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BE - Assignment - I (2024)

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8 views

BE - Assignment - I (2024)

Uploaded by

nityanandasenapati6
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ASSIGNMENT-I

1. In a silicon semiconductor diode, 𝐼𝑠 = 30 𝜇𝐴 at 27𝑜 𝐶 . Find the diode current at 62𝑜 𝐶 for a 12 V supply
voltage.
2. Difference between drift current and diffusion current.
3. A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole concentration at 300 K?
4. Explain the operation of PN junction diode under different biasing conditions with necessary diagrams
and equations. Also draw its V-I characteristics.
5. Derive the mathematical expression for Vdc, Vrms, ripple factor, PIV and efficiency for a full-wave and
half-wave rectifier.
6. In a full wave rectifier circuit circuit the input voltage is 230 V and the transformer ratio is 3:1. Determine
the for Vdc, Vrms, ripple factor, maximum power, average power, PIV and efficiency of the rectifier for
RL equal to 200 Ohm.
7. Draw the VI Characteristic of an ideal Si diode and practical Ge diode.
8. Justify that the diode is a nonlinear bipolar device.
9. Find the ac resistance of aPN-junction Si diode at room temperature for diode current of 12 mA.
10.

For 𝑣𝑖 = 15 𝑉 and 𝑉 = 5 𝑉. Draw the output waveform for a sinusoidal input.

11. Draw a positive bias positive clamper and explain its operation with a proper diagram.
12.

Draw the output of the above circuit with proper explanation.

13. Determine the output waveform for the sinusoidal input of the figure given below:
14. Determine the dc resistance levels for the diode for the figure given below.
a. ID = 2 mA (low level)
b. ID= 20 mA (high level)
c. VD=210 V (reverse-biased)

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