Shahjalal University of Science Technology &

Department of Electrical and Electronic Engineering

4th year 1st Semester Final Examination

Course Code: EEE 455 Time: 2 Hours

Course Title: VLSIII Total Marks: 100

Answer any two questions from each part.

Part A

1. a) What isLatch-up problem? Explain the equivalent circtuit of Latch-up with

different solution schemes adopted by the chip design inductry to address the

Latch-up problem. 5+10-15

b) What is crosstalk? Show how crosstalk could adversely affect operation in a

circuit? How could the effect of cross talk be minimized? 10

Explain the variation of MOS gate capacitance with voltage in the cuttoff,

linear and saturation regions. 10

YSketeh a static CMOS gate computing Y = (A +B+C) D. Also draw the
stick diagram
for this circuit. 5+5 10
What is C*MOs? How MOS works as a capacitor? 5

Define Propagation delay, Contamination delay, Rise time, Fall time, and

Edge rate. 10
JSketch a 3-input NOR gate with transistor widths chosen to achieve effective
rise and fall resistance equal to that of a unit inverter (R). Annotate
thegate
with itsgate and diffusion capacitances. Assume all diffusion nodes are con-
tacted. Then sketch and explain the equivalent circuits for the falling output
transition and for the worst-case rising output transition. 5+5+5=15

Part B

hy MOSFETs? What
channel length modulationand body
are the remedies?
effect take place in the scaled
10

hat is Elmore Delay model?

the output is loaded with
Estimate

h identical
tpaf

NAND
and tpdr

gates.
for a 3-input

Symbols have
NAND
their
gate if

(r0 15
 usual neaning.
Assume any necessary symbolic parameters required to estimate
the delay. 5+10 =15

a) with
What are 1/0 pads?
high drive strength?
Why the output pad of a chip should contain buffers

3+5-8
Derive that the minimum possible de.ay of an N-stage path with path effort

F and path parasitic delay P is D =NFl/N =+P 15

c) What is pass transistor? 2

0 22 2.22.2155
6. )The sheet resistance of
the total resistance
a0,22
the wire
ym thick Cu wire in a 65 nm
mm
process 0 Find
if
is 0.125um wide and 1 long. Ignore the
barrier layer and dishing. (ii) A 10x unit-sized inverter drives a 2x inverter at
the end of the 1
mm wire. Suppose that wire capacitance is 0.2 F/n and
that unit-sized nMOS transistor has R 10 k2 and C=0.1 fF. Estimate the

propagation delay using the Elmore delay model; neglect diffusion capacitance.

5+5-10

b) Perive the expression for energy per unit length to send a bit in terms of
wife and repeater capacitances. 15

PeCrtPinv)
Pw

-Pa
 Shahjalal University of Science and Technology
Department of Electrical and Electronic Engineering
4h
year 1" Semester Final Examination 2020
Course Code: EEE 443 Time: 2 hours
Course Title: Power PlantEngineering Total Marks: 100
Answer any two questions from each part

Part A
. a) Electrical Energy is superior to all other forms of energy. Justify the statement.

b) Compare the sources of energy used for the

generation of electrical energy

Why type
pulverization
of pulvarizers.
is done in a coal fired power plant. Give description of any basic 1

d) is to a d.c. at the rate of 4200 The

Mechanicalenergy supplied generator J/s. generator 4
delivers 32-2 A at 120V.

(i) What is the percentage efficiency of the generator?

(in) How much energy is lost per minute of operation?

oaw the schematic

arrangement ofa steam power station showing the direction of 5
Steam, water, and gass
A steam power stätion spends
Tk. 30lakhs per annum for coal used in the station The
coal has a calorific value of 5000
kcal/kg and costs Tk. 300 per ton. If the station has
thermal efficiency of 33% and electrical efficiency of 90%,find the
average loadonthe
station

Derive thermal and ratio of a gas turbine

the relationship between efficiency pressure
power plant for Brayton cycle.

Why hydro-electric stations

have high transmission and distribution costs?

What plant.
isHydro-electric
power station? Draw the whole arrangement of a
Also, describe the purpose of a surge tank in it.
hydro-electric 12

Write short notes on Impulse turbine and reaction turbines 10

Part B
The The equipment in a power station costs Tk. 15, 60,000 and has a salvage value of Tk.

60,000 at
the end
of
25
years.
Determine the depreciated
end of 20 years on the following methods:
value of the equipment at the
12

i) Straight line method penstock

(ii)

(ii)
Diminishingvalue method
Sinking fund method at 5% compound interest annually. pi ye
)Discuss the advantages ofhigh load factor

load duration curve ofa system for the whole year of 8760 hours is as shown in
The
Fig.1. The system is supplied by two stations A and B having the following annual
costs:

Station A = Tk. (75,000 +80xKW +0.02xKWh)

Station
B=Tk. (50, 000+50 KW 0.03*KWh) +
Determine the installed capacity required for each station and for how many hours per
year peak load station should be operated to give the minimum cost per unit generated.

SP-
 50,000

Station B

Station A

8760 Hours

6
Fig.

5. a) What do you understand by tariff? Discuss the desirable characteristics of a tariff

b) A generating station has a maximum demand

of 75MW and a yearly load factor of 15
40%.Generating costs inclusive of station capitaneosts are
demand plus 4 Tk.60per annum per kw
paisa per kWh transmitted. The annual capital for transmission charges
system are Tk. 20, 00, 000 and for distribution
system Tk. 15, 00,000; the respective
diversity factor being 1.2 and The
1.25. of transmission
that of the distribution
efficiency system is
90% and
system inclusive of substation is 85%. Find the yearly cost
losses
per kW demand and cost per kWh supplied.

(i) at the substation

(ii) at the consumers

premises.
c) The following tariffs are offered:
A
i) Tk 200 fixed plus 5tk per unit
A flat rate of Tk 7.5
ii) per unit

Xt what consumption, the first tariff is economical?

Briefly describe the fabrication of nuclear fuel.

What the power output

is
of a92U reactor if it
takes 30days to use up 2 kg of fuel?
Given that
energy released per fission is 200MeV and Avogadro's number 6.023x =
10 per kilo mole.

Why nuclear power stations becoming

are

disadvantages of nuclear power station

very popular? Discuss the advantages & 13
 Shahjalal University of Science Technology &
Department of Electrical & Electronic Engineering
4th Year 1st Semester Final Examination 2020 -
Session: 2016-17
Course No: EEE 441
Course Title: Power Electronics
Credits: 3.0 Full Marks:100 Time: 2Hours
[Answeranyfourquestions taking twofrom each part)

PART A
Q1 a) Define Reverse recovery time of a diode.
b) Define holding current and latching current of thyristors. Explain the v-i characteristicsof

thyristors.

c) A voltage source of v(t) = 20 +100 cos(2r60t +60°) V is applied to a nonlinear load, 10

in a non-sinusoidal current which is
resulting expressed in Fourier series form as

i(t)
=3 +4cos(27t60t +30°) + 1.5 cos(4760t +45°) + 0.025 cos(6760t +75°)A
Determine (i) the power absorbed by the load, (i) the power factor ofthe load, ii)the distortion
factor of the load current, (iv)the total harmonic distortion of the load the crest factor
current,()
of the load current.

Q2 a) Draw the symbol and general structure of a TRIAC.

b) Draw the
circuitand output voltage waveform for a controlled single-phase rectifier with 12

resistive load. Derive the equation of the output rms voltage for the rectifier with detail

calculation.

A three-phase uncontrolled rectifier

is supplied by a 480V msline-to-line 60Hz source. The 9
RL load is a 100 Q resistor in series with a 1SmH inductor. Determine (1) the average andms
load currents, (ii) the average and rms diode currents, and (iii) the power factor.

Q3 a) Draw the half-cell vertical cross section and equivalent circuit model for an IGBT.

b) With proper alignment, draw the waveformofthe outpyr voltage v output curfent iand
voltage across theswitchef va for the following circuit
when delay angle, o=30° and
extinction angle, B=150°.

Vsw
 c)What is theoverdrive 2+6
having a
of ODF?
factor (ODF)for BJT? What are the limitations of
uga
d) With proper alignment, draw the input 5
and output voltage waveformsof a
singie-plas
cyclo-converter where input
frequency, f=50 Hz and output frequency, Jo=16.0/
hz

PART B Lmin
Q4 a) Derive the relation
between input voltage and output voltage of a buck-boost
typical
converter with
necessary diagram.
b) Draw the circuit
and the
diagram waveform of inductor 10
current,/diode current ánd
capacitor current for a typical boost
converter. Also derive the
relatienbetween inductor
current and diode current
from the waveforms.
c) Design a C'uk converter that has an
input of 12 V and is to have an
output of -18 V 9
supplying a 40 W load. Select theduty ratio/the inductor sizes such that the
changein
inductor currents nd more than
is
10 percent oftheaverage inductor currenty the output
ripple voltage is no more than I
percent, and the ripple voltage across Ci is no more than
5 percent.
Assume the 200KHz.
switching frequency is
vs DT
Q5
a) What are the
Ai
techniques for harmonic reduction in inverters? 4
b) Describe the unipolar
switching method for a full-bridge
single-phase inverter with the 12
sketch ofbridge voltages and output voltage.
c)The full-bridge inverter is used to produce a across a
60-Hzvoltage series RLload using
bipolar PWM. The dc input to the bridge is 100 V, the amplitude modulation ratio ma is 0.8,
and the frequency modulation ratio
msis 21.The load has a resistance of R =5 Q and series

inductance L=10 mH. Determine the

(i) amplitude of the 60-Hzcomponent of the
output
voltage and load current, (ii) the power absorbed by the load resistor, and (iii) the THD of the
load current.

NormalizedFourier Coefficients VJV for Bipolar PWM

3
n=1 1.00
10.90.8
0.807 0605 04030.2 0
0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10
n=m 0.60 0.71 0.82 0.92 1.01 1.08 1.15 1.20 1.24 1.27
n=mft2 0.32 0.27 0.22 0.17 0.13 0.09 0.06 0.03 0.02 0.00
a) Show the of a three-phase
diagram full converter drive for controlling a separately excited 6
de motor. Write the
equation of the armature
voltage and field voltage for it.

b) Explain the of three-phase

working full-wave voltage controllers and plot the phase and 11
line
voltages in the same axes.
)Forthe following ZVS resonant converter, Vs =5 V, Jo =3 A, Lr =1 uH, and Cr =0.01 8
uF.
Determine the output
voltage when fs =500 kHz. (il) Determine the switching frequency
such that the
output voltage is 2.5 V.

O- 00006-

D,
-KH
T
D,Z

Equations forZVSresonant converter:

o LC C ---
-( Zo

- cos[ool2 -1]} +12

 University of Science
Shahjalal
Technology &
of Electrical and Electronic Engineering
Department
1st Semester Final Examination,
4th
January 2021
year

Total Marks: 100 Time: 2 Hours

Course Code: EEE 459
Devices
Course Title: Compound Semicouductor and Heterojunction

Answer any two questions from each part.

Part A
de
a)Why
vices?
is

Discuss
lattice matching
the effect of strain and
of semiconductor important for heterostructured
critical thickness in epitaxial growth. How
a hetero-
solve the problem of significant lattice mismatch while forming
can you
device?
3+6+4)
junction
that needs to be used for a detector
b) Evaluate composition of Al,Ga-As
whose cutoff wavelength
is designed to be 0.7um Given that [6
E(x) =1.425 +1.247x( direct: x 0.45)

25 = 1.425 +1.247x +1.147(x

- 0.45)"( indirect: x > 0.45)

E (x)
= 1.9
+0.125x +0.143x
E(x) = 1.708 + 0.642x
in GaAs is different to that in Si? Which
Why the effective mass of electrons
c)
semiconductor has higher electron mobility?
4+2]
used to
wide bandgap P-type material
and a
are
2. a) A narrow bandgap n-type
the energy band
form a If they are straddling type, then draw
heterojunction.
before contact and after contact at thermal equi-
diagram of the heterojunction
for electric field annd
librium. With derive expression
necessary assumptions,

electrostatic potential in both regions. [4+4+4

Consider an n-Ino.sGao.2Asand P-GaP heterojunction
with doping concen-
b)
trations of 0.3 x 10"cm and 0.1 x 102 cmd respectively. Additional parameters

are given in the table below. 5+8

Draw the thermal energy band diagram with proper dimension.
i) equilibrium

ii) Determine AEc, AEy, Vi, Tn, Tp and W for this system and show them in

the energy band diagram.

Parameter n-InosGao.2As P- GaP

4.0 2.04
Electron Affinity (eV)
0.55 2.26
Bandgap (eV)

No (cm*) 0.137x 101s 0.186 x 1020

Conduction Band Density of States,

Valence Band Density of States, Ny (cms) 0.659 x 1019

0.123 x 1020

15.15 11.1
Dielectric constant

diode and barrier diode. Sketch energy-band

3/a) Compare pn junction Schottky
with an interfacial and interface
diagram of a metal-semiconductor junction layer

2 states.

b) What is effective mass?

c)
Draw Energy-band diagram of the following metal semiconductor junctions
and mention whether it is Ohmic or Shottky, if Schottky then also find the ideal
Shottky barrier height.
3+5

[12)

-W=FS
dE-ee ad
 i) Al on top of n-GaAs.
Cu on top of n-GaAs.
ii)

ii) Ag on top of p-GaAs.

Au of p-GaAs.
ii)
on top
and
Au have work functions 4.06 eV,4.98 eV, 4.74 eV,
Here, Al, Cu, Ag, and
4.07 eV and Bandgap of 1.519
of
respectively.
GaAs has electron affinity
5.47eV
eV.

Part B
N VPt (Ne ?,
BJT. Also
I.aDraw
derive
the equivalent

Vce(sat) from
the expression
circuit

this model.
of
for basic Ebers-Moll model as used

and current crowding effects

in

9
Explain with necessary figures high level injection be solved? 4+4+3]
can
in a BJT?. How the problem of current

c) Consider a uniformly doped

silicon
crowding
bipolar transistor with a metallurgical
TeTg P
base width of0.5 un and a base doping of Ng 101cm-s,
The punch-through
concentration
if
=
doping
is to
voltage
Determine
beVa =25.
the collector
5
dielectric constantof Stis 11.7.

mode and enhancement mode

a)
HEMT
Draw the band diagrams for a depletion
energy

showing the movement of

Fermi level with the application of gate voltage.
10
the of HBT over B.JT. Show that for an HBT, the ratio
advantages
Describe
of JnEand JpE can be expressed as 3+5
JnE NDE WE DnB (AE
JPE NAB W DE T
have their usual meaning.
Where the symbols
1 Consider an n-channel GaAs MESFET at T =300K with gold Schottky a

Assume the barrier is dBn= 0.89 V. The n-channel doping

barrier contact. height
Nd
Na =2 x 10 cm-3, Design the channel thickness suchthat Vr +0.25 = 7
is

of a single gate n-channel JFET

VT
6. a) Draw the channel space charge region profiles
and Va are pinch-off, gate, and
(where Vp, Vy,
for the

drain
following

voltages
operating

respectively)
regions:
8
/) V,> V,and
and
Va =OV
<
i) V,> Vp Va Va,sat

ii) Vg> Vp and Va Va,sat

iv) V,>V, and Va> Va,sat

of internal in an n-channel JFET. [10]

b) Derive the formula pinch-off voltage

c) Consider a GaAs n-channel pn JFET at T =300K with N. = 108cm3,

Na = 3 x 10 cm, = €, 13.1, and a = 0.70 um. Determine the forward-bias

gate voltage required to open a channel region that is 0.10 um thick with zero

drain voltage.
 Shahjalal University of Science and Technology, Syth

Departmentof Electrical and Electronic Engineering

4 Year 1" Semester Final Examination-2019
Session: 2016-17
Course No: EEE 421
Course Title: Solid State Devices

Total Marks: 100 Credit: 3.0 Total Time: 2Hours

Part A
(Answerany two of the following questions)

(a) i) Plot the graph of the Fermi probability function versus energy for different energy 2+6
temperatures.

i)Show that, the probability

of a state being occupied at an energy level equal to the

Fermienergy is half
Following data
forGallium Arsenide
at
room temperature are given: 12
Ne= 4.7x 10' cm
N7.0x10 cm
m,-0.067mo
m,==0.48mo
n 1.8x10° cm

Determine-

The probability
of an electron to occupy the lowestenergy state at the
conduction band of Gallium Arsenide when the Fermi energy
is 0.6 eV |
below the conduction band.
The thermal concentration of electrons and holes.

Repéat the calculation if the temperature is 1ž5 °C. 193

( Prove
that for a
given
semiconductor material at
aconstant temperature the intrinsic
carrier concentration (n,)is aconstant and independent of the Fermienergy.

(a) Explain
)i)
the following terms:

Complete ionization
Freeze out
(b) Differentiate between degenerate and nondegenerate semiconductors.
(c) Current is flowing through an extrinsic semiconductor placed in a magnetic field as 10

)
shown below.

ii)
What
What
is

is
the type of semiconductor?

the carrier concentration?

iii) What is the mobility?

B=500 Gauss
V, =15V
6.25 mVV
mAA
=2.0
10 cm
10 cm

10 cm
Figure: 2 (c)

(d) Why is the carrier mobility afunctionof the ionized impurity concentrations?

Answer the following questions in one line or less:

Show the ambipolar diffusion co-efficient for an extrinsic p-type
material is|
given by the minority carrier.

What
ii) The
is the difference

relative permittivity
between direct and
of Silicon and
indirect recombination?
Gallium Arsenide are 11.8 and 13.2

respectively. Which one has the

smaller dielectric relaxation
time constant?
iv) What do you understand by Quasi-Fermi level?

v)Why is electron drift velocity higher than hole drift velocity?

Consider a p-type is homogeneous and infinite in extent. Assume 10+5
semiconductor that
azero applied electric
field. For a one-dimensional crystal, assume that excess
carriers are beinggenerated at x=0only. The excess carriers being
generated atx=0
will begin diffusing in both the x
and +x directions.
 concentration as a function of x.
Calculate the steady-state excess carrier
will decay to of 35%
Find the distance where the excess concentration

its original value. with the

relaxation time constant for an n type semiconductor
(c) the dielectric
Calculate
following
Donor
parameter:

impurity
concentration N=10°em V
11.5
Relative permittivity of thesemiconductor,

Electron mobility, 1350cm/V-s

Part B
two of the following questions)
(Answer any

4 cases:
band of a pn junction for the following
Sketch the energy diagram
Thermal equilibrium
Forward bias
ii)

i) Reverse bias

) terms for pn junction diodes:

Define the following

Metallurgical junction
Built-in barrier
11) potential

iii) Space charge region cm" and

A silicon pn junction has a doping concentration of N,=l10 and N=10
Determine the
intrinsic carrier concentration of 1.5x10"cm°at room temperature.

following:

i) Thebuilt-in potentjal 7
width
ii) Space charge

ii) Electric field at the metallurgical region

(d) Write a short note on junction capacitance

for a
3+3
Briefly describe the following non-ideal effects BJT:
modulation.
Base width
Punch through breakdown.
Plot the minority concentration for Emitter, Base and Collector of an npn transistor
for the following cases:

i) Forward active mode

ii) Inverse active mode
iin) Saturation mode
and diffusion constant. Also. 6+5
Derive the Einstein relation relating the mobility

Discuss the significance of the Einstein relation.

6.

(a) Sketch the energy band diagram of the MOS capacitor with n-type substrate for-

Positive gate bias

(i)
(i) Moderate negative gate bias
(ii) A large negative gate bias

Alsodefine the threshold inversion point andshow it on thesketch.

an the
(b) Define metal-semiconductor work function difference. Derive equation of
metal-semiconductor work function difference
of
systemMOSwith p-type

semiconductor. Usenecessary energy band diagrams.

(C) Consider a MOS structure with a p-type substrate doped to N,=3x10 cm. Assume, 2+8
Oxide surface chargedensity and work function difference to be cm"and -1.13
10
V. respectively. The threshold voltage is VIN=+0.65 V.
i) Determine the mode of operation of the device. MOS
ii) Design the oxide thickness of this MOS system to yield the specified

threshold voltage.

Good Luck