DEPARTMENT OF ELECTRICAL AND ELECTRONICS

ENGINEERING

OBSERVATION MANUAL

FOR

ANALOG ELECTRONICS CIRCUITS LABORATORY

B.TECH II YEAR I SEMESTER

Name of the Student :

Roll No :

Academic Year 20 – 20

VIGNAN INSTITUTE OF TECHNOLOGY AND SCIENCE

Vignan Hills, Deshmukhi Village, Near Ramoji Film City,
Pochampally (Mandal), Yadadri Bhuvanagiri (District)
Telangana State- 508284
Sponsored by
Lavu Educational Society
(Approved by AICTE and Affiliated to JNT University, Hyderabad)
 INSTITUTE LEVEL
VISION

"To evolve into a centre of excellence in Science & Technology through creative and innovative
practices in teaching-learning, promoting academic achievement & research excellence to
produce internationally accepted competitive and world class professionals who are
psychologically strong and emotionally balanced imbued with social consciousness and ethical
values.

MISSION

"To provide high quality academic programs, training activities, research facilities and
opportunities supported by continuous industry - institute interaction aimed at employability,
entrepreneurship, leadership and research aptitude among students and contribute to the
economic and technological development of the region, state and nation."

DEPARTMENT LEVEL

VISION

To become a centre of excellence in Electrical and Electronics Engineering Education which

produce competent engineers who can contribute for the socio-economic development of the
nation.

MISSION

 To impart a detailed understanding of the fundamentals of Electrical and Electronics

Engineering practice.
 To undertake projects and research activities in collaboration with national premier
institutions and R&D centers.
 To foster student with innovative designs and make them industry – ready with relevant
projects.
 To expose students to critical challenges and life-long learning in the broadest context of
upcoming technologies.
 PROGRAM EDUCATIONAL OBJECTIVES (PEOs):

PEO I: Graduate shall be able to apply fundamentals of science in emerging areas of Electrical and
Electronics Engineering, research, employability and handle the realistic problems with ethical values.

PEO2: Graduate of Electrical and Electronics Engineering shall have communication skills, sense of
responsibility to serve the society and protect the environment

PEO3: Graduate shall have habit of innovative thinking to pursue career in core areas of electrical and
electronics engineering.

PEO4: The graduates shall have strong foundation in academics, managerial skill, leadership qualities
and to be industry ready professionals with updated technologies and soft skill.

PROGRAM SPECIFIC OUTCOMES (PSOs)

PSO I: Ability to identify, formulate, design and investigate the solution for complex engineering
problems by applying knowledge acquired from electric circuits, electronic circuits, digital
electronics, control systems, electrical machines, power semi-conductor drives and Power systems.

PSO II: Apply modern engineering hardware, software tools and project management techniques
to design, develop and implement electrical, electronics and allied multi-disciplinary projects to
meet the demands of industry and to provide solutions to the real time engineering problems.

PSO III: To inculcate professional ethics, team work and entrepreneurial thinking to address
societal electrical issues with advanced engineering solution techniques.
 Programme Outcomes

PROGRAM OUTCOMES (POs)

Engineering Graduates will be able to:

PO1: Engineering knowledge: Apply the knowledge of mathematics, science, engineering

fundamentals, and an engineering specialization to the solution of complex engineering
problems.
PO2: Problem analysis: Identify, formulate review research literature and analyze complex
engineering problems reaching substantiated conclusions using first principle of
mathematics, natural science and engineering science.
PO3: Design/development of solutions: Design solutions for complex engineering problems
and design system components or processes that meet the specified needs with
appropriate consideration for the public health and safety, the cultural, societal, and
environmental considerations.
PO4: Conduct investigations of complex problems: Use research-based knowledge and
research methods including design of experiments, analysis and interpretation of data, and
synthesis of the information to provide valid conclusions.
PO5: Modern tool usage: Create, select, and apply appropriate techniques, resources, and
modern engineering and IT tools including prediction and modeling to complex engineering
activities with an understanding of the limitations.
PO6: The engineer and society: Apply reasoning informed by the contextual knowledge to
assess societal, health, safety, legal and cultural issues and the consequent responsibilities
relevant to the professional engineering practice.
PO7: Environment and sustainability: Understand the impact of the professional engineering
solutions in societal and environmental contexts, and demonstrate the knowledge of, and
need for sustainable development.
PO8: Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
PO9: Individual and team work: Function effectively as an individual, and as a member or
leader in diverse teams, and in multidisciplinary settings.
PO10: Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and
write effective reports and design documentation, make effective presentations, and give
and receive clear instructions.
PO11: Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one's own work, as a member
and leader in a team, to manage projects and in multidisciplinary environments.
PO12: Life-long learning: Recognize the need for, and have the preparation and ability to
engage in independent and life-long learning in the broadest context of technological
change.
 COURSE OBJECTIVES AND COURSE OUTCOMES

Prerequisite: Analog Electronics

Course Objectives:
 To introduce components such as diodes, BJTs and FETs their switching characteristics,
applications
 Learn the concepts of high frequency analysis of transistors.
 To give understanding of various types of basic and feedback amplifier circuits such as small
signal, cascaded, large signal and tuned amplifiers.
 To introduce the basic building blocks of linear integrated circuits.
 To introduce the concepts of waveform generation and introduce some special function ICs.

Course Outcomes:
At the end of this course, students will demonstrate the ability to
 Know the characteristics, utilization of various components.
 Understand the biasing techniques
 Design and analyze various rectifiers, small signal amplifier circuits.
 Design sinusoidal and non-sinusoidal oscillators.
 Design OP-AMP based circuits with linear integrated circuits

CO – PO Mapping

S. No Course Outcome PO/PSO

1 C207.1 Know the characteristics, utilization of various components.
2 C207.2 Understand the biasing techniques
Design and analyze various rectifiers, small signal amplifier
3 C207.3
circuits.
4 C207.4 Design sinusoidal and non-sinusoidal oscillators.
A thorough understanding, functioning of OP-AMP, design OP-
5 C207.5
AMP based circuits with linear integrated circuits.

PO1 PO PO PO PO PO PO PO PO PO1 PO1 PO1 PSO PSO POS

2 3 4 5 6 7 8 9 0 1 2 1 2 3
C207. 3 3 2 2 2
1
C207. 2 2 2 2 3
2
C207. 3 3 3 3 3
3
C207. 3 3 3 2 3
4
C207. 3 3 3 3 3
5
 SYLLABUS

EE307PC: ANALOG ELECTRONICS LAB

List of Experiments

S.No LIST OF EXPERIMENTS:

1 Draw the V-I Characteristics of given PN Junction Diode. Determine the static
and Dynamic Resistance of the Diode
2 Determine the Ripple factor. % of Regulation PIV and TUF of the given Rectifier
With & Without Filters
3 Obtain the I/O Characteristics of CE Configuration of BJT. Calculate H-
Parameters from Characteristics
4 Obtain the I/O Characteristics of CB Configuration of BJT. Calculate H-
Parameters from Characteristics
5 Obtain the I/O Characteristics of CC Configuration of BJT. Calculate H-
Parameters from Characteristics
6 Obtain the Drain and transfer characteristics of CD, CS configuration of JFET.
Calculate the gm, rd from the characteristics
7 Inverting And Non-Inverting Amplifiers Using Op Amps.
8 Adder And Subtractor Using Op Amp.
9 Integrator Circuit Using IC 741.
10 Differentiator Circuit Using Op Amp.
11 Current Shunt Feedback Amplifier
12 Design of RC Phase Shift Oscillator circuit and derive the gain condition for
oscillations practically for given frequency
13 Design Colpitts’s Oscillators for the given frequency and draw the output
waveforms
14 Design transformer coupled Class A Power Amplifier and draw the input and
output waveforms, find efficiency
 CONTENTS

1 Draw the V-I Characteristics of given PN Junction Diode. Determine the static and
Dynamic Resistance of the Diode
2 Determine the Ripple factor. % of Regulation PIV and TUF of the given Rectifier With
& Without Filters
3 Obtain the I/O Characteristics of CE Configuration of BJT. Calculate H-Parameters from
Characteristics
4 Obtain the I/O Characteristics of CB Configuration of BJT. Calculate H-Parameters from
Characteristics
5 Obtain the I/O Characteristics of CC Configuration of BJT. Calculate H-Parameters from
Characteristics
6 Obtain the Drain and transfer characteristics of CD, CS configuration of JFET. Calculate
the gm, rd from the characteristics
7 Inverting And Non-Inverting Amplifiers Using Op Amps.
8 Adder And Subtractor Using Op Amp.
9 Integrator Circuit Using IC 741.
10 Differentiator Circuit Using Op Amp.
11 Current Shunt Feedback Amplifier
12 Design of RC Phase Shift Oscillator circuit and derive the gain condition for oscillations
practically for given frequency
13 Design Colpitts’s Oscillators for the given frequency and draw the output waveforms
14 Design transformer coupled Class A Power Amplifier and draw the input and output
waveforms, find efficiency
 INDEX

S. Page Signature
Name of the Experiment Remarks
No. Nos.
Draw the V-I Characteristics of given PN Junction
1 Diode. Determine the static and Dynamic Resistance
of the Diode
Determine the Ripple factor. % of Regulation PIV and
2
TUF of the given Rectifier With & Without Filters

Obtain the I/O Characteristics of CE Configuration of

3
BJT. Calculate H-Parameters from Characteristics

Obtain the I/O Characteristics of CB Configuration of

4
BJT. Calculate H-Parameters from Characteristics

Obtain the I/O Characteristics of CC Configuration of

5
BJT. Calculate H-Parameters from Characteristics
Obtain the Drain and transfer characteristics of CD,
6 CS configuration of JFET. Calculate the gm, rd from
the characteristics
Inverting And Non-Inverting Amplifiers Using Op
7
Amps.

8 Adder And Subtractor Using Op Amp.

9 Integrator Circuit Using IC 741.

10 Differentiator Circuit Using Op Amp.

11 Current Shunt Feedback Amplifier

Design of RC Phase Shift Oscillator circuit and derive

12 the gain condition for oscillations practically for given
frequency

Design Colpitts’s Oscillators for the given frequency

13
and draw the output waveforms

Design transformer coupled Class A Power Amplifier

14 and draw the input and output waveforms, find
efficiency
 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

1. Draw the V-I Characteristics of given PN Junction Diode. Determine the

static and Dynamic Resistance of the Diode
AIM:
1. To observe and draw the Forward and Reverse bias V-I Characteristics of
a P-N Junction diode.
2. To calculate static and dynamic resistance in both forward and Reverse
Bias conditions.

APPARATUS:

1. P-NDiode1N4007 -1No.
2. Regulated Power supply(0-30V) -1No.
3. Resistor1KΩ -1No.
4. Ammeter(0-200mA) -1No.
5. Ammeter(0-200µA) -1No.
6. Voltmeter(0-20V) -2No.
7. Breadboard
8. Connecting wires

THEORY:

A p-n junction diode conducts only in one direction. The V-I characteristics of the diode are
curve between voltage across the diode and current flowing through the diode. When external
voltage is zero, circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When P-type (Anode) is connected to Positive terminal
and n- type (cathode) is connected to Negative terminal of the supply voltage is known as
forward bias. The potential barrier is reduced when diode is in the forward biased condition.
At some forward voltage, the potential barrier altogether eliminated and current starts
flowing through the diode and also in the circuit. Then diode is said to be in ON state. The
current increases with increasing forward voltage.
When N-type (cathode) is connected to Positive terminal and
P- type (Anode) is connected to Negative terminal of the supply voltage is
known as reverse bias and the potential barrier across the junction increases.
Therefore, the junction resistance becomes very high and a very small current
(reverse saturation current) flows in the circuit. Then diode is said to be in
OFF state. The reverse bias current is due to minority charge carriers.

Vignan Institute of Technology and Science, EEE Dept., Page 1

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

CIRCUIT DIAGRAM:

FORWARD BIAS

REVERSE BIAS:

MODEL GRAPH:

Vignan Institute of Technology and Science, EEE Dept., Page 2

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:
A) FORWARD BIAS:

1. Connections are made as per the circuit diagram.

2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve
is connected to the cathode of the diode
3. Switch on the power supply and increases the input voltage (supply voltage) in
Steps of 0.1V
4. Note down the corresponding current flowing through the diode and voltage across
the diode for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage (Vf) on X-axis and current (If) on Y-axis.

B) REVERSE BIAS:

1. Connections are made as per the circuit diagram

2. For reverse bias, the RPS Positive is connected to the cathode of the diode and
a. RPS Negative is connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in
Steps of 1V.
4. Note down the corresponding current flowing through the diode voltage across the
diode for each and every step of the input voltage.
5. The readings of voltage and current are tabulated
6. Graph is plotted between voltage (VR) on X-axis and current (IR) on Y-axis.

Vignan Institute of Technology and Science, EEE Dept., Page 3

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

OBSERVATIONS:

FORWARD BIAS:

Sl. No. Applied Voltage(V) Forward Voltage (VF)V Forward Current (IF)mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14

REVERSE BIAS

Sl.No. Applied Voltage(V) Reverse Voltage(VR)(-V) Reverse Current(IR(-µA))

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15

Vignan Institute of Technology and Science, EEE Dept., Page 4

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PRECAUTIONS:

1. All the connections should be correct.

2. Parallax error should be avoided while taking the readings from the Analog meters

CALCULATIONS:
In Forward bias condition:

Static Resistance Rs = Vf / If =

Dynamic Resistance Rd = ∆Vf/ ∆If =

In Reverse bias condition:

Static Resistance Rs = VR/IR =

Dynamic Resistance Rd = ∆VR/ ∆IR =

RESULT:

Vignan Institute of Technology and Science, EEE Dept., Page 5

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 6

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

2. Determine the Ripple factor. % of Regulation PIV and TUF of

the given Rectifier With & Without Filters

AIM:
To examine the input and output waveforms of Full Wave Rectifier and also
calculate its load regulation and ripple factor.

1. With Filter
2. Without Filter

APPARATUS:
Digital millimeter - 1No.
Transformer (6V-0-6V) - 1No.
Diode 1N4007 - 2No.
Capacitor 100μf/470μf - 1No.
Decade Resistance Box - 1No.
Breadboard
CRO and CRO probes
Connecting wires

THEORY:

A Full Wave Rectifier is a circuit, which converts an ac voltage into a pulsating dc voltage using
both half cycles of the applied ac voltage. It uses two diodes of which one conducts during one
half cycle while the other conducts during the other half cycle of the applied ac voltage.

The output voltage across the resistor R is the pharos sum of the two waveforms, it is also known
as a bi-phase circuit. The spaces between each half-wave developed by each diode are now being
filled in by the other. The average DC output voltage across the load resistor is now double that of
the single half-wave rectifier circuit and is about 0.637Vmax of the peak voltage by assuming no
losses. VMAX is the maximum peak value in one half of the secondary winding and VRMS is the
rms value.

Vignan Institute of Technology and Science, EEE Dept., Page 7

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

CIRCUIT DIAGRAM:

FULL WAVE RECTIFIER WITH OUT FILTER:

FULL WAVE RECTIFIER WITH FILTER:

Vignan Institute of Technology and Science, EEE Dept., Page 8

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Connect the ac mains to the primary side of the transformer and the secondary
side to the rectifier.
3. Measure the ac voltage at the input side of the rectifier.
4. Measure both ac and dc voltages at the output side of the rectifier.
5. Find the theoretical value of the dc voltage by using the formula Vdc=2Vm/П
6. Connect the filter capacitor across the load resistor and measure the values of
Vac and Vdc at the output.
7. The theoretical values of Ripple factors with and without capacitor are
calculated.
8. From the values of Vac and Vdc practical values of Ripple factors are
calculated. The practical values are compared with theoretical values.

THEORITICAL CALCULATIONS:

Vrms = Vm/ √2 Vm
=Vrms√2
Vdc=2Vm/П
With out filter:

Ripple factor, r = √ (Vrms/ Vdc )2 -1 =

S.NO RLΩ Vmax(V) Vdc Vrms Ripple ɳ

factor
1 100
2 200
3 300
4 400

With filter:
Ripple factor, r = 1/ (4√3 f C RL)

S.NO RL V1 V2 Vac Vdc Ripple

factor
1 100
2 200
3 300
4 400

Vignan Institute of Technology and Science, EEE Dept., Page 9

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

MODEL WAVEFORMS:

INPUT WAVEFORM

OUTPUT WAVEFORM WITH OUT FILTER:

OUTPUT WAVEFORM WITH FILTER:

PRECAUTIONS:
1. The primary and secondary side of the transformer should be carefully identified.
2. The polarities of all the diodes should be carefully identified.

RESULT:

Vignan Institute of Technology and Science, EEE Dept., Page 10

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

3. Obtain the I/O Characteristics of CB Configuration of BJT. Calculate H-

Parameters from Characteristics

AIM: 1. To draw the input and output characteristics of transistor connected in

CB configuration
2. To find  of the given transistor and also its input and output Resistances

COMPONENTS REQUIRED:

1. Transistor CL 100S 1No.

2. Resistor 1K Ω 2No’s

EQUIPMENT REQUIRED:

1. Ammeter (0-20mA) 2No.s

2. Volt meter (0-20V) 1No.s

3. Dual Powers supply (0-30V, 1A) 1No.

4. Bread Board 1No.

5. Connecting wires

CIRCUIT DIAGRAM:

INPUT CHARACTERISTICS:

Fig.1 Input Characteristics of CB Configuration

Vignan Institute of Technology and Science, EEE Dept., Page 11

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

OUTPUT CHARACTERISTICS:

Fig.2.Output Characteristics of CB Configuration

THEORY:

In the common Base configuration input is applied between emitter and base,
similarly output is t a k e n f r o m collector and b a s e . Here base of the transistor is
common to both input and output circuits and hence the name common base
configuration.

Input characteristics are similar to forward bias characteristics of a P-N junction diode.
The curve shifts left wi t h increase i n V C B value. Output characteristics can be obtained
by varying the outpu t voltage and noting the outpu t current. The characteristics have
been divided in to three regions namely active, saturation and cut off region. But BJT
has low input resistance and high output resistance in Common Base configuration.

PROCEDURE:

INPUT CHARACTERISTICS:

1. Co n nections are made as per the circuit diagram shown in fig.1..

2. For obtaining input characteristics, output voltage VCB is kept constant at 0V and

for different values of VEE (supply voltage) note the corresponding values of IE

and VBE by increasing the IE in steps of 0.5mA.

3. Repeat above procedure (step 2) for VCB =5V and 10V.

Vignan Institute of Technology and Science, EEE Dept., Page 12

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

TABULAR FORM:

S.No VCB = 0V VCB = 5V VCB = 10V

VEB(V) IE(mA ) VEB(V) IE(mA ) VEB(V)

1 IE(mA) )
2
3
4
5.
6
7.
8.
9.

OUTPUT CHARACTERISTICS:

1. Connections are made as per circuit diagram shown in fig.2.

2. For obtaining output characteristics, input current IE is kept constant at 0.5mA and
for different values of VCC note the corresponding values of IC and VCB.

3. Repeat above procedure(step 2) for different values of I E at 10mA, 20mA and 30mA

TABULAR FORM

IE= 2mA IE =4mA IE =6mA

VcB(v) Ic(mA) VCB(V) Ic(mA) VCB(V) Ic(mA)

1 1 1
2 2 2
3 3 3
4 4 4
5 5 5
6 6 6
7 7 7

Vignan Institute of Technology and Science, EEE Dept., Page 13

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

EXPECTED GRAPH:

Fig.3 Input & Output characteristics of Transistor in CB Configuration

1. Plot the input characteristics by taking IE on y – axis and VEB on X – axis

2. Plot the output characteristics by taking Ic on y – axis and VcB on X – axis

Calculations from graph:

1.Input resistance: To obtain input resistance find VEB and IE for a constant VCB on one of
the input characteristics.

Ri = VEB / IE ( VCB = constant)

2.Output resistance: To obtain output resistance find Ic and VCB at constant IE.

Ro = VCB / IC (IE = constant).

3.Current Gain

INFERENCE:

1. Input resistance is in the order of tens of ohms since emitter-base junction is forward
biased.
2. Output resistance is in the order of hundreds of kilo-ohms since collector-base junction
is reverse biased.
3. Higher is the value of VCB, smaller is the cut in voltage.
4. Increase in the value of IB causes saturation of transistor at small voltages.

Vignan Institute of Technology and Science, EEE Dept., Page 14

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PRECAUTIONS:

1. Identify the three terminals of the transistor emitter, base and collector.
2. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage of the transistor.
3. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
4. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.

RESULT: Input and Output characteristics of transistor in CB configuration have been plotted
and from the characteristics input and output resistances were calculated .

1. Input Resistance (Ri) = ……………

2. Output Resistance (Ro) = ……………
3.  = Ic/Ie |Vce=constant ______
QUESTIONS:

1. Define transistor and mention types of transistors. Draw their symbolic diagram and
indicate terminals?
2. What are the three configurations of Transistor?

3. In which region transistor acts as an Amplifier?

4. In which region transistor acts as a Switch?

5. Why transistor is called current controlled device?

6. What is meant by Base width modulation?

7. What is the range of α for the transistor?

8. Draw the input and output characteristics of the transistor in CB configuration?

9. Identify various regions in output characteristics?

10. What are the applications of CB configuration?

11. What are the input and output impedances of CB configuration?

12. Define α (alpha)? What is the relation between α and β?

13. What is EARLY effect?

14. Draw diagram of CB configuration for PNP transistor?

15. What is the power gain of CB configuration?

Vignan Institute of Technology and Science, EEE Dept., Page 15

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 16

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

4. Obtain the I/O Characteristics of CE Configuration of BJT. Calculate H-

Parameters from Characteristics
AIM: 1. To draw the input and output characteristics of transistor connected in

CE configuration

2. To find β of the given transistor and also its input and output Resistances

COMPONENTS REQUIRED:

1. Transistor, BC107/ CL100S -1No.

2. Resistor, 220KΩ -1No
3. Resistor, 560Ω -1No.

EQUIPMENT REQUIRED:

1. Regulated power supply (0-30V) -1No.

2. Voltmeter (0-20V) -2No
3. Ammeters (0-20mA) -1No.
4. Ammeters (0-200μA) -1No.
5. Bread board
6. Connecting wires

THEORY:

In common emitter configuration, input voltage is applied between base and emitter
terminals and output is taken across the collector and emitter terminals. Therefore the emitter
terminal is common to both input and output.

The input characteristics of CE configuration resemble that of a forward biased diode curve,
since the Base-Emitter junction of the transistor is forward biased. As compared to CB
configuration, input current IB increases less rapidly with input voltage VBE. Therefore input
resistance of CE circuit is higher than that of CB circuit.

The output characteristics are drawn between Ic and VCE at constant IB. Collector current
varies with VCE up to few volts only. After this the collector current becomes almost constant,
and independent of VCE. The value of VCE up to which the collector current changes with V CE is
known as Knee voltage. The transistor always operated in the region above Knee voltage, IC is
always constant and is approximately equal to IB

Vignan Institute of Technology and Science, EEE Dept., Page 17

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

The current amplification factor of CE configuration is given by

β = ΔIC/ΔIB

Input Resistance, Ri or hie = ∆VBE /∆IB (μA) at Constant VCE

Output Résistance, R0 or hoe = ∆VCE /∆IC at Constant IB (μA)

CIRCUIT DIAGRAM:

INPUT CHARACTERISTICS:

Fig.1.Input Characteristics of Transistor in CE Configuration

OUTPUT CHARACTERISTICS:

Fig.2.Output Characteristics of Transistor in CE Configuration

Vignan Institute of Technology and Science, EEE Dept., Page 18

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:

INPUT CHARECTERSTICS:

1. Connections are made as per the circuit diagram shown in fig.1.

2. For plotting the input characteristics the output voltage VCE is kept constant at 1V
and for different values of input voltage VBB, note down the corresponding values of

IB and VBE.

3. Repeat the step 2 by keeping VCE constant at 2V and 4V and tabulate all the readings.
4. Plot the graph between VBE and IB for constant VCE.

OUTPUT CHARACTERSTICS:

1. Connections are made as per the circuit diagram shown in fig.2.

2. For plotting the output characteristics, the input current IB is kept constant at 0μA and for
different values of VCC, the corresponding values of IC and VCE are noted down.
3. Repeat the above step by keeping IB at 20 μA and 40 μA and tabulate all the readings.
4. Plot the graph between VCE and IC for constant IB

OBSERVATIONS:

INPUT CHARACTERISTICS:

S.No VCE = 0V VCE = 5V VCE = 10V

VEB(V) IB(mA ) VEB(V) IB(mA ) VEB(V)

1 IB(mA) )
2
3
4
5.
6
7.
8.
9.

Vignan Institute of Technology and Science, EEE Dept., Page 19

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

OUTPUT CHAREACTARISTICS:

IB= 10µA IB =20µA IB =30µA

Vce(v) Ic(mA) VCE(V) Ic(mA) VCE(V) Ic(mA)

1 1 1
2 2 2
3 3 3
4 4 4
5 5 5
6 6 6
7 7 7

EXPECTED GRAPHS:

Fig.3 Input & Output Characteristics of Transistor in CE configuration

Calculations from graph:

1. Input resistance: To obtain input resistance find VBE and IB at constant VCE on one of
the input characteristics.
Ri = VBE / IB (VCE constant)

2. Output resistance: To obtain output resistance, find IC and VCE at

constant IB.

Ro = VCE / IC (IB constant)

3. Current Gain β = Ic/Ib |VCE = constant

Vignan Institute of Technology and Science, EEE Dept., Page 20
 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Inference:

1. Input and Output resistances are of medium values.

2. Cut-in-voltage decreases as VCE is decreased.
3. Transistor saturates earlier with increase in the value of IB.

Precautions:

1. Identify the three terminals of the transistor emitter, base and collector.
2. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage of the transistor.
3. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
4. Do not switch ON the power supply unless the circuit connections are made as per the
circuit diagram

Result: Input and Output characteristics of transistor in CE configuration have been plotted

and from the characteristics input resistance , output resistances and current gain

were calculated .

1. Input Resistance (Ri) = ……………

2. Output Resistance (Ro) = ……………

3. β =Ic/Ib |Vce=constant ______

VIVA QUESTIONS:

1. What is the range of β for the transistor?

2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics?
4. What is the relation between α and β?
5. Define current gain in CE configuration?
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor?
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?

Vignan Institute of Technology and Science, EEE Dept., Page 21

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 22

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

6. Obtain the Drain and transfer characteristics of CD, CS configuration of

JFET. Calculate the gm, rd from the characteristics

AIM: To study and plot the family of Drain Characteristics and Transfer Characteristics of the
given FET

REQUIRED COMPONENTS:
JFET BFW11 1
Resistor 100  1
560  1

EQUIPMENT:

Name Range Qty

PCB/ Bread Board - 1

Dual channel Regulated 0-30V DC 1

Power Supply

Digital Ammeter

Digital Voltmeter 0-200mA DC 1

Connecting Wires 0-20V DC 2

SPECIFICATIONS:

For JFET BFW11: -

Gate to Source Voltage , VGS = - 30V

Drain to Source voltage, VDS = 30V

Drain current, ID = 2mA

Forward Gate Current, IGF = 10 mA

Maximum Power Dissipation , PD = 300 mW.

Vignan Institute of Technology and Science, EEE Dept., Page 23

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

THEORY:

Pin assignment of FET:

assignment of FET:

Source Drain

Gate

Substrate

Field –effect transistors can be divided into two general types : JFET(junction Field Effect
Transistor) and MOSFET( Metal Oxide Semiconductor FET) or IGFET( Insulated Gate FET).
The three terminals of a FET are called Gate, Source and Drain. Depending on the type of
substrate chosen for fabrication, the FET is classified as N- channel or P- channel FET. FET is a
voltage controlled device and they are unipolar.

The operation of a JFET can be explained as follows:

If a battery is connected with its positive terminal to the drain and negative terminal to the
source of the n-channel FET, current flows just as it flows in a semiconductor bar. If the drain
voltage is varied, the current magnitude changes. Now, we connect a voltage V GG to the Gate
terminal to reverse bias it. As the drain voltage is increased the drain side of the PN junction
between gate and channel will be more reverse biased than at the source end. As the channel is
lightly doped compared to the gate material under this reverse bias the depletion region is
penetrated more into the channel region and is more pronounced on drain side and so channel
width is not uniform. Because of this non uniformity in the channel the current starts reducing and
reaches saturation when the drain voltage is sufficient to produce enough reverse bias voltage to
keep the saturation current. If the voltage is increased further to higher values than this, then
avalanche breakdown takes place and current increases rapidly for little variation in the drain
voltage.

The saturation drain current is given by

IDS = IDSS [1- (VGS / VP)]2

Where IDSS is the value of IDS when VGS = 0.

VGS =gate to source voltage

VP = pinch off voltage

Vignan Institute of Technology and Science, EEE Dept., Page 24

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

CIRCUIT DIAGRAM:

D ID (0–200mA) 560

100

G BFW11

VDD

VGG VGS S VDS

(0-30V) (0–20V) (0–20V)

(0-30V)

PROCEDURE:

DRAIN CHARACTERISTICS

1. Make the connections as per circuit diagram.

2. Set VGS = 0V by varying VGG.
3. Vary VDD gradually and note down both drain current ID and drain to source voltage
(VDS).
4. Repeat above procedure (step 3) for VGS = -1V.
5. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at constant VGS.

TRANSFER CHARACTERISTICS:

1. Now set VDS = 2V by varying VDD.

2. Vary VGG gradually from 0 to 5V in steps and note down both drain current (ID) and gate
to source voltage (VGS).
3. Repeat above procedure (step 2) for VDS = 4V.
4. Plot the Transfer characteristics by taking VGS on X-axis and ID on Y-axis at constant VDS.

Vignan Institute of Technology and Science, EEE Dept., Page 25

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

OBSERVATIONS:

DRAIN CHARACTERISTICS

VGS = 0V VGS = -1V

VDS (V) ID (mA) VDS (V) ID (mA)

TRANSFER CHARACTERISTICS

VDS = 2V VDS = 4V

VGS (V) ID (mA) VGS (V) ID (mA)

EXPECTED GRAPH:

1. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at constant VGS.
2. Plot the Transfer characteristics by taking VGS on X-axis and ID on Y-axis at constant VDS.

Vignan Institute of Technology and Science, EEE Dept., Page 26

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

CALCULATIONS FROM GRAPH:

Drain Resistance (rd) :

It is given by the ratio of small change in drain to source voltage (VDS) to the corresponding
change in Drain current (ID) for a constant gate to source voltage (VGS), when the JFET is
operating in pinch-off or saturation region.

Trans-Conductance (gm) :
Ratio of small change in drain current (ID) to the corresponding change in gate to source voltage
(VGS) for a constant VDS.gm = ID / VGS at constant VDS . (from transfer characteristics)The
value of gm is expressed in mho’s or siemens (s).
Amplification Factor () :

It is given by the ratio of small change in drain to source voltage (VDS) to the corresponding
change in gate to source voltage (VGS) for a constant drain current.

 = VDS / VGS.

 = (VDS / ID) X (ID / VGS)

 = rd X gm.

INFERENCE:

1. As the gate to source voltage (VGS) is increased above zero, pinch off voltage is increased at a
smaller value of drain current as compared to that when VGS =0 V

2. The value of drain to source voltage (VDS) is decreased as compared to that when VGS =0 V

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the FET.

RESULT:

1. Drain Resistance (rd) = ………….

2. Transconductance (gm) = ………….
3. Amplification factor () = ……………

Vignan Institute of Technology and Science, EEE Dept., Page 27

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

REASONING QUESTIONS

1. Why FET is called as a unipolar transistor?

2. What are the advantages of FET?
3. What is the difference between MOSFET and FET?
4. What is transconductance?
5. What is amplification factor?
6. Why thermal runaway does not occur in FET?
7. State whether FET is voltage controlled or current controlled device and also state the
reason?
8. State why BJT is current controlled device?
9. Why current gain is important parameter in BJT where as conductance is important
parameter in FET?
10. Why we plot input and output characteristics? What information we can obtain?

Vignan Institute of Technology and Science, EEE Dept., Page 28

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

7. INVERTING AND NON-INVERTING AMPLIFIERS USING OP AMPS.

AIM: To design and setup an inverting amplifier and mob- inverting amplifier circuit with OP
AMP 741C for a gain of 10, plot the waveforms, observe the phase reversal, measure the gain.

APPARATUS:

Sl .No Name and Specification Quantity required

1 Dual power supply +/- 15V 1
2 Function generator (0 - 1MHz) 1
3 Oscilloscope 1
4 Bread board 1
5 IC 741C 1
6 Resistors 2
7 Probes and connecting wires As required.

CIRCUIT DIAGRAM:

Fig: Inverting amplifier

Fig: Non Inverting amplifier

Vignan Institute of Technology and Science, EEE Dept., Page 29

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

THEORY:

INVERTING AMPLIFIER:

It is a closed loop mode application of opamp and employs negative

feedback. The Rf and Ri are the feedback and input resistance of the circuit
respectively. The input terminals of the opamp draws no current because of the large
differential input impedance. The potential difference across the input terminals of
an opamp is zero because of the large open loop gain. Due to these two conditions,
the inverting terminal is at virtual ground potential. So the current flowing through
Ri and Rf are the same.

Ii = If

That is Vin/Ri = - Vo

/Rf Therefore Vo/Vin = Av =

- Rf/ Ri,

Here the –Ve sign indicates that the output will be an amplified wave with
1800 phase shift (inverted output). By varying the Rf or Ri, the gain of the amplifier
can be varied to any desired value.

NON INVERTING AMPLIFIER:

It is a linear closed loop mode application of op-amp and employs negative
feedback. The Rf and Ri are the feedback and input resistance of the circuit
respectively. There will be no phase difference between the output and input. Hence
it is called non-inverting amplifier.

Av = Vo / Vin = 1+ Rf/ Ri ,

Here the +Ve sign indicates that the output will be an amplified wave in
phase with the input. By varying the Rf or Ri, the gain of the amplifier can be varied
to any desired value.

Vignan Institute of Technology and Science, EEE Dept., Page 30

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:

1. Check the components.

2. Setup the circuit on the breadboard and check the connections.
3. Switch on the power supply.
4. Give 1 Vpp / 1 KHz sine wave as input.
5. Observe input and output on the two channels of the oscilloscope simultaneously.
6. Note down and draw the input and output waveforms on the graph.
7. Verify the input and output waveforms are out of phase.
8. Verify the obtained gain is same as designed value of gain.

OBSERVATIONS:

Inverting amplifier:

Amplitude (v) Time period (msec)

In put

Out put

Non inverting amplifier:

Amplitude (v) Time period (msec)

In put

Out put

RESULT:

Vignan Institute of Technology and Science, EEE Dept., Page 31

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 32

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

8. ADDER AND SUBTRACTOR USING OP AMP.

AIM: To design and setup a summing amplifier circuit with OP AMP 741C for a gain of 2 and
verify the output.

APPARATUS:

Sl .No Name and Specification Quantity required

1 Dual power supply +/- 15V 1
2 DC power source 1.5V 2
3 Function generator (0- 1MHz) 1
4 Oscilloscope 1
5 Bread board 1
6 IC 741C 1
7 Resistor 3
8 Probes and connecting wires As required.

THEORY:

ADDER:

Op-amp can be used to design a circuit whose output is the sum of several input signals.
Such a circuit is called a summing amplifier or an adder. Summing amplifier can be classified
as inverting & non-inverting summer depending on the input applied to inverting & non-
inverting terminals respectively. Circuit Diagram shows an inverting summing amplifier with 2
inputs. Here the output will be amplified version of the sum of the two input voltages with 1800
phase reversal.

Vo = - ( Rf/ Ri )(V1+V2)

Vignan Institute of Technology and Science, EEE Dept., Page 33

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

SUBTRACTOR:

A difference amplifier is a circuit that gives the amplified version of the difference of the
two inputs, Vo =A(V1-V2), Where V1 and V2 are the inputs and A is the voltage gain.
Here input voltage V1 is connected to non-inverting terminal and V2 to the inverting terminal.
This is also called as differential amplifier. Output of a differential amplifier can be determined
using super position theorem. When V1=0, the circuit becomes an inverting amplifier with input
V2 and the resulting output is V02= -Rf /Ri (V2). When V2=0, the circuit become a non-inverting
amplifier with input V1 and the resulting output is V01= Rf/Ri(V1).

Therefore the resulting output according to super position theorem is

Vo = V01+ V02 = Rf/Ri(V1-V2)

OBSERVATIONS:

Adder:
v1(v) V2(v) V0(v)

Subtractor:

v1(v) V2(v) V0(v)

Vignan Institute of Technology and Science, EEE Dept., Page 34

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

CIRCUIT DIAGRAM:

Fig: Adder

Fig: Subtractor

Vignan Institute of Technology and Science, EEE Dept., Page 35

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:

1. Check the components.

2. Setup the circuit on the breadboard and check the connections.
3. Switch on the power supply.
4. Give V1 =V2 = +1.5V DC with polarity as shown in fig.1.
5. Make sure that the CRO selector is in the D.C. coupling position.
6. Observe input and output on two channels of the oscilloscope simultaneously.
7. Note down and draw the input and output waveforms on the graph.
8. Verify that the output voltage is -6VDC
9. Repeat the procedure with V1 =1Vpp / 1 KHz sine wave and V2 = +1.5Vdc
as shown in fig2
Verify the output .

RESULT:

Vignan Institute of Technology and Science, EEE Dept., Page 36

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

9. INTEGRATOR CIRCUIT USING IC 741

AIM: To design and setup an integrator circuit using OP AMP 741C and plot its pulse
response.

APPARATUS:

Sl. No Name and Specification Quantity required

1 Dual power supply +/- 15V 1
2 Function generator (0-1MHz) 1
3 Oscilloscope 1
4 Bread board 1
5 IC 741C 1
6 Resistor 1
7 Capacitor 0.01µF 1
8 Probes and connecting wires As required.

THEORY:

It is a closed loop op-amp circuit which performs the mathematical operation of

integration. That is the output waveform is the integral of the input voltage and is given by
Vo = ( -1/RfC) ∫Vindt. The integrator circuit is constructed from basic inverting amplifier by
replacing the feedback resistance Rf with capacitor C. This circuit also works as low pass
filter.

Vignan Institute of Technology and Science, EEE Dept., Page 37

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

CIRCUIT DIAGRAM:

Fig: integrator

OBSERVATIONS:

For sine wave:

Amplitude(V) Time
Period(Msec)

Input

Output

For square wave:

Amplitude(V) Time
Period(Msec)

In Put

Out Put

Vignan Institute of Technology and Science, EEE Dept., Page 38

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 39

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:

1. Check the components.

2. Setup the circuit on the breadboard and check the connections.
3. Switch on the power supply.
4. Give Vi= 2Vpp, 1KHz square wave.
5. Keep the oscilloscope in AC coupling mode.
6. Observe input and output on two channels of the oscilloscope simultaneously.
7. Draw the input and output waveforms on the graph.

Result:

Vignan Institute of Technology and Science, EEE Dept., Page 40

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

10. DIFFERENTIATOR CIRCUIT USING OP AMP.

AIM: To design and setup a Differentiator circuit using OP AMP 741C and plot their pulse response.

APPARATUS:

Sl. No Name and Specification Quantity required

1 Dual power supply +/- 15V 1
2 Function generator (0- 1MHz) 1
3 Oscilloscope 1
4 Bread board 1
5 IC 741C 1
6 Resistor 1
7 Capacitor 1
8 Probes and connecting wires As required.

CIRCUIT DIAGRAM:

Fig: differentiator

Vignan Institute of Technology and Science, EEE Dept., Page 41

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

THEORY:

It is an opamp circuit which performs the mathematical operation of differentiation.

That is the output waveform is the derivative or differentia l of the input voltage. That is Vo= -
RfCd(Vin)/dt. The differentiator circuit is constructed from basic inverting amplifier by
replacing the input resistance Ri with capacitor C. This circuit also works as high pass filter.

PROCEDURE:

1. Check the components.

2. Setup the circuit on the breadboard and check the connections.
3. Switch on the power supply.
4. Keep the oscilloscope in AC coupling mode.
5. Give Vi= 2Vpp, 1KHz square wave.
6. Observe input and output on two channels of the oscilloscope simultaneously.
7. Note down and draw the input and output waveforms on the graph.

OBSERVATIONS:

For sine wave:

Amplitude (v) Time period (msec)

In put

Out put

For square wave:

Amplitude (v) Time period (msec)

In put

Out put

Vignan Institute of Technology and Science, EEE Dept., Page 42

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Result:

Vignan Institute of Technology and Science, EEE Dept., Page 43

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 44

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

11. CURRENT SHUNT FEEDBACK AMPLIFIER

AIM:

1. To study the current shunt feedback amplifier.

2. To measure the voltage gain of the amplifier at 1 KHz.
3. To obtain the frequency response characteristic and the band width of the amplifier.

APPARATUS REQUIRED:

S.No Device Range/Rating Qty

1 (a) DC supply voltage 12V 1
(b) BJT BC107BP 2

(c) Capacitors 10uF,47uF , 4,1

(d) Resistors 10kΩ 1,2,1,
47kΩ,100kΩ 1,2,1,1
5kΩ,4.7kΩ,1kΩ,470kΩ
2 Signal generator 0.1Hz-1MHz 1
3 CRO 0Hz-20MHz 1
4 Connecting wires 5A

THEORY:

Feedback plays a very important role in electronic circuits and the basic parameters,
such as input impedance, output impedance, current and voltage gain and bandwidth, may
be altered considerably by the use of feedback for a given amplifier.
A portion of the output signal is taken from the output of the amplifier and is
combined with the normal input signal and thereby the feedback is accomplished.
There are two types of feedback. They are i) Positive feedback and ii) Negative
feedback. Negative feedback helps to increase the bandwidth, decrease gain, distortion, and
noise, modify input and output resistances as desired.
A current shunt feedback amplifier circuit is illustrated in the figure. It is called a
series-derived, shunt-fed feedback. The shunt connection at the input reduces the input
resistance and the series connection at the output increases the output resistance. This is a
true current amplifier.

Vignan Institute of Technology and Science, EEE Dept., Page 45

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:

1. Connections are made as per circuit diagram.

2. Keep the input voltage constant at 20mV peak-peak and 1 kHz frequency. For different values of
load resistance, note down the output voltage and calculate the gain by using the expression

𝑨𝑽=𝟐𝟎𝒍𝒐𝒈(𝒗𝒐𝒖𝒕/𝒗𝒊𝒏)
3. Add the emitter bypass capacitor and repeat step 2. And observe the effect of feedback on the gain of
the amplifier.
4. For plotting the frequency the input voltage is kept constant at 20mV peak-peak and the frequency is
varied from 100Hz to 1MHz.
5. Note down the value of output voltage for each frequency. All the readings are tabulated and the
voltage gain in dB is calculated by using expression
𝑨𝑽=𝟐𝟎𝒍𝒐𝒈(𝒗𝒐𝒖𝒕/𝒗𝒊𝒏)
6. A graph is drawn by taking frequency on X-axis and gain on Y-axis on semi log graph sheet.
7. The bandwidth of the amplifier is calculated from the graph using the expression Bandwidth.
B.W=f2-f1
Where f1 is lower cut-off frequency, f2 is upper cut-off frequency.
8. The gain-bandwidth product of the amplifier is calculated by using the expression.
Gain-Bandwidth Product=(3-dB mid band gain)×(Bandwidth).

CIRCUIT DIAGRAM:

WITHOUT FEEDBACK

Vignan Institute of Technology and Science, EEE Dept., Page 46

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

WITH FEEDBACK

TABULAR FORM:

V(in)=20mv

Frequency Output Output Gain Gain Gain in Gain in

(in voltage voltage with without wit dB dB with
Hz) without feedback feedback h feedback without feedback
feedback feedback
𝑉0/𝑉𝑖𝑛 𝑉0/𝑉𝑖𝑛
𝑨𝑽=𝟐𝟎𝒍𝒐𝒈(𝒗 𝑨𝑽=𝟐𝟎𝒍𝒐𝒈(𝒗
𝒐𝒖𝒕/𝒗𝒊𝒏) 𝒐𝒖𝒕/𝒗𝒊𝒏)

20
50
100
1K
10K
100K
200K,500K
1M

Vignan Institute of Technology and Science, EEE Dept., Page 47

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

MODEL GRAPH:

RESULT: - With feed-back, gain decreases and band width increases

1. Frequency response of Current-Shunt Feedback amplifier is plotted.

2. Gain = dB (maximum).without Feed-back. 3 3. Gain = dB (maximum).with
Feed-back.
3. Bandwidth= fH--fL = Hz. without Feed-back.
4. Bandwidth= fH--fL = Hz. with Feed-back.

Vignan Institute of Technology and Science, EEE Dept., Page 48

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

12. RC PHASE SHIFT OSCILLATOR

AIM:
To design and setup RC phase shift oscillator using BJT and observe the sinusoidal output wave
form.

APPARATUS REQUIRED:

S.No. Name Of The Type Range Quantity (No.S)

Equipment

1 Transistor BC107BP 2

2 Resistors 100KΩ,4.7KΩ one from each

1kΩ,
3 Resistor 10kΩ 3

4 Capacitors 100μF 1

5 Capacitor 1nF 3

6 CRO 0-20MHZ

7 RPS (0 – 30V) 1

8 Bread
Board 1

9 Connecting Required
wires

THEORY:

An oscillator is an electronic circuit for generating an AC signal voltage with a DC

supply as the only input requirement. The frequency of the generated signal is decided by the
circuit elements used. An oscillator requires an amplifier, a frequency selective network and a
positive feedback from the output to the input.
The Barkhausen criterion for sustained oscillation is Aβ = 1 where A is the gain of the
amplifier and β is the feedback factor (gain).The unity gain means signal is in phase. ( If the
signal is 1800 out of phase and gain will be -1). RC-Phase shift Oscillator has a CE amplifier
followed by three sections of RC phase shift feed-back Networks. The output of the last stage

Vignan Institute of Technology and Science, EEE Dept., Page 49

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

is return to the input of the amplifier. The values of R and C are chosen such that the phase
shift of each RC section is 60º.Thus The RC ladder network produces a total phase shift of
180º between its input and output voltage for the given frequency. Since CE Amplifier
produces 180 º phases shift. The total phase shift from the base of the transistor around the
circuit and back to the base will be exactly 360º or 0º. This satisfies the Barkhausen condition
for sustaining oscillations and total loop gain of this circuit is greater than or equal to 1, this
condition used to generate the sinusoidal oscillations.

MODEL GRAPH:

CIRCUIT DIAGRAM:

Vignan Institute of Technology and Science, EEE Dept., Page 50

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

PROCEDURE:

1. Identify the pin details of BC107 Transistor (or equivalent silicon Transistor such as
BC108/547) and test it using a millimeter. Set up the circuit on breadboard as shown in
figure.
2. A 12V Supply Voltage is given by using Regulated power supply and output
is taken from collector of the Transistor.
3. By using CRO the output time period and voltage are noted.

4. Plot all the readings curves on a single graph sheet.

RESULT:

Vignan Institute of Technology and Science, EEE Dept., Page 51

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

Vignan Institute of Technology and Science, EEE Dept., Page 52

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

13. HARTLEY AND COLPITT’S OSCILLATOR

13. (A) HARTLEY OSCILLATOR

AIM: Find practical frequency of HARTLEY oscillator and compare it with theoretical frequency for
L = 10mH and C = 20nF.

APPARATUS REQUIRED:

S.No Device Range/Rating Quantity

a) DC supply 12V 1
voltage
1 b) Inductors 10mH 2
c) Capacitor 20nF, 10uF,47uF 1,2,1

d) Resistor 1Kohm,10Kohm,4.7Kohm,100Kohm Each 1

e) NPN Transistor BC 107 1

2 Cathode Ray (0-20) MHz 1

Oscilloscope
3 BNC Connector 1
4 Connecting wires Required

CIRCUIT DIAGRAM:

Vignan Institute of Technology and Science, EEE Dept., Page 53

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

THEORY:

In a Hartley oscillator the oscillation frequency is determined by a tank circuit

comprising of two inductors and one capacitor. The inductors are connected in series and the
capacitor is connected across them in parallel. Hartley oscillators are commonly used in radio
frequency (RF) oscillator applications and the recommended frequency range is from 20KHz
to 30MHz. Hartley oscillators can be operated at frequencies lower than 20KHz, but for
lower frequencies the inductor value need to be high and it has a practical limit. The circuit
diagram of a typical Hartley oscillator is shown in the figure above.

PROCEDURE:

1. Connect the circuit as shown in figure.

2. With C6=20nF capacitor and L1=L2=10mH in the circuit and observe the waveform.
3. Time period of the waveform is to be noted and frequency is to be
calculated by the formula f = 1/T .

Find the theoretical frequency from the formula 𝑓 = 1/2П√𝐿𝑡𝐶

Where LT = L1 + L2 = 10mH + 10mH = 20mH and compare
theoretical and practical values

TABULATIONS:

LT(mH) C (uF) Theoretical Practical Vo (peak

frequenc frequenc to peak)
y (KHz) y (KHz)
20mH 20nF

RESULT:

For C6=20nF and =20mH

1. Theoretical frequency=
2. Practical frequency=

Vignan Institute of Technology and Science, EEE Dept., Page 54

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

13. B. COLPITTS OSCILLATOR

AIM: Find practical frequency of Colpitt’s oscillator and to compare it with theoretical
Frequency for L= 10mH and C= 10nF respectively.

APPARATUS REQUIRED:

S.No Device Range/Rating Quantity

a) DC supply 12V 1
voltage
1 b) Inductors 20mH 1
c) Capacitor 10nF,10uF,47uF 2,2,1
d) Resistor 1Kohm,10Kohm,4.7Kohm,100Kohm

e) NPN Transistor BC 107 each one

1
2 Cathode Ray (0-20) MHz 1
Oscilloscope
3 BNC Connector 1
4 Connecting wires Required

CIRCUIT DIAGRAM:

Vignan Institute of Technology and Science, EEE Dept., Page 55

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

THEORY:

Oscillator is an amplifier with the positive feedback and it converts DC input signal
into AC output waveform with certain variable frequency drive and certain shape of output
waveform (like sine wave or square wave, etc) by using the positive feedback instead of input
signal. named after an American Engineer Edwin H Colpitts in 1918.
Colpitt’s Oscillator consists of a tank circuit which is an LC resonance sub circuit
made of two series capacitors connected in parallel to an inductor and frequency of
oscillations can be determined by using the values of these capacitors and inductor of the tank
circuit.

PROCEDURE:-
1. Connect the circuit as shown in the figure
2. Connect C3= 10nFand C4= 10nF in the circuit and observe the waveform.
3. Time period of the waveform is to be noted and frequency should be calculated

by the formula f=1/T

Find theoretical frequency from the formula 𝑓=1/2П√𝐿𝐶𝑇

Where 𝐶𝑇=𝐶1𝐶2/𝐶1+𝐶2 and compare theoretical and practical values

TABULATIONS:

S.NO L(mH) C3 (F) C4 (F) CT (F) Theoretical Practical Vo(V)

Frequency Frequency Peak to
(KHz) (KHz) peak
1 10 10n 10n

RESULT:

1. For C3=10nF, C4=10nf & L= 10mH

Theoretical frequency =

Practical frequency =

Vignan Institute of Technology and Science, EEE Dept., Page 56

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

14. CLASS-A POWER AMPLIFIER.

AIM: To construct a Class A power amplifier and observe the waveform and to compute
maximum output power and efficiency.

APPARATUS REQUIRED:

S.No. Name Range Quantity

1 Transistor CL100, BC558 1,1
2 Resistor 47kΩ,33Ω,220Ω, 2,1
3 Capacitor 47 μF 2
4 Signal Generator (0-3)MHz 1
5 CRO 30MHz 1
6 Regulated power supply (0-30)V 1

7 Bread Board 1

CIRCUIT DIAGRAM:

Vignan Institute of Technology and Science, EEE Dept., Page 57

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

THEORY:

The power amplifier is said to be Class A amplifier if the Q point and the input signal are selected
such that the output signal is obtained for a full input signal cycle.

For all values of input signal, the transistor remains in the active region and never enters into
cut-off or saturation region. When an a.c signal is applied, the collector voltage varies
sinusoidally hence the collector current also varies sinusoidally. The collector current flows for
3600 (full cycle) of the input signal. i e the angle of the collector current flow is 3600.

PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Set Vi =50 mv, using the signal generator.
3. Keeping the input voltage constant, vary the frequency from 10 Hz to 1M Hz in
regular steps and note down the corresponding output voltage.
4. Plot the graph; Gain (dB) vs Frequency(Hz).
• 2/RL Effeciency,η = Po,max/Pc

• Maximum power transfer =Po,max=Vo

TABULAR COLUMN:

Sl.No. Frequency Output Voltage(Vo) Gain Av=Vo/Vi Gain In Db

20 Log Gain

RESULT:

1. Frequency response of BJT in class-A Power Amplifier is plotted.

2. Gain = dB (maximum).
3. Bandwidth= fH--fL = Hz.

Vignan Institute of Technology and Science, EEE Dept., Page 58

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

ADDITIONAL EXPERIMENTS
15. COMPARATOR USING OP AMP.

AIM: To design and setup a zero crossing detector circuit with OP AMP 741C and plot
the waveforms.
APPARATUS:

Sl .No Name and Specification Quantity required

1 Dual power supply +/- 15V 1
2 Function generator (0- 1MHz) 1
3 Oscilloscope 1
4 Bread board 1
5 IC 741C 1
6 Probes and connecting wires As required.

CIRCUIT DIAGRAM:

Fig: comparator

THEORY:

It is the open loop/ saturation mode operation of op-amp. Here the signal is given the non-inverting
terminal. So the output signal is in phase with the input signal. Such a circuit is called non-inverting zero

Vignan Institute of Technology and Science, EEE Dept., Page 59

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

crossing detector. In open loop configuration, the gain of the op-amp is very high, so when the input voltage
is above zero voltage, output of the circuit goes to+ Vsat which is approximately +13V. Similarly when the
input voltage is below zero voltage, the output goes to - Vsat which is approximately -13V.
PROCEDURE:
1. Check the components.
2. Setup the circuit on the breadboard and check the connections.
3. Switch on the power supply.
4. Give Vin= 2 Vpp/ 1KHz sine wave.
5. Observe input and output on the oscilloscope simultaneously.
6. Note down and draw the input and output waveforms on the graph.
7. Verify the output .

OBSERVATIONS:

Amplitude (v) Time period

(msec)

In put

Out put

RESULT:

Vignan Institute of Technology and Science, EEE Dept., Page 60

 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

16. WEIN BRIDGE OSCILLATOR

AIM: To design and set up a Wein Bridge oscillator using BJT and to observe the sinusoidal output
waveform.

APPARATUS REQUIRED:

S.NO NAME OF THE TYPE RANGE QUANTITY (NO.S)

EQUIPMENT

1 Transistor BC547 2
2 Resistors 47kΩ, one from each
10kΩ,2.2kΩ,680Ω
3 Resistor 4.7kΩ 3
4 Capacitors 1μF,22μF one from each
5 Capacitor 0.01 μF 3
6 CRO
7 RPS (0 – 30V) 1
8 Bread Board
1
9 Connecting wires Required

THEORY:

An oscillator is an electronic circuit for generating an AC signal voltage with a DC supply as

the only input requirement. The frequency of the generated signal is decided by the circuit
elements used. An oscillator requires an amplifier, a frequency selective network and a
positive feedback from the output to the input.
The Barkhausen criterion for sustained oscillation is Aβ = 1 where A is the gain of the
amplifier and β is the feedback factor (gain).The unity gain means signal is in phase. ( If the
signal is 1800 out of phase and gain will be -1).
A Wien bridge oscillator is a type of electronic oscillator that generates sine waves. It
cangenerated a large range of frequencies. The oscillator is based on a bridge circuit
originally developed by Max Wien in 1891 for the measurement of impedances. The bridge
comprises four resistors and two capacitors. The oscillator can also be viewed as a positive
gain amplifier combined with a bandpass filter that provides positive feedback. Automatic
gain control, intentional non-linearity and incidental non-linearity limit the output amplitude
Vignan Institute of Technology and Science, EEE Dept., Page 61
 B.Tech II Year I Sem, ANALOG ELECTRONICS LAB MANUAL

in various implementations of the oscillator.

The circuit shown to the right depicts a common implementation of the oscillator, with
automatic gain control, using modern components. Under the condition that R1=R2=R and
C1=C2=C, the frequency of oscillation is given by:

𝒇=1/𝟐П𝑹𝑪
and the condition of stable oscillation is given by 𝑹𝒃=𝑹𝒇/𝟐

CIRCUIT DIAGRAM:

MODEL GRAPH:

Vignan Institute of Technology and Science, EEE Dept., Page 62

Vignan Institute of Technology and Science Department of Electrical and Electronics Engineering

PROCEDURE:

1. Identify the pin details of BC107 Transistor (or equivalent silicon Transistor such
as BC108/547) and test it using a millimeter. Set up the circuit on breadboard as
shown in figure.
2. A 12V Supply Voltage is given by using Regulated power supply and output is
taken from collector of the Transistor.
3. By using CRO the output time period and voltage are noted.
4. Plot all the readings curves on a single graph sheet.

RESULT:

63
Vignan Institute of Technology and Science Department of Electrical and Electronics Engineering

64