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20 views16 pages

SharedLecture Updated12aug

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juniorteamlead.fresources
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© © All Rights Reserved
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EC 201

Analog Electronics I
Conduction Mechanisms

Drift
Due to potential gradient
Diffusion
Due to concentration Gradient
Diffusion
In both the diagrams there exists concentration gradient

 Charge particles move from a region of high


concentration to a region of low concentration.

 Charged particles movement implies current flow


 Diffusion current is proportional to the gradient of
charge (dn/dx) along the direction of current flow.
 Jn Jp Jtot represent electron hole and total
current density.
dn dp
I  AqDn J p  qD p
dx dx
dn
J n  qDn dn dp
dx J tot  q ( Dn  Dp )
dx dx
Why there is negative sign in Jp? Why there is positive sign in Jn?
Einstein's Relation
Drift Current J n  n E  n  q
dn
Diffusion Current J n  qDn
dx
Drift Current J p  pE nq
dn
Diffusion Current J p   qD p
dx

D kT Dp Dn kT
Einstein's Relation      VT
 q p n q
VT  kT / q  (T / 11,600)V
Linear vs. Nonlinear Charge Density Profile

dn N dn  qDn N x
J n  qDn  qDn  J n  qD  exp
dx L dx Ld Ld

• Linear charge density profile means constant diffusion


current, whereas nonlinear charge density profile means
varying diffusion current.
Figs Microelectronics Razavi 5
Total Current
• In a semiconductor, potential and carrier concentration gradient may
exist simultaneously
• So, total current is sum of drift and diffusion current

dp
J p  q p pE  D p A / m2
dx
dn
J n  q n nE  Dn A / m2
dx

6
Graded Semiconductor
• Semiconductor may have non uniform doping.
• For example if hole concentration is varying electron
concentration will also vary as a consequence of mass action law.
• At thermal equilibrium and no external excitation, total electron and
hole current must be zero
Graded Semiconductor (Contd.)
• Semiconductor may have non uniform doping.
• For example if hole concentration is varying electron concentarion will also vary as a
consequence of mass action law.
• At thermal equilibrium and no external excitation, total electron and hole current must be zero
• For Total current to vanish HOLE DRIFT CURRENT MUST EXIST AND SHOULD BE EQUAL TO
HOLE DIFFUSION CURRENT  ELECTRIC FILED MUST EXIST
• IMPORTANT AS A RESULT OF NONUNIFORM DOPING AN ELECTRIC FIELD IS GENERATED
WITHIN THE SEMICONDUCTOR
dp
J  q pE  D 0
p p p dx
dp
q pE  D
p p dx
D V dp
p dp
E  T
p dx p dx
p
Graded Semiconductor (Contd.)

dV
As E  
dx
V12 dV   x1 Edx
V x2

VT Dp dp V dp
V
V12 dV   xx12 dx (E   T )
p p p dx p dx
p1
V2  V1  VT ln
p2
p1  p2 exp(V21 / VT )
Similarly
n1  n2 exp(V21 / VT )
Above two equation may be combined as
p1n1  p2 n2

Thus product of electron and hole concentration is


constant and is independent of x.
Problem
A conducting line on an IC chip is 2.8 mm long and has a rectangular cross
section 1umx4um. A current of 5mA produces a voltage drop of 100mV
across 2the line. Determine the electron concentration, given that μn =
𝑐𝑚
500 .
𝑉−𝑠
Problem
A conducting line on an IC chip is 2.8 mm long and has a rectangular cross
section 1umx4um. A current of 5mA produces a voltage drop of 100mV
across 2the line. Determine the electron concentration, given that μn =
𝑐𝑚
500 .
𝑉−𝑠

𝜎 = 𝐼𝐿/(𝑉𝐴)

𝑛 = 𝜎/(𝑞μ)
Problem
A conducting line on an IC chip is 2.8 mm long and has a rectangular cross
section 1umx4um. A current of 5mA produces a voltage drop of 100mV
across 2the line. Determine the electron concentration, given that μn =
𝑐𝑚
500 .
𝑉−𝑠

𝐼𝐿 𝜎
𝜎= 𝑛=
𝑉𝐴 𝑞μ
5∗103 ∗2.8∗10−3
=
0.1∗10−6 ∗4∗10−6
=3.5*107 (Ω𝑚)−1 =4.38*1021 (𝑐𝑚)−3
Find the resistivity of intrinsic silicon using following values:
μn = 1350cm2/Vs, μp = 480cm2/Vs, ni = 1.5E10/cm3.

 i  q(  n   p )ni
19
 1.6 *10 (480  1350)1.5 *10 10

 4392 *10 9 (1 /(  cm))


i  1 /  i
 2.276 *10   cm5
• Find the factor by which conductivity of pure Ge will change when temp
rises from 300K to 600K.

• Conductivity dependence on temp??


Conductivity dependence on temp

  q(    )n
i n p i

n  AT e
2

i 0
3  EG 0 / KT

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