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EE3020 Design Laboratory 3 – MOSFETs and BJTs

Dayne, Bauer

Abstract—This document covers the design, testing, and

analysis of two circuits; a common-source amplifier and a
common-emitter amplifier in order to determine their respective
quiescent points (Q-points). The results garnered from testing
were relatively close to the anticipated outcomes with the only
issue being that the collectors and drain currents deviated slightly
from the desired value. The design for the common-source
amplifier followed specifications based on the drain current while
the common-emitter amplifier followed specifications on the
collector current. The cost of the project amounted to $1.79, and it
took 9 hours to complete when accounting for time designing,
constructing, testing, and documenting.

Index Terms—MOSFET, BJT, drain current, collector current,

saturation, forward bias, Q-point, common-emitter current gain.

I. INTRODUCTION Fig. 1. displays a common-source amplifier circuit with Q-

point (2.96 V, 5.1 mA)

T HIS project consists of the construction and testing for

a common-source amplifier and a common-emitter
amplifier circuit, it began with calculating the
component values required to achieve the desired drain and
Once the circuit in Fig. 1. has been constructed, build the
common-emitter amplifier shown below in Fig. 2.

collector currents for each respective circuit. In the case of the

common-source amplifier the specified drain current was 5.2
mA and it was to be assumed that the metal–oxide–
semiconductor field-effect transistor (MOSFET) was within the
saturation region meaning that (1) and (2) must be used to
determine values for each resistor. The common-emitter
amplifier had a specified collector current of 5.2 mA and the
bipolar junction transistor (BJT) was to be assumed to be
forward active meaning the base-to-emitter voltage is 0.7 V and
the common-emitter current gain is 100 A/A. After (1) – (11)
were used to calculate component values it was determined that
the common-source amplifier would need two 680Ω resistors, a
30kΩ resistor, and a 47kΩ resistor to meet the specified drain
current whereas the common-emitter amplifier required two 560Ω
resistors, a 1kΩ resistor, and a 1.8kΩ resistor to meet Fig. 2. Displays a common-emitter amplifier circuit with Q-
specifications. point (2.775 V, 4.8 mA)

II. PROCEDURE In order to calculate all of the component values and determine
The design for each of the circuits created during this project Q-points the following equations were required:
was done so by hand calculation using predictive math solutions
1
as a starting point. The following circuits were then constructed. 𝐼𝐷 = 𝑘𝑛 (𝑉𝐺𝑆 − 𝑉𝑡𝑛 )2 (1)
2

𝑉𝐷𝑆 ≥ 𝑉𝐺𝑆 − 𝑉𝑡 (2)

𝑅𝐵2
∗ 𝑉𝑆𝑜𝑢𝑟𝑐𝑒 = 𝑉𝐺 (3)
𝑅𝐵1 +𝑅𝐵2

Paper was submitted to canvas March 27th ,2023. University of Wisconsin Platteville student. Current email is
[email protected]
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𝑉𝐺𝑆 = 𝑉𝐺 − 𝑉𝑆 (4)

𝑉𝐷𝑆 = 𝑉𝑆𝑜𝑢𝑟𝑐𝑒 − 𝑅𝑆 𝐼𝐷 − 𝑅𝐷 𝐼𝐷 (5)

𝐼𝐶
𝛽= (6)
𝐼𝐵
𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 (7)

𝑉𝐶𝐸 = 𝑅𝐶 𝐼𝐶 (8)

𝐼
𝑉𝐺𝑆2 −𝑉𝐺𝑆1 √ 𝐷2
𝐼𝐷1
𝑉𝑡 = 𝐼
(9)
1−√ 𝐷2
𝐼𝐷1

Fig. 3. Displays the drain-to-source voltage across the

1
𝐼𝐷2 = 𝑘𝑛 (𝑉𝐺𝑆2 − 𝑉𝑡 )2 (10) MOSFET and its value.
2

𝑉
𝑅= (11)
𝐼

For the circuit in Fig. 1. (1) – (5) and (9) – (11) were utilized to
determine the circuit and component values of the common-
source amplifier and the results are as follows: Vt = 2.173 V, kn
= 70.38 mA/V^2, VG = 6.09V, VGS = 2.554 V, VDS = 2.928 V, Fig. 4. Displays the collector-to-emitter voltage across the BJT
RD = 680 Ω, RS = 680 Ω, RB1 = 27k Ω, and RB2 = 47k Ω. and its value.
For the circuit in Fig. 2. (5) – (8) were utilized to determine the
circuit and component values of the common-emitter amplifier
and the results are as follows: VCE = 2.912 V, RD = 560 Ω, RS
= 560 Ω, RB1 = 1.8k Ω, and RB2 = 1k Ω.

III. EQUIPMENT/PARTS LIST

TABLE I
COST SUMMARY

Unit Description Quantity Unit Price Unit Total Part Number

($) [1] ($)
BS170 MOSFET 1 0.43 0.43 BS170 Fig. 5. Displays the current readout in milliamps for the circuit
2N3904 BJT 1 0.42 0.42 2N3904 in Fig. 1. on a digital multimeter.
680Ω Resistor 2 0.11 0.22 CFR-50JT-
52-680R
1.8 kΩ Resistor 1 0.10 0.10 CFR-25JR-
52-1K8
47 kΩ Resistor 1 0.11 0.11 CFR-50JB-
52-47K
30 kΩ Resistor 1 0.14 0.11 CFR-50JB-
52-30K
1 kΩ Resistor 1 0.10 0.10 CFR-25JR-
52-1K
560 Ω Resistor 2 0.15 0.30 CFR-50JT-
52-560R
Total 10 - 1.79

Fig. 6. Displays the current readout in milliamps for the circuit

IV. RESULTS in Fig. 2. on a digital multimeter.
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The Q-points can then be determined as (2.96 V, 5.1 mA) for

the common-source amplifier and (2.775 V, 4.8 mA) for the
common-emitter amplifier.

V. DISCUSSION
The laboratory results for both circuits came slightly off of
expectations with a 0.4 mA variation present in the common-
emitter amplifier and a 0.1 mA variation in the common-
source amplifier an attempt at error mitigation could have
been made by placing resistors in series or changing
resistances to non-standard values to more closely reach
desired currents however, this would violate specifications for
the project and thus those steps were not taken. Furthermore,
the calculated voltages for VCE and VDS were also slightly off
of their expected values. This is due to the current being
different than what was used in calculations.

VI. TIME ALLOCATION

Task Time Taken (Hours)
Design/Calculations 1.5
Construction 1
Testing 2
Report 4.5
Total 9

VII. CONCLUSION
This project had the purpose of familiarizing students with the
design and use of MOSFET and BJT amplifier circuits. The
knowledge gained will assist students in further use with
MOSFETs and BJTs.

VIII. REFERENCES
[1] Mouser (2023). Mouser Electronics, Available:
Electronic Components Distributor - Mouser Electronics
[2] Onsemi (2022, April). Field Effect Transistor, N-
Channel, Enhancement Mode, Available: MMBF170 - Field
Effect Transistor - N-Channel, Enhancement Mode
(onsemi.com)
[3] Onsemi (2021, August). General Purpose Transistors,
Available: 2N3903 - General Purpose Transistors
(onsemi.com)