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SP Constants 2024

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Yusif Memmedov
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10 views1 page

SP Constants 2024

Uploaded by

Yusif Memmedov
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Properties of Si and GaAs at T=300K Si GaAs Ge Unit

Intrinsic carrier density ( n i ) 1.5 1010 1.8 106 2.4 1013 cm-3
Mobility of electrons (  n ) 1350 8500 3900 cm2/(V.s)
Mobility of holes (  p ) 480 400 1900 cm2/(V.s)
Effective density of the state function in 2.8 1019 4.7 1017 1.04 1019 cm-3
Conduction Band (NC0)
Effective density of the state function in 1.04 1019 7 1018 6 1018 cm-3
Valence Band (NV0)
Effective mass of electrons (mn*) 1.08 m0 0.067 m0 0.55 m0 kg
Effective mass of holes (mp*) 0.56 m0 0.48 m0 0.37m0 kg
Bandgap Energy (Eg) 1.12 1.43 0.66 eV

Physical constants
q elementary charge 1.602 10−19 C
k Boltzmann’s constant 8.617 10−5 eV/K
ke Coulomb’s constant 8.99 109 N.m2/C2
kT (for T=300K) 0.026 eV
h Planck’s constant 6.625 10−34 J.s
ħ Modified Planck’s constant 1.054 10−34 J.s
c velocity of light 3 108 m/s
m0 Mass of electrons 9.1110−31 kg
0 Dielectric constant of vacuum 8.85 10−12 F/m
rSi Relative dielectric coefficient of Si 11.7

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