2N5551- MMBT5551 NPN General Purpose Amplifier

April 2006

2N5551- MMBT5551
NPN General Purpose Amplifier
Features
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)

tm

2N5551
3

MMBT5551

TO-92
1 SOT-23 Marking: 3S

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings * T

Symbol
VCEO VCBO VEBO IC TJ, Tstg
NOTES:

= 25C unless otherwise noted

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature

Value
160 180 6.0 600 -55 ~ +150

Units
V V V mA C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T =25C unless otherwise noted

a

Symbol
PD RJA RJA

Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max 2N5551
625 5.0 83.3 200 357

*MMBT5551
350 2.8

Units
mW mW/C C/W C/W

* Device mounted on FR-4 PCB 1.6" 1.6" 0.06."

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2N5551- MMBT5551 Rev. B

2N5551- MMBT5551 NPN General Purpose Amplifier

Electrical Characteristics
Symbol
Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE

Ta = 25C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current

Test Condition
IC = 1.0mA, IB = 0 IC = 100A, IE = 0 IE = 10uA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VBE = 0.5V, IC = 0, f = 1.0MHz IC = 1.0 mA, VCE = 10 V, f = 1.0kHz IC = 250 uA, VCE = 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz

Min.
160 180 6.0

Max.

Units
V V V

50 50 50

nA A nA

On Characteristics DC Current Gain 80 80 30 250 0.15 0.20 1.0 1.0 V V V V

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

Small Signal Characteristics fT Cobo Cibo Hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure 100 300 6.0 20 50 250 8.0 dB MHz pF pF

Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)

2 2N5551- MMBT5551 Rev. B

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2N5551- MMBT5551 NPN General Purpose Amplifier

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs Collector Current
hFE - TYPICAL PULSED CURRENT GAIN
250

Figure 2. Collector-Emitter Saturation Voltage vs Collector Current

VCESAT - COLLECTOR EMITTER VOLTAGE (V)
0.5

200

125 C

0.4

= 10

150

0.3

25 C

25 C

100

0.2

-40 C
50

125 C

VCE = 5V

0.1

- 40 C
1 10 100

0 0.1

0.2

0.5

10

20

50

100

0.0

IC - COLLECTOR CURRENT (mA)

IC - COLLECTOR CURRENT (mA)

Figure 3. Base-Emitter Saturation Voltage vs Collector Current

1.0

Figure 4. Base-Emitter On Voltage vs Collector Current

VBEON - BASE EMITTER ON VOLTAGE (V)
1.0

VBESAT - BASE EMITTER VOLTAGE (V)

= 10
0.8

- 40 C

- 40 C

0.8

25 C
0.6

125 C
0.4

0.6

25 C 125 C
o

0.4

0.2

0.2

VCE = 5V
1 10 100

0.0 1 10 100 200

0.0 0.1

IC - COLLECTOR CURRENT (mA)

IC - COLLECTOR CURRENT (mA)

Figure 5. Collector Cutoff Current vs Ambient Temperature

I CBO- COLLE CTOR CURRENT (nA) 50 VCB = 100V

Figure 6. Input and Output Capacitance vs Reverse Voltage

30

f = 1.0 MHz
25

CAPACITANCE (pF)

20

10

15

10

C ib C cb
1 10 100

1 25

50 75 100 TA - AMBIE NT TEMP ERATURE ( C)

125

0 0.1

V CE - COLLECTOR VOLTAGE (V)

3 2N5551- MMBT5551 Rev. B

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2N5551- MMBT5551 NPN General Purpose Amplifier

Typical Performance Characteristics

(Continued)

Figure 7. Collector- Emitter Breakdown Voltage with Resistance Between Emitter-Base

BV CER - BREAKDOWN VOLTAGE (V)

Figure 8. Small Signal Current Gain vs Collector Current

h FE - SMALL SIGNAL CURRENT GAIN

Between Emitter-Base
260

vs Collector Current
16
FREG = 20 MHz V CE = 10V

I C = 1.0 mA
240

12

220

200

180

160 0.1

10

100

1000

RESISTANCE (k )

10 I C - COLLECTOR CURRENT (mA)

50

Figure 9. Power Dissipation vs Ambient Temperature

700

PD - POWER DISSIPATION (mW)

600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23 TO-92

4 2N5551- MMBT5551 Rev. B

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2N5551- MMBT5551 NPN General Purpose Amplifier

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. I19

5 2N5551- MMBT5551 Rev. B

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