Eluru College of Engineering & Technology Department of Electronics and Communication Engineering Vision - Mission - Peos
Eluru College of Engineering & Technology Department of Electronics and Communication Engineering Vision - Mission - Peos
Eluru College of Engineering & Technology Department of Electronics and Communication Engineering Vision - Mission - Peos
PEO’S :
The Graduates of ECE will be able to :
Name of the Program : B.Tech in Electronics & Communication Engineering Academic Year: 2023-
24 Year &Semester : III-II No of Credits : 3
Name of the Course : VLSI Design Code : R2032042
Section : A&B Regulation : R20
Course Area/Module : Core No of students registered : 132
Name of the Faculty : B.Durga Rao Designation: Asst. Professor
Course Syllabus
UNIT I
INTRODUCTIO NAND BASIC ELECTRICAL PROPERTIES OF MOS CIRCUITS: VLSI Design Flow,
Introduction to IC technology, Fabrication process: nMOS, pMOS and CMOS. Ids versus Vds Relationships,
Aspects of MOS transistor Threshold Voltage, MOS transistor Trans, Output Conductance and Figure of Merit.
nMOS Inverter, Pull-up to Pulldown Ratio for nMOS inverter driven by another nMOS inverter, and through one
or more pass transistors. Alternative forms of pull-up, The CMOS Inverter, Latch-up in CMOS circuits, Bi-
CMOS Inverter, Comparison between CMOS and BiCMOS technology, MOS Layers, Stick Diagrams, Design
Rules and Layout, Layout Diagrams for MOS circuits
UNIT II
BASIC CIRCUIT CONCEPTS: Sheet Resistance, Sheet Resistance concept applied to MOS transistors and
Inverters, Area Capacitance of Layers, Standard unit of capacitance, some area Capacitance Calculations, The
Delay Unit, Inverter Delays, driving large capacitive loads, Propagation Delays, Wiring Capacitances, Choice of
layers. SCALING OF MOS CIRCUITS: Scaling models and scaling factors, Scaling factors for device
parameters, Limitations of scaling, Limits due to sub threshold currents, Limits on logic levels and supply voltage
due to noise and current density. Switch logic, Gate logic.
UNIT III
BASIC BUILDING BLOCKS OF ANALOG IC DESIGN: Regions of operation of MOSFET, Modelling of
transistor, body bias effect, biasing styles, single stage amplifier with resistive load, single stage amplifier with
diode connected load, Common Source amplifier, Common Drain amplifier, Common Gate amplifier, current
sources and sinks.
.
UNIT IV
CMOS COMBINATIONAL AND SEQUENTIAL LOGIC CIRCUIT DESIGN:
Static CMOS Design: Complementary CMOS, Rationed Logic, Pass-Transistor Logic.
Dynamic CMOS Design: Dynamic Logic-Basic Principles, Speed and Power Dissipation of Dynamic
Logic, Issues in Dynamic Design, Cascading Dynamic Gates, Choosing a Logic Style, Gate Design in
the Ultra Deep-Submicron Era, Latch Versus Register, Latch based design, timing decimation,
positive feedback, in stability, Meta stability, multiplexer based latches, Master-Slave Based Edge
Triggered Register, clock to q delay, setup time, hold time, reduced clock load master slave registers,
Clocked CMOS register. Cross coupled NAND and NOR, SR Master Slave register, Storage
mechanism, pipelining.
UNIT V
FPGA DESIGN: FPGA design flow, Basic FPGA architecture, FPGA Technologies, Introduction to FPGA
Families.
INTRODUCTIONTOADVANCEDTECHNOLOGIES: Giga-scale dilemma, Short channel effects, High–k,
Metal Gate Technology, Fin-FET, TFET.
Textbooks:
1. Essentials of VLSI Circuits and Systems – Kamran Eshraghian, Douglas and A.Pucknell and Sholeh
Eshraghian, Prentice-Hall of India Private Limited, 2005 Edition.
2. Design of Analog CMOS Integrated Circuits by Behzad Razavi, McGraw Hill, 2003
3. Digital Integrated Circuits, Jan M.Rabaey, Anantha Chandrakasan and Borivoje Nikolic, 2nd
edition, 2016.
REFERENCE BOOKS:
1. “Introduction to VLSI Circuits and Systems”, John P.Uyemura, John Wiley&Sons, reprint 2009.
2. Integrated Nano electronics: Nano scale CMOS, Post-CMOS and Allied Nano technologies Vinod
Kumar Khanna, Springer India, 1stedition, 2016.
3. Fin-FETs and other multi-gate transistors, Colinge JP, Editor NewYork, Springer, 2008.
COURSE OBJECTIVES
COURSE OUTCOME
At the end of the Course/Subject, the students will be able to :
CO Bloom's Taxonomy
Course Outcomes(COs) POS* PSOs*
Number & Level
Understand the basic electrical
properties of MOS circuits, Understanding
R2032042.1 including Ids vs. Vds relationships, 1 1,2
(BTL2)
threshold voltage, and output
Calculate sheet resistance and area
R2032042.2 capacitance for MOS transistors 1 1,2 Applying(BTL3)
and inverters.
Course Out
PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12
Come
R2032042.1 3 - - - - - - - - - - -
R2032042.2 3 - - - - - - - - - - -
- 3 - - - - - - - - - -
R2032042.3
R2032042.4 - 3 - - - - - - - - - -
R2032042.5 - 3 - - - - - - - - - -
Total 3 9 - - - - - - - - - -
Average 3 3 - - - - - - - - - -
1. Lecture
2. Questioning & Discussion
Handouts:
Lecture Notes
Assessment Methodologies-Direct
🞜 Assignments
🞜 Tests/Model exams
🞜 Univ. Examination
INTERNAL EXTERNAL
Set Target %
55 45
50% or less number of 50% or less number of
students scoring more than students scoring more than
Attainment Level 1
55% marks in internal 45% marks in External
examination examination
51% to 69% of students 51% to 69% of students
Attainment Level 2 scoring more than 55% marks scoring more than 45% marks
in internal examination in External examination
70% & above number of 70% & above number of
students scoring more than students scoring more than
Attainment Level 3
55% marks in internal 45% marks in External
examination examination
STAFF B.Durga
NAME Rao SUB: VLSI
DAY 1 2 3 4 5 6
MON IIIA
WED IIIB
SAT