KSC3074

KSC3074

High Power Switching

• Complement to KSA1244

1 I-PACK
1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 5 A
IB Base Current 1 A
PC Collector Dissipation (Ta=25°C) 1 W
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 50 V
ICBO Collector Cut-off Current VCB = 50V, IE = 0 1 µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 µA
hFE1 DC Current Gain VCE = 1V, IC = 1A 70 240
hFE2 VCE = 1V, IC = 3A 30
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB = 0.15A 0.5 V
VBE(sat) Base-Emitter Saturation Voltage IC= 3A, IB = 0.15A 0.9 1.2 V
fT Current Gain Bandwidth Product VCE = 4V, IC = 1A 120 MHz
Cob Output Capacitance VCB = 10V, f = 1MHz 80 pF
tON Turn ON Time VCC = 30V, IC= 3A 0.1 µs
tSTG Storage Time IB1= - I B2=0.15A 1 µs
RL = 10Ω
tF Fall Time 0.1 µs

hFE Classification
Classification O Y
hFE1 70 ~ 140 120 ~ 240

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSC3074
Typical Characteristics

8 1000
A A IB = 80mA
m
00 90m IB = 70mA VCE = 1V
1 IB=
7 I B= IB = 60mA
IC[A], COLLECTOR CURRENT

6 IB = 50mA

hFE, DC CURRENT GAIN

100
5
IB = 40mA

4 IB = 30mA

3 IB = 20mA
10

2
IB = 10mA
1

IB = 0
0 1
0 1 2 3 4 5 6 7 8 0.01 0.1 1 10

VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10

IC = 20 IB V CE = 1V
IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

1 VBE(sat)

0.1
V CE(sat)

0.01
0.01 0.1 1 10

VBE (sat), V CE(sat)[V], SATURATION VOLTAGE VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter on Voltage

Collector-Emitter Saturation Voltage

10 32

IC MAX. (Pulse)
1m

IC MAX. (DC) 28
10

s
m
D
C
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

s

24

1
20

16

12
0.1

8
VCEO MAX.

0.01 0
0.1 1 10 100 0 25 50 75 100 125 150 175

VCE [V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSC3074
Package Demensions

I-PAK
6.60 ±0.20 2.30 ±0.20
5.34 ±0.20
(0.50) (4.34) (0.50) 0.50 ±0.10
±0.20

±0.20

±0.20
0.60

0.70

6.10
±0.10

±0.30
0.80

16.10
±0.20

±0.30

MAX0.96
1.80

9.30

0.76 ±0.10

2.30TYP 2.30TYP 0.50 ±0.10

[2.30±0.20] [2.30±0.20]

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E