Scribd
Upload
6 views

Assignment 11 Week 11

Assignment

Uploaded by

Kay r star
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
6 views

Assignment 11 Week 11

Assignment

Uploaded by

Kay r star
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Thin Film Technology

Assignment-11 Week 11

Number of questions:10 Total Mark: 10X1 = 10

Question 1:
Reactive ion etching is a/an __ etching process.
[Choose the correct option to fill in the blank.]
a. Isotropic.
b. Partially anisotropic.
c. Anisotropic
d. Controlled anisotropic.
Answer: d. Reactive ion etching is a controlled anisotropic etching process.
Explanation: Please go through lecture 51 for a better understanding.

Question 2:
In photolithography, the minimum feature size is determined by
a. Thickness of the resist.
b. Wavelength of the light used.
c. Density of the resist.
d. All of these.
Answer: b. Wavelength of the light used.
Explanation: In photolithography, the minimum feature size is determined by the
wavelength of the light used. The Rayleigh criterion equation determines the critical
dimension or the smallest feature size:
𝜆
𝐶𝑟𝑖𝑡𝑖𝑐𝑎𝑙 𝑑𝑖𝑚𝑒𝑛𝑠𝑖𝑜𝑛 ∝
𝑁𝐴
Please go through lecture 51 for a better understanding.

Question 3:
The surface potential (ΦS) at the threshold voltage in a Metal-Oxide-Semiconductor (MOS)
capacitor is related to Fermi potential as
a. ΦF.
b. (ΦF)2.
c. 1/ ΦF.
d. 2ΦF.
Answer: d. 2ΦF.
Explanation: In an MOS capacitor threshold voltage is defined as the voltage at which the
surface potential is ΦS =2ΦF.
Please go through lecture 52 for a better understanding.

Question 4:
Calculate the maximum depletion width of a MOS capacitor on a p-type semiconductor with
relative dielectric constant 10, using the following equation:
1
4Φ 𝜖 2
𝑊𝑚 = ( F 𝑆) .
𝑞𝑁𝑎

Given: ΦF = 0.36 eV, q = 1.6*10-19C, Na = 1018 cm-3.


a. 1.2 nm.
b. 2.8 cm.
c. 28 nm.
d. None of these.
Answer: c. 28 nm.
Explanation: Putting the values: ΦF = 0.36 eV, q = 1.6*10-19C, Na = 1018 cm-3, εS = 10 in
the equation mentioned in the question we get the maximum depletion width,
Wm = 2.8×10-6 cm or, 28 nm.
Please go through lecture 52 for a better understanding.
Question 5:
A n-MOSFET is fabricated with a gate width = 10 µm and gate length = 2 µm and oxide
capacitance = 10-7 F/cm2. In the linear region at VG = 1.5 V, VT= 0.5V, calculate the drain
conductance (gD). Given: μn = 800 cm2/V.s.
a. 0.0004 S.
b. 0.4 S.
c. 4 S.
d. 40 S.
Answer: a. 0.0004 S.
𝑍
Explanation: Drain conductance is given by, 𝑔𝐷 = ( ) 𝜇𝑛 𝐶𝑜𝑥 (𝑉𝐺 − 𝑉𝑇 ).
𝐿
Putting Z=10 μm, L=2 μm, μn= 800 cm2/V. s, Cox=10-7 F/cm2, VG = 1.5 V, VT = 0.5 V, we
got gD= 0.0004 S.

Please go through lecture 53 for a better understanding.

Question 6:
When a high positive voltage is applied at the input (i.e. Vin= + ve voltage) of a CMOS inverter
then Vout is low because
a. pMOS OFF and nMOS ON.
b. pMOS ON and nMOS OFF.
c. pMOS ON and nMOS ON.
d. pMOS OFF and nMOS OFF.
Answer: a. pMOS OFF and nMOS ON.
Explanation: In a CMOS inverter when Vin= high +ve, then VGS = 0 for p-channel but
VGS= +ve for n-channel. So, pMOS is OFF and nMOS is ON, resulting in Vout= low.
Please go through lecture 53 for a better understanding.
Question 7:
Physical oxide thickness of a high-k gate dielectric is different from the equivalent oxide thickness
of SiO2 (𝑡𝑜𝑥 ). Calculate the physical thickness of Al2O3 (k = 10). Given: kSiO2 = 3.9, tox = 1.85
nm.
a. 58 Å.
b. 4.74 nm.
c. 1.85 nm.
d. 4.74 Å.
Answer: b. 4.74 nm.
𝑘𝑛𝑒𝑤
Explanation: Physical oxide thickness is given by : 𝑡𝑝ℎ𝑦𝑠 = ( ) 𝑡𝑜𝑥
𝑘𝑆𝑖𝑂2

Putting the value of kSiO2= 3.9, tox=1.85 nm and knew=10 in the equation:
We got tphys= 4.74 nm.
Please go through lecture 54 for a better understanding.

Question 8:
Some of the advantages of SOI (Silicon-on-Insulator) based CMOS technology are:
a. Higher speed.
b. Less dopant fluctuation effect.
c. Absence of a latch-up effect.
d. All of these.
Answer: d. All of these.
Explanation:
Advantages of SOI (Silicon-on-Insulator) technology are :
• Absence of latch-up effect.
• Higher speed / lower power (lower S/D capacitance).
• Less dopant fluctuation effect.
• Radiation hardened against ionization radiation.
Please go through lecture 54 for a better understanding.

Question 9:
Mobility due to lattice (phonon) scattering in a semiconductor varies with temperature as:
a. T.
b. T-3/2.
c. T3/2.
d. T3.
Answer: b. T-3/2.
Explanation: Please go through lecture 55 for a better understanding.

Question 10:
Gain in a HBT (Heterojunction Bipolar Transistor) is proportional to :
exp(Δ𝐸𝑔 )
a. .
𝐾𝑇
Δ𝐸𝑔
b. .
𝐾𝑇
1
c. .
𝑇
d. None of these.
[where ΔEg is the difference between the emitter and base bandgap, K is the Boltzmann
constant and T is the temperature.]
exp(Δ𝐸𝑔 )
Answer: a. .
𝐾𝑇

Explanation: Please go through lecture 55 for a better understanding.

You might also like