UNIT III

OPTICAL SOURCES
3.1 Optical Sources

ud
Optical transmitter coverts electrical input signal into corresponding optical signal.
The
optical signal is then launched into the fiber. Optical source is the major component in an
optical transmitter .Popularly used optical transmitters are Light Emitting Diode (LED) and
semiconductor

lo
Laser Diodes (LD)
Characteristics of Light Source of Communication
To be useful in an optical link, a light source needs the following characteristics
It must be possible to operate the device continuously at a variety of temperatures for
C
many years.
• It must be possible to modulate the light output over a wide range of modulating
frequencies. For fiber links, the wavelength of the output should coincide with one of
tu
transmission windows for the fiber type used.
• To couple large amount of power into an optical fiber, the emitting area should be
small.
• To reduce material dispersion in an optical fiber link, the output spectrum should be
V

narrow.
• The power requirement for its operation must be low.
• The light source must be compatible with the modern solid state devices.
 • The optical output power must be directly modulated by varying the input current to
the device.
• Better linearity of prevent harmonics and intermodulation distortion.

ud
• High coupling efficiency.
• High optical output power.
• High reliability.
• Low weight and low cost.

lo
Two types of light sources used in fiber optics are light emitting diodes (LEDs) and laser
diodes (LDs).

Light Emitting Diodes(LEDs)

C
p-n Junction
Conventional p-n junction is called as homojunction as same semiconductor material
is sued on both sides junction. The electron-hole recombination occurs in relatively layer = 10
tu
μm. As the carriers are not confined to the immediate vicinity of junction, hence high current
densities can not be realized.
The carrier confinement problem can be resolved by sandwiching a thin layer ( = 0.1
μm) between p-type and n-type layers. The middle layer may or may not be doped. The
V

carrier confinement occurs due to bandgap discontinuity of the junction. Such a junction is
called heterojunction and the device is called double heterostructure.
In any optical communication system when the requirements is 1. Bit rate f 100-2—Mb/sec.
2. Optical power in tens of micro watts, LEDs are best suitable optical source.

LED Structures

ud
Heterojuncitons:
• A heterojunction is an interface between two adjoining single crystal semiconductors
with different bandgap.
• Heterojuctions are of two types, Isotype (n-n or p-p) or Antisotype (p-n).
Double Heterojunctions (DH):

lo
In order to achieve efficient confinement of emitted radiation double heterojunctions are
used in LED structure. A heterojunciton is a junction formed by dissimilar
semiconductors.Double heterojunction (DH) is formed by two different semiconductors on
each side of active region. Fig. 3.1.1 shows double heterojunction (DH) light emitter.
C
tu
V
 The crosshatched regions represent the energy levels of free charge. Recombination
occurs only in active In GaAsP layer. The two materials have different band gap energies and
different refractive indices. The changes in band gap energies create potential barrier for

ud
both holes and electrons. The free charges can recombine only in narrow, well defined active
layer side.
A double heterojunction (DH) structure will confine both hole and electrons to a
narrow active layer. Under forward bias, there will be a large number of carriers injected into
active region where they are efficiently confined. Carrier recombination occurs in small

lo
active region so leading to an efficient device. Another advantage DH structure is that the
active region has a higher refractive index than the materials on either side, hence light
emission occurs in an optical waveguide, which serves to narrow the output beam.
C
LED configurations
At present there are two main types of LED used in optical fiber links
Surface emitting LED
tu
Edge emitting LED.
Both devices used a DH structure to constrain the carriers and the light to an active layer.
Surface Emitting LEDs

In surface emitting LEDs the plane of active light emitting region is oriented perpendicularly
V

to the axis of the fiber. A DH diode is grown on an N-type substrate at the top of the diode as
shown in Fig. 3.1.2. A circular well is etched through the substrate of the device. A fiber is
then connected to accept the emitted
 ud
lo
C
At the back of device is a gold heat sink. The current flows through the p-type material
and forms the small circular active region resulting in the intense beam of light.
tu

Diameter of circular active area = 50 μm

Thickness of circular active area = 2.5 μm
Current density = 2000 A/cm2 half-power
Emission pattern = Isotropic, 120o beamwidth.
V
The isotropic emission pattern from surface emitting LED is of Lambartian pattern. In
Lambartian pattern, the emitting surface is uniformly bright, but its projected area diminishes
as cos θ, where θ is the angle between the viewing direction and the normal to the surface as

ud
shown in Fig. 3.1.3. The beam intensity is maximum along the normal.

lo
C
tu

The power is reduced to 50% of its peak when θ = 60o, therefore the total half-power
beamwidth is 120o. The radiation pattern decides the coupling efficiency of LED.
V
Edge Emitting LEDS (ELEDs)
In order to reduce the losses caused by absorption in the active layer and to make the beam
more directional, the light is collected from the edge of the LED. Such a device is known as

ud
edge emitting LED or ELED.
It consists of an active junction region which is the source of incoherent light and two guiding
layers. The refractive index of guiding layers is lower than active region but higher than outer
surrounding material. Thus a waveguide channel is form and optical radiation is directed into
the fiber. Fig. 3.1.4 shows structure of LED

lo
C
tu

Edge emitter’s emission pattern is more concentrated (directional) providing improved

coupling efficiency. The beam is Lambartian in the plane parallel to the junction but diverges
more slowly in the plane perpendicular to the junction. In this plane, the beam divergence is
V

limited. In the parallel plane, there is no beam confinement and the radiation is Lambartian.
To maximize the useful output power, a reflector may be placed at the end of the diode
opposite the emitting edge. Fig. 3.1.5 shows radiation from ELED.
 ud
Features of ELED:
•
• lo
Linear relationship between optical output and current.
C
Spectral width is 25 to 400 nm for λ = 0.8 – 0.9 μm.
• Modulation bandwidth is much large.
• Not affected by catastrophic gradation mechanisms hence are more reliable.
tu
• ELEDs have better coupling efficiency than surface emitter.
• ELEDs are temperature sensitive.

Usage :
1. LEDs are suited for short range narrow and medium bandwidth links.
V

2. Suitable for digital systems up to 140 Mb/sec.

3. Long distance analog links
Light Source Materials
The spontaneous emission due to carrier recombination is called electro luminescence. To
encourage electroluminescence it is necessary to select as appropriate semiconductor

ud
material. The semiconductors depending on energy bandgap can be categorized into
Direct bandgap semiconductors.
Indirect bandgap semiconductors.
Some commonly used bandgap semiconductors are shown in following table 3.1.1
Semiconductor Energy bandgap (eV) Recombination Br (cm3 /

lo
sec)
GaAs Direct : 1.43 7.21 x 10-10
GaAs Direct : 0.73 2.39 x 10-10
InAs Direct : 0.35 8.5 x 10-11
C
InSb Direct : 0.18 4.58 x 10-11
Si Indirect : 1.12 1.79 x 10-15
Ge Indirect : 0.67 5.25 x 10-14
tu
GaP Indirect : 2.26 5.37 x 10-14
Table 3.1.1 Semiconductor material for optical sources
Direct bandgap semiconductors are most useful for this purpose. In direct bandgap
semiconductors the electrons and holes on either side of bandgap have same value of
V

crystal momentum. Hence direct recombination is possible. The recombination occurs within
10-8 to 10-10 sec.
In indirect bandgap semiconductors, the maximum and minimum energies occur at different
values of crystal momentum. The recombination in these semiconductors is quite slow i.e. 10-
2 and 10-3 sec.

ud
The active layer semiconductor material must have a direct bandgap. In direct bandgap
semiconductor, electrons and holes can recombine directly without need of third particle to
conserve momentum. In these materials the optical radiation is sufficiently high. These
materials are compounds of group III elements (Al, Ga, In) and group V element (P, As, Sb).
Some tertiary allos Ga1-x Alx As are also used.

lo
Emission spectrum of Ga1-x AlxAs LED is shown in Fig. 3.1.6.
C
tu
V

The peak output power is obtained at 810 nm. The width of emission spectrum at half
power (0.5) is referred as full width half maximum (FWHM) spectral width. For the
given LED FWHM is 36 nm.
The fundamental quantum mechanical relationship between gap energy E and
frequency

ud
v is given as

where, energy (E) is in joules and wavelength (λ) is in meters. Expressing the gap energy (Eg)

lo
in electron volts and wavelength (λ) in micrometers for this application.
C
Different materials and alloys have different band gap energies
The bandgap energy (Eg) can be controlled by two compositional parameters x and y,
tu
within direct bandgap region. The quartenary alloy In1-x Gax Asy P1-y is the principal material
sued in such LEDs. Two expression relating Eg and x,y are –
V
Example 3.1.1 : Compute the emitted wavelength from an optical source having x = 0.07.
Solution : x = 0.07

ud
Eg = 1.513 eV
now

lo
C
Example 3.1.2 : For an alloy In0.74 Ga0.26 As0.57 P0.43 to be sued in Led. Find the
wavelength emitted by this source.
tu

Solution : Comparing the alloy with the quartenary alloy composition. In1-x Gax As P1-y it is
found that
x = 0.26 and y= 0.57
V

Eg = 1.35 – 0.72 y + 0.12 y2

Using
Eg = 1.35-(0.72 x 0.57) + 0.12 x 0.572
 Eg = 0.978 eV
now

ud
Quantum Efficiency and Power

lo
The internal quantum efficiency (ηint) is defined as the ratio of radiative recombination rate
to the total recombination rate.
C
Where,
Rr is radiative recombination rate.
Rnr is non-radiative recombination rate.
tu

If n are the excess carriers, then radiative life time, and non-radiative life time,

The internal quantum efficiency is given The recombination time of carriers in active region is
V

τ. It is also known as bulk recombination life time.

 ud
Therefore internal quantum efficiency is given as –

lo
If the current injected into the LED is I and q is electron charge then total number of re
combinations per second is –
C
tu

Optical power generated internally in LED is given as –

V
 Not all internally generated photons will available from output of device. The external

ud
quantum efficiency is used to calculate the emitted power. The external quantum efficiency is
defined as the ratio of photons emitted from LED to the number of photons generated
internally. It is given by equation

lo
The optical output power emitted from LED is given as –
C
tu
Example 3.1.3 : The radiative and non radiative recombination life times of minority
carriers in the active region of a double heterojunction LED are 60 nsec and 90 nsec
respectively. Determine the total carrier recombination life time and optical power generated
internally if the peak emission wavelength si 870 nm and the drive currect is 40 mA.
V

Solutions:
Given : λ = 870 nm 0.87 x 10-6 m
τr = 60 nsec.
τnr = 90 nsec.
I = 40 mA = 0.04 Amp.

ud
i) Total carrier recombination life time:

ii)

lo
Internal optical power
C
iii)

iv)
tu

Example 3.1.4 : A double heterjunciton InGaAsP LED operating at 1310 nm has radiative
and non-radiative recombination times of 30 and 100 ns respectively. The current injected is
40 Ma.
V

Calculate – Bulk recombination life time. Internal quantum efficiency Internal power level.

Solution : λ = 1310 nm = (1.31 x 10-6 m)

τr = 30 ns
τnr = 100 ns
i) I = 40 MA – 0.04 Amp.

ud
Bulk Recombination Life time (τ) :

lo
Internal quantum efficienty (ηint)
C
Internal power level (Pint) :
tu

Advantages and Disadvantages of LED

Advantages of LED
ii) Simple design.
V

iii) Ease of manufacture.

iv) Simple system integration.
v) Low cost.
 vi) High reliability.

Disadvantages of LED

ud
1. Refraction of light at semiconductor/air interface.
2. The average life time of a radiative recombination is only a few nanoseconds, therefore
3. Modulation BW is limited to only few hundred megahertz.
4. Low coupling efficiency.
5. Large chromatic dispersion.

lo
Comparison of Surface and Edge Emitting LED
LED type Max. modulation freq. (MHz) Output power (mW) Fiber coupled power
Surface emitting 60 <4 < 0.2
Edge emitting 200 <7 < 1.0
C
Injection Laser Diode (ILD)
tu
The laser is a device which amplifies the light, hence the LASER is an acronym for light
amplification by stimulated emission of radiation.
The operation of the device may be described by the formation of an electromagnetic
standing wave within a cavity (optical resonator) which provides an output of monochromatic
highly coherent radiation.
V
Principle :
Material absorb light than emitting. Three different fundamental process occurs between the
two energy states of an atom. Absorption 2) Spontaneous emission 3) Stimulated

ud
emission.Laser action is the result of three process absorption of energy packets (photons)
spontaneous emission, and stimulated emission. (These processes are represented by the
simple two-energy-level diagrams). Where E1 is the lower state energy level. E2 is the higher
state energy level.
Quantum theory states that any atom exists only in certain discrete energy state, absorption

lo
or emission of light causes them to make a transition from one state to another. The
frequency of the absorbed or emitted radiation f is related to the difference in energy E
between the two states. If E1 is lower state energy level. and E2 is higher state energy level
E = (E2 – E1) = h.f. Where, h = 6.626 x 10-34 J/s (Plank’s constant).
C
An atom is initially in the lower energy state, when the photon with energy (E2 – E1) is
incident on the atom it will be excited into the higher energy state E2 through the absorption
of the photon
tu
V
When the atom is initially in the higher energy state E2, it can make a transition to the lower
energy state E1 providing the emission of a photon at a frequency corresponding to E = h.f.
The emission process can occur in two ways. By spontaneous emission in which the atom

ud
returns to the lower energy state in random manner.
By stimulated emission when a photon having equal energy to the difference between the
two states (E2 – E1) interacts with the atom causing it to the lower state with the creation of
the second photon

lo
C
tu
Spontaneous emission gives incoherent radiation while stimulated emission gives coherent
radiation. Hence the light associated with emitted photon is of same frequency of incident
photon, and in same phase with same polarization.
It means that when an atom is stimulated to emit light energy by an incident wave, the
liberated energy can add to the wave in constructive manner. The emitted light is bounced
V

back and forth internally between two reflecting surface. The bouncing back and forth of light
wave cause their intensity to reinforce and build-up. The result in a high brilliance, single
frequency light beam providing amplification.
Emission and Absorption Rates

ud
It N1 and N2 are the atomic densities in the ground and excited states.
Rate of spontaneous emission
Rspon = AN2
Rate of stimulated emission
Rstim = BN2 ρem

lo
Rate of absorption
Rabs = B’ N1 ρem
where,
A, B and B’ are constants.
C
ρem is spectral density.
Under equilibrium condition the atomic densities N1 and N2 are given by Boltzmann
statistics.
tu

where,
KB is Boltzmann constant.
V

T is absolute temperature.
Under equilibrium the upward and downward transition rates are equal.
AN2 + BN2 ρem = B’ N1 ρem
Spectral density ρem
Comparing spectral density of black body radiation given by Plank’s formula,
Therefore, … A and B are called Einstein’s coefficient.

ud
Fabry – Perot Resonator
Lasers are oscillators operating at frequency. The oscillator is formed by a resonant
cavity providing a selective feedback. The cavity is normally a Fabry-Perot resonator i.e. two
parallel plane mirrors separated by distance L,

lo
C
tu

Light propagating along the axis of the interferometer is reflected by the mirrors back
to the amplifying medium providing optical gain. The dimensions of cavity are 25-500 μm
longitudinal 5-15 μm lateral and 0.1-0.2 μm transverse. Fig. 3.1.10 shows Fabry-Perot
V

resonator cavity for a laser diode.

The two heterojunctions provide carrier and optical confinement in a direction normal to the
junction. The current at which lasing starts is the threshold current. Above this current the
output power increases sharply.

ud
Distributed Feedback (DFB) Laser
In DFB laster the lasing action is obtained by periodic variations of refractive index along the
longitudinal dimension of the diode. Fig. 3.1.11 shows the structure of DFB laser diode

lo
Lasing conditions and resonant Frequencies
C
The electromagnetic wave propagating in longitudinal direction is expressed as –
E(z, t) = I(z) ej(ω t-β z)
where,
tu
I(z) is optical field intensity.
is optical radian frequency.
β is propagation constant.
The fundamental expression for lasing in Fabry-Perot cavity is –
V

where, is optical field confinement factor or the fraction of optical power in the active layer.
α is effective absorption coefficient of material.
g is gain coefficient.
h v is photon energy.
z is distance traverses along the lasing cavity.

ud
The condition of lasing threshold is given as –
For amplitude : I (2L) = I (0)
For phase : e-j2β L = 1
Optical gain at threshold = Total loss in the cavity.
i.e. Γ gth = αt

lo
Now the lasing expression is reduced to –
C
where,
Αend is mirror loss in lasing cavity. An important condition for lasing to occur is that gain, g ≥
g th i.e. threshold gain.
tu

Example 3.1.5 : Find the optical gain at threshold of a laser diode having following
parametricvalues – R1 = R2 = 0.32, α = 10cm-1 and L = 500 μm.
V

Solution : Optical gain in laser diode is given by –

Power Current Characteristics

ud
The output optic power versus forward input current characteristics is plotted in Fig. 3.1.12
for a typical laser diode. Below the threshold current (Ith) only spontaneous emission is
emitted hence there is small increase in optic power with drive current. At threshold when
lasing conditions are satisfied. The optical power increases sharply after the lasing threshold
because of stimulated emission.The lasing threshold optical gain (gth) is related by threshold

lo
current density (Jth) for stimulated emission by expression –
g th = β
where, β is constant for device structure
C
tu
V

Fig. 3.1.12 Power current characteristics

External Quantum Efficiency
The external quantum efficiency is defined as the number of photons emitted per electron
hole pair recombination above threshold point. The external quantum efficiency ηext is given

ud
by –

where,
ηi = Internal quantum efficiency (0.6-0.7).
gth = Threshold gain.

lo
α = Absorption coefficient
Typical value of ηext for standard semiconductor laser is ranging between 15-20 %.

Resonant Frequencies
At threshold lasing
C
2β L = 2π m
where, (propagation constant)
m is an integer.
tu

Since c = vλ
V

Substituting λ in 3.1.30
Gain in any laser is a function of frequency. For a Gaussian output the gain and frequency are
related by expression –

ud
where, g(0) is maximum gain. λ0 is center wavelength in spectrum.is spectral width of the
gain.The frequency spacing between the two successive modes is –

lo
Optical Characteristics of LED and Laser
The output of laser diode depends on the drive current passing through it. At low drive
current, the laser operates as an inefficient Led, When drive current crosses threshold value,
C
lasing action beings. Fig. 3.1.13 illustrates graph comparing optical powers of LED operation
(due to spontaneous emission) and laser operation (due to stimulated emission).
tu
V
Spectral and Spatial Distribution of Led and Laser

At low current laser diode acts like normal LED above threshold current, stimulated emission

ud
i.e. narrowing of light ray to a few spectral lines instead of broad spectral distribution, exist.
This enables the laser to easily couple to single mode fiber and reduces the amount of
uncoupled light (i.e. spatial radiation distribution). Fig. 3.1.14 shows spectral and spatial
distribution difference between two diodes

lo
C
tu

Advantages and Disadvantages of Laser Diode

Advantages of Laser Diode
• Simple economic design.
V

• High optical power.

• Production of light can be precisely controlled.
• Can be used at high temperatures.
 • Better modulation capability.
• High coupling efficiency.
• Low spectral width (3.5 nm)

ud
• Ability to transmit optical output powers between 5 and 10 mW.
• Ability to maintain the intrinsic layer characteristics over long periods.
Disadvantages of Laser Diode
• At the end of fiber, a speckle pattern appears as two coherent light beams add or
subtract their electric field depending upon their relative phases.

lo
• Laser diode is extremely sensitive to overload currents and at high transmission rates,
when laser is required to operate continuously the use of large drive current produces
unfavourable thermal characteristics and necessitates the use of cooling and power
stabilization.
C
Comparison of LED and Laser Diode
S. No. Parameter LED LD (Laser Diode)
tu
1 Principle of operation Spontaneous emission. Stimulated emission.
2 Output beam Non – coherent Coherent.
3 Spectral width Board spectrum (20 nm – 100 nm) Much narrower (1-5
nm).
4 Data rate Low. Very high.
V

5 Transmission distance Smaller. Greater.

6 Temperature sensitivity Less sensitive. More temperature
 sensitive
7 Coupling efficiency Very low. High.
8 Compatible fibers Multimode step index multimode Single mode Sl

ud
GRIN Multimode GRIN
9 Circuit complexity Simple Complex
10 Life time 105 hours. 104 hours.
11 Cost Low. High.
12 Output power Linearly proportional to drive Proportional to current

lo
current above the threshold
13 Current required Drive current 50 to 100 mA peak. Threshold current 5 to
40 ma
14 Applications Moderate distance low data rate. Long distance high data
C
rates.
tu
Important Formulae for LED and Laser
LED

•
V

•
 •
LASER

ud
1.

2.

3.

lo
C
tu
V
 UNIT IV
OPTICAL DETECTORS AND RECEIVERS

➢ The photo-diode is in fact a p-n junction put to the exact opposite use as the LED

ud
➢ The variation in current is a function of the incident light
➢ Use of the stimulated absorption of light by the semiconductor material for the
generation of electron-hole pairs.
➢ The energy of the absorbed photons to transfer the electrons from the ground to the
excited state contributes to the variation in circuit current.
➢ The energy of the absorbed photon must at least be equal to the band-gap of the

lo
material for the material to respond to the incoming photons.

PIN diode
➢ A simple way to increase the depletion-region width is to insert a layer of undoped (or
lightly doped) semiconductor material between the p–n junction.
C
➢ Since the middle layer consists of nearly intrinsic material, such a structure is referred
to as the p–i–n photodiode.
tu
V
 ➢ When photon enters photodetector, the low band gap absorption layer absorbs the
photon, and an electron-hole pair is generated. This electron hole pair is called
photocarrier.
➢ These photocarriers, under the influence of a strong electric field generated by a

ud
reverse bias potential difference across the device as shown in figure produce
photocurrent proportional to number of incident photons.

Avalanche Photo Diode (APD)

➢ All detectors require a certain minimum current to operate reliably. The current
requirement translates into a minimum power requirement through Pin=IpRPin=IpR.
➢ Detectors with a large responsivity R are preferred since they require less optical

lo
power.
➢ The responsivity of p–i–n photodiodes is limited while Avalanche photodiode (APDs)
can have much larger values of R.
C
tu
V
Working of APD

➢ APD is similar to PIN diode the exception is the addition of high intensity electric field
region.
➢ In this region primary electron hole pairs are generated by the incident photons which

ud
are able to absorb enough kinetic energy from strong electric field to collide with the
atoms present in this region, thus generating more electron hole pairs.
➢ The physical phenomenon behind the internal current gain is known as the impact
ionization.
➢ This impact ionization leads to avalanche breakdown in ordinary reverse bias. It
requires very high reverse bias voltage in order that the new carriers created by

lo
impact ionization can themselves produce additional carriers by same mechanism.
➢ This process of generating more than one electron hole pair from incident photon
through ionization process is referred to as the avalanche effect.
➢ Thus the avalanche multiplication results in amplification of photodiode current.
➢ Multiplication factor: Multiplication factor M is a measure of internal gain provided by
C
APD. It is defined as the ratio of total multiplied output current to the primary un
multiplied current.

M=IIpM=IIp
tu
Where I the Total multiplied output current

IpIp is the primary un multiplied current

Multiplication depends on physical and operational characteristics of photo detector device.

Operational characteristics include the width of avalanche region, the strength of electric
field and type of semiconductor material employed.
V
 Comparison:

Sr PIN diode APD (Avalanche photodiode)

no.

ud
1 PIN does not have high APD has high intensity electric field region.
intensity electric field region.

2 Photo current (IpIp) generated Photo current (IpIp) generated is more compared to PIN,
is less compared to APD
Ip=qNθ.M

lo
Ip=qNθ,
q = electron charge,
q = electron charge,
Nθ= carrier number,
Nθ = carrier number
M = multiplication factor
C
3 Responsively of PIN is limited. Responsively of APD can have much larger values.
tu
4 They exhibit lower noise levels. They exhibit higher noise levels as compared to PIN due
to impact ionization and photocurrent multiplication.

5 Response time of PIN is half Response time of APD is almost double that of PIN.
that of APD.
V

ADD COMMENT
The PIN-diode is an alteration of the PN-junction for particular applications. After the PN-
junction diode was developed in the year 1940s, the diode was first exercised as a high-
power rectifier, low-frequency during the year 1952. The occurrence of an intrinsic layer can

ud
significantly increase the breakdown voltage for the application of high-voltage. This intrinsic
layer also offers exciting properties when the device operates at high frequencies in the
range of radio wave and microwave. A PIN diode is a one kind of diode with an undoped,
wide intrinsic semiconductor region between a P-type and N-type semiconductor
region. These regions are normally heavily doped as they are used for Ohmic contacts. The
wider intrinsic region is indifference to an ordinary p–n diode. This region makes the diode an

lo
inferior rectifier but it makes it appropriate for fast switches, attenuators, photo detectors
and high voltage power electronics applications.
The PIN diode is a one type of photo detector, used to convert optical signal into an
electrical signal. The PIN diode comprises of three regions, namely P-region, I-region and N-
region. Typically, both the P and N regions are heavily doped due to they are utilized for
C
Ohmic contacts. The intrinsic region in the diode is in contrast to a PN junction diode. This
region makes the PIN diode a lower rectifier, but it makes it appropriate for fast switches,
attenuators, photo detectors and applications of high voltage power electronics.
tu

Photo detectors:
These are Opto-electric devices i.e. to convert the optical signal back into electrical impulses.
The light detectors are commonly made up of semiconductor material. Photo detectors made up of
V

semiconductor material. When the light strikes the light detector a current is produced in the external
circuit proportional to the intensity of the incident light.

Optical signal generally is weakened and distorted when it emerges from the end of the fiber,
the photo detector must meet following strict performance requirements.
 ➢ A high sensitivity to the emission wavelength range of the received light signal
➢ A minimum addition of noise to the signal
➢ A fast response speed to handle the desired data rate
➢ Be insensitive to temperature variations
➢

ud
Be compatible with the physical dimensions of the fiber
➢ Have a Reasonable cost compared to other system components
➢ Have a long operating lifetime

Some important parameters while discussing photo detectors:

Quantum Efficiency

It is the ratio of primary electron-hole pairs created by incident photon to the photon

lo
incident on the diode material.

Detector Responsivity

This is the ratio of output current to input optical power.Hence this is the efficiency of
the device.
C
Spectral Response Range

This is the range of wavelengths over which the device will operate.
tu
Noise Characteristics

The level of noise produced in the device is critical to its operation at low levels of input light.

Response Time

This is a measure of how quickly the detector can respond to variations in the input light intensity.
V

Types of Light Detectors

➢ PIN Photodiode
 ➢ Avalanche Photodiode

PIN photodiode

ud
InGaAs avalanche photodiode

lo
C
Photo detector materials

Operating Wavelength Ranges for Several Different Photo detector Materials

tu
V
In GaAs is used most commonly for both long-wavelength pin and avalanche photodiodes

Physical Principles of Photodiodes

The Pin Photodetector

ud
• The device structure consists of p and n semiconductorregions separated by a very
lightly n-doped intrinsic (i) region.
• In normal operation a reverse-bias voltage is applied across the device so that no free
electrons or holes exist in the intrinsic region.
• Incident photon having energy greater than or equal to the band gap energy of the
semiconductor material, give up its energy and excite an electron from the valence

lo
band to the conduction band

Pin Photodetector

the high electric field present in the depletion region causes photogenerated carriers
to separate and be collected across the reverse – biased junction. This gives rise to a current
C
flow in an external circuit, known as photocurrent.
tu
V