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    Kec053 Vlsi Technology

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    godparticle2019
    VLSI notes

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Kec053 Vlsi Technology

    Uploaded by

    godparticle2019
    90 views1 page
    VLSI notes

    Original Title

    KEC053-VLSI-TECHNOLOGY

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    © © All Rights Reserved

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    VLSI notes

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    90 views1 page

    Kec053 Vlsi Technology

    Uploaded by

    godparticle2019
    VLSI notes

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    Subject Code: KEC053


    0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

    BTECH
    (SEM V) THEORY EXAMINATION 2023-24
    VLSI TECHNOLOGY
    TIME: 3 HRS M.MARKS: 100

    Note: 1. Attempt all Sections. If require any missing data; then choose suitably.

    SECTION A
    1. Attempt all questions in brief. 2 x 10 = 20
    Qno. Question Marks CO
    a. Mention the advantages of ICs. 2 1
    b. Define polishing. 2 1
    c. What is auto doping in growth process? 2 2
    d. What is plasma oxidation? 2 2
    e. Explain photo mask. 2 3
    f. What are PR materials? 2 3
    g. Write the types of diffusion. 2 4
    h. Define ion-implantation 2 4
    i. Enlist different types of IC packages. 2 5
    j. Write all packaging design considerations. 2 5
    90

    2
    13
    _2

    SECTION B

    2.
    2. Attempt any three of the following: 10 x 3 = 30
    P1

    24
    a. Explain Electronic Grade Silicon with neat diagram 10 1
    4D

    b. Discuss Vapor-Phase Epitaxy. 10 2

    5.
    c. Explain in detail Optical Lithography. 10 3
    .5
    P2

    d. Explain fick’s law of diffusion. 10 4


    17
    Q

    e. Discuss Package Types and Packaging Design Considerations. 10 5


    |1

    SECTION C
    4 0

    3. Attempt any one part of the following: 10 x 1 = 10


    5:

    a. Explain CZ process in detail with neat diagram. What is the pull rate in CZ 10 1
    :4

    technique?
    13

    b. Discuss different shaping operations involved in preparing wafers with 10 1


    diagram.
    4

    4. Attempt any one part of the following: 10 x 1 = 10


    02

    a. Explain the principle of Molecular Beam Epitaxy. 10 2


    -2

    b. What is latch up? How it is avoided in CMOS technology? 10 2


    01

    5. Attempt any one part of the following: 10 x 1 = 10


    a. Explain the kinetics of wet watching. How gold is etched? 10 3
    9-

    b. How is the silicon nitride used? Explain its deposition variables. 10 3


    |2

    6. Attempt any one part of the following: 10 x 1 = 10


    a. Define sheet resistance. Describe a method for its measurement. 10 4
    b. Discuss gaseous and liquid diffusion system. 10 4
    7. Attempt any one part of the following: 10 x 1 = 10
    a. Explain Metallization and describe the problems associated with this process. 10 5
    b. What do you mean by Sputtering? Explain Sputtering yield. 10 5

    1|Page
    QP24DP1_290 | 29-01-2024 13:45:40 | 117.55.242.132

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