SFH601

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Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A 1 6 B • Isolation test voltage (1.0 s), 5300 VRMS
• VCEsat 0.25 ( 0.4) V, IF = 10 mA, IC = 2.5 mA
C 2 5 C • Built to conform to VDE requirements
• Highest quality premium device
NC 3 4 E
• Long term stability
i179004-11
i179004-3 • Storage temperature, -55 ° to +150 °C
• Material categorization: for definitions of
DESCRIPTION compliance please see www.vishay.com/doc?99912
The SFH601 is an optocoupler with a gallium arsenide LED
emitter which is optically coupled with a silicon planar AGENCY APPROVALS
phototransistor detector. The component is packaged in a • UL1577, file no. E52744 system code H or J, double
plastic plug-in case 20 AB DIN 41866. protection
The coupler transmits signals between two electrically • DIN EN 60747-5-5 (VDE 0884-5) available with option 1
isolated circuits.
• CSA 93751
• BSI IEC 60950; IEC 60065

ORDERING INFORMATION
DIP Option 6
S F H 6 0 1 - # X 0 # #

PART NUMBER CTR PACKAGE OPTION

7.62 mm 10.16 mm
BIN
Option 7 Option 9

> 0.7 mm > 0.1 mm

AGENCY CERTIFIED/PACKAGE CTR (%)

UL, BSI, CSA 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 SFH601-1 SFH601-2 SFH601-3 SFH601-4
DIP-6, 400 mil, option 6 SFH601-1X006 SFH601-2X006 SFH601-3X006 SFH601-4X006
SMD-6, option 7 SFH601-1X007 SFH601-2X007T SFH601-3X007(T) SFH601-4X007(T)
SMD-6, option 9 SFH601-1X009T SFH601-2X009 SFH601-3X009 SFH601-4X009(T)
VDE, cUL, UL, BSI 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6, option 1 SFH601-1X001 SFH601-2X001 - SFH601-4X001
DIP-6, 400 mil, option 6 SFH601-1X016 - SFH601-3X016 SFH601-4X016
SMD-6, option 7 SFH601-1X017 SFH601-2X017(T) SFH601-3X017(T) -
SMD-6, option 9 - - SFH601-3X019(T) -
Note
• For additional information on the available options refer to option information.
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Rev. 1.6, 23-Jul-15 1 Document Number: 83663

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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 6 V
DC forward current IF 60 mA
Surge forward current t = 10 μs IFSM 2.5 A
Total power dissipation Pdiss 100 mW
OUTPUT
Collector emitter voltage VCEO 100 V
Emitter base voltage VEBO 7 V
IC 50 mA
Collector current
t = 1.0 ms IC 100 mA
Power dissipation Pdiss 150 mW
COUPLER
Storage temperature range Tstg -55 to +150 °C
Ambient temperature range Tamb -55 to +100 °C
Junction temperature Tj 100 °C
Max. 10 s, dip soldering:
Soldering temperature (1) Tsld 260 °C
distance to seating plane 1.5 mm
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF - 1.25 1.65 V
Breakdown voltage IR = 10 μA VBR 6 - - V
Reverse current VR = 6 V IR - 0.01 10 μA
Capacitance VF = 0 V, f = 1 MHz CO - 25 - pF
Thermal resistance Rthja - 750 - K/W
OUTPUT
Collector emitter capacitance f = 1 MHz, VCE = 5 V CCE - 6.8 - pF
Collector base capacitance f = 1 MHz, VCB = 5 V CCB - 8.5 - pF
Emitter base capacitance f = 1 MHz, VEB = 5 V CEB - 11 - pF
Thermal resistance Rthja - 500 - K/W
SFH601-1 ICEO - 2 50 nA
SFH601-2 ICEO - 2 50 nA
Collector emitter leakage current VCE =10 V
SFH601-3 ICEO - 5 100 nA
SFH601-4 ICEO - 5 100 nA
COUPLER
Saturation voltage collector emitter IF = 10 mA, IC = 2.5 mA VCEsat - 0.25 0.4 V
Capacitance (input to output) VI-O = 0, f = 1 MHz CIO - 0.6 - pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Rev. 1.6, 23-Jul-15 2 Document Number: 83663

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 SFH601
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CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
SFH601-1 CTR 40 - 80 %
SFH601-2 CTR 63 - 125 %
IF = 10 mA
SFH601-3 CTR 100 - 200 %
SFH601-4 CTR 160 - 320 %
IC/IF at VCE = 5.0 V
SFH601-1 CTR 13 30 - %
SFH601-2 CTR 22 45 - %
IF = 1 mA
SFH601-3 CTR 34 70 - %
SFH601-4 CTR 56 90 - %
Note
• Current transfer ratio and collector emitter leakage current by dash number.

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Current VCC = 5 V, RL = 75  IF - 10 - mA
Rise time VCC = 5 V, RL = 75  tr - 2 - μs
Fall time VCC = 5 V, RL = 75  tf - 2 - μs
Turn-on time VCC = 5 V, RL = 75  ton - 3 - μs
Turn-off time VCC = 5 V, RL = 75  toff - 2.3 - μs
SATURATED
SFH601-1 IF - 20 - mA
SFH601-2 IF - 10 - mA
Current
SFH601-3 IF - 10 - mA
SFH601-4 IF - 0.5 - mA
SFH601-1 tr - 2 - μs
SFH601-2 tr - 3 - μs
Rise time
SFH601-3 tr - 3 - μs
SFH601-4 tr - 4.6 - μs
SFH601-1 tf - 11 - μs
SFH601-2 tf - 14 - μs
Fall time
SFH601-3 tf - 14 - μs
SFH601-4 tf - 15 - μs
SFH601-1 ton - 3 - μs
SFH601-2 ton - 4.2 - μs
Turn-on time
SFH601-3 ton - 4.2 - μs
SFH601-4 ton - 6 - μs
SFH601-1 toff - 18 - μs
SFH601-2 toff - 23 - μs
Turn-off time
SFH601-3 toff - 23 - μs
SFH601-4 toff - 25 - μs

IF RL = 7 5 Ω IF 1kΩ
VCC = 5 V VCC = 5 V
IC

47 Ω 47 Ω
isfh601_02
isfh601_01

Fig. 1 - Linear Operation (without Saturation) Fig. 2 - Switching Operation (with Saturation)

Rev. 1.6, 23-Jul-15 3 Document Number: 83663

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SAFETY AND INSULATION RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Climatic classification According to IEC 68 part 1 55 / 100 / 21
Comparative tracking index CTI 175
Maximum rated withstanding isolation voltage t = 1 min VISO 4420 VRMS
Maximum transient isolation voltage VIOTM 8000 V
Maximum repetitive peak isolation voltage VIORM 890 V
VIO = 500 V, Tamb = 25 °C RIO 1012 
Isolation resistance
VIO = 500 V, Tamb = 100 °C RIO 1011 
Output safety power PSO 700 mW
Input safety current ISI 400 mA
Input safety temperature TSI 175 °C
Creepage distance Standard DIP-4 7 mm
Clearance distance Standard DIP-4 7 mm
Creepage distance 400 mil DIP-4 8 mm
Clearance distance 400 mil DIP-4 8 mm
Insulation thickness DTI  0.4 mm
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

103 103
DC (TA = 0 °C, VCE = 5.0 V)
(TA = - 25 ˚C, VCE = 5.0 V) Pulsmode
5 IC/IF = f (IF) 5 IC/IF = f (IF)
Pulse
4 4
3 3
(%)
(%)

2 2
102 102
IC
IC

IF
IF

1 1
5 5

100 100
10-1 5 100 5 101 2 5 5 2
10-1 100 101
isfh601_03 IF (mA) isfh601_04 IF (mA)

Fig. 3 - Current Transfer Ratio vs. Diode Current Fig. 4 - Current Transfer Ratio vs. Diode Current

Rev. 1.6, 23-Jul-15 4 Document Number: 83663

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103 103
DC DC
Pulsbetrieb Pulsbetrieb
5 Pulse 5 Pulse

4 4
VCE = 5.0 V)

(%)
3 3
(%)

IC/IF = f (IF)
2 2
102

IC
102

IF
IC
IF

1 1
5 5

(IF = 10 mA, VCE = 5.0 V)

IC/IF = f (T)

100 101
10-1 5 100 5 101 2 -25 0 25 50 °C 75
IF (mA)
isfh601_05 isfh601_08 TA(°C)

Fig. 5 - Current Transfer Ratio vs. Diode Current Fig. 8 - Current Transfer Ratio vs. Diode Current

103 30
DC TA = 50 °C, VCE = 5.0 V) DC
Pulsbetrieb IC/IF = f (IF) Pulsbetrieb
5 Pulse Pulse IB = 40 µA
4
20
3 IB = 30 µA
IC (mA)
(%)

2
102
1 IB = 20 µA
IC
IF

5 10 IC = f (VCE)
(IF = 0) IB = 10 µA
IB = 5 µA
IB = 2 µA
100 0
10-1 5 100 5 101 2 0 5 10 15
VCE
isfh601_06 IF (mA) isfh601_09

Fig. 6 - Current Transfer Ratio vs. Diode Current Fig. 9 - Transistor Characteristics

103 30
DC TA = 75 °C, VCE = 5.0 V) DC
Pulsbetrieb IC/IF = f (IF) Pulsbetrieb IF = ± 14 mA
5 Pulse Pulse

4 IF = ± 12 mA
(%)

3 IF = ± 10 mA
20
2
Ic (mA)
IC

102
IF

IC = f (VCE) IF = ± 8 mA
1
5 10 IF = ± 6 mA

IF = ± 4 mA

IF = ± 1 mA IF = ± 2 mA

100 0
10-1 5 100 5 101 2 0 5 10 15
IF (mA) VCE
isfh601_07 isfh601_10

Fig. 7 - Current Transfer Ratio vs. Diode Current Fig. 10 - Output Characteristics

Rev. 1.6, 23-Jul-15 5 Document Number: 83663

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1.2 1.0
0.9
25° VCEsat = f (IC)
50° 0.8
75° 0.7
1.1
0.6

VCEsat (V)
VF (V)

0.5 IF = 2 x IC
0.4
1.0
0.3
IF = 3 x IC
0.2
0.1
0.9 0
10- 1 100 101 102 100 101 102
isfh601_11 IF (mA) isfh601_14 IC (mA)

Fig. 11 - Forward Voltage Fig. 14 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-2

100 1.0
ICEO = f (V, T)
5 (IF = 0) VCEsat = f (IC)
IF = IC
VCE = 40 V 0.8
VCE = 10 V 0.7
10-1 VCE sat (V)
0.6
5
ICEO (µA)

0.5
0.4
10-2 0.3 IF = 2 x IC

5 IF = 3 x IC
0.2
0.1

10-3 0
-25 0 25 50 75 100 100 5 101 5 102
TA (°C) IC (mA)
isfh601_12 isfh601_15

Fig. 12 - Collector Emitter Off-state Current Fig. 15 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-3

1.0 1.0
0.9 VCEsat = f (IC)
VCEsat = f (IC)
0.8 0.8
0.7 IF = 3 x IC 0.7
VCEsat (V)

0.6 0.6 IF = IC
VCE sat (V)

0.5 0.5
0.4 0.4
0.3 0.3
IF = 2 x IC
0.2 0.2
IF = 3 x IC
0.1 0.1
0 0
100 101 102 100 5 101 5 102
IC (mA)
isfh601_13 IC (mA) isfh601_16

Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Fig. 16 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-1 Depth SFH601-4

Rev. 1.6, 23-Jul-15 6 Document Number: 83663

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104
D=0
0.005 tp
0.01 tp
0.02 D= IF
T
0.05 T
103 0.1
IF (mA)

102

0.2
0.5 D = parameter, IF = f(tp)
DC
101
10- 5 10- 4 10- 3 10- 2 10- 1 100 101
isfh601_17 tp (s)

Fig. 17 - Permissible Pulse Load

200
Ptot = f (TA)

150
Transistor
Ptot (mW)

100

Diode
50

0
0 25 50 75 100
isfh601_18 TA (°C)

Fig. 18 - Permissible Power Dissipation for Transistor and Diode

120
IF = f (TA)

90
IF (mA)

60

30

0
0 25 50 75 100
isfh601_19 TA (°C)

Fig. 19 - Permissible Forward Current Diode

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Rev. 1.6, 23-Jul-15 7 Document Number: 83663

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PACKAGE DIMENSIONS in inches (millimeters)
Pin one ID
3 2 1

6.4 ± 0.1

4 5 6 ISO method A

8.6 ± 0.1

7.62 typ.
1.2 ± 0.1
1 min.

3.555 ± 0.255

18°
4° typ.
0.8 min. 2.95 ± 0.5

0.85 ± 0.05 0.25 typ.

3° to 9°
0.5 ± 0.05
i178004 7.62 to 8.81

2.54 typ.

Option 6 Option 7 Option 9

10.36 9.53
9.96 7.62 typ. 10.03
7.8
7.4
7.62 ref.

0.7 4.6
4.1 0.102
0.249 0.30 typ.
8 min.
0.51
0.35 1.02
0.25 8.4 min. 15° max.
8 min.
10.16
10.92 10.3 max.

0.76 0.76

R0.25 R0.25
2.54 2.54
1.78 1.78
8 min. 1.52 8 min. 1.52
18450-16 11.05 11.05

Rev. 1.6, 23-Jul-15 8 Document Number: 83663

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DIP-6A
PACKAGE DIMENSIONS in inches (millimeters)

Pin one ID
3 2 1

6.4 ± 0.1

4 5 6 ISO method A

8.6 ± 0.1

7.62 typ.
1.2 ± 0.1
1 min.

3.555 ± 0.255

18°
4° typ.
0.8 min. 2.95 ± 0.5

0.85 ± 0.05 0.25 typ.

3° to 9°
0.5 ± 0.05
i178004 7.62 to 8.81

2.54 typ.

Note
The information in this document provides generic information but for specific information on a product the appropriate product datasheet
should be used.

Rev. 1.2, 24-Aug-15 1 Document Number: 83263

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Revision: 08-Feb-17 1 Document Number: 91000