2N6050
SILICON PNP POWER DARLINGTON TRANSISTOR
■ SGS-THOMSON PREFERRED SALESTYPE
■ PNP DARLINGTON
■ HIGH GAIN
■ HIGH CURRENT
■ HIGH DISSIPATION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
1
■ LINEAR AND SWITCHING INDUSTRIAL 2
EQUIPMENT
DESCRIPTION TO-3
The 2N6050 is a silicon epitaxial-base PNP
transistors in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 KΩ R2 Typ. = 55 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) -60 V
V CEX Collector-Emitter Voltage (V BE = -1.5V) -60 V
V CEO Collector-Emitter Voltage (I B = 0) -60 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -12 A
I CM Collector Peak Current -20 A
IB Base Current -0.2 A
P tot Total Dissipation at T c ≤ 25 C
o
150 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
June 1997 1/4
2N6050
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 3.12 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 83.3 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEX Collector Cut-off V CE = rated V CEO 0.1 mA
Current (V BE = -1.5V) V CE = rated V CEO T c = 125 o C 0.5 mA
I CBO Collector Cut-off V CE = rated V CBO 0.1 mA
Current (I E = 0)
I CEO Collector Cut-off V CE = rated V CEO 0.1 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus) ∗ Collector-Emitter I C = 100 mA 80 V
Sustaining Voltage
V CE(sat) ∗ Collector-Emitter IC = 2 A I B = 8 mA 2 V
Saturation Voltage IC = 4 A I B = 40 mA 3 V
V BE(sat) ∗ Base-Emitter IC = 4 A I B = 40 mA 4 V
Saturation Voltage
V BE ∗ Base-Emitter Voltage IC = 2 A V CE = 3 V 2.8 V
h FE ∗ DC Current Gain I C = 0.5 A VCE = 3 V 500
IC = 2 A V CE = 3 V 750 15000
IC = 4 A V CE = 3 V 100
hfe Small Signal Current I C = 0.75 A V CE = 10 V f = 1KHz 25
Gain
C CBO Collector Base IE = 0 V CB = 10 V f = 1MHz
Capacitance for NPN types 100 pF
for PNP types 200 pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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2N6050
TO-3 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
A D
P
G C E
U
B
O
N
R
P003F
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2N6050
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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