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High Frequency Devices

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14 views15 pages

High Frequency Devices

Uploaded by

Aaditi Rammohan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electronic Devices

High Frequency, High Power Devices


➢ Tunnel Diode
➢ IMPATT Diode
➢ Gunn Diode

Slide 1
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
➢ The tunnel diode is a p-n junction device that operates in certain
regions of its I-V characteristic by the quantum mechanical
tunneling of electrons through the potential barrier of the
junction.
➢ Also called the Esaki diode after L. Esaki, who received the Nobel
Prize in 1973.
➢ Exhibits the negative resistance Property
➢ If electron concentration n exceeds then Fermi level lies within the
conduction band.
➢ When this occurs, the material is called degenerate n-type
➢ Similar for p type also

Slide 2
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
➢ A p-n junction between two degenerate semiconductors is
illustrated in terms of energy bands.

➢ In tunnel diodes,
electrons can directly
tunnel from the
conduction band of n-
region into the valence
band of p-region. Thus,
electric current is
produced in tunnel
diode.

Slide 3
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
Step 1: Unbiased tunnel diode

➢ When no voltage is
applied to the tunnel
diode, it is said to be an
unbiased tunnel diode. In
tunnel diode, the
conduction band of the n-
type material overlaps
with the valence band of
the p-type material
because of the heavy
doping.
Slide 4
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
Step 2: Small voltage applied to the tunnel diode

When a small voltage is


applied a small number of
electrons in the conduction
band of the n-region will
tunnel to the empty states of
the valence band in p-region.
This will create a small
forward bias tunnel current.

Slide 5
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
Step 3: Applied voltage is
slightly increased

➢ When the voltage applied


to the tunnel diode is
slightly increased, a large
number of free electrons
at n-side and holes at p-
side are generated.
Because of the increase in
voltage, the overlapping of
the conduction band and
valence band is increased.
Slide 6
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
Step 4: Applied voltage is
further increased

➢ If the applied voltage is


further increased, a slight
misalign of the conduction
band and valence band
takes place.
➢ The tunneling current
starts decreasing.

Slide 7
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
Step 5: Applied voltage is
largely increased

➢ If the applied voltage is


largely increased, the
tunneling current drops to
zero. At this point, the
conduction band and
valence band no longer
overlap and the tunnel
diode operates in the
same manner as a normal
p-n junction diode
Slide 8
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Tunnel Diode
Applications of tunnel diodes

➢ Tunnel diodes are used as logic memory storage devices.


➢ Tunnel diodes are used in relaxation oscillator circuits.
➢ Tunnel diode is used as an ultra high-speed switch.
➢ Tunnel diodes are used in FM receivers.

Slide 9
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
IMPATT Diode
➢ IMPATT - Impact Ionization Avalanche Transit Time (Negative
Resistance Device)
➢ IMPATT diode can be considered to consist of two areas, namely the
avalanche region or injection region, and secondly the drift region.
➢ The avalanche or injection region creates the carriers which may be
either holes of electrons
➢ Drift region is where the carriers move across the diode taking a
certain amount of time dependent upon its thickness.
➢ The two types of carrier
drift in opposite directions.

Slide 10
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Gunn Diode (TEDs)
➢ TED’s are semiconductor devices with no junctions
➢ They are fabricated from compound semiconductors like
GaAs, InP, CdTe etc.
➢ TED’s operate with hot electrons whose energy is much
greater than the thermal energy.

Slide 11
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Gunn Diode (TEDs)
➢ Invented by J.B Gunn in 1962

Slide 12
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Gunn Diode (TEDs)
➢ Gunn Effect:
➢ concepts related with RWH Theory.
Two valley model

Slide 13
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Gunn Diode (TEDs)
➢ 2. Two Valley Model Theory

Slide 14
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices
Gunn Diode (TEDs)
➢ Applications of Gunn Diodes

➢ In radar transmitters
➢ Air traffic control (ATC) and Industrial Telemetry
➢ Broadband linear amplifier
➢ Fast combinational and sequential logic circuit
➢ Low and medium power oscillators in microwave receivers
➢ As pump sources

Slide 15
Dr. Vilas BITS Pilani, Dubai Campus Electronic Devices

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