ASSIGNMENT 2

ELECTROSTRICTIVE DISC
NAME Pavan Kumar Vusa
ID NUMBER 2023ht80123
DATE 11/10/2024
TIME 10.00 pm – 12.00 am

AIM:
The work aims to simulate a electro strictive disc. The electro strictive effect describes the electric
field-induced strain within a material. It is particularly important for a class of materials known as relaxor
ferroelectrics

INTRODUCTION:
NUMERICAL MODELLING:
Electrostriction for a material of arbitrary symmetry can be represented as the following additive
contribution to the strain.

For ferroelectroelastic materials, the polarization vector is nonlinear function of the electric field and
possible stress in the material. One possible choice of the polarization shape is hyperbolic tangent.

The strain is computed from the mechanical displacement.

The effective tangential piezoelectric coupling coefficients can be computed as

PARAMETERS, MATERIALS AND METHOD:

• Parameters: Have kept 123 V as Maximum Applied Voltage as per roll number
Description Value
Time parameter 0s
Disc Thickness 0.002 m
Disc Radius 0.005 m
Electrostrictive Coupling Coefficient 0.0133 m4/C2
Electrostrictive Coupling Coefficient -0.00606 m4/C2
Young's Modulus 1.05E|| Pa
Poisson's Ratio 0.4
Density 7900 kg/m3
Saturation Polarization 0.2589 C/m2
Domain Wall Density 8.6207E5 V/m
Maximum Applied Voltage 123[MV/m]*H0 =2.46E5 V
F0 -80 MPa
• Material Selection: Electro strictive Disc surrounded by Air
Properties Needed: Density, Young’s Modulus, Poisson’s Ratio, Saturation Polarization and
Domain Wall Density
 • Simulation Steps:
Geometry Setup: Rectangle
Physics: Ferroelectroelasticity
• Meshing:
Mesh Type: Mapped and Free Triangular
• Simulation Setup:
Study Type: Stationary
• Post Processing: To visualize the surface plot of electric potential distribution and mechanical
displacement.
BOUNDARY CONDITIONS:
There are no specific boundary conditions.
GEOMETICAL MODEL AND MESH MODEL:
RESULTS AND DISCUSSION:

Fig 1: Surface plot of electric potential distribution in the electrostrictive material and surrounding air domain for a
246 kV applied voltage.

Fig 2: Surface plot of the mechanical displacement magnitude for F0 = 0 MHz

Fig 3: Surface plot of the mechanical displacement magnitude for F0 = -123 MHz

Fig 4: Axial polarization vs. axial electric field at the centre of the disc
 Fig 5: Axial electrostrictive strain vs. axial electric field at the centre of the disc.

Fig 6: Tangent piezoelectric coupling coefficients vs. axial electric field at the centre of the disc.

➢ Figure 1 shows the distribution of the electric potential in the material and in air around it.
➢ Figure 2 and 3, the displacement magnitude is visualized in 3D in case of no mechanical loading.
➢ Figure 4 shows a plot of the z-component of polarization plotted against the Z component of the electric
field at the centre of the disc.
➢ Figure 5 shows a similar plot of the ZZ-component of electrostrictive strain at the same position. A
series of both negative and positive voltages applied on the top surface of the disc lead to a change in
the sign and hence the direction of the electric field. However, the strain and displacement is always
unidirectional.
CONCLUSION:
The above study is important to understand how electro strictive disc works and how to model isotropic
ferroelectroelastic materials using COMSOL’s Ferroelectroelasticity interface.
 CAPACITIVE PRESSURE SENSOR
NAME Pavan Kumar Vusa
ID NUMBER 2023ht80123
DATE 11/10/2024
TIME 10.00 pm – 12.00 am

AIM:
The work aims to simulate a capacitive pressure sensor. Capacitive pressure sensors are gaining market
share over their piezoresistive counterparts since they consume less power, are usually less temperature
sensitive and have a lower fundamental noise floor. This model performs an analysis of a hypothetical sensor
design discussed using the electromechanics interface.

INTRODUCTION:
NUMERICAL MODELLING:
The below numerical modellings helps in understanding the working of a pressure sensor under an
applied pressure.

PARAMETERS, MATERIALS AND METHOD:

• Parameters: Have kept 123 V as Maximum Applied Voltage as per roll number
Description Value
Pressure 123 kPa
Operating Temperature 293.15 K
Die Bonding Temperature 343.15K
• Material Selection: Sensor Material: Silicon and Steel AISI 4340
Surrounding Medium: Vacuum
Properties Needed: Density, Young’s Modulus, Poisson’s Ratio, Coefficient of thermal
expansion & Relative Permittivity
• Simulation Steps:
Geometry Setup: Block
Physics: Electromechanics
 • Meshing:
Mesh Type: Mapped and Swept
• Simulation Setup:
Study Type: Stationary
• Post Processing: To visualize the surface plot of electric potential distribution and mechanical
displacement.
BOUNDARY CONDITIONS:
Sl. No. Component Name Boundary Condition (BC)
1 Boundary 13 Boundary Load
2 Domain 4 Terminal
3 Boundary 9 Ground
GEOMETICAL MODEL AND MESH MODEL:
RESULTS AND DISCUSSION:

Fig 1: Quadrant deflection when the pressure difference across the membrane is 25 kPa. As expected, the deflection is
greatest in the centre of the membrane.

Fig 2: The displacement of the structure due to an applied pressure of 65 kPa when packaging stresses are also
included in the model. Displacements are shown at the operating temperature of 20 °C, and are assumed to be zero at
the die bonding temperature of 70 °C.
 Fig 3: The displacement of the structure due to an applied pressure of 123 kPa when packaging stresses are also
included in the model. Displacements are shown at the operating temperature of 20 °C, and are assumed to be zero at
the die bonding temperature of 70 °C.

Fig 4: Electric potential in the sealed chamber, plotted on a slice between the two plates of the capacitor. The potential
has become nonuniform as a result of the pressure-induced deformation of the diaphragm
 Figure 5: Maximum and mean displacement of the membrane as a function of the applied pressure

Figure 6: Capacitance of the membrane as a function of applied pressure, both with and without the packaging
stresses. The linearized zero pressure capacitance variation

Observations:
➢ The complex interaction between the thermal stresses and the stresses introduced as a result of the
applied pressure has resulted in both an initial offset displacement and an increased dependence of the
displacement on the pressure.
➢ Thermal stresses are introduced into the structure as a result of the thermal conductivity mismatch
between the silicon die and the metal plate, and the elevated temperature used for the bonding process.
➢ These stresses change the deformation of the diaphragm in response to applied pressures and alter the
response of the sensor. In addition, because the stresses are temperature dependent, they introduce an
undesired temperature dependence to the device output.
CONCLUSION:
The above study is important to understand how capacitive pressure sensor works and performs an
analysis of a hypothetical sensor design discussed using the electromechanics interface.