EE211 2022 Spring

Homework - Problem Set #6

Due: June 12th, 11:59 pm

Please scan your homework and upload it on the KLMS website.

Problem 1. (10 points)

A Si step junction maintained at room temperature under equilibrium conditions has a p-
side doping of NA=2 x 1015 /cm3 and n-side doping of ND=1015 /cm3 compute (a) Vbi , (b)
xp, xn, and W. (c) E at x=0, (d) V at x=0, (e) Make sketches that are roughly to scale of
the charge density, electric field and electrostatic potential as a function of position.

ANS)
Problem 2. (10 points)
Repeat Problem 1, taking NA=1017 /cm3 to be the p-side doping. Briefly compare the
results here with those of Problem 1.
ANS)
Problem 3. (10 points)
A pn junction diode has the doping profile sketched as follows. Mathematically, ND-NA =
N0[1-exp(-ax)], where N0 and a are constants. (a) Give a concise statement of the depletion
approximation. (b) Invoking the depletion approximation, make a sketch of the charge
density inside the diode. (c) Establish an expression for the electric field E(x), inside the
depletion region.

ANS)
Problem 4. (10 points)
A pn junction diode has the doping profile sketched as follows. Make the assumption that
xn > x0. (a) What is the built-in potential across the junction? (b) Invoking the depletion
approximation, sketch the charge density versus distance inside the diode. (c) Obtain an
analytical solution for the electric field, E(x), inside the depletion region.

ANS)

(a)

(b)

(c)
Problem 5. Modified Textbook Problem 7.12 (10 points)
An “isotype” step junction is one in which the same impurity type doping changes from
one concentration value to another value. An p-p isotype doping profile is shown as follows
(a) Sketch the thermal equilibrium energy-band diagram of the isotype junction. (b)
Determine the built-in potential barrier. (c) Make rough sketches of the potential, electric
field, and charge density inside the junction.

ANS)
a)

b)
For Nd =1016 cm-3,
𝑁𝑎 1016
𝐸𝐹𝑖 − 𝐸𝐹 = 𝑘𝑇𝑙𝑛 ( ) = (0.0259)𝑙𝑛 ( )
𝑛𝑖 1.5 × 1010
𝑜𝑟
𝐸𝐹𝑖 − 𝐸𝐹 = 0.3473 𝑒𝑉
For Nd =1015 cm-3,
1015
𝐸𝐹𝑖 − 𝐸𝐹 = (0.0259)𝑙𝑛 ( )
1.5 × 1010
𝑜𝑟
𝐸𝐹𝑖 − 𝐸𝐹 = 0.2877 𝑒𝑉
Then,
𝑉𝑏𝑖 = 0.34732 − 0.28768
𝑜𝑟
𝑉𝑏𝑖 = 0.0596 𝑉

c)
Charge density distribution:

-qNA

Electric field distribution:

(x)

Electrostatic potential:

Vbi
x
Problem 6. Textbook Problem 7.16 (10 points)
An abrupt silicon pn junction at T = 300 K has impurity doping concentrations of Na = 5
 1016 cm-3 and Nd = 1015 cm-3. Calculate (a) Vbi, (b) W at (i) VR = 0 and (ii) VR = 5 V,
and (c) |Emax| at (i) VR = 0 and (ii) VR = 5V.

ANS)
a)
(5 × 1016 )(1015 )
𝑉𝑏𝑖 = (0.0259)𝑙𝑛 [ ] = 0.6767V
(1.5 × 1010 )2
b)
2 ∈𝑠 (𝑉𝑏𝑖 + 𝑉𝑅 ) 𝑁𝑎 + 𝑁𝑑 1/2
W= { ( )}
𝑒 𝑁𝑎 𝑁𝑑
(i) For VR=0,
1/2
2(11.7)(8.85 × 10−14 )(0.6767) 5 × 1016 + 1015
W= { × [ ]}
1.6 × 10−19 (5 × 1016 )(1015 )
= 9.452 × 10−5 𝑐𝑚
𝑜𝑟
𝑊 = 0.9452 𝜇𝑚

(ii) For VR=5V,

1/2
2(11.7)(8.85 × 10−14 )(0.6767 + 5) 5 × 1016 + 1015
W= { ×[ ]}
1.6 × 10−19 (5 × 1016 )(1015 )
= 2.738 × 10−4 𝑐𝑚
𝑜𝑟
𝑊 = 2.738 𝜇𝑚

c)
2(𝑉𝑏𝑖 + 𝑉𝑅 )
|𝐸𝑚𝑎𝑥 | =
𝑊
(i) For VR=0,
2(0.6767)
|𝐸𝑚𝑎𝑥 | = −4
= 1.43 × 104 𝑉/𝑐𝑚
0.9452 × 10

(ii) For VR=5V,

2(0.6767 + 5)
|𝐸𝑚𝑎𝑥 | = = 4.15 × 104 𝑉/𝑐𝑚
2.738 × 10−4
Problem 7. Textbook Problem 7.21 (10 points)
Consider two p+n silicon junctions at T = 300 K reverse biased at VR = 5 V. The impurity
doping concentrations in junction A are Na = 1018 cm-3 and Nd = 1015 cm-3, and those in
junction B are Na = 1018 cm-3 and Nd = 1016 cm-3. Calculate the ratio of the following
parameters for junction A to junction B: (a) W, (b) |Emax| , and (c) C’j.

ANS)
(a)
2 ∈𝑠 (𝑉𝑏𝑖𝐴 + 𝑉𝑅 ) 𝑁𝑎 + 𝑁𝑑𝐴 1/2
𝑊(𝐴) { ( 𝑁 𝑁 )}
𝑒 𝑎 𝑑𝐴
=
𝑊(𝐵) 2 ∈𝑠 (𝑉𝑏𝑖𝐵 + 𝑉𝑅 ) 𝑁𝑎 + 𝑁𝑑𝐴 1/2
{ ( 𝑁 𝑁 )}
𝑒 𝑎 𝑑𝐵
𝑜𝑟
𝑊(𝐴) (𝑉𝑏𝑖𝐴 + 𝑉𝑅 ) (𝑁𝑎 + 𝑁𝑑𝐴 ) 𝑁𝑑𝐵 1/2
=[ ( )]
𝑊(𝐵) (𝑉𝑏𝑖𝐵 + 𝑉𝑅 ) (𝑁𝑎 + 𝑁𝑑𝐵 ) 𝑁𝑑𝐴
We find
(1018 )(1015 )
𝑉𝑏𝑖𝐴 = (0.0259)𝑙𝑛 [ ] = 0.7543V
(1.5 × 1010 )2
(1018 )(1016 )
𝑉𝑏𝑖𝐵 = (0.0259)𝑙𝑛 [ ] = 0.8139V
(1.5 × 1010 )2
We find
1/2
𝑊(𝐴) 5.7543 1018 + 1015 1016
= [( ) ( 18 ) × ( )]
𝑊(𝐵) 5.8139 10 + 1016 1015
𝑜𝑟
𝑊(𝐴)
= 3.13
𝑊(𝐵)

(b)
2(𝑉𝑏𝑖𝐴 + 𝑉𝑅 )
𝐸(𝐴) 𝑊(𝐴) 𝑊(𝐵) 𝑉𝑏𝑖𝐴 + 𝑉𝑅 1 5.7543
= = ∙ =( )( )
𝐸(𝐵) 2(𝑉𝑏𝑖𝐵 + 𝑉𝑅 ) 𝑊(𝐴) 𝑉𝑏𝑖𝐵 + 𝑉𝑅 3.13 5.8139
𝑊(𝐵)
𝑜𝑟
𝐸(𝐴)
= 0.316
𝐸(𝐵)

(c)
 1/2
∈𝑠 𝑁𝑎 𝑁𝑑𝐴
𝐶′𝑗 (𝐴) [ ] 𝑁𝑑𝐴 𝑉𝑏𝑖𝐵 + 𝑉𝑅 𝑁𝑎 + 𝑁𝑑𝐵 1/2
2(𝑉𝑏𝑖𝐴 + 𝑉𝑅 )(𝑁𝑎 + 𝑁𝑑𝐴 )
= 1/2
= [( )( )( )]
𝐶′𝑗 (𝐵) ∈𝑠 𝑁𝑎 𝑁𝑑𝐵 𝑁𝑑𝐵 𝑉𝑏𝑖𝐴 + 𝑉𝑅 𝑁𝑎 + 𝑁𝑑𝐴
[ ]
2(𝑉𝑏𝑖𝐵 + 𝑉𝑅 )(𝑁𝑎 + 𝑁𝑑𝐵 )
1/2
1015 5.8139 1018 + 1016
= [( 16 ) ( )( )]
10 5.7543 1018 + 1015

𝑜𝑟
𝐶′𝑗 (𝐴)
= 0.319
𝐶′𝑗 (𝐵)

Problem 8. Textbook Problem 7.29 (10 points)

Consider a silicon pn junction with the doping profile shown in Figure P7.29. T = 300 K.
(a) Calculate the applied reverse-biased voltage required so that the space charge region
extends entirely through the p region. (b) Determine the space charge width into the n +
region with the reverse-biased voltage calculated in part (a). (c) Calculate the peak electric
field for this applied voltage.

ANS)
An n+p junction with Na = 1014 cm-3,
(a)
A one-sided junction and assume VR >> Vbi.
Then,
2 ∈𝑠 𝑉𝑅 1/2
𝑥𝑝 ≅ [ ]
𝑒𝑁𝑎
𝑜𝑟
−4 2
2(11.7)(8.85 × 10−14 )𝑉𝑅
(50 × 10 ) =
(1.6 × 10−19 )(1014 )
which yields
 𝑉𝑅 = 193 𝑉

(b)
𝑥𝑝 𝑁𝑑 𝑁𝑎
= ⟹ 𝑥𝑛 = 𝑥𝑝 ( )
𝑥𝑛 𝑁𝑎 𝑁𝑑
so
−4 )
1014
𝑥𝑛 = (50 × 10 ( 16 ) = 0.50 × 10−4 𝑐𝑚 = 0.50𝜇𝑚
10
(c)
2𝑉𝑅 2(193.15)
|𝐸𝑚𝑎𝑥 | ≅ =
𝑊 50.5 × 10−4
𝑜𝑟
|𝐸𝑚𝑎𝑥 | = 7.65 × 104 𝑉/𝑐𝑚

Problem 9. Textbook Problem 7.38 (10 points)

(a) A symmetrically doped silicon pn junction diode has doping concentrations of Na = Nd
= 2  1016 cm-3. Assuming the critical electric field is Ecrit = 4  105 V/cm, determine the
breakdown voltage. (b) Repeat part (a) if the doping concentrations are Na = Nd = 5  1015
cm-3.

ANS)
(a)
From Equation (7.36),
1/2
2𝑒(𝑉𝑏𝑖 + 𝑉𝑅 ) 𝑁𝑎 𝑁𝑑
|𝐸𝑚𝑎𝑥 | = { ( )}
∈𝑠 𝑁𝑎 + 𝑁𝑑
Set |𝐸𝑚𝑎𝑥 | = Ecrit and VR = VB
(2 × 1016 )(2 × 1016 )
𝑉𝑏𝑖 = (0.0259)𝑙𝑛 [ ] = 0.7305 V
(1.5 × 1010 )2
Then
1

5
2(1.6 × 10−19 )(𝑉𝑏𝑖 + 𝑉𝑅 ) (5 × 1015 )(5 × 1015 ) 2
4 × 10 = { ×[ ]} ⇒ 𝑉𝑏𝑖 + 𝑉𝑅 = 207.1
(11.7)(8.85 × 10−14 ) 5 × 1015 + 5 × 1015
So 𝑉𝑅 ≅ 206 V
Problem 10. Modified from Textbook Problem 7.34 (10 points)
A silicon PIN junction has the doping profile shown in Figure P7.34. The “I” corresponds
to an ideal intrinsic region in which there is no impurity doping concentration. (a) Draw
charge, E-field and potential briefly. (b) Determine Vbi, 𝑥𝑝 , 𝑥𝑛 , 𝐸𝑚𝑎𝑥 .

ANS)
(a)
(b)
𝑘𝑇 𝑁𝑎 𝑁𝑑 (5 × 1015 )(5 × 1015 )
𝑉𝑏𝑖 = 𝑙𝑛 ( 2 ) = (0.0259)𝑙𝑛 [ ]
𝑞 𝑛𝑖 (1.5 × 1010 )2
𝑜𝑟
𝑉𝑏𝑖 = 0.66𝑉

𝑞𝑁𝑑 2 𝑞𝑁𝑑 𝑞𝑁𝑎 2

𝑉𝑏𝑖 = 𝑤𝑛 + 𝑤𝑛 𝑤𝑖𝑛𝑡 + 𝑤 = 0.66𝑉 … (1)
2𝜀𝑠 𝜀𝑠 2𝜀𝑠 𝑝

𝑤𝑛 𝑁𝑑 = 𝑤𝑝 𝑁𝑎 … (2)

Using (1) and (2),

𝑤𝑛 = 𝑤𝑝 = 4.2 × 10−6 cm = 0.042 μm

𝑞 1.6 × 10−19 𝐶
𝐸𝑚𝑎𝑥 = 𝑁𝑑 𝑤𝑛 = × (5 × 1015 )𝑐𝑚−3 × 4.2 × 10−6 𝑐𝑚
𝜀𝑠 11.7 × 8.854 × 10−14 𝐹/𝑐𝑚
= 3.24 × 103 𝑉/𝑐𝑚