Power Electronics Lab Manual

PC-EE-594

HOOGHLY ENGINEERING & TECHNOLOGY

COLLEGE
Vivekananda Road, Pipulpati, Post- Chinsurah, West Bengal 712103

Department of Electrical Engineering

POWER ELECTRONICS LAB - PC-EE594

5th- SEMESTER

LABORATORY MANUAL
Prepared by

Shilpi Saha

Assistant Professor

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Power Electronics Lab Manual
PC-EE-594

Sl. No. List of Experiments:

Introduction and application of power electronics devices by using

1
MATLAB(Simulation)

2 Study of the characteristics of an SCR

3 Study of the characteristics of a TRIAC

Study of different triggering circuits of an SCR

4

Study of performance of step-down chopper with R and R-L load.

5

Study of the operation of a single phase full controlled bridge converter with R
6 and R-L load. (simulation)

Study of performance of single-phase controlled converter with and without

7 source inductance (simulation)

Study of performance of step up and step-down chopper with MOSFET, IGBT

8 and GTO as switch(simulation)

Study of performance of single-phase half controlled symmetrical and

9 asymmetrical bridge converter. (simulation)

Study of performance of three phase-controlled converter with R & R-L load.

10 (simulation)

Study of performance of PWM bridge inverter using MOSFET as switch with R

11 and R-L load((simulation)

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Experiment No: 1
TITLE: IDENTIFICATION, OPERATION AND APPLICATIONS OF DIFFERENT POWER
SEMICONDUCTOR SWITCHES
OBJECTIVE:

Study the characteristics of different power semiconductor switches. Study the performance of different
semiconductor switches in MATLAB
THEORY:

Power semiconductor switches are fundamental components in modern power electronics, enabling
efficient control and conversion of electrical energy in various applications. Below is an overview of the
main types of power semiconductor switches:
• MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistors): The
Power MOSFET Unlike the bipolar junction transistor (BJT), the MOSFET device belongs
to the Unipolar Device family, since it uses only the majority carriers in conduction. The
development of the metal oxide semiconductor technology for microelectronic circuits
opened the way for developing the power metal oxide semiconductor field effect transistor
(MOSFET) device in 1975. MOSFETs which are most widely used are n-channel
Enhancement-mode or p-channel Enhancement-mode or n-channel Depletion-mode in
nature.
The Structure and symbol of Power MOSFET:

Operating Regions of a MOSFET: When used as a switching device, only triode and cut-off
regions are used, whereas, when it is used as an amplifier, the MOSFET must operate in the
saturation region, which corresponds to the active region in the BJT.
Most of the MOSFET devices used in power electronics applications are of the n-channel,
enhancement-type. For the MOSFET to carry drain current, a channel between the drain and the
source must be created.

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This occurs when the gate-to-source voltage exceeds the device threshold voltage, VTh. For VGS
> VTh, the device can be either in the triode region, which is also called “constant resistance”
region, or in the saturation region, depending on the value of VDS . For given VGS , with small
VDS (VDS < VGS −VTh), the device operates in the triode region(saturation region in the BJT), and
for larger VDS (VDS > VGS − VTh), the device enters the saturation region (active region in the
BJT).

For triode or linear region of operation: VDS < VGS − VTh and VGS > VTh

For saturation region of operation: VDS > VGS − VTh and VGS > VTh

For cut-off region of operation: VGS < VTh

CIRCUIT DIAGRAM:

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SIMULATION DIAGRAM:

Applications of Power MOSFET:

The power MOSFET’s are used in the power supplies, DC to DC converters, Dc to AC
converters.

• IGBT (INSULATED-GATE BIPOLAR TRANSISTORS): The Insulated Gate Bipolar

Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar
Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a
semiconductor switching device. The IGBT Transistor takes the best parts of these two types of
common transistors, the high input impedance and high switching speeds of a MOSFET with the
low saturation voltage of a bipolar transistor, and combines them together to produce another type
of transistor switching device that is capable of handling large collector-emitter currents with
virtually zero gate current drive.

The Structure and symbol of Power MOSFET:

When we compare the structure of the IGBT with N- channel MOSFET there is additional P+ layer
substrate over N+ layer. This layer makes PN junction diode with drift layer, this layer is called as
inject layer because it injects holes in the n- layer. There are two types of impurities in the n type
drift layer.

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Operating Regions of an IGBT:

IGBTs (Insulated-Gate Bipolar Transistors) operate in two primary regions: the cutoff region and the
active (saturation) region. In the cutoff region, the gate-to-emitter voltage is below the threshold level,
preventing current from flowing through the device. This means the IGBT is effectively in its "off"
state, behaving like an open switch that blocks current flow. In contrast, when the gate-to-emitter
voltage surpasses the threshold voltage, the IGBT enters the active or saturation region, allowing it to
conduct. In this state, the device operates like a closed switch, enabling current to flow from the
collector to the emitter with minimal voltage drop across it. This is the "on" state of the IGBT

The given graph shows the relation between the collector current IC and collector-emitter voltage VCE at
different levels of VGE. At VGE < VGET the IGBT is in cutoff mode and the IC = 0 at any VCE. At VGE >
VGET, the IGBT goes into active mode, where the IC increases with an increase in VCE. Furthermore, for
each VGE where VGE1 < VGE2 < VGE3, the IC is different.

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The reverse voltage should not exceed the reverse breakdown limit. So does the forward voltage. If they
exceed their respective breakdown limit, uncontrolled current starts passing through it.

CIRCUIT DIAGRAM:

SIMULATION DIAGRAM:

Applications of IGBT

IGBTs are used in various applications such as AC and DC motor drives, Unregulated Power
Supply (UPS), Switch Mode Power Supplies (SMPS), traction motor control and induction
heating, inverters, used to combine an isolated-gate FET for the control input and a bipolar
power transistor as a switch in a single device, etc.

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• POWE-DIODE: Power diodes are semiconductor devices designed to handle significant current
and voltage levels, making them essential for a range of power electronics applications. They act
as unidirectional current switches that conduct current when forward-biased and block current
when reverse-biased.
The Structure and symbol of Power diode:

Characteristics of a Power Diode

The cut-in voltage is the value of the minimum voltage for V A (anode voltage) to make the diode
work in forward conducting mode. The cut-in voltage of the power diode it is 1 V, which makes its
typical forward conduction drop larger.
Under forward-bias conditions, the case of the power diode, it almost increases linearly with the
applied voltage as all the layers of P-N remain saturated with minority carriers under forward bias.

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Power Electronics Lab Manual
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CIRCUIT DIAGRAM:

SIMULATION DIAGRAM:

Applications of power-diode

Power diodes play an essential role in a wide variety of power electronics applications as a rectifier
Diode, For Voltage Clamping, as a Voltage Multiplier and as a freewheeling Diode

• SCR (SILICON-CONTROLLED RECTIFIER)

A SCR is a four-layer 3 junction p-n-p-n semiconductor device consisting of at least three p-n
junctions, functioning as an electrical switch for high power operations. It has three basic

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terminals, namely the anode, cathode and the gate mounted on the semiconductor layers of the
device.
The Structure and symbol of SCR:
The symbolic diagram and the characteristics of thyristor is shown in the figure below,

Characteristics of SCR

A Silicon Controlled Rectifier (SCR) is a power semiconductor device known for its ability to
manage and control large currents in power electronics. An SCR functions as a switch that remains
off until triggered by a current pulse to the gate. Once activated, it allows current to flow from the
anode to the cathode and stays on as long as the current remains above a certain threshold called
the holding current. If the current drops below this level, the SCR switches off. The SCR features
a latching characteristic, meaning it continues conducting after the gate signal is removed,
provided the anode current stays sufficient.

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Power Electronics Lab Manual
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CIRCUIT DIAGRAM:

SIMULATION DIAGRAM:

Applications of SCR
1. AC power control application.
2. Motor control circuit.
3. Power regulator.
4. Lamp dimming.

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• TRIAC (TRIODE FOR ALTERNATING CURRENT):

A TRIAC is defined as a three terminal AC switch which is different from the other silicon-
controlled rectifiers in the sense that it can conduct in both the directions that is whether the applied
gate signal is positive or negative, it will conduct. Thus, this device can be used for AC systems
as a switch.
The Structure and symbol of SCR:
This is a three terminal, four-layer, bi-directional semiconductor device that controls AC power.

Figure shows the symbol of TRIAC, which has two main terminals MT1 and MT2 connected in inverse
parallel and a gate terminal.
Characteristics of TRIAC

The TRIAC characteristics is similar to SCR but it is applicable to both positive and negative TRIAC
voltages. The operation can be summarized as follows-
First Quadrant Operation of TRIAC: Voltage at terminal MT2 is positive with respect to terminal MT1
and gate voltage is also positive with respect to first terminal.
Second Quadrant Operation of TRIAC: Voltage at terminal 2 is positive with respect to
terminal 1 and gate voltage is negative with respect to terminal 1.

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Power Electronics Lab Manual
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Third Quadrant Operation of TRIAC: Voltage of terminal 1 is positive with respect to terminal
2 and the gate voltage is negative.
Fourth Quadrant Operation of TRIAC: Voltage of terminal 2 is negative with respect to
terminal 1 and gate voltage is positive.

CIRCUIT DIAGRAM:

SIMULATION DIAGRAM:

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Applications of TRIAC:
1. They are used in control circuits.
2. It is used in High power lamp switching.
3. It is used in AC power control

• Procedure for all circuits in MATLAB simulation:

1. Study the simulated model as shown in figure.1.
2. Open MATLAB by double clicking on the icon.
3. From the file menu create a new file as POWER_ELECTRONICS_BASIC.
4. Open Simulink library from the toolbar in your new file.
5. Open Sim Power System under Simulink.
6. Open Electrical Sources Lib. and drag the ac voltage sources and set its amplitude.
7. Open the Connector Block Lib. and copy Ground Block in your new file.
8. Open the Element Lib. and drag a Series RLC branch. Set the parameters as: R = 1
OHM
9. Find out Current measurement block, Voltage measurement block and Scope.
10. Open the power electronics block and take suitable semiconductor icon as per your
requirement (i.e thyristor, MOSFET, diode, TRIAC and IGBT)
11. Open-source block and drag the pulse generator and set the value.
For MOSFET and IGBT:
Amplitude: 1v or more than 1v
Time period: Put the value of total time (on time + offtime)
Pulse Width: Put any value in percentage (may be 25%, 30%, 50%)

For SCR: Amplitude: 1v or more than 1v

Time period: 20mili second (20e-3 or .02)
Pulse Width: Put any value in percentage (may be 25%, 30%, 50%)
Phase delay: Put the value of firing angle must be converted in time. (i.e 18deg=1mili
second)
For TRIAC:
Thyristor1: Set the value of pulse generator

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Amplitude: 1v or more than 1v

Time period: 20mili second (20e-3 or .02)
Pulse Width: Put any value in percentage (may be 25%, 30%, 50% as per your
requirement)
Phase delay: Put the value of firing angle must be converted in time. (i.e 18deg=1mili
second)
Thyristor2: Set the value of pulse generator
Amplitude: 1v or more than 1v
Time period: 20mili second (20e-3 or .02)
Pulse Width: Put any value in percentage (may be 25%, 30%, 50%)
Phase delay: Put the value of firing angle with addition of 180 degree or 10 milliseconds.
12. Connect all these parameters as per the figure.

13. SIMULATION PARAMETER SETTINGS:

Select the solver type as ode23tb and set the suitable run time.
14. Run the simulation and observe the waveforms.

Report:
1. Find the voltage across load and source.
2. Find the current through the load and source.
3. Observe the voltage and nature of current during switching across the switch.

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Experiment No: 2
TITLE: STUDY OF THE CHARACTERISTICS OF AN SCR.
OBJECTIVE:

To study the V-I characteristics of an SCR and hence to measure the holding current and the latching
current.

THEORY

A Silicon Controlled Rectifier (SCR) is a type of thyristor and a semiconductor device used for
switching and controlling power. It acts as a switch, conducting when its gate receives a triggering
current and remaining in the conducting state as long as it is forward biased.

Structure of SCR: An SCR consists of four layers of semiconductor materials, forming a PNPN
structure with three junctions: J1, J2, and J3. It has three terminals: Anode (A), Cathode (K) and Gate
(G)

Fig. 2.1(a): Constructional details and schematic

diagram of SCR

The V-I characteristics of an SCR can be divided into three regions:

Forward Blocking Region (Off State): When the anode is positive with respect to the cathode but the
gate is not triggered, the SCR remains in an off state. It allows a small leakage current through it.

Forward Conduction Region (On State): When a gate pulse is applied while the anode is positive, the
SCR switches to a conducting state, allowing a large current to flow through. It remains conducting until
the current falls below a certain holding current level.

Reverse Blocking Region: When the cathode is positive relative to the anode, the SCR is in the reverse
blocking state. The current is minimal, and it behaves like a reverse-biased diode.

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Fig. 2.1(b): The V-I characteristics of an SCR

V-I Characteristics:

Latching Current (IL): The minimum current required to turn on the SCR and keep it in the conducting
state without gate current.

Holding Current (IH): The minimum current needed to keep the SCR conducting. If the current drops
below this, the SCR turns off.

Breakover Voltage (VBO): The voltage at which the SCR switches from the forward blocking to the
forward conduction region without a gate signal.

Gate Control: Applying a small positive current at the gate terminal triggers the SCR. The gate current
should be greater than the minimum gate current (IG) required to turn the SCR on.

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CIRCUIT DIAGRAM:

Fig. 2.2: Circuit Diagram for SCR Characteristic

Analysis

EQUIPMENT USED:
1. SCR trainer kit
2. Voltmeter (0 – 50V)
3. Mili- Ammeter (0-50 mA)
4. Mili- Ammeter (0-50 mA)
5. Patch chord

PROCEDURE:

1. Make the circuit as shown in the above fig.2.2.

2. Connect a milli-ammeter to the Gate & Pot (Ig limiter) to measure the Ig, gate current.
Connect a milli ammeter to the load, to measure the SCR current, IA . Connect a DC voltmeter
across the DCsupply.
3. Now, switch on the Trainer Kit.
4. Put all the supplies in zero level, i.e., V= 0 volt. (or as low as minimum) and Ig = 0
5. Now, switch off the Trainer Kit, wait for 5 – 10 sec and switch on to reset the device.
6. Apply a certain voltage Vgk to the Gate Circuit. Vary the VAK in the anode-cathode circuit slowly
so that IA flows and note down the value of Ig when IA starts to flow. Note down this IA value
also. Therewill be a rapid change (increase) in IA . Stop increase the value of IA.
7. Now, vary VAK and note down IA for each step. Switch off the sources and reset the pots.
8. Repeat the same procedure with increased value of gate voltage Vgk. Filled up Table2.1.
9. Now fixed the anode to cathode voltage to a certain value and increase the gate voltage so
that theSCR triggers. Take the readings and filled up table 2.2.

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EXPERIMENTAL RESULTS:

Table-2.1

Sl.No. Gate Voltage, VG Anode to Cathode Anode current, IA

Voltage, VAK (Volts) (milliamps)
(Volts)

Table-2.2

Sl.No. Anode to Cathode Anode current, IA Gate Current, Ig

Voltage, VAK (Volts) (milliamps)
(milliamps)

REPORT:

1. Plot anode to cathode voltage vs anode current characteristics at a fixed gate voltage.

2. Define latching current and holding current.

3. Explain the nature of the V-I characteristics obtained from the experiment.

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Experiment No: 3
TITLE: STUDY OF R-C TRIGGERING CIRCUIT FOR AN SCR.
OBJECTIVE:

To trigger an SCR using the R-C triggering method and observe the output waveforms of the SCR
using a CRO.

THEORY

A Silicon Controlled Rectifier (SCR) is a type of thyristor used for switching and power control
applications. It acts as a switch that can turn on and conduct current once it is triggered by a gate signal
and remains on until the current through it drops below a certain threshold, known as the holding current.
The control of the gate signal is essential for precise operation, and one common method for triggering an
SCR is using an R-C (resistor-capacitor) triggering circuit. The triggering angle control limitation of the
diode resistance triggering circuit can be overcome by the diode-resistance-capacitance triggering circuit.
The figure shows the RC-half wave trigger circuit. The conduction period can be controlled over the full
180° range. By varying the value of R1, the trigger can be controlled from 0 to180 degree. During the
positive half cycle, the capacitor C charges to the trigger voltage of the thyristor in a time determined by
the RC time constant and the applied anode voltage. During the negative half cycle, the capacitor charges
to the peak supply voltage at t = (- ∏/2). After this period, the supply voltage decreases and reaches zero
at t = 0. During this period the capacitor voltage becomes positive during the positive half cycle of the ac
input, the capacitor begins to charge through the variable resistance R1, in the opposite direction and as
soon as it charges to a positive voltage equal to the gate trigger voltage, the thyristor turns ON. Here the
diode D2 is used to prevent the negative voltage between the gate and the cathode through the diode D1
during the negative half-cycle.

CIRCUIT DIAGRAM:

Fig. 3: Circuit Diagram of R-C triggering for an

SCR

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EQUIPMENT USED:
1. Bread board
2. 230v,50Hz supply
3. CRO
4.SCR=TYN 612, D1=D2=IN4007
5.Multimeter

PROCEDURE:

1. Make the circuit as shown in the above fig.3

2. Connect the CRO across the load resistance.
3. Switch on the supply and the CRO

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Experiment No: 3
TITLE: STUDY OF THE CHARACTERISTICS OF A TRIAC.
OBJECTIVE:

To study the forward and reverse characteristics of a TRIAC.

THEORY

TRAIC (Triode acts as AC) three terminals bi- directional high-power device. Here conduction takes place
in both directions, i.e., from MT1 to MT2 or MT2 to MT1.Gate terminal is. towards MT. IN operation,
TRIAC is equivalent to two SCR’s connected anti parallelly. The layer diagram & symbolic representation
of TRIAC is as shown in Fig.3, V – I characteristic of SCR and TRIAC are similar. The only difference
is that V – I characteristics is symmetrical in case of TRIAC. TRIAC can be run on in four modes.

Triggering in quadrant I

I+ Mode: - IN this mode MT2 is positive with respect MT1 and the gate is made positive with respect to
MT1. TRIAC turns on as conventional thyristor.

Triggering in quadrant II

I- Mode: IN this mode MT2 is positive with respect MT1 and the gate is made negative with respect to
MT1.

Triggering in quadrant III

III+ Mode: IN this mode MT2 is negative with respect MT1 and the gate is made negative with respect
to MT1.

Triggering in quadrant IV

III- Mode: IN this mode MT2 is negative with respect MT1 and the gate is made positive with respect to
MT1.

Fig. 3.1: Constructional details and schematic diagram of TRIAC

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CIRCUIT DIAGRAM:

Fig. 3.2: Circuit Diagram for TRIAC Characteristic

Analysis

EQUIPMENT USED:
1. TRIAC trainer kit
2. Voltmeter (0- 50 V)
3. Mili – Ammeter (0 – 50 mA)
4. Mili – Ammeter (0 – 50 mA)
5. Patch chord

PROCEDURE:

1. Make the circuit as shown in the above fig.3.2.

2. Connect a milli-ammeter to the Gate & Pot (Ig limiter) to measure the Ig, gate current. Connect a

milli ammeter to the load, to measure the TRIAC current, IA . Connect a DC voltmeter across the

DCsupply.

3. Now, switch on the Trainer Kit.

4. Put all the supplies in zero level, i.e., V= 0 volt. (or as low as minimum) and Ig = 0

5. Now, switch off the Trainer Kit, wait for 5 – 10 sec and switch on to reset the device.

6. Now set the gate voltage at a certain value.

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7. Increase anode and cathode voltage so that the TRIAC conducts (1st quadrant operation). Take the

readings, filled up table no.3.1

8. Repeat the same procedures for 2nd, 3rd ,4th quadrant operation. Filled up table no.3.2 for 3rd

quadrant operation.

Table-3.1(Forward characteristics)

Sl.No. IG VMT1MT2 (Volts) IMT2(milliamps)

(In mA)

Table-3.2 (Reverse characteristics)

Sl.No. IG VMT1MT2 (Volts) IMT2(milliamps)

(In mA)

REPORT:

Draw the VMT1MT2 vs IMT2 graph with constant iG in both forward and reverse condition.

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Experiment No: 5
TITLE: STUDY OF PERFORMANCE OF STEP-DOWN CHOPPER WITH R LOAD.
OBJECTIVE:

Study the operating principle of a step-down chopper (Buck-Converter) and hence to plot the output
waveforms for a resistive load.

THEORY

A Silicon Controlled Rectifier (SCR) is a type of thyristor and a semiconductor device used for
switching and controlling power. It acts as a switch, conducting when its gate receives a triggering
current and remaining in the conducting state as long as it is forward biased.

A chopper is a switching circuit that converts a fixed DC voltage into a variable DC voltage. Choppers
are used in applications where variable DC voltage is required, such as in trolley cars, buses, marine
hoists, lifts, and electric locomotives. These systems rely on choppers for speed control and braking,
which are achieved using solid-state devices. The chopper system provides smooth control, fast
response, and high-frequency operation.

There are two main types of choppers: a) Step-down Chopper: The average output voltage across the
load is less than the input voltage. b) Step-up Chopper: The average output voltage across the load is
greater than the input voltage.

Figure 5.1 shows the circuit diagram of a step-down chopper. A MOSFET is used as the switching
device in this circuit. During the MOSFET's ON time (Ton), current flows through Vin, the MOSFET,
the inductor (L), and the load. As a result, the voltage across the load is Vin. During the MOSFET's OFF
time (Toff), current freewheels through the inductor, the load, and the freewheeling diode (FWD),
causing the voltage across the load to drop to zero. Consequently, the average output voltage is less than
the input voltage.

The average output voltage Vo is given by:

𝑡𝑜𝑛
𝑉0 = 𝑉𝑖𝑛 = D𝑉𝑖𝑛
𝑇

where D is the duty cycle

CIRCUIT DIAGRAM:

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Fig. 5.1 circuit diagram of step-down chopper

EQUIPMENT USED: -

1. Trainer Kit with dc power supply

2. Patch chord
3. Cathode Ray Oscilloscope
4. Bayonet Neill Concelman (B N C) cable

PROCEDURE:

1. Study the circuit diagram.

2. Make connections as shown in circuit diagram.
3. Supply a trigger pulse to the gate of MOSFET.
4. Switch on the DC supply.
5. Vary the duty cycle using the POT on triggering circuit.
6. Connect C R O probe across the load and observe the output.
7. Note the TON and TOFF time of MOSFET from CRO/DSO.
8. Measure the output voltage for every variation of the duty cycle.
9. Filled up Table.5.1. Switch off the supply and reset all the POT.
EXPERIMENTAL RESULTS:

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Vin= ................... Volt

Table7.1

Triggering pulse TON TOFF Duty cycle, Output Voltage, VL,

{D=TON/ (TON + TOFF )} Volt
width (msec) (msec)

With Without
Capacitor Capacitor

25% OF TON

50% OF TON

75% OF TON

REPORT:

Draw the input pulses and the output voltage for both with and without capacitor waveform
with respect to timeon graph paper.

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Experiment No: 6
TITLE: STUDY OF THE PERFORMANCE OF SINGLE-PHASE CONTROLLED
CONVERTER WITH R AND R-L LOAD(SIMULATION).
OBJECTIVE:

To simulate the operation of a single phase fully controlled bridge converter and hence to observe the
effect of load inductance on the performance of the same.

THEORY

A single phase full controlled rectifier with four SCRs, instead of diodes is used to provide a controlled
output voltage by varying the delay or firing angle of thyristors. If a purely source inductance is
incorporated in the circuit, during the turn on process of incoming thyristors the current builds up
gradually from zero to final value and during commutation process of outgoing thyristors currents
decreases gradually from initial value to zero.

Fig. 6.1(a): Schematic diagram of fully controlled bridge converter with R load.

Fig. 6.1(b): Schematic diagram of fully controlled bridge converter with R-L load.

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CIRCUIT DIAGRAM:

Fig. 6.2: Simulink model for Fully controlled bridge converter with R/R-L load

PROCEDURE:

1. Open MATLAB. Go to new Model from file menu in the work space of MATLAB.
2. Open Sim Power System under Simulink Library. Open Power Electronics Lib under Sim
Power System. Drag thyristor block on the new model to form the bridge converter as per the
circuit diagram.
3. Drag single phase ac voltage source from Electrical source Lib under Sim Power System and set
the peak amplitude as 100V and frequency as 50 Hz.
4. Drag single phase RLC Series Load from Elements Lib under Sim Power System and set the
nominal voltage and active power as 100 V and 1000 Watt respectively.
5. Drag Voltage and Current Measurement block from Measurement Lib under Sim Power
System.
6. Drag Pulse generator from source under Simulink. Set the parameters as:
Period: 20msec; pulse width: 10 %; phase delay: 0.003 for thyristor 1 and thyristor 2
Period: 20msec; pulse width: 10 %; phase delay: 13msec for thyristor 3 and thyristor 4
7. Drag terminator and Scope from sink and Mux from Signal routing under Simulink.
8. Connect as per the Circuit diagram (Fig 6.2). Set the Simulation parameter and then run the model.
9. To observe the effect of load inductance, make a model as per fig. 6.1(b) and run the model.

REPORT:

Plot the following curves.

i) Load voltage and load current with respect to time.
ii) Source voltage and source current with respect to time.
iii) Find out the RMS value of output voltage from definition.

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Power Electronics Lab Manual
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Experiment No: 7
TITLE: STUDY OF THE PERFORMANCE OF SINGLE-PHASE CONTROLLED
CONVERTER WITH AND WITHOUT SOURCE INDUCTANCE (SIMULATION).
OBJECTIVE:

To simulate the operation of a single phase fully controlled bridge converter and hence to observe the
effect of source inductance on the performance of the same.

THEORY

A single phase full controlled rectifier with four SCRs, instead of diodes is used to provide a controlled
output voltage by varying the delay or firing angle of thyristors. If a purely source inductance is
incorporated in the circuit, during the turn on process of incoming thyristors the current builds up
gradually from zero to final value and during commutation process of outgoing thyristors currents
decreases gradually from initial value to zero.

Fig. 7.1: Schematic diagram of fully controlled bridge converter without source inductance.

Fig. 7.2: Schematic diagram of fully controlled bridge converter with source inductance.

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Power Electronics Lab Manual
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CIRCUIT DIAGRAM:

Fig. 7.3: Simulink model for Fully controlled bridge converter without source inductance

Fig. 7.4: Simulink model for Fully controlled bridge converter with source inductance.

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Power Electronics Lab Manual
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PROCEDURE:

10. Open MATLAB. Go to new Model from file menu in the work space of MATLAB.
11. Open Sim Power System under Simulink Library. Open Power Electronics Lib under Sim
Power System. Drag thyristor block on the new model to form the bridge converter as per the
circuit diagram.
12. Drag single phase ac voltage source from Electrical source Lib under Sim Power System and set
the peak amplitude as 100V and frequency as 50 Hz.
13. Drag single phase RLC Series Load from Elements Lib under Sim Power System and set the
nominal voltage and active power as 100 V and 1000 Watt respectively.
14. Drag Voltage and Current Measurement block from Measurement Lib under Sim Power
System.
15. Drag Pulse generator from source under Simulink. Set the parameters as:
Period: 20msec; pulse width: 10 %; phase delay: 0.003 for thyristor 1 and thyristor 2
Period: 20msec; pulse width: 10 %; phase delay: 13msec for thyristor 3 and thyristor 4
16. Drag terminator and Scope from sink and Mux from Signal routing under Simulink.
17. Connect as per the Circuit diagram (Fig 7.3(a)). Set the Simulation parameter and then run the
model.
18. To observe the effect of source inductance, make a model as per fig. 7.4 and run the model.

REPORT:

1. Plot the following curves.

i) Load voltage and load current with respect to time.
ii) Source voltage and source current with respect to time.
iii) Find out the RMS value of output voltage from definition.

2. How have the parameters of the Pulse generator been selected?

3. Explain the effect of source inductance on the operation of fully controlled bridge converter.

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Power Electronics Lab Manual
PC-EE-594

Experiment No: 8
TITLE: STUDY OF PERFORMANCE OF STEP-UP AND STEP-DOWN CHOPPER WITH
MOSFET, IGBT AND GTO AS SWITCH (SIMULATION).
OBJECTIVE:

To simulate the performance of a step up and step-down chopper with MOSFET as switch and hence to
plot the waveforms across the chopper.

THEORY

A dc chopper is a static device used to obtain a variable dc from a source of constant dc voltage. A
chopper circuit normally consists with a power semiconductor device (SCR, BJT, MOSFET, IGBT
etc.), input dc power supply, elements (R, L, C etc.) and load. The average output voltage across the
load is controlled by varying the on and off period of the switch i.e. the power semiconductor device.
The power diode operates in freewheeling mode to provide a path to load current when the switch is off.
The inductor filters out the ripples in the load current.
Step-Down Chopper (Buck Converter): Reduces the input voltage by switching the current through a
controlled path to the output, allowing for a lower output voltage than the input. Application: Power
supply units, battery chargers, DC motor control.
Step-Up Chopper (Boost Converter): Transfers energy from input to output by storing energy in an
inductor during the "on" state and releasing it to the output during the "off" state, thereby boosting the
voltage. Application: Renewable energy systems (e.g., solar inverters), electric vehicles.

Fig. 8.1(a): Schematic diagram of step-down chopper (Buck converter).

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Power Electronics Lab Manual
PC-EE-594

Fig. 8.1(a): Schematic diagram of step-up chopper (Boost converter).

CIRCUIT DIAGRAM:

Fig. 8.2(a): Simulink model for Step-down chopper circuit (Buck converter)

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Power Electronics Lab Manual
PC-EE-594

8.2(b): Simulink model for Step-up chopper circuit (Boost converter)

PROCEDURE:

1. Open MATLAB. Go to new Model from file menu in the work space of MATLAB.
2. Open Sim Power System under Simulink Library. Open Power Electronics Lib under
Sim Power System. Drag MOSFET and Diode block on the new model to form the chopper
circuit as per the circuit diagram.
3. Drag dc voltage source from Electrical source Lib under Sim Power System and set the
amplitude as 100V.
4. Drag single phase RLC Series Branch from Elements Lib under Sim Power System and set
the magnitude of R. Connect an Inductance in series with the MOSFET.
5. Drag Voltage and Current Measurement block from Measurement Lib under Sim Power
System.
6. Drag Pulse generator from source under Simulink. Set the parameters as :
Period: 10msec; pulse width: 70 %; phase delay: 0
7. Drag terminator and Scope from sink and Mux and Demux from Signal routing under
Simulink.
8. Connect as per the Circuit diagram (Fig 8.2(a)& (b)). Set the Simulation parameter and then
run the model.

REPORT:
1. Plot the following curves.
a. Output voltage of the chopper and load current with respect to time.
b. Source voltage and source current and pulses with respect to time.
c. Voltage across the MOSFET and the current through it.
2. Explain the nature of the chopper voltage waveform and waveforms of the MOSFET.
3. Calculate the RMS value of the output voltage.

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Power Electronics Lab Manual
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Experiment No: 9
TITLE: STUDY OF PERFORMANCE OF SINGLE-PHASE HALF CONTROLLED
SYMMETRICAL AND ASYMMETRICAL BRIDGE CONVERTER (SIMULATION).
OBJECTIVE:

To simulate the operation of a single-phase half controlled symmetrical and asymmetrical bridge converter
and hence to plot the voltage and current waveforms.

THEORY

A single-phase semi converter or single-phase half controller generally consists of two SCRs and two
diodes. Single phase semi converter with one SCR and one diode in each leg is called symmetrical semi
converter and two SCRs in one leg and two diodes in other leg is called single phase asymmetrical semi
converter.

Fig. 9.1: Schematic diagram of Single-phase symmetrical semi converter

Fig. 9.2: Schematic diagram of Single-phase asymmetrical semi converter

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Power Electronics Lab Manual
PC-EE-594

CIRCUIT DIAGRAM:

Fig. 9.3: Single-phase symmetrical semi converter

Fig. 9.4: Single-phase asymmetrical semi converter.

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Power Electronics Lab Manual
PC-EE-594

PROCEDURE:

1. Open MATLAB. Go to new Model from file menu in the work space of MATLAB.
2. Open Sim Power System under Simulink Library. Open Power Electronics Lib under Sim
Power System. Drag thyristor and diode block on the new model to form the bridge converter as
per the circuit diagram.
3. Drag single phase ac voltage source from Electrical source Lib under Sim Power System and set
the peak amplitude as 500V and frequency as 50 Hz.
4. Drag single phase RLC Series Load from Elements Lib under Sim Power System and set the
nominal voltage and active power as 500 V and 1000 Watt respectively and inductive reactive
power as 700 VAR.
5. Drag Voltage and Current Measurement block from Measurement Lib under Sim Power
System.
6. Drag Pulse generator from source under Simulink. Set the parameters as: For symmetry and
asymmetry:
Period: 20msec; pulse width: 10 %; phase delay: 0.003 for thyristor 1
Period: 20msec; pulse width: 10 %; phase delay: 13msec for thyristor 2
7. Drag terminator and Scope from sink and Mux and Demux from Signal routing under Simulink.
8. Connect as per the Circuit diagram (Fig 9.3 and Fig 9.4). Set the Simulation parameter and then run
the model.

REPORT:

1. Plot the following curves.

i) Load voltage and load current with respect to time.
ii) Source voltage and source current with respect to time.
iii) Voltage across the thyristor and current through it.

2. Calculate the rms value of the output voltage from definition.

3. What are the differences between symmetrical and asymmetrical converter.

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Power Electronics Lab Manual
PC-EE-594

Experiment No: 10
TITLE: STUDY OF PERFORMANCE OF THREE PHASE CONTROLLED CONVERTER
WITH R AND R-L LOAD (SIMULATION).
OBJECTIVE:

To observe the performance of a three-phase controlled converter using thyristor with R and R-L load
and hence to plot the waveforms across the load.

THEORY

Three phase-controlled bridge converters usually known as six pulse converter consists with two groups
of SCRs, positive group and negative group. SCR T1, T3 and T5 form a positive group whereas SCRs
T4, T6 and T2 form a negative group. For six pulse operation, each SCR will trigger twice in its
conduction cycle that is firing intervals should be 60º and each SCR can conduct for 120º. The output
voltage will have a ripple frequency of 300 Hz for any value of α.

Fig. 10.1: Schematic diagram of a three-phase controlled converter.

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Power Electronics Lab Manual
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CIRCUIT DIAGRAM:

Fig.10.2: Simulink model for Three phase-controlled converter

PROCEDURE:

1. Open MATLAB. Go to new Model from file menu in the work space of MATLAB.

2. Open Sim Power System under Simulink Library. Open Power Electronics Lib under Sim
Power System. Drag Thyristor block on the new model to form the chopper circuit as per the circuit
diagram.

3. Drag three AC voltage sources from Electrical source Lib under Sim Power System and set the
amplitude as 230V, frequency 50 Hz. Set the phases as for A: 0, for B: 240º, for C: 120º.

4. Drag single phase RLC Series Branch from Elements Lib under Sim Power System and set the
magnitude of R and L.

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Power Electronics Lab Manual
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5. Drag Voltage and Current Measurement block from Measurement Lib under Sim Power
System.

6. Drag Pulse generators from source under Simulink. Set the parameters as :

Period: 20msec; pulse width: 10 %; phase delay: 1.66msec for Th1

Period: 20msec; pulse width: 10 %; phase delay: 11.66msec for Th4
Period: 20msec; pulse width: 10 %; phase delay: 8.33msec for Th3
Period: 20msec; pulse width: 10 %; phase delay: 18.33msec for Th6
Period: 20msec; pulse width: 10 %; phase delay: 15msec for Th5
Period: 20msec; pulse width: 10 %; phase delay: 5msec for Th2
7. Drag terminator and Scope from sink and Mux and Demux from Signal routing under Simulink.

8. Connect as per the Circuit diagram (Fig 11.2). Set the Simulation parameter and then run the model.

REPORT:

1. Plot the following curves.

i) Output voltage across the load and load current with respect to time.

ii) Source voltages and source currents for all the three phases.

2. Calculate the average and rms value of the output voltages.

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Power Electronics Lab Manual
PC-EE-594

Experiment No: 11
TITLE: STUDY OF PERFORMANCE OF 1-Փ PWM BRIDGE INVERTER USING
MOSFET AS SWITCH WITH R AND R-L LOAD.
OBJECTIVE:

To simulate the performance of a single phase PWM bridge inverter with MOSFET as switch and hence
to plot the waveforms across the inverter for R and R-L load.

THEORY

A full bridge inverter is a type of DC-to-AC converter that converts direct current (DC) to alternating
current (AC). It is widely used in power electronics to supply AC power from DC sources. Pulse Width
Modulation (PWM) is employed to control the output voltage and frequency of the inverter by switching
the power devices (MOSFETs) on and off. A PWM full bridge inverter consists of four MOSFET
switches arranged in an H-bridge configuration. The switches are controlled using a PWM signal, which
varies the width of the pulses according to the desired output waveform. The full bridge topology
enables the production of a bipolar AC output by alternating the current flow through the load in both
directions. The output is tested with resistive (R) and resistive-inductive (R-L) loads to observe
performance variations.

Fig. 11.1: Schematic diagram of single-phase bridge inverter.

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Power Electronics Lab Manual
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CIRCUIT DIAGRAM:

11.2: Simulink model for single-phase bridge inverter

PROCEDURE:

9. Open MATLAB. Go to new Model from file menu in the work space of MATLAB.
10. Open Sim Power System under Simulink Library. Open Power Electronics Lib under
Sim Power System. Drag MOSFET and Diode block on the new model to form the inverter
circuit as per the circuit diagram.
11. Drag dc voltage source from Electrical source Lib under Sim Power System and set the
amplitude as 100V.
12. Drag single phase RLC Series Branch from Elements Lib under Sim Power System and set
the magnitude of R and R-L load.
13. Drag Voltage and Current Measurement block from Measurement Lib under Sim Power
System.
14. Drag Pulse generator from source under Simulink. Set the parameters as:
Period: 20msec; pulse width: 50 %; phase delay: 0 for Q 1 and Q4
Period: 20msec; pulse width: 50 %; phase delay: 10msec for Q 2 and Q3

15. Drag terminator and Scope from sink and Mux and Demux from Signal routing under
Simulink.

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Power Electronics Lab Manual
PC-EE-594

16. Connect as per the Circuit diagram (11.2). Set the Simulation parameter and then run the
model.

REPORT:
Plot the following curves.

a. Output voltage of the inverter and load current with respect to time.
b. Source voltage and source current and pulses with respect to time.

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