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Problems For ch3 - To Students

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32 views1 page

Problems For ch3 - To Students

Uploaded by

waderen01
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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CH3 pn junction electrostatics

Q1) A silicon diode is fabricated by starting with an n-type (Nd=1016 cm-3) substrate, into which indium is diffused to
form as a p-type region doped at 1018 cm-3. Assuming that an abrupt p+- n junction is formed by the diffusion process,
(a) calculate the fermi level positions in the p- and n- regions, (b) determine the contact potential in the diode, (c)
calculate the depletion widths on the p- and n- side.
(Ans: Ec─Efn=0.206 eV, Efp─Ev=0.06 eV, ψo=0.838 V, xd=0.32 µm)

Q2) Consider a 20 µm diameter p-n diode fabricated in silicon. The donor density is 1016 cm-3 and the acceptor density
is 1018 cm-3. Calculate the following in this diode at 300 K: (a) the depletion widths and electric field profile under
reverse biases of 0, 5, and 10 V, and under a forward bias of 0.5 V, (b) what are the charges in the depletion region
for these biases? Ans: Vr=0 V, xp=32 Å, xn=0.32 µm, Ɛ= ─4.95x104 V/cm, Q=1.61x10-13 C
Vr=5 V, xp=84.5 Å, xn=0.845 µm, Ɛ= ─1.3x105 V/cm, Q=4.24x10-13 C

Vr=10 V, xp=115.1 Å, xn=1.151 µm, Ɛ= ─1.78x105 V/cm, Q=5.78x10-13 C

Vf=0.5 V, xp=20 Å, xn=0.20 µm, Ɛ= ─3.14x104 V/cm, Q=1x10-13 C

(We can see that at a reverse bias of ~10 V, the peak field is beginning to approach the breakdown field for Si, which is
around 3x105 V/cm)

Q3) For a silicon one-sided abrupt junction with Na=1019 cm-3 and Nd=1016 cm-3, calculate the depletion layer width
and the maximum field zero bias (T=300 K). (Ans: xd=0.343 µm, |Ɛm|= 5.2x104 V/cm)

Q4) For a silicon one-sided abrupt junction with Na=2x1019 cm-3 and Nd=8x1015 cm-3, calculate the junction
capacitance at zero bias and reverse bias of 4 V (T=300 K).
(Ans: Cj (0 V) = 2.728x10-8 F /cm2, Cj (-4 V) = 1.172x10-8 F /cm2)

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