UJT Notes
UJT Notes
uni
B1
J
ot a ihlly doPed yPe Si5 baY into hich
N- upe
Consis\s ob
Bse e.
heaviy doped p-Pe matevial is diffused cbser to Buc
’ t Rors a Single PN juncHon
’ The avrow in the Cmiler yeesents the direclion ot conventonal
CuYYent
* E9U'Na lent civcuiti
+ Diodc D' yepresents pN JoncHon
* Tner boaje vesistonce betaee n
B2 and B) i5
RB2
D
RBB R8 +RB2
VBB ohen TE =o
VE V81
BI
’ R8, > R82 (ie) RB 5 atg1GaBer isvayieble esislor cohich
de Pend on the bìay voltage
* Intrinsic sland- of ato!
aPplied B)then
betoeen B, is B
t wollage
oith Gmiler open,tNol NBBAs
lageNB N
Payt ob VB8 is dyoPRed oyey R8 and
aa KB2
foraavd biased
bay.
Holes ane injecBedinto N-tyPe
by 8)
-’ These 'holes MC Neelled by 8 and ave attyacted
This veducey the yesislance RBI and in creayey DE
ohere
(o-7)!
Vp ’ cut -in vol4a9e ob diode
vegion 6otuvb4ion
Negion
VES VP Hhe tmi}eys Yevevs e biajed:theve isa Srmall
Je akase Cyvent.
UIT is in obt Condiion ’ Ahe vegionlef} ot the Pak
Point s cul- obb wcgion