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22b3912 Lab11 Report

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20 views8 pages

22b3912 Lab11 Report

Uploaded by

keshavsamdani3
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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EE236: Electronic Devices Lab

Lab No . 11
Mohammad Sami, 22b3912

October 20, 2024

1 Aim of the Experiment


To characterize the NMOS (2N007) and analyze the temperature dependence of its mobility.

2 Design of the Experiment

D
 G  0-32V
12V  Pot 
S Vds

Figure 1: Cicrcuit for MOS Characterization

The experiment is divided into two parts.


In part(I), we perform characterization at room temperature (28◦C), wherein Vds is kept constant at 3V
and Vgs is varied from 0 to 2V. VT (Threshold Voltage) and β = µnCox L× W is extracted from this
table. In part(II), we fix Vds at 0.6V (Linear Region) and vary Vgs from 0.6+VT to 10V and note down the
Ids value. From this, we tabulate β for each reading. This is performed at 30◦C, 50◦C and 70◦C
respectively.
Variation of mobility with temperature is then analyzed.
3 Experimental Results and Calculations
3.1 Part(I): Input Characterization at Ambient Temperature
Vds is fixed at 3V (Saturation)

Vgs Ids(mA)
0 0.001
0.1 0.001
0.2 0.001
0.3 0.001
0.4 0.001
0.5 0.001
0.6 0.001
0.7 0.001
0.8 0.001
0.86 0.002
0.9 0.003
0.95 0.005
1 0.01
1.1 0.05
1.15 0.109
1.22 0.329
1.27 0.677
1.3 1.03
1.35 1.947
1.4 3.49
1.45 5.91
1.5 9.46
1.55 14.4
1.6 22.4
1.65 31.3
1.7 48.9
1.75 63.4
1.8 80.7
1.85 94.4
1.9 116.6
1.95 142.7
2 171.6

Table 1: Ids vs Vds at Room Temp


Figure 2: Ids vs Vgs at room temp

√
Figure 3: IDS vs Vgs at room temp

r
= β(V
√ — VT) (1)
ID GS r
√2 β
slope = ID (2)
=
Threshold Voltage = 1.15 Volts
VGS 2
β = 2 × (slope )
2

=⇒ β = 818.284 mA/V 2
3.2 Part(II) : Mobility Extraction
Vds is fixed at 0.6V

Vgs(V) Ids(mA)-30C Ids(mA)-50C Ids(mA)-70C


1.6 22 22 25
1.8 67 68 72
2 140 142 145
2.2 214 215 214
2.4 259 258 256
2.6 285 283 280
2.8 303 301 297
3 315 314 310
3.2 325 324 320
3.4 334 332 328
3.6 341 339 335
3.8 347 345 340
4 352 350 346
5 373 370 364
6 386 382 377
7 395 391 386
8 402 398 393
9 408 403 398
10 412 407 402

Table 2: Ids vs Vgs at different temperatures

Vgs(V) beta-30C beta-50C beta-70C


1.6 244.4444444 244.4444444 277.7777778
1.8 319.047619 323.8095238 342.8571429
2 424.2424242 430.3030303 439.3939394
2.2 475.5555556 477.7777778 475.5555556
2.4 454.3859649 452.6315789 449.122807
2.6 413.0434783 410.1449275 405.7971014
2.8 374.0740741 371.6049383 366.6666667
3 338.7096774 337.6344086 333.3333333
3.2 309.5238095 308.5714286 304.7619048
3.4 285.4700855 283.7606838 280.3418803
3.6 264.3410853 262.7906977 259.6899225
3.8 246.0992908 244.6808511 241.1347518
4 230.0653595 228.7581699 226.1437908
5 175.1173709 173.7089202 170.8920188
6 141.3919414 139.9267399 138.0952381
7 118.6186186 117.4174174 115.9159159
8 102.2900763 101.2722646 100
9 90.06622517 88.96247241 87.85871965
10 80.31189084 79.33723197 78.3625731

Table 3: variation of β with Vgs at different temp


The peak in β in the β vs. Vgs graph for a given temp is beacause as Vgs starts increasing, channel
inversion gets stronger, hence increasing the effective mobility. However, after a point, channel pinches off
(when the mosfet is well into saturation) and further increase in electric field at the gate (Vgs) only makes
the channel at the drain side narrower and narrower, thus making the effective mobility drop.
Variation of β with temperature for low and high Vgs

Temp(C) beta(mA/V 2)@V gs = 1.8V beta(mA/V 2)@V gs = 8V


30 319.05 102.29
50 323.81 101.27
70 342.86 100

At low electric fields, we can see that beta increases with temperature due to Coloumn Scattering. While
at higher electric fields (Vgs = 8V), β (and hence mobility) decreases with temperature due to Phonon
scattering.

4 Completion Status
All the parts of the experiment was completed within the lab.

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