Pak-Austria Fachhochschule Institute of Applied

Sciences and Technology, Haripur, Pakistan

DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING

COURSE: Electronic Circuit Design

COURSE CODE: ECE-213

Lab 2

Submitted by:
Name: Annus Luqman

Reg# B20F0313EE015
Submitted to:

Name: Engr Khurram khan

Designation: Lab Engineer

Comments:
In this task we set the fix value of resister and we change the values of voltage source and we saw that for different
values of voltage source we get the straight line graph.

Task 2:

Comments:
In this task we use step command to change the different values of Resister first we set X value 10 and 100. Then we
initialize the values of voltage source from -10 to 10 by giving it the increment of 0.1 to see the two graphs on
different voltage and resister.

Task 3:

Comments:
In this task we replace the resister to diode to see its IV curve, step command is used again to variate the temperature
of diode. By changing its temperature values diode’s parameters become changed and for different voltage values we
get different IV curves.

Task 4:

Comments:
In this task we place BJT or transistor to see its collector current. In this task we skip step command and we use two
different sources and change its values, for these different values we plot different graph.
Task 5:

Comments:
In this task we place a 4 terminal NMOS here we connect the one voltage source V1 which is connected between Drain
and Source and other is places between Gate and Source. Then we set model command to set the threshold voltage
which is 0.8 and then wo apply voltage on gate from 0.6 to 3, and also variate Drain to source voltage from 0 to 5. And
finally we plot the different graphs of Drain current.

Task 5:

Comments:
This is same as my previous task but in this task we use step command to variate thr values of Gate Voltage.

Conclusion:
In our recent laboratory session conducted using LTspice, we delved into the intricacies of DC Sweep analysis, a
powerful technique employed to scrutinize the behavior of electronic components across a range of DC operating
conditions. This comprehensive analysis encompassed a diverse array of components, including resistors, diodes,
bipolar junction transistors (BJTs), and NMOS (N-channel Metal-Oxide-Semiconductor) transistors, each subjected to
the DC Sweep command.

Exploration of Component Characteristics:

Throughout the lab, we meticulously examined the responses of these components as the DC operating conditions were
systematically varied. This meticulous exploration provided invaluable insights into the fundamental characteristics of
each component type, shedding light on their unique behaviors and operational parameters.

Resistors:

The DC Sweep analysis of resistors elucidated their fundamental property of linear resistance. By varying the applied
DC voltage across the resistor and observing the resulting current flow, we gained a deeper understanding of Ohm's
Law and the linear relationship between voltage and current in resistive elements.

Diodes:

The analysis of diodes under DC Sweep conditions facilitated a comprehensive exploration of their forward and reverse
bias characteristics. By sweeping the DC voltage across the diode and observing the resulting current-voltage (I-V)
curve, we scrutinized key parameters such as forward voltage drop and reverse leakage current, crucial for effective
diode utilization in electronic circuits.

Bipolar Junction Transistors (BJTs):

DC Sweep analysis of BJTs allowed us to delve into their intricate behavior under varying base-emitter and collector-
emitter voltages. By examining the transistor's collector current as a function of these voltages, we gained insights into
important parameters such as the transistor's forward active region, saturation region, and cutoff region, essential for
transistor amplifier and switching applications.

NMOS Transistors:

Similarly, the analysis of NMOS transistors under DC Sweep conditions provided a deep understanding of their behavior
in response to varying gate-source and drain-source voltages. By scrutinizing parameters such as threshold voltage and
drain current, we gained valuable insights into the operation of NMOS transistors, crucial for their application in digital
and analog circuits.

Practical Significance:

This practical exercise in DC Sweep analysis not only deepened our understanding of individual component
characteristics but also equipped us with valuable skills for effective circuit design and analysis. By gaining insights
into how components behave under different DC conditions, we are better prepared to design and optimize electronic
circuits for a wide range of applications, ultimately enhancing our proficiency in the field of electronics engineering.

In conclusion, the DC Sweep analysis conducted in this LTspice lab served as a comprehensive exploration of electronic
component characteristics, offering valuable insights that will undoubtedly inform our future endeavors in circuit design
and analysis. Through hands-on experimentation and meticulous observation, we have fortified our understanding of
fundamental electronic principles, laying a solid foundation for continued growth and exploration in the field of
electronics engineering.