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Assignment 12 - NPTEL

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21 views4 pages

Assignment 12 - NPTEL

assignment

Uploaded by

Kay r star
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Thin Film Technology

Assignment-12 Week 12

Number of questions:10 Total Mark: 10×1 = 10

Question 1:
The energy band gap of semiconducting material to produce violet (wavelength = 4000 Å) LED is
----------------- eV.
[Choose the correct option to fill in the blank.]
a. 4.2 eV
b. 3.1 eV
c. 2.91 eV
d. 3.21 eV
Answer : b. 3.1 eV
Explanation: Energy corresponding to the wavelength of 4000 Å (0.4 µm)
Eg (eV) = 1.24 / (µm) = 1.24 / 0.4 µm
= 3.1 eV
Please go through lecture 56 for a better understanding.

Question 2:
The reverse saturation current in a Si diode with an ideality factor 2.0 is 1.0 µA at 300 K. Find the
current through the diode for a forward bias of 0.59 V.
a. 79.4 mA
b. 89.4 µA
c. 89.4 mA
d. 79.4 µA
Answer : c. 89.4 mA
𝑒𝑣 1.6×10−19 ×0.59×1023
Explanation: We know that, 𝐼 = 𝐼0 (𝑒 ƞ𝑘𝑇 − 1) = 1 × 10−6 × (𝑒 2×1.38×300 − 1)

= 89.4 mA
Please go through lecture 56 for a better understanding.
Question 3:
Fresnel’s loss of the EQE of a LED with GaAs-air (refractive index of GaAs and air is 3.66 and
1.0, respectively) interface is:
a. 3.069
b. 0.33
c. 0.57
d. 3.66
Answer : b. 0.33
Explanation: Fresnel’s loss in a LED due to reflection at GaAs-air interface is : [(nGaAs - nair)/
(nGaAs + nair)]2 =(2.66/4.66)2 = 0.33
Please go through lecture 57 for a better understanding.

Question 4:
To avoid excessive Fresnel’s loss in a GaAs LED, the device is encapsulated by a dielectric
dome with a refractive index of 1.6. Find out the Fresnel’s loss in the encapsulated device and
calculate the critical angle at a GaAs–air interface, if the refractive index of GaAs is 3.66.
a. 0.17 & 14.9°
b. 0.19 & 15.9°
c. 0.15 & 15.9°
d. 2.06 & 17.9°
Answer : c. 0.15 & 14.9°
Explanation: Fresnel’s loss (R) = [(3.66 – 1.6) / (3.66 + 1.6)]2 = 0.153
For GaAs/air : θc = sin-1 (1.0 / 3.66) = 15.9°
Please go through lecture 57 for a better understanding.
Question 5:
A P-N junction photodetector operates under :
a. Forward bias
b. Reverse bias
c. Under both forward and reverse bias
d. Under zero bias

Answer : b. Photogenerated electron-hole pairs result in photocurrent under the reverse bias in a
P-N junction detector

Please go through lecture 58 for a better understanding.


Question 6:
Which one of the following semiconductor materials is useful for fabricating mid-infrared
wavelength photodetectors?
a. Si
b. HgCdTe
c. GaAs
d. Ge
Answer : b. HgCdTe
Please go through lecture 58 for a better understanding.

Question 7:
The device that converts optical radiation into electrical energy is :
a. Photo-detector
b. LED
c. Forward biased diode
d. Solar cell
Answer : d. Solar cell
Please go through lecture 59 for a better understanding.

Question 8:
Which of the following is correctly ordered according to the ascending order of band gap energy
for use in multijunction solar cells?
a. Ge < GaAs < GaInP2
b. GaAs < Ge < GaInP2
c. GaAs < GaInP2 < Ge
d. GaInP2 < GaAs < Ge
Answer : a. Ge < GaAs < GaInP2
Explanation: Eg (Ge: 0.7 eV) < Eg (GaAs: 1.43 eV) < Eg (GaInP2: 1.8-1.9 eV)
Please go through lecture 59 for a better understanding.
Question 9:
Which of the following is correct for the density of states of quantum well structure?
a. The density of states of a quantum well is directly proportional to the energy.
b. The density of states of a quantum well is proportional to the square root of energy.
c. The density of states of a quantum well is independent of energy.
d. The density of states of a quantum well is inversely proportional to the square root of
energy.
Answer : c. The density of states of quantum well is independent of energy.
Please go through lecture 60 for a better understanding.

Question 10:
Consider a lattice-matched In0.53Ga0.47As (Eg=0.75 eV) quantum well of width 5 nm flanked by
InP (Eg = 1.35 eV) barriers at two ends. Calculate the energy of optical transition for the grown
quantum well, using an infinite potential well approximation. Given the effective mass of electrons
and heavy holes, respectively are me= 0.01m0 and mhh=0.41m0
a. 1.513 eV
b. 1.153 eV
c. 1.613 eV
d. 1.713 eV
Answer : b. 1.153 eV
Explanation: For infinite well : En = (n2h2 / 8mL2 )
For InGaAs, me= 0.01m0 and mhh=0.41m0
Ee (n=1) = (h2 /8meL2) = 0.367 eV
Ehh (n=1) = 0.036 eV
So, Eg (mod) = 0.75+0.367+0.036 = 1.153 eV.
Please go through lecture 60 for a better understanding.

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