University of Anbar Lab.

Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Experiment No.7
Characteristics of Bipolar Junction
Object Transistors
The purpose of this experiment is to determine and graph the input and output
characteristics of a bipolar junction transistor (BJT) in the common emitter
configuration, and to measure its h-parameters at a given DC bias point.
Required Parts and Equipment's
1. Electronic Test Board. (M90)
2. Dual DC Power Supply.
3. Digital Multi-meters.
4. NPN Transistors (BC337).
5. Resistors 33kΩ,120Ω
6. Leads and Wires.
Theory
A bipolar junction transistor (BJT) is a three-terminal device capable of
amplifying a small AC signal. The three terminals are called the base, emitter, the
collector. BJTs consist of a very thin base material sandwiched between two of the
opposite type materials. Bipolar transistors are available in two forms, either NPN
or PNP. The middle letter indicates the type of material used for the base, while
the outer letters indicate the emitter and collector terminals. The emitter is heavily
doped, the base is lightly doped, and the collector is intermediately doped. Fig.1
shows BJT transistor construction and symbols.
As shown in Fig.1, two P-N junctions are formed when a transistor is made, the
junction between the base and emitter, and the junction between the base and
collector. These two junctions form two diodes, the emitter-base diode and the
collector-base diode.
There are three configurations in connecting the BJT depending on which of the
three terminals is used as the common terminal. These configurations are the
common emitter (CE), the common base (CB), and the common collector (CC).
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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Figure 1: Types of BJT Transistors

Common emitter configuration is most effective because of its high current gain,
high voltage gain and power gain. In common emitter configuration, emitter
terminal is made common to both input and output circuits as shown in Fig.2. Input
junction (Emitter-Base Junction) is forward biased and output junction (Collector-
Base Junction) is reverse biased so that the input junction is having low resistance
(since it is forward biased) and the output junction is having high resistance (since
it is reverse biased).

Figure 2: Common Emitter Transistor Configuration

Bipolar transistors are primarily current amplifiers. In the CE configuration, a

small base current is amplified to a larger current in the collector circuit. The
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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

ratio of the DC collector current 𝐼𝐶 to the DC base current 𝐼𝐵 is called the DC beta
(𝛽𝑑𝑐 ) of the transistor. Thus:
𝐼𝐶
𝛽𝑑𝑐 =
𝐼𝐵
Typical values of 𝛽𝑑𝑐 range from 20 to 250 or higher. 𝛽𝑑𝑐 is usually designated as
ℎ𝐹𝐸 in transistor datasheets. Hence:
ℎ𝐹𝐸 =𝛽𝑑𝑐
Another useful parameter in bipolar transistors is the DC alpha (𝛼𝑑𝑐 ). It is defined
as the ratio of the DC collector current 𝐼𝐶 to the DC emitter current 𝐼𝐸 . Thus:
𝐼𝐶
𝛼𝑑𝑐 =
𝐼𝐸
Typically, values of αdc range from 0.95 to 0.99, but αdc is always less than 1.
• Common Emitter Input and Output Characteristics
Two sets of characteristics are necessary to describe fully the behavior of the
common emitter configuration: the input (or base) characteristics, and the output
(or collector) characteristics. Input characteristics of a transistor are curves
showing the variation of input (base) current IB as a function of input (base-
emitter) voltage 𝑉𝐵𝐸 , when the output (collector-emitter) voltage VCE is kept
constant. Fig.3 depicts the input characteristics for a typical transistor.

Figure 3: Typical Input Characteristics of a Silicon NPN Transistor in the Common Emitter Configuration

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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

As shown from Fig.3, the input characteristics are similar to that of a forward-
biased diode since the emitter-base junction is forward-biased. Note also the slight
shift in the curves when increasing 𝑉𝐶𝐸 .
Output characteristics of a transistor are curves showing the variation of the output
current 𝐼𝐶 as a function of output voltage 𝑉𝐶𝐸 , when the input current 𝐼𝐵 is kept
constant. Fig.4 depicts the output characteristics for a typical transistor.

Figure 4: Typical Output Characteristics of a Silicon NPN Transistor in the Common Emitter Configuration

As shown from Fig.4, for very small values of 𝑉𝐶𝐸 the collector-base junction is
forward biased and the transistor is in the saturation region. In this portion of the
curves, 𝐼𝐶 is increased linearly with 𝑉𝐶𝐸 . As 𝑉𝐶𝐸 increases, the collector-base
junction becomes reverse-biased and the transistor goes into the active region. In
this portion of the curves, 𝐼𝐶 remains essentially constant (for a given value of 𝐼𝐵 )
as 𝑉𝐶𝐸 continues to increase. Actually, 𝐼𝐶 increases very slightly as 𝑉𝐶𝐸 increases
due to widening of the collector-base depletion region. For this portion of the
characteristic curves, the value of 𝐼𝐶 is only determined by the expression:
𝐼𝐶 = 𝛽𝑑𝑐 𝐼𝐵
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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Fig.5 shows a common emitter circuit that can be used to generate the input and
output characteristic curves. The purpose of RB in this circuit is to limit the base
current to a safe level.

Figure 5: Test Circuit used to generate the Common Emitter Input and Output Characteristics

• Transistor h-parameters
In order to analyze transistor amplifier operation, an AC small signal model for the
BJT is required. The most widely used equivalent circuit model to describe the
transistor behavior at low and mid-band frequencies is the h-parameter model. For
the common emitter configuration, when the transistor is considered as a linear
two port network, the input small signal AC voltage (𝑣𝑏𝑒 ) and the output small
signal AC current (𝑖𝑐 ) can be expressed in terms of the input current (𝑖𝑏 ) and output
voltage (𝑣𝑐𝑒 ) by the following equations:
𝑣𝑏𝑒 = ℎ𝑖𝑒 . 𝑖𝑏 + ℎ𝑟𝑒 . 𝑣𝑐𝑒
𝑖𝑐 = ℎ𝑓𝑒 . 𝑖𝑏 + ℎ𝑜𝑒 . 𝑣𝑐𝑒
The common emitter hybrid parameters in equation 4 are defined as:
𝑣𝑏𝑒
ℎ𝑖𝑒 = input resistance = │𝑣𝑐𝑒=0
𝑖𝑏
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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

𝑣𝑏𝑒
ℎ𝑟𝑒 = reverse transfer voltage ratio = │𝑖𝑏=0
𝑣𝑐𝑒
𝑖
ℎ𝑓𝑒 = forward transfer current ratio = 𝑐 │𝑣𝑐𝑒=0
𝑖𝑏
𝑖𝑐
ℎ𝑜𝑒 = output conductance = │𝑖𝑏=0
𝑣𝑐𝑒

The unit of ℎ𝑖𝑒 is the Ohm, and that of ℎ𝑜𝑒 is the Siemens, while hfe and hre are
unit-less. This versatility in the units is the reason behind the name of the hybrid
parameters.
Fig.6 shows the small-signal AC equivalent circuit of the transistor in the common
emitter configuration.

Figure 6: Common Emitter Transistor Hybrid Equivalent Circuit Model

The h-parameters of the transistor can be determined graphically from its input and
output characteristics. The parameters ℎ𝑖𝑒 and hre are determined from the input
(or base) characteristics, while the parameters ℎ𝑓𝑒 and ℎ𝑜𝑒 are obtained from the
output (or collector) characteristics.
Fig.7 presents the method of finding the input resistance ℎ𝑖𝑒 graphically at the
specified Q-point of the transistor. It should be noted that h-parameters depend on
the specific operating point (Q-Point) of the transistor. As observed from the
figure, ℎ𝑖𝑒 is determined from the equation:
∆𝑉𝐵𝐸
ℎ𝑖𝑒 = │
∆𝐼𝐵 𝑉𝐶𝐸=𝑐𝑜𝑛𝑠𝑡.

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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

The small increments ∆𝐼𝐵 and ∆𝑉𝐵𝐸 should be taken around the Q-point as
depicted in Fig.7.
The parameter ℎ𝑟𝑒 can also be obtained from the input characteristics as shown in
Fig.8. In this case:
∆𝑉𝐵𝐸
ℎ𝑟𝑒 = │
∆𝑉𝐶𝐸 𝐼𝐵=𝑐𝑜𝑛𝑠𝑡.

The base current 𝐼𝐵 should be taken as the Q-point operating value 𝐼𝐵𝑄 . The
parameter ℎ𝑟𝑒 is very low and can be ignored in most practical cases.

Figure 7: Graphical Determination of ℎ𝑖𝑒 from the Input Characteristics

The small signal current gain ℎ𝑓𝑒 can be determined from the output characteristics
of the transistor as shown in Fig.9. As shown from this figure, ℎ𝑓𝑒 can be found
from:
∆𝐼𝐶
ℎ𝑓𝑒 = │
∆𝐼𝐵 𝑉𝐶𝐸=𝑐𝑜𝑛𝑠𝑡.
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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

Actually, ℎ𝑓𝑒 represents the AC beta of the transistor:

ℎ𝑓𝑒 = 𝛽𝑎𝑐

Figure 9: Graphical Determination of ℎ𝑓𝑒 from the Output Characteristics

If 𝐼𝐶 is plotted against 𝐼𝐵 for a given 𝑉𝐶𝐸 , then an approximate linear relation can
be obtained in the active region of the transistor as shown in Fig.10.

Figure 10: 𝐼𝐶 versus 𝐼𝐵 for a Typical Transistor in the Active Region

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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

The output conductance ℎ𝑜𝑒 can also be gotten from the output characteristics of
the transistor at a specific Q-point as shown in Fig.11. In this case:
∆𝐼𝐶
ℎ𝑜𝑒 = │
∆𝑉𝐶𝐸 𝐼𝐵=𝑐𝑜𝑛𝑠𝑡.

Figure 11: Graphical Determination of hoe from the Output Characteristics

Procedure
1. Connect the common emitter test circuit shown in Fig.12. Try to identify the
leads of the BC337 transistor correctly. It is built in a M90 package as depicted
in Fig.12.
2. Set VCE = 0V, and increase the base current IB in several steps from 0 to 100μA
by varying the DC supply voltage VBB, and record VBE in each step as shown in
Table-1.
3. Reduce VBB to 0V and set VCE = 5V by adjusting the DC power supply VCC.
Increase IB from 0 to 100μA (by slowly increasing VBB) in several steps and
record VBE. VCE should be kept constant at 5V in each step by adjusting VCC.

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University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

IB

Figure 12: Transistor Test Circuit Used to obtain the Input Characteristics
VCE = 0V VCE = 5V
I (μA) VBE(V) I (μA) VBE(V)
B B

0 0
10 10
20 20
30 30
40 40
50 50
60 60
70 70
80 80
90 90
100 100
Table-1: Recorded Data for the Transistor Input Characteristics

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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

4. Connect the circuit shown in Fig.13 to obtain the output characteristics of the
transistor.

Figure 13: Transistor Test Circuit Used to obtain the Output Characteristics
5. Start with both power supplies set to 0V. Slowly increase VBB until IB = 20μA.
Now slowly increase VCC in several steps and record VCE and IC in each step as
shown in Table-2.
6. Repeat step 5 for base current values of 40μA, and 60μA respectively. Record
data as illustrated in Table-2.
IB(μA) =20 IB(μA) =40 IB(μA) =60
VCE(V) I (mA) VCE(V) I (mA) VCE(V) I (mA)
C C C

0 0 0
0.1 0.1 0.1
0.2 0.2 0.2
0.4 0.4 0.4
0.6 0.6 0.6
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 University of Anbar Lab. Name: Electronic I
Experiment no.: 7
College of Engineering
Lab. Supervisor: Munther N. Thiyab
Dept. of Electrical Engineering

0.8 0.8 0.8

1 1 1
3 3 3
5 5 5
8 8 8
10 10 10
Table-2: Recorded Data for the Transistor Output Characteristics

Discussion
1. From the obtained data in Table-1, plot the input characteristic curves of the
transistor.
2. Sketch the three output characteristic curves of the transistor from the results
obtained in Table-2.
3. Find the h-parameters of the transistor at IB = 40μA and VCE = 5V from the
plotted input and output characteristics.
4. Use the plotted characteristic curves to determine the DC current gain βdc for
the transistor at VCE = 3.0V and base current of 20μA, 40μA, and 60μA
respectively. Repeat for VCE = 5.0V. Tabulate your results as illustrated in
Table-3 below.
5. Does the experimental data indicate that βdc is constant at all points? Does this
have any effect on the linearity of the transistor? What effect would a higher βdc
have on the characteristic curves you measured?
6. What is the maximum power dissipated in the transistor for the data taken in the
experiment?
7. Show that the DC alpha of the transistor is given by: 1+
𝛽𝑑𝑐
𝛼𝑑𝑐 =
𝛽𝑑𝑐 + 1
Compute αdc for your transistor at VCE = 5.0V and IB = 40μA.
8. What value of VCE would you expect if the base terminal of the transistor is
opened? Explain your answer.
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