Memristive circuits simulate memcapacitors voltage-controlled memristive systems.

In our experiments, the memris-

and meminductors tance RM is governed by an activation-type model [5, 6] defined by RM
¼ x with
Y.V. Pershin and M. Di Ventra ẋ = (bVM + 0.5(a − b) [|VM + VT | − |VM − VT |])
(1)
Electronic circuits with memristors (resistors with memory) that
× u (x − Rmin ) u (Rmax − x)
operate as memcapacitors (capacitors with memory) and meminductors
where VM is the voltage across the memristor, and u(.) is the step func-
(inductors with memory) are proposed. Using a memristor emulator,
the suggested circuits have been built and their operation has been tion. We choose for this work the following parameters a ¼ 0, b ¼
demonstrated, showing a useful and interesting connection between 62 kV/V s (used in the memcapacitor emulator), b ¼ 1 MV/V s
the three memory elements. (used in the meminductor emulator), VT ¼ 1 V, Rmin ¼ 5 kV and
Rmax ¼ 10 kV.
The memcapacitor emulator consists of this memristor M, a capacitor
Introduction: Memcapacitive and meminductive systems are two
C1 and a resistor R connected to an operational amplifier A1 , as shown in
recently postulated classes of circuit elements with memory [1] that
Fig. 1b. Since the operational amplifier keeps nearly equal voltages at its
complement the class of memristive systems [2, 3]. Their main charac-
positive and negative inputs, the voltage on the capacitor C1 is applied to
teristic is a hysteretic loop – which may or may not pass through the
the right terminal of R. Therefore, we can think that an effective capaci-
origin [1] – in their constitutive variables (charge– voltage for memca-
tor with a time-dependent capacitance C(t) is connected to the right
pacitors and current – flux for meminductors) when driven by a periodic
terminal of R, so that the relation RC(t) ¼ RM (t)C1 holds. (Note that
input, and, unlike memristors, they can store energy. To date, a few
the voltage at the capacitor VC is equivalent to the voltage, V2 , at the
systems have been found to operate as memcapacitors and meminduc-
negative terminal of the operational amplifier.) This allows us to deter-
tors (see [1] and References therein). However, these are neither avail-
mine the capacitance as C(t) ¼ RM(t)C1/R ¼ (Vin 2 V2)/(RdV2/dt)
able on the market yet, nor can their properties be easily tuned to
since RM(t) ¼ (Vin 2 V2)/I ¼ (Vin 2 V2)/(C1dV2/dt). In the limit
investigate their role in more complex circuits. The same can be said
R ≪ RM , we obtain the approximate equivalent circuit shown on the
about memristive systems. Therefore, electronic emulators of such
right of Fig. 1b. On the other hand, the meminductor emulator is
memory elements that could be easily built and tuned would be
similar to the design of a gyrator with a memristor replacing a resistor,
highly desirable. We have previously designed and built a memristor
and the equivalent inductance L(t) ¼ RRM(t)C1 , as is evident from
emulator and shown its use in neuromorphic and programmable ana-
Fig. 1c. In both cases, the time dependence of the equivalent capaci-
logue circuits [4, 5]. In this Letter, we use such a memristor emulator
tance, C, and inductance, L, is due to the time dependence of RM.
to design and build memcapacitor and meminductor emulators, and
To prove that these circuits emulate the behaviour of memcapacitors
prove experimentally their main properties. Since all these emulators
and meminductors, we have analysed their response under the appli-
can be built from inexpensive off-the-shelf components we expect
cation of a square-wave signal. This is shown in Fig. 2, where in
them to be extremely useful in the design, understanding and simu-
Fig. 2a we show both the input voltage Vin and the voltage at the nega-
lations of complex circuits with memory.
tive terminal of the operational amplifier V2 , and in Fig. 2b the equiv-
alent capacitance of the memcapacitor emulator at two values of
frequency of the square-wave signal. Clear hysteresis loops are visible
A VIN+
in the capacitance as a function of the voltage at the capacitor VC ¼
W
ADC V2. We also note that the capacitance hysteresis is frequency dependent:
B VIN– = the loop is much smaller at the higher frequency of 8 Hz. This is a mani-
festation of a typical property of memory circuit elements [1] that at high
M
frequencies behave as linear elements. The fluctuations of C in Fig. 2b
microcontroller are related to the limited resolution of our data acquisition system and
some noise in the circuit.
a
300
R 2

– R
A1 250
ω = 4Hz
+ = 1
ω = 8Hz
M
voltage, V

C1 200
C ( mF )

C(t ) =
RM (t)C1/R 0

b 150
–1 V–
R

100
– R
C1 A1 –2 Vin ω = 8Hz
=
+
0 0.25 0.50 –1 0 1
M time, s VC, V

L(t) = a b
RRM (t)C1

Fig. 2 Memcapacitor emulator response to square-wave signal

c Circuit used shown in Fig. 1b with R ¼ 480 V and C1 ¼ 10 mF
a Time-dependence of input voltage signal Vin and voltage at negative input of
Fig. 1 Circuits simulating (Fig. 1a) memristor, (Fig. 1b) memcapacitor and operational amplifier A1
(Fig. 1c) meminductor b Equivalent capacitance C(t) numerically extracted from Vin and V2 signals as
described in text
Approximate equivalent circuits shown on right
Similar considerations apply to the meminductor emulator as shown
Proposed circuits: The proposed circuits of the memcapacitor and in Fig. 3. Here, it is clearly seen that the shape of the V2 signal
meminductor emulators are shown in Figs. 1b and c, respectively, (which in this case is equal to the voltage on the equivalent inductor
together with the memristor emulator in Fig. 1a. The memristor emulator VL) depends on the polarity of applied voltage. We extracted numerically
is implemented as in [4, 5] and consists of a digital potentiometer, the the equivalent inductance L from the Vin and V2 signals and found that it
resistance of which is continuously updated by a microcontroller and contains a considerable amount of noise. A less noisy estimation of
determined by preprogrammed equations of current-controlled or equivalent inductance is obtained using a fit of the V2 signal by

ELECTRONICS LETTERS 1st April 2010 Vol. 46 No. 7

exponentially decaying curves as demonstrated in Fig. 3a giving a decay Memcapacitor and meminductor emulators have been designed and
time t ¼ L/R, from which we have extracted L. Since the memristor built using the previously suggested memristor emulator [4, 5] since
emulator state in the meminductor emulator changes quickly (its solid-state memristors are not available yet. These emulators can be
parameters are given below (equation (1))), the equivalent inductance created from inexpensive off-the-shelf components, and as such they
L switches between two limiting values, as shown schematically in provide powerful tools to understand the different functionalities of
Fig. 3b. these newly suggested memory elements without the need of expensive
material fabrication facilities. We thus expect they will be of use in
3 diverse areas ranging from non-volatile memory applications to neuro-
45 morphic circuits.
2

1 40 Acknowledgment: This work has been partially funded by NSF grant

no. DMR-0802830.
0
voltage, V

35

L, H
–1 # The Institution of Engineering and Technology 2010
30 9 October 2009
–2
doi: 10.1049/el.2010.2830
–3 25 One or more of the Figures in this Letter are available in colour online.
Vin; exp(–(t–0.17)*11)
–4 V– exp(–(t–0.36)*20) Y.V. Pershin (Department of Physics and Astronomy and USC
20 Nanocenter, University of South Carolina, Columbia, SC 29208, USA)
0 0.2 0.4 0.6 0.8 1.0 –2 0 2
time, s VL, V E-mail: [email protected]

a b
M. Di Ventra (Department of Physics, University of California, San
Diego, La Jolla, CA 92093-0319, USA)
Fig. 3 Meminductor emulator (Fig. 1c with R ¼ 480 V and C1 ¼ 10 mF)
response to square-wave signal References
a Time-dependence of input voltage signal Vin and voltage V2 ¼ VL at negative 1 Di Ventra, M., Pershin, Y.V., and Chua, L.O.: ‘Circuit elements with
input of operational amplifier A1
memory: memristors, memcapacitors and meminductors’, Proc. IEEE,
b Schematic of meminductor hysteresis loop drawn with inductance L obtained
using exponential fits to V2 signals, as shown in a 2009, 97, pp. 1717– 1724
2 Chua, L.O., and Kang, S.M.: ‘Memristive devices and systems’, Proc.
IEEE, 1976, 64, (2), pp. 209 –223
Finally, we mention that, although the suggested emulators reproduce 3 Chua, L.O.: ‘Memristor – the missing circuit element’, IEEE Trans.
the essential features of real memcapacitors and meminductors, certain Circuit Theory, 1971, 18, (5), pp. 507–519
aspects are different. In particular, the designed emulators are active 4 Pershin, Y.V., and Di Ventra, M.: ‘Experimental demonstration of
devices requiring a power source for their operation. More importantly, associative memory with memristive neural networks’,
these emulators do not actually store energy, which might be a limitation arXiv:0905.2935, 2009
in specific applications. However, from the point of view of circuit 5 Pershin, Y.V., and Di Ventra, M.: ‘Practical approach to programmable
response, almost any kind of memcapacitor and meminductor operation analog circuits with memristors’, IEEE Trans. Circuits Syst. 1, 2010,
model can be realised using an appropriate memristor-emulator opera- available online, arxiv: 0903.3162
tion algorithm. 6 Pershin, Y.V., La Fontaine, S., and Di Ventra, M.: ‘Memristive model of
amoeba’s learning’, Phys. Rev. E, 2009, 80, p. 021926
Conclusions: We have demonstrated that simple circuits with memris-
tors can exhibit both memcapacitive and meminductive behaviour.

ELECTRONICS LETTERS 1st April 2010 Vol. 46 No. 7