Lab3: Bipolar Junction Transistor Amplifier Circuits

October 14, 2024

1 Objective
To examine the Common Emitter bipolar junction transistor amplifier characteristics and op-
eration
There is a pre-lab that you need to do before coming to the lab. The parts that
are highlighted in red should be completed before coming to the lab

2 Aparatus
For this experiment you will need

1. Power supply

2. Oscilloscope

3. Function generator

4. NPN transistor BC107B (see the attached data sheet at the end of document)

3 DC operation point
Consider the circuit shown in Figure 1. Set Vcc= +12 V (DC), RB1 = 112KΩ, RB2 = 72 KΩ,
RE = 3.2KΩ and RC = 5 KΩ.

3.1 Theory
Using the techniques learned in class, calculate all the node voltage and currents making all
the relevant assumptions (assume β = 150; VBE = 0.7 V ) and fill in the Table 3.1.

Table 1: DC Bias operation poin

Calculated Measured
IE
IC
IB
VE
VC
VB

1
 Figure 1: Single stage common emitter amplifier

3.2 Practical
Connect the circuit as shown in Figure 1 and measure all the node voltages and currents and
complete Table 3.1. Note that the currents can be calculated from measured voltages
using Ohms law when the resistances are known.

Do not dismantle the circuit you have already built, you will be using it in the
next section.

3.3 Discussion
1. Compare the values obtained from calculations and measurements. What mode is the
transistor on?

2. From the measured values calculate the transistor’s β. What is the difference between
the assumed and calculated value of β? How does this affect the accuracy of calculations?
The β of the transistor is also known as the forward current gain with symbol hF E . What
value is reported as the hF E on the data sheet? how does it compare to the one you
calculated from measurements.

4 Amplifying an AC signal
We have learnt that the amplification characteristics of the amplifier are determined by the DC
bias conditions.
From the DC bias conditions calculated above, apply the small signal model and calculate
the gain (Av = vout /vin ) of the amplifier circuit. Use an source resistance Rsig = 50 Ω and no
load resistor (i.e. RL = ∞)
Connect the signal generator as shown in Figure 2 and apply an AC signal of 1 mV at
100 kHz. Ensure that the input is less than 10 mV by pressing the -20 dB attenuation on the

2
signal generator (if required, pull out the AMPL knob to obtain further 20dB attenuation ).
Use capacitors CIN = Cout = 10µF and CE = 100µF . Be mindful when collecting capacitors,
and observe the polarities. Observe and sketch the output of the circuit.

Figure 2: Applying an ac signal

4.1 Discussion
1. Measure the ratio of the output voltage to the input voltage (Av = vout /vin )

2. What is the phase relation between the input and the output voltage? What type of
amplifier is the common-emitter amplifier in terms of the phase difference between the
input signal and the output signal?

3. Vary the DC voltage supply Vcc from 15V to 12V to 10V and 7V, and note the gain of
the circuit. Discuss how and why the gain is related to the supply voltage VCC . hint: IC
is the clue

3
 NPN BC107 – BC108 – BC109

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18
metal package.
They are suitable for use in drive audio stages, low-noise input audio stages and as low power,
high gain general purpose transistors.
The complementary PNP are BC177, BC178 and BC179.
Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol BC107 BC108 BC109 Unit

VCEO Collector-Emitter Voltage (IB =0) 45 20 20 V
VCBO Collector-Base Voltage (IE =0) 50 30 30 V
VEBO Emitter-Base Voltage (IC =0) 6 5 5 V
IC Collector Current 100 mA
ICM Collector Peak Current 200 mA
PD Total Power Dissipation @ Tamb = 25° 300 mW
TJ Junction Temperature 175 °C
TStg Storage Temperature range -65 to +150 °C

ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified

Symbol Ratings Test Condition(s) Min Typ Max Unit

BC107
VCB = 20 V
BC108 - - 15 nA
IE = 0
BC109
ICBO Collector Cutoff Current
VCB = 20 V BC107
IE = 0 V BC108 - - 15 µA
Tj = 150°C BC109
BC107
VEB = 5 V
IEBO Emitter Cutoff Current BC108 - - 50 nA
IC = 0
BC109
BC107 45 - -
Collector-Emitter IC = 10 mA
VCEO BC108 20 - - V
Breakdown Voltage IB = 0
BC109 20 - -
BC107 50 - -
Collector-Base IC = 10 µA
VCBO BC108 30 - - V
Breakdown Voltage VBE = 0
BC109 30 - -
BC107
Emitter-Base Breakdown IE = 10 µA
VEBO BC108 5 - - V
Voltage IC = 0
BC109

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 NPN BC107 – BC108 – BC109
Symbol Ratings Test Condition(s) Min Typ Max Unit
BC107
IC = 10 mA
BC108 - 0.09 0.25
IB = 0.5 mA
Collector-Emitter BC109
VCE(SAT) V
saturation Voltage BC107
IC = 100 mA
BC108 - 0.2 0.6
IB = 5 mA
BC109
BC107
IC = 10 mA
BC108 - 0.70 -
IB = 0.5 mA
Base-Emitter Saturation BC109
VBE(SAT) V
Voltage BC107
IC = 100 mA
BC108 - 0.9 -
IB = 5 mA
BC109
BC107
IC = 2 mA
BC108 0.55 0.65 0.7
VCE = 5 V
BC109
VBE Base-Emitter Voltage V
BC107
IC = 10 mA
BC108 - - 0.77
VCE = 5
BC109
BC107A
BC108A - 90 -
BC109A
BC107B
IC= 10 µA
BC108B 40 150 -
VCE= 5 V
BC109B
BC107C
BC108C 100 270 -
BC109C
hFE DC Current Gain (*) -
BC107A
BC108A 110 - 220
BC109A
BC107B
IC= 2 mA
BC108B 200 - 450
VCE= 5 V
BC109B
BC107C
BC108C 420 - 800
BC109C
IC =10 mA, VCE BC107
fT Transition frequency =5V BC108 100 - - MHz
f = 100 MHz BC109
IC = 200 µA VCE BC107 - - 10
=5V
F Noise figure f = 1kHz BC108 - - 10 db
Rg= 2kΩ
B = 200Hz BC109 - - 4

IE = 0 BC177
CC Collector capacitance VCB = 10 V BC178 - 4 6 pF
f = 1MHz BC179

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 NPN BC107 – BC108 – BC109

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

RthJ-a Thermal Resistance, Junction to mounting base 500 °C/W
RthJ-c Thermal Resistance, Junction to ambient in free air 200 °C/W

MECHANICAL DATA CASE TO-18

DIMENSIONS (mm)
min max
A 12.7 -
B - 0.49
C 0.9 -
D - 5.3
E - 4.9
F - 5.8
G 2.54 -
H - 1.2
I - 1.16
L 45° -

Pin 1 : emitter
Pin 2 : base
Pin 3 : Collector
Case : Collector

August 2012
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use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.

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