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Experiment 11

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Zulqurnan Anjum
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17 views3 pages

Experiment 11

Uploaded by

Zulqurnan Anjum
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Experiment No.

11
FET - CS AMPLIFIER
AIM:
To Measure the Voltage gain of CS Amplifier.
APPARATUS:

S.No Name of the Apparatus Range Quantity


1 JFET (BFW-10) 1
2 Resistors 1KΩ, 3.3KΩ, 100KΩ 1
3 Capacitors 10µF 3
4 Bread Board 1
5 Regulated Power Supply (0-30)V DC 1
6 Function Generator (100-1M)Hz 1
7 CRO (100-20M)Hz 1
7 Connecting Wires As Required

THEORY:
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless (signals). The device can amplify analog or
digital signals. It can also switch DC or function as an oscillator. In the FET, current flows
along a semiconductor path called the channel. At one end of the channel, there is an electrode
called the source. At the other end of the channel, there is an electrode called the drain. The
physical diameter of the channel is fixed, but its effective electrical diameter can be varied by
the application of a voltage to a control electrode called the gate. Field-effect transistors exist in
two major classifications. These are known as the junction FET (JFET) and the metal-oxide-
semiconductor FET (MOSFET). The junction FET has a channel consisting of N-type
semiconductor (N-channel) or P-type semiconductor (P-channel) material; the gate is made of
the opposite semiconductor type. In P-type material, electric charges are carried mainly in the
form of electron deficiencies called holes. In N-type material, the charge carriers are primarily
electrons. In a JFET, the junction is the boundary between the channel and the gate. Normally,
this P-N junction is reverse-biased (a DC voltage is applied to it) so that no current flows
between the channel and the gate. However, under some conditions there is a small current
through the junction during part of the input signal cycle.
The FET has some advantages and some disadvantages relative to the bipolar transistor.
Field-effect transistors are preferred for weak-signal work, for example in wireless,
communications and broadcast receivers. They are also preferred in circuits and systems
requiring high impedance. The FET is not, in general, used for high-power amplification, such
as is required in large wireless communications and broadcast transmitters.
Field-effect transistors are fabricated onto silicon integrated circuit (IC) chips. A single
IC can contain many thousands of FETs, along with other components such as resistors,
capacitors, and diodes.

CIRCUIT DIAGRAM:

PROCEDURE:

1. Connect the circuit as per the circuit diagram.


2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the FET. This may lead
to damage the FET.
2. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
3. Make sure while selecting the source, gate and drain terminals of the FET.

RESULT: The Voltage gain of CS amplifier is measured.


1. The Voltage gain of CS Amplifier is .

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