Silicon N-Channel Power MOSFET ○

CS13J65 A0-G

General Description ： VDSS 650 V

CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, ID 13 A
is obtained by the super junction technology which reduces the P D(TC=25℃) 105 W
conduction loss, improve switching performance and enhance the RDS(ON)max 0.42 Ω

avalanche energy. The transistor can be used in various power

switching circuit for system miniaturization and higher efficiency.
The package type is TO-263, which accords with the RoHS
standard.
Features：
 Fast Switching
 Low Gate Charge
 Low Reverse transfer capacitances
 100% Single Pulse avalanche energy Test
 Halogen Free
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：

Symbol Parameter Rating Units

VDSS Drain-to-Source Voltage 650 V
ID Continuous Drain Current 13 A
a1
IDM Pulsed Drain Current 39 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 65 mJ
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
PD Power Dissipation 105 W
TJ，Tstg Operating Junction and Storage Temperature Range –55…+150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 650 -- -- V

ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.67 -- V/℃

VDS = 650V, VGS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =520V, VGS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=5.5A -- 0.36 0.42 Ω
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.5 4 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
gfs Forward Transconductance VDS=10V, ID =11A -- 10 -- S
Ciss Input Capacitance -- 800 --
VGS = 0V VDS = 50V
Coss Output Capacitance f = 1.0MHz -- 110 -- pF
Crss Reverse Transfer Capacitance -- 7 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 24 52
tr Rise Time ID = 11 A VDD = 300V -- 54 110
R G =25Ω ns
td(OFF) Turn-Off Delay Time -- 88 180
tf Fall Time -- 25 54
Qg Total Gate Charge -- 20 --
ID =11A VDD =520V
Qgs Gate to Source Charge VGS = 10V -- 5 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 7 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- 13 A
ISM Maximum Pulsed Current (Body Diode) -- 26 A
VSD Diode Forward Voltage IS=11A,VGS=0V -- 0.9 1.2 V
trr Reverse Recovery Time -- 400 ns
IF=I S Tj = 25℃
Qrr Reverse Recovery Charge dIF/dt=100A/us, -- 2.4 uC
VGS=0V
IRRM Reverse Recovery Current 12 A

Symbol Parameter Max. Units

Rθ JC Junction-to-Case 1.2 ℃/W
Rθ JA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, Rg=25 Ω，Vdd=50V, Start TJ=25℃
a3
：ISD =11A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃

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Characteristics Curve：

Figure.1 Maximum Forward Bias Safe Operating Area Figure.2 Maximum Power Dissipation vs Case Temperature

Figure.3 Maximum Continuous Drain Current vs Case Temperature Figure.4 Typical Output Characteristics

Figure.5 Maximum Effective Thermal Impedance , Junction to Case

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Figure.6 Typical Transfer Characteristics Figure.7 Typical Body Diode Transfer Characteristics

Figure.8 Typical Drain to Source ON Resistance Figure.9 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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Figure.10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature

Figure.12 Typical Capacitance vs Drain to Source Voltage Figure.13 Typical Gate Charge vs Gate to Source Voltage

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Test Circuit and Waveform

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Package Information
C
A
D

B
L1

G
Q
H

L2
E
F
N N
B1

Values(mm)
Items
MIN MAX
A 9.80 10.40
B 8.90 9.50
B1 0 0.10
C 4.40 4.80
D 1.16 1.37
E 0.70 0.95
F 0.30 0.60
G 1.07 1.47
H 1.30 1.80
K 0.95 1.37
L1 14.50 16.50
L2 1.60 2.30
I 0 0.2
Q 0° 8°
R 0.4
N 2.39 2.69
TO-263 Package

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The name and content of poisonous and harmful material in products

Hazardous Substance
Part’s Name
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP

Limit ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.01%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Compound
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFET is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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