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Power Electronics Lab 2

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57 views11 pages

Power Electronics Lab 2

Uploaded by

omarabdelmaksod2019
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Report 2 Power

Electronis (2)
Program :senior 1 EPM

Course Name:Power
electronics (2)
Student Name:
Mohamed Ahmed Desouky 1901435
Mohamed Mahmoud Hussien 1901431
Omar Abdelmaksoud Hamed 1901027
Ahmed Saaed Abdelwahab 1901291
Mohamed sameh yahia 1900157
Electrical Power and
Machines Department Level 3
Experiments for:
Power Electronics II – EPM
352s

No. Experiment
Title
2. DC to DC boost converter and a driving
circuit of power MOSFETs

Course Coordinator: Prof. Mostafa I. Marei

Course Committee

Prof.

HusseinMashaly

Prof.

Mostafa I. Marei
Experiment # 2
DC to DC boost converter and a driving circuit of power
MOSFETs

1. Objectives:
The objectives of this experiment are:

1) To observe the output voltage and current of a boost converter.


2) To verify the relation between duty cycle and the output voltage.
3) To understand the functions of the driving circuit for power MOSFETs.
4) Study and simulate the effect of driving circuit parameters on the turn-on and
turn-off times.

2. Dc to Dc boost converter:

It consists of dc input voltage source VS, boost inductor L, controlled switch S, diode D,
filter capacitor C, and load resistance R. The converter waveforms in the CCM are shown
in figure below. When the switch S is in the on state, the current in the boost inductor
increases linearly and the diode D is off at that time. When the switch S is turned off, the
energy stored in the inductor is released through the diode to the output RC circuit.
Vs DT = (Vo -Vs) (1 - D)T
The output voltage and current are:
Vo = Vs / (1-D)
Io = Is * (1-D)

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Fig. 2 Waveforms of coil voltage, coil current, supply current, and capacitor current.

3. The experiment procedures:


1) Connect the dc- dc converter module as boost converter with R load.
2) Change the converter duty cycle and observe the output voltage and current.
3) Change the converter frequency and observe the output voltage and current.

4. The Driving circuit:


The driving circuit should be able to fire the gate terminal of the power MOSFET. The
signal generated by the control circuit (microcontroller) is small (5V max.) comparing
to the signal needed by the MOSFET switch. One of the widely used schemes to
generate the gating signal for power MOSFETs is based on using the opto-isolator
(opto-coupler).

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4.1 Optocoupler

In electronics, an optocoupler or (optical isolator, opto-isolator, photocoupler, or


photoMOS) is a device that uses a short optical transmission path to transfer a signal
between elements of a circuit, typically a transmitter and a receiver, while keeping
them electrically isolated.
A common implementation involves a LED and a phototransistor, separated so
that light may travel across a barrier but electrical current may not as shown in Fig.
3. When an electrical signal is applied to the input of the opto-isolator, its LED lights,
its light sensor then activates, and a corresponding electrical signal is generated at
the output. Unlike a transformer, the opto-isolator allows for DC coupling and
generally provides significant protection from serious overvoltage conditions in one
circuit affecting the other.
With a photodiode as the detector, the output current is proportional to the amount
of incident light supplied by the emitter. The optical path may be air or a dielectric
waveguide. The photosensor may be a photocell, phototransistor, or an optically
triggered SCR or Triac. Occasionally, this device will in turn operate a power relay or
contactor. The transmitting and receiving elements of an optical isolator are
contained within a single compact module for mounting on a circuit board. In this
case, the module is often called an optoisolator or opto-isolator.

Fig. 3 Optocoupler (LED at the input and Phototransistor at the output stages)

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Using the optocoupler results in:
1) Isolating the driving signal from the microcontroller. This might be
mandatory for some power electronics converters including more than
one switch. Also, this make safe to work with microcontroller circuit as
it is isolated from the power circuit.

2) Magnify the gate voltage level to the level of the power supply used
at the output stage of the optocoupler (normally 15V). with 15V,
the gate of the

MOSFET can be turned-on as it is higher than the threshold voltage (VT

is between 4V to 6V).

4.2 Driving Circuit Components


Fig. 4 illustrates a simple MOSET driving circuit based on optocoupler.
The PWM signal is obtained either from analog or digital (microcontroller
MC) circuit. The basic components used for the driving circuit are:
1) An opto-coupler (4N35): to isolate the control circuit from the power
circuit to convert the 5V signal from the Microcontroller to 15V at
the gate terminal of the MOSFET.

2) Variable resistance R1 controls the rising time of the gate signal.

3) Variable resistance R2 controls the falling time of the gate signal and
the output voltage.

4) The NOT gate: it is optional and used as a buffer to prevent loading


effect on microcontroller (M). It is used when the microcontroller is
connected to many driver circuits. Do not use in this test.

The input to the driving circuit is a square pulse of 5V level to control the
MOSFET with any duty ratio and frequency < 10Hz. This square pulse may be
generated from a microcontroller (MC) or a function generator.

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Fig. 4 The Driving circuit of power MOSFET.

Note: referring to the Data sheet of the 4N35 optocoupler, the pin assignments
is shown in Fig. 5.

Fig. 5 Pin assignments of 4N35. Do not use pins 3 and 6.

4.3 Tasks
Each group is required to construct the driving circuit shown in Fig. 4 by using a
simulation program (Proteus) or on a bread board to observe the input square
signal form the microcontroller at Channel A and the gate signal at Channel B of
the scope. The following results are required:

1) Vary R1 to 300 and 400 , and observe its effect on the rise
time of the gate signal.

2) Vary R2 to 1K and 4.7K , and observe its effect on the fall


time of the gate signal.
3) Download the datasheet of TLP250 optocoupler and discuss why
it is superior compared to 4N35 optocoupler ?

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As we can see the Volt inc. Till certain point and Dec. till it reach to 0 Due to the intimal
resistance
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