PALESTINE POLYTECHNIC UNIVERSITY

COLLEGE of ENGINEERING ELECT RICAL

DEPARTMENT ELECTRONICS LAB

Experiment # 3

BJT Transistor Characteristics

Supervisor Dr: Shehda Zahda

Name: Ashrakat balout

& Rahaf_Natsheh

Novmber 2, 2024
Summary
This experiment explores the current-voltage (I-V) characteristics of a **Zener
diode**, highlighting its behavior in both forward and reverse bias. In forward bias,
the Zener diode functions like a regular PN junction diode, with a standard voltage
drop. However, in reverse bias, once the voltage reaches the **Zener breakdown
voltage**, the diode allows a significant current to flow while maintaining a stable
voltage, a key feature that makes it useful for **voltage regulation**.

The experiment also investigates **line regulation** and **load regulation**. Line
regulation describes how the output voltage remains stable despite changes in input
voltage, while load regulation refers to the stability of the output voltage as the load
current varies. These properties demonstrate the Zener diode’s ability to handle
voltage fluctuations, making it an effective component for maintaining consistent
voltage levels in electronic circuits.

Note:
The 2N3219 transistor used is a type of NPN transistor and is considered a bipolar
junction transistor (BJT). This transistor is usually used in applications that require
amplification of high-frequency signals, as it has a high response speed and can
handle frequencies up to tens of megahertz.

Equipment’s
Zener diode, Resistor, Connecting wires, Voltmeter, Ammeters, DC power supply.

Objectives
1.Investigate the current-voltage (I-V) characteristics of a Bipolar Junction Transistor
(BJT).
2.Analyze the behavior of the BJT under different biasing conditions.
3.Understand the operating regions of the transistor.
4. Evaluate the DC current gain of the BJT.
5. Identify any deviations from ideal transistor behavior.
6. Gain hands-on experience with transistor testing techniques.
7. Enhance understanding of BJT operation in practical electronic circuits.
To test the validity and normal operation of an AN7809 linear voltage
regulator using a Digital Multimeter (DMM), you can follow these steps:

Components Required
AN7809 linear regulator
DMM (Digital Multimeter)
Power supply (input voltage)
Load resistor (optional for testing under load)

1. Base Voltage&Current.
To make an NPN transistor work, When a voltage of 0.7 volts is applied
to the base, a small current starts to flow from the base to the
emitter,This current is called the base current (Ib), and it is very small
compared to the collector current (Ic).

2. Collector Voltage&Current.
When the base current (Ib) starts flowing, the transistor opens and
collector current (Ic) starts flowing from the collector to the emitter. The
collector current depends on the base current, so c ≈ β * Ib, where β is
the amplification factor of the transistor.

The output, which is the collector current, is a multiple of the base

current, which amplifies the input signal.

3.Output Voltage (Vce).

When the transistor is in the ON state (i.e. there is current through the base), Vce is
low, this is called saturation.
NOTE:
Saturation is important in applications where we need the transistor to act as an
electronic switch.

Why does cutoff occur? When there is not enough current through the base (or no
current at all), the base-emitter junction does not get enough forward bias to turn
on the transistor. As a result, no collector current flows through the IC, and the
collector-emitter current becomes zero or close to zero.
Circuits diagram
Results and tables

Forward- Revers- Transistor

Biased Biased Status
Reading Reading
Base- 0.674V 0. Good
Emitter
Junction
NPN NPN
Base- 0.6V ‫ إلى‬0.7V. (Open). Good
Collector
Junction

Note:
- The voltage V_{CE} should remain constant.
---
1. Setting the Voltage V_{CE} :
- Determine the fixed value of V_{CE} that will be applied during the tests.
---
2. Raising the Base Voltage V_{BB} :
- Gradually and continuously increase the voltage V_{BB} (‫)تدريجًيا‬.
---
3. Expected Results:
Input Characteristic Curve of BJT Transistor:
- Relationship between V_{BE} and I_B :**
1. Initially:
- At small values of V_{BE} , I_B is close to zero.
- This is because the transistor has not yet entered the conduction region (Cutoff
Region).

2. With IncreasingV_{BE} :
- The current I_B starts to rise rapidly after reaching the threshold voltage
V_{BE} , which is usually about 0.6V to 0.7V for silicon transistors.

3. Behavior After a Certain Point:

- The curve becomes **nonlinear** (Nonlinear Behavior) at higher values of
V_{BE} .
- At this stage, the transistor enters the conduction state (Active Region).
---
4. Input Resistance R_{IN}:
- The value of R_{IN} is relatively small (usually less than a few kilo-ohms).
- This indicates that the transistor easily allows current to pass to the base at small
voltages.

- The input resistance R_{IN} decreases as V_{BE} increases.

- This is because the current I_B becomes more responsive to small increases in
voltage.
---
Additional Notes

Input characteristics are generally nonlinear because a transistor is a semiconductor

device, so you don't expect a perfectly straight line.

The threshold voltage is the point at which the conduction characteristic of a

transistor begins, and is a constant value that depends on the material used (such as
silicon or germanium.

��(��)
0 50 100 150

���(�) ��(��)

0 0 0 0 0
0.5 0 2.88 6.68 10.90
1 0 2.90 6.88 10.97
2 0 2.93 6.94 11.09
4 0 2.97 7.04 11,30
6 0 3.02 7.16 11.53
8 0 3.06 7.26 11.81
10 0 3.11 7.40 12.06

SUCH THAT:
For each value of IB , vary the value of ��E
Measure and record the collector current (��) obtained for each corresponding
value of ��E
Graphs
 ‫ي‬ ‫يلحظ من الرسم أن مضاىف التيار يزداد بزيادة تيار القاىدة‪ ،‬مما يدل ىل أن ت‬
‫الرانزستور ف هذا النطاق‬
‫حى قيمة معينة‪.‬‬ ‫يعزز التيار بشكل ث‬
‫أكر كفاءة مع زيادة تيار القاىدة ت‬

‫‪Calculation‬‬
‫‪Rin=ΔVBE/ΔIB at constant VCE‬‬

‫‪Rout=ΔVCE/ΔIC at constant IB Rout=(7.16-7.04)∗ 10^−3 = 16.67kΩ‬‬

‫‪β=ΔIC/ ΔIB‬‬

‫‪RCE=IC\VCE= 13.36‬‬

‫)‪P=VCE×IC=6×7.16×10−3=0.043W(43.0mW‬‬

‫‪ AV:‬الفولت تضخًم معامل‬

‫​‪AV=−β×Rin\RL‬‬

‫‪ fc:‬القطع التردد‬
‫‪fc​ =1\2πRin​ Cin‬‬

‫الدائرة أو الترانزستور تضخًم عنده يبدأ الذي التردد هو )‪“fc​ (Cutoff Frequency‬‬
‫أن للدائرة يمكن الذي للتردد القصى الحد هو ‪،‬آخر بمعنى ‪.‬كبًر بشكل التناقص في اللكترونًة‬
‫”‪.‬ملحوظ بشكل التضخًم يتناقص أن قبل فعال بشكل الشارة تضخم‬
 Conclusion
The input resistance (RI)
In short, is the resistance that blocks the flow of current between the base and the
collector, and it is low when the transistor is operating in forward bias, meaning it
passes current easily. In fact, a transistor is in forward bias when the voltage
between the base and collector is greater than the voltage that makes the forward
junction conductive, which means that current can easily flow through this part of
the transistor.

Output Resistance (RO):

is the resistance offered by the transistor when connected between the collector
and the source, and is often high due to reverse biasing. In this case, the junction
between the collector and the emitter is refractory, where the voltage prevents the
current from flowing easily. This results in a high resistance in this region.

Current Gain (β):

is the ratio of the change in collector current to the change in base current. In short,
this factor determines how much a transistor can amplify current. If β is larger, it
means that the transistor can amplify small changes in base current into much larger
changes in collector current, making it a powerful signal amplifier.

*(Input resistance is simply the resistance of the transistor that is seen by the source that supplies
current to the transistor (usually a voltage or current source). In a transistor, this resistance is located
between the base and the collector.Because the voltage between the base and the collector is greater
than the voltage that turns off the transistor, and therefore the current passes easily through the
junction between the base and the collector.The resistance of this junction is small, meaning that the
transistor does not significantly oppose the flow of current in this case.(