically high from 50KΩ to 1MΩ. Typical values of voltage
amplification (Av) for CB amplifier vary from 50 to 300. The current amplification is always less than 1.
The basic CB amplifying action was proposed for transferring the current from low resistance to high
resistance circuit.
PROCEDURE

1. Connect the circuit as per the circuit diagram

2. Set Vs = 50mV using signal generator.
3. Keep the input voltage constant; vary the frequency from 50 Hz to 3 MHz in steps.
4. Note down the corresponding output voltage.
5. Plot the graph gain Vs frequency.
6. Calculate the bandwidth from the graph.
TABULATION

Vin =

Frequency Output Voltage Gain = 20 log (Vo / Vi)

SL.NO
(Hz) (Vo) (db)

RESULT: The voltage gain of a CB amplifier and its frequency response were found.
Ex. No.: 11

FREQUENCY RESPONSE OF CC AMPLIFIER

AIM:
To find the voltage gain of a CC amplifier and to find its frequency response.

EQUIPMENTS REQUIRED:

S.NO EQUIPMENT RANGE QUANTITY

1 Transistor BC 547 1
2 RPS (0-30)V 1
3 Resistor 150 K Ω 2
4 Resistor 10 K Ω 1
5 Resistor 4.7K Ω 1
6 Resistor 1.2 K 1
7 Capacitor 1 uf 2
8 Bread Board - 1
9 Single strand Wires - -
10 CRO (0 - 30) MHz 1
11 CRO Probes - 3
12 Function Generator (0 - 3) MHz 1

THEORY

The d.c biasing in common collector is provided by R1, R2 and RE. The load resistance is
capacitor coupled to the emitter terminal of the transistor.
When a signal is applied to the base of the transistor, V B is increased and decreased as the
signal goes positive and negative, respectively. Considering V BE is constant the variation in the V B
appears at the emitter and emitter voltage V E will vary same as base voltage VB . Since the emitter is
output terminal, it can be noted that the output voltage from a common collector circuit is the same as its
input voltage. Hence the common collector circuit is also known as an emitter follower.
 PROCEDURE

1. Connect the circuit as per the circuit diagram

2. Set Vs = 2V using signal generator.
3. Keep the input voltage constant; vary the frequency from 50 Hz to 1 MHz in steps.
4. Note down the corresponding output voltage.
5. Plot the graph gain Vs frequency.
6. Calculate the bandwidth from the graph.
 TABULATION

Vin =

Frequency Output Voltage Gain = 20 log (Vo / Vi)

SL.NO
(Hz) (Vo) (db)

RESULT: The voltage gain of a CC amplifier and its frequency response were found.
Ex. No.: 12

FREQUENCY RESPONSE OF CASCODE AMPLIFIER

AIM:
To design and construct a cascode amplifier circuit and to draw its frequency response graph.

EQUIPMENTS REQUIRED

S.NO EQUIPMENT RANGE QUANTITY

1 Transistor BC 547 2
2 RPS (0-30)V 1
3 Resistor 1.2K, 33 K,22K, 12K 1
4 Resistor 680Ω 1
5 Capacitor 1 uf, 2.2uf 2
6 Bread Board - 1
7 Single strand Wires - -
8 CRO (0 - 30) MHz 1
9 CRO Probes - 3
10 Function Generator (0 - 3) MHz 1

THEORY

A cascode amplifier comprises of a common emitter amplifier and a common base amplifier
stage in cascade. In the circuit diagram Q1 common base configuration and Q2 is common emitter
configuration. Principal advantage of this circuit is its low internal capacitance which is a limiting factor
gain at high frequencies. Cascode amplifier can able to amplify wide range of frequencies than that is
possible with CE amplifier. This is because no high frequency feedback occurs from the output back to
input through the miller capacitance as it occurs in transistor CE configuration. Cascode amplifier
provides same voltage gain of CE amplifier but in wide range of frequencies. The advantage of CE and
CB stages are put together in cascode connection.

PROCEDURE

1. Connect the circuit as per the circuit diagram

2. Set Vs = 50mV using signal generator.
3. Keep the input voltage constant; vary the frequency from 50 Hz to 1 MHz in steps.
4. Note down the corresponding output voltage.
5. Plot the graph gain Vs
frequency.
6. Calculate the bandwidth from the
graph
CASCODE AMPLIFIER CIRCUIT DIAGRAM
 TABULATION

Vin =

Frequency Output Voltage Gain = 20 log (Vo / Vi)

SL.NO
(Hz) (Vo) (db)

RESULT: The cascode amplifier circuit was constructed and its frequency response was drawn.
Ex. No.: 13

CMRR MEASUREMENT OF DIFFERENTIAL AMPLIFIER

AIM

To construct a differential amplifier circuit for single input balanced output in the common mode
and differential mode configuration and study the output waveform and to find Common Mode Rejection
Ratio (CMRR).

EQUIPMENTS REQUIRED

S.NO EQUIPMENT RANGE QUANTITY

1 Transistor BC 107 2
2 Dual trace Regulated power supply (0-30)V 1
3 Resistor 10 K 2
4 Resistor 4.7 k 1
5 Function Generator (0-3)MHz 1
6 Bread Board - 1
7 Single strand Wires - -
8 CRO (0-30)MHz 1
9 CRO Probes - 4

THEORY

The Differential amplifier amplifies the difference between two input signals. The
transistorized differential amplifier consists of two ideal emitter biased circuits. The differential
amplifier circuit is obtained by connecting the two emitter terminals E 1 and E2. Hence RE is the parallel
combination of RE1 and RE2. The output is taken between the two collector terminals C 1 and C2.Hence we
say this connection as balanced output or double ended output. It works in two modes of operation.
Differential mode operation
In the differential mode operation two input signals (V1 and V2) are different in magnitudes and
opposite in phase and it produces the difference between the two input signals (V 1~V2).The differential
mode gain (AD) can be calculated by AD =Rc * β / 2* hie.
Common mode operation
In the common mode operation two input signals are same in magnitude and phase. At emitter
resistance RE both the input signal appears across R E and adds together since it just acts like an emitter
follower. Therefore, RE carries a signal current and provides negative feedback. This feedback reduces
the common mode gain of the differential amplifier. The Common mode gain Ac can be calculated by
|Ac| = Rc * β / hie + (2Re [1+ β])
CMRR
CMRR (Common Mode Rejection Ratio) is defined as the ratio of differential gain to common
 mode gain. Ideally the CMRR should be infinity. CMRR = 20 log (AD / Ac)

PROCEDURE

Differential mode configuration:

1. Connections are given as per circuit diagram

2. Set Vs =50 mV, using signal generator
3. Keeping the input voltage constant vary the frequency from 50Hz to1MHz in regular steps
4. Observe both input and output on the CRO (sine wave)
5. The differential gain is calculated at mid frequency range where the magnitude of the sine wave
is maximum.
6. The differential gain is calculated by Ad = Vo / Vi

Common mode configuration

1. Connections are given as per circuit diagram

2. Set Vs =50 mV, using signal generator
3. Keeping the input voltage constant vary the frequency from 50Hz to1MHz in regular steps
4. Observe both input and output on the CRO (sine wave)
5. The common mode gain is calculated at mid

frequency range where the magnitude of the sine

wave is maximum.

6. The Common mode gain is calculated by Ac = Vo / Vi

CMRR is calculated by substituting the practical

values of Ad and Ac in the formula

CMRR = 20 log (AD / Ac)

TABULATION DIFFERENTIAL

MODE

Practical
Input Output Theoretical
S.NO Differential gain
Amplitude (Vi) Amplitude (Vo) Differential
(Vo / Vi)
(Volts) (Volts) gain (Ad)
(Ad)

COMMON MODE

Practical
Input Output Theoretical
S.NO Differential gain
Amplitude (Vi) Amplitude (Vo) Differential
(Vo / Vi)
(Volts) (Volts) gain (Ac)
(Ac)

CMRR
S.NO Theoretical CMRR Practical CMRR = 20 log (AD / Ac)

RESULT

Thus constructed a differential amplifier circuit for single input balanced output in the
common mode and differential mode configuration and studied the output waveform, also its
CMRR has been determined and verified practically.

Differential mode :

Common mode :

CMRR :
Ex. No.: 14

CLASS -A POWER AMPLIFIER (TRANSFORMER COUPLED)

AIM: To observe the input and output waveforms and to calculate the efficiency.

EQUIPMENT REQUIRED:
APPARATUS REQUIRED:
Power supply 0-30V- 1 No.
CRO 20MHz - 1 No.
Digital multimeter - 1 No.
Signal generator 1Hz - 1MHz - 1 No.
COMPONENTS REQUIRED:
Resistors 33KΩ - 1N0
5.6KΩ -2NO
470Ω -1NO
Capacitors 47uf -1NO
2.2uf - 1NO
TRANSFORMER -
1NO
CIRCUIT DIAGRAM:

THEORY:

The amplifier is said to be class A power amplifier if the q point and the input
signal are selected such that the output signal is obtained for a full input cycle. For this
class the position of q point is approximately y at the midp oint of the load line. For
all the values of input signal the transistor remains in the active region and never
entire into the cutoff or saturation region. The collector current flows for 3600 (life
cycle) of the input signal in other words the angle of the collector current flow is 3600
the class A amplifiers are further classified as directly coupled and transformer coupled
and transformer coupled amplifiers in directly coupled type. The load is directly
connected in the collector circuit while in the transformer coupled type, the load is
 coupled to the collector using the transformer.

PROCEDURE:

1. CONNCECT the circuit as per the circuit diagram

2. Set Vs (say 250 to 300 mV), at 10 KHz using signal generator.

3. Connect milli ammeter to the ammeter terminals

4. By keeping the input voltage constant, vary the frequency from 0 to

1MHz in regular steps.

5. Note down the corresponding output voltage from CRO

6. Calculate the DC input power using the formula Pdc= VccIc

7. Calculate the AC output power using the formula Pac = VO2/8R L

8. Calculate the efficiency n = Pac /Pdc

9. Plot the graph between Gain (db) and frequency.

10. Calculate bandwidth from the graph.

OBSERVATIONS:
VO = , VI =

VCC =

CALCULATIONS:

Efficiency (Pac/ Pdc) = _

PDC = Vm/2RL = V2pp/8RL

%n = Pac/ PDC X 100

GRAPH: I/P

O/P

RESULT: Gain and frequency as observed of Class A power amplifier.

%n = Pac/ Pdc x 100 =