W29C040

512K × 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K × 8 bits.
The device can be written (erased and programmed) in-system with a standard 5V power supply. A
12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/
program) operations with extremely low current consumption compared to other comparable 5-volt
flash memory products. The device can also be written (erased and programmed) by using standard
EPROM programmers.

FEATURES
• Single 5-volt write (erase and program) • Software and hardware data protection
operations • Low power consumption
• Fast page-write operations
− Active current: 25 mA (typ.)
− 256 bytes per page
− Standby current: 20 µA (typ.)
− Page write (erase/program) cycle: 5 mS • Automatic write (erase/program) timing with
(typ.) internal VPP generation
− Effective byte-write (erase/program) cycle • End of write (erase/program) detection
time: 19.5 µS
− Toggle bit
− Optional software-protected data write
− Data polling
• Fast chip-erase operation: 50 mS
• Latched address and data
• Two 16 KB boot blocks with lockout
• All inputs and outputs directly TTL compatible
• Typical page write (erase/program) cycles:
1K/10K (typ.) • JEDEC standard byte-wide pinouts
• Read access time: 90/120 nS • Available packages: TSOP and PLCC
• Ten-year data retention

Publication Release Date: May 1999

-1- Revision A5
 W29C040

PIN CONFIGURATIONS BLOCK DIAGRAM

VCC
VSS

CE DQ0
A
1
A
1
A A
1 1
V
C
/
W
A
1 OE OUTPUT .
2 5 6 8 C E 7 CONTROL .
WE BUFFER
4 3 2 1 32 31 30 DQ7
A7 5 29 A14

A6 6 28 A13

A5 7 27 A8
A4 8 32-pin 26 A9 A0 16K Byte Boot Block (Optional)

A3 9 PLCC 25 A11
A2 10 24 OE
.
A1 11 23 A10
. CORE
A0 12 22 CE
DECODER ARRAY
13 21 DQ7
DQ0
14 15 16 17 18 19 20
.
16K Byte Boot Block (Optional)
A18
D D G D D D D
Q Q N Q Q Q Q
1 2 D 3 4 5 6

A11 1 32 OE
2 A10
A9
A8 3
31
30 CE PIN DESCRIPTION
A13 4 29 DQ7
A14 5 28 DQ6
A17 6
7
27
26
DQ5
DQ4
SYMBOL PIN NAME
WE
VCC 8
32-pin 25 DQ3
A18 9 TSOP 24 GND A0−A18 Address Inputs
A16 10 23 DQ2
A15 11 22 DQ1
A12 12 21 DQ0 DQ0−DQ7 Data Inputs/Outputs
A7 13 20 A0
14 19 A1
A6
A5 15 18 A2 CE Chip Enable
A4 16 17 A3

OE Output Enable

WE Write Enable
VCC Power Supply
GND Ground

-2-
 W29C040

FUNCTIONAL DESCRIPTION
Read Mode
The read operation of the W29C040 is controlled by CE and OE , both Chip of which have to be low
for the host to obtain data from the outputs. CE is used for device selection. When CE is high, the
chip is de-selected and only standby power will be consumed. OE is the output control and is used to
gate data from the output pins. The data bus is in high impedance state when either CE or OE is
high.
Refer to the read cycle timing waveforms for further details.

Page Write Mode

The W29C040 is written (erased/programmed) on a page basis. Every page contains 256 bytes of
data. If a byte of data within a page is to be changed, data for the entire page must be loaded into the
device. Any byte that is not loaded will be erased to "FF hex" during the write operation of the page.
The write operation is initiated by forcing CE and WE low and OE high. The write procedure
consists of two steps. Step 1 is the byte-load cycle, in which the host writes to the page buffer of the
device.
Step 2 is an internal write (erase/program) cycle, during which the data in the page buffers are
simultaneously written into the memory array for non-volatile storage.
During the byte-load cycle, the addresses are latched by the falling edge of either CE or WE ,
whichever occurs last. The data are latched by the rising edge of either CE or WE , whichever
occurs first. If the host loads a second byte into the page buffer within a byte-load cycle time (TBLC) of
200 µS after the initial byte-load cycle, the W29C040 will stay in the page load cycle. Additional bytes
can then be loaded consecutively. The page load cycle will be terminated and the internal write
(erase/program) cycle will start if no additional byte is loaded into the page buffer. A8 to A18 specify
the page address. All bytes that are loaded into the page buffer must have the same page address.
A0 to A7 specify the byte address within the page. The bytes may be loaded in any order; sequential
loading is not required.
In the internal write cycle, all data in the page buffers, i.e., 256 bytes of data, are written
simultaneously into the memory array. The typical write (erase/program) time is 5 mS. The entire
memory array can be written in 10.4 seconds. Before the completion of the internal write cycle, the
host is free to perform other tasks such as fetching data from other locations in the system to prepare
to write the next page.

Software-protected Data Write

The device provides a JEDEC-approved optional software-protected data write. Once this scheme is
enabled, any write operation requires a three-byte command sequence (with specific data to a
specific address) to be performed before the data load operation. The three-byte load command
sequence begins the page load cycle, without which the write operation will not be activated. This
write scheme provides optimal protection against inadvertent write cycles, such as cycles triggered by
noise during system power-up and power-down.
The W29C040 is shipped with the software data protection enabled. To enable the software data
protection scheme, perform the three-byte command cycle at the beginning of a page load cycle. The
device will then enter the software data protection mode, and any subsequent write operation must be
preceded by the three-byte command sequence cycle. Once enabled, the software data protection

Publication Release Date: May 1999

-3- Revision A5
 W29C040

will remain enabled unless the disable commands are issued. A power transition will not reset the
software
data protection feature. To reset the device to unprotected mode, a six byte command sequence is
required. For information about specific codes, see the Command Codes for Software Data
Protection in the Table of Operating Modes. For information about timing waveforms, see the timing
diagrams below.

Hardware Data Protection

The integrity of the data stored in the W29C040 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) VCC Power Up/Down Detection: The write operation is inhibited when VCC is less than 2.5V.

(3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) VCC power-on delay: When VCC has reach its sense level, the device will automatically time-out
10 mS before any write (erase/program) operation.

Chip Erase Modes

The entire device can be erased by using a six-byte software command code. See the Software Chip
Erase Timing Diagram.

Boot Block Operation

There are two boot blocks (16K bytes each) in this device, which can be used to store boot code. One
of them is located in the first 16K bytes and the other is located in the last 16K bytes of the memory.
The first 16K or last 16K of the memory can be set as a boot block by using a seven-byte command
sequence.
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set
the data for the designated block cannot be erased or programmed (programming lockout); other
memory locations can be changed by the regular programming method. Once the boot block
programming lockout feature is activated, the chip erase function will be disabled. In order to detect
whether the boot block feature is set on the two 16K blocks, users can perform a six-byte command
sequence: enter the product identification mode (see Command Codes for Identification/Boot Block
Lockout Detection for specific code), and then read from address "00002 hex" (for the first 16K bytes)
or "7FFF2 hex" (for the last 16K bytes). If the output data is "FF hex," the boot block programming
lockout feature is activated; if the output data is "FE hex," the lockout feature is inactivated and the
block can be programmed.
To return to normal operation, perform a three-byte command sequence to exit the identification
mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.

Data Polling (DQ7)- Write Status Detection

The W29C040 includes a data polling feature to indicate the end of a write cycle. When the
W29C040 is in the internal write cycle, any attempt to read DQ7 of the last byte loaded during the
page/byte-load cycle will receive the complement of the true data. Once the write cycle is completed.
DQ7 will show the true data. See the DATA Polling Timing Diagram.

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 W29C040

Toggle Bit (DQ6)- Write Status Detection

In addition to data polling, the W29C040 provides another method for determining the end of a write
cycle. During the internal write cycle, any consecutive attempts to read DQ6 will produce alternating
0's and 1's. When the write cycle is completed, this toggling between 0's and 1's will stop. The device
is then ready for the next operation. See Toggle Bit Timing Diagram.

Product Identification
The product ID operation outputs the manufacturer code and device code. Programming equipment
automatically matches the device with its proper erase and programming algorithms.
The manufacturer and device codes can be accessed by software or hardware operation. In the
software access mode, a six-byte command sequence can be used to access the product ID. A read
from address "00000 hex" outputs the manufacturer code "DA hex." A read from address "00001 hex"
outputs the device code "46 hex." The product ID operation can be terminated by a three-byte
command sequence.

In the hardware access mode, access to the product ID is activated by forcing CE and OE low, WE
high, and raising A9 to 12 volts.

TABLE OF OPERATING MODES

Operating Mode Selection
Operating Range: 0 to 70° C (Ambient Temperature), VDD = 5V ±10%, VSS = 0V, VHH = 12V

MODE PINS
CE OE WE ADDRESS DQ.
Read VIL VIL VIH AIN Dout
Write VIL VIH VIL AIN Din
Standby VIH X X X High Z
Write Inhibit X VIL X X High Z/DOUT
X X VIH X High Z/DOUT
Output Disable X VIH X X High Z
Product ID VIL VIL VIH A0 = VIL; A1−A18 = VIL; Manufacturer Code DA
A9 = VHH (Hex)
VIL VIL VIH A0 = VIH; A1−A18 = VIL; Device Code
A9 = VHH 46 (Hex)

Publication Release Date: May 1999

-5- Revision A5
 W29C040

Command Codes for Software Data Protection

BYTE SEQUENCE TO ENABLE PROTECTION TO DISABLE PROTECTION
ADDRESS DATA ADDRESS DATA
0 Write 5555H AAH 5555H AAH
1 Write 2AAAH 55H 2AAAH 55H
2 Write 5555H A0H 5555H 80H
3 Write - - 5555H AAH
4 Write - - 2AAAH 55H
5 Write - - 5555H 20H

Software Data Protection Acquisition Flow

Software Data Protection Software Data Protection

Enable Flow Disable Flow

Load data AA Load data AA

to to
address 5555 address 5555

Load data 55 Load data 55

to to
address 2AAA address 2AAA

Load data A0 Load data 80

to to
address 5555 address 5555

Load data AA
Sequentially load to
(Optional page-load up to 256 bytes
operation) address 5555
of page data

Load data 55
to
Pause 10 mS address 2AAA

Exit Load data 20

to
address 5555

Pause 10 mS

Exit

Notes for software program code:

Data Format: DQ7−DQ0 (Hex)
Address Format: A14−A0 (Hex)

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 W29C040

Command Codes for Software Chip Erase

BYTE SEQUENCE ADDRESS DATA
0 Write 5555H AAH
1 Write 2AAAH 55H
2 Write 5555H 80H
3 Write 5555H AAH
4 Write 2AAAH 55H
5 Write 5555H 10H

Software Chip Erase Acquisition Flow

Load data AA
to
address 5555

Load data 55
to
address 2AAA

Load data 80
to
address 5555

Load data AA
to
address 5555

Load data 55
to
address 2AAA

Load data 10
to
address 5555

Pause 50 mS

Exit
Notes for software chip erase:
Data Format: DQ7−DQ0 (Hex)
Address Format: A14−A0 (Hex)

Publication Release Date: May 1999

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 W29C040

Command Codes for Product Identification and Boot Block Lockout Detection
BYTE ALTERNATE PRODUCT (7) SOFTWARE PRODUCT SOFTWARE PRODUCT
SEQUENCE IDENTIFICATION/BOOT BLOCK IDENTIFICATION/BOOT BLOCK IDENTIFICATION/BOOT BLOCK
LOCKOUT DETECTION ENTRY LOCKOUT DETECTION ENTRY LOCKOUT DETECTION EXIT
ADDRESS DATA ADDRESS DATA ADDRESS DATA
0 Write 5555 AA 5555H AAH 5555H AAH
1 Write 2AAA 55 2AAAH 55H 2AAAH 55H
2 Write 5555 90 5555H 80H 5555H F0H
3 Write - - 5555H AAH - -
4 Write - - 2AAAH 55H - -
5 Write - - 5555H 60H - -
Pause 10 µS Pause 10 µS Pause 10 µS

Software Product Identification and Boot Block Lockout Detection Acquisition Flow
Product Product Product
Identification Identification Identification
Entry (1) and Boot Block Exit (1)
Lockout Detection
Mode (3)
Load data AA
to
address 5555

(2)
Load data 55 Read address = 00000 Load data AA
to data = DA to
address 2AAA address 5555

Load data 80 (2)

Load data 55
to Read address = 00001 to
data = 46
address 5555 address 2AAA

Load data AA (4) Load data F0

Read address = 00002
to data = FF/FE to
address 5555 address 5555

Load data 55 (5)

Read address = 7FFF2
to data = FF/FE Pause 10 uS
address 2AAA

(6)
Load data 60
to Normal Mode
address 5555

Pause 10 uS

Notes for software product identification/boot block lockout detection:

(1) Data Format: DQ7−DQ0 (Hex); Address Format: A14−A0 (Hex)
(2) A1−A18 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH.
(3) The device does not remain in identification and boot block (address 0002 Hex/7FFF2 Hex respond to first 16K/last 16K) lockout detection
mode if power down.
(4), (5) If the output data is "FF Hex," the boot block programming lockout feature is activated; if the output data "FE Hex," the lockout feature is
inactivated and the block can be programmed.
(6) The device returns to standard operation mode.
(7) This product supports both the JEDEC standard 3 byte command code sequence and original 6 byte command code sequence. For new
designs, Winbond recommends that the 3 byte command code sequence be used.

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 W29C040

Command Codes for Boot Block Lockout Enable

BYTE SEQUENCE BOOT BLOCK LOCKOUT FEATURE SET BOOT BLOCK LOCKOUT FEATURE SET
ON FIRST 16K ADDRESS BOOT BLOCK ON LAST 16K ADDRESS BOOT BLOCK
ADDRESS DATA ADDRESS DATA
0 Write 5555H AAH 5555H AAH
1 Write 2AAAH 55H 2AAAH 55H
2 Write 5555H 80H 5555H 80H
3 Write 5555H AAH 5555H AAH
4 Write 2AAAH 55H 2AAAH 55H
5 Write 5555H 40H 5555H 40H
6 Write 00000H 00H 3FFFFH FFH
Pause 10 mS Pause 10 mS

Boot Block Lockout Enable Acquisition Flow

Boot Block Lockout Boot Block Lockout
Feature Set on First 16K Feature Set on Last 16K
Address Boot Block Address Boot Block

Load data AA Load data AA

to to
address 5555 address 5555

Load data 55 Load data 55

to to
address 2AAA address 2AAA

Load data 80 Load data 80

to to
address 5555 address 5555

Load data AA Load data AA

to to
address 5555 address 5555

Load data 55 Load data 55

to to
address 2AAA address 2AAA

Load data 40 Load data 40

to to
address 5555 address 5555

Load data 00 Load data FF

to to
address 00000 address 3FFFF

Pause 10 mS Pause 10 mS

Notes for boot block lockout enable:

1. Data Format: DQ7−DQ0 (Hex)
2. Address Format: A14−A0 (Hex)
3. If you have any questions about this command sequence, please contact the local distributor or Winbond Electronics Corp.

Publication Release Date: May 1999

-9- Revision A5
 W29C040

DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V

Voltage on A9 and OE Pin to Ground Potential -0.5 to 12.5 V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.

Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)

PARAMETER SYM. TEST CONDITIONS LIMITS UNIT

MIN. TYP. MAX.
Power Supply Current ICC CE = OE = VIL, WE = VIH, - - 50 mA
all DQs open
Address inputs = VIL/VIH,
at f = 5 MHz
Standby VDD Current ISB1 CE = VIH, all DQs open - 2 3 mA
(TTL input) Other inputs = VIL/VIH
Standby VDD Current ISB2 CE = VDD -0.3V, all DQs - 20 100 µA
(CMOS input) open

Input Leakage Current ILI VIN = GND to VDD - - 10 µA

Output Leakage Current ILO VIN = GND to VDD - - 10 µA

Input Low Voltage VIL - - - 0.8 V

Input High Voltage VIH - 2.0 - - V

Output Low Voltage VOL IOL = 2.0 mA - - 0.45 V

Output High Voltage VOH1 IOH = -400 µA 2.4 - - V

Output High Voltage VOH2 IOH = -100 µA; VCC = 4.5V 4.2 - - V
CMOS

- 10 -
 W29C040

Power-up Timing
PARAMETER SYMBOL TYPICAL UNIT
Power-up to Read Operation TPU. READ 100 µS
Power-up to Write Operation TPU. WRITE 10 mS

CAPACITANCE
(VDD = 5.0V, TA = 25° C, f = 1 MHz)

PARAMETER SYMBOL CONDITIONS MAX. UNIT

DQ Pin Capacitance CDQ VDQ = 0V 12 pF
Input Pin Capacitance CIN VIN = 0V 6 pF

AC CHARACTERISTICS
AC Test Conditions
(VDD = 5.0V ±10% for 90,120 nS

PARAMETER CONDITIONS
Input Pulse Levels 0V to 3V
Input Rise/Fall Time <5 nS
Input/Output Timing Level 1.5V/1.5V
Output Load 1 TTL Gate and CL = 100 pF for 90/120/150 nS

AC Test Load and Waveform

+5V

1.8KΩ

DOUT

100 pF for 90/120 nS 1.3KΩ

(Including Jig and Scope)

Input Output
3V
1.5V 1.5V
0V
Test Point Test Point

Publication Release Date: May 1999

- 11 - Revision A5
 W29C040

AC Characteristics, continued

Read Cycle Timing Parameters

(VDD = 5.0V ±10% for 90,120 and 150 nS, VSS = 0V, TA = 0 to 70° C)

PARAMETER SYM. W29C040-90 W29C040-12 UNIT

MIN. MAX. MIN. MAX.
Read Cycle Time TRC 90 - 120 - nS
Chip Enable Access Time TCE - 90 - 120 nS
Address Access Time TAA - 90 - 120 nS
Output Enable Access Time TOE - 40 - 50 nS
CE High to High-Z Output TCHZ - 25 - 30 nS

OE High to High-Z Output TOHZ - 25 - 30 nS

Output Hold from Address change TOH 0 - 0 - nS

Byte/Page-write Cycle Timing Parameters

PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Write Cycle (erase and program) TWC - - 10 mS
Address Setup Time TAS 0 - - nS
Address Hold Time TAH 50 - - nS
WE and CE Setup Time TCS 0 - - nS

WE and CE Hold Time TCH 0 - - nS

OE High Setup Time TOES 0 - - nS

OE High Hold Time TOEH 0 - - nS

CE Pulse Width TCP 70 - - nS

WE Pulse Width TWP 70 - - nS

WE High Width TWPH 100 - - nS

Data Setup Time TDS 50 - - nS
Data Hold Time TDH 0 - - nS
Byte Load Cycle Time TBLC - - 150 µS
Notes:
All AC timing signals observe the following guideline for determining setup and hold times:
(1) High level signal's reference level is VIH
(2) Low level signal's reference level is VIL

- 12 -
 W29C040

AC Characteristics, continued

DATA Polling Characteristics (1)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Data Hold Time TDH 10 - - nS
OE Hold Time TOEH 10 - - nS

OE to Output Delay (2) TOE - - - nS

Write Recovery Time TWR 0 - - nS
Notes:
(1) These parameters are characterized and not 100% tested.
(2) See TOE spec in A.C. Read Cycle Timing Parameters.

Toggle Bit Characteristics (1)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Data Hold Time TDH 10 - - nS
OE Hold Time TOEH 10 - - nS

OE to Output Delay (2) TOE - - - nS

OE High Pulse TOEHP 150 - - nS

Write Recovery Time TWR 0 - - nS
Notes:
(1) These parameters are characterized and not 100% tested.
(2) See TOE spec in A.C. Read Cycle Timing Parameters.

TIMING WAVEFORMS
Read Cycle Timing Diagram

TRC

Address A18-0

TCE
CE

T OE
OE

T OHZ
VIH
WE

TOH T CHZ High-Z

High-Z
DQ7-0 Data Valid Data Valid

T AA

Publication Release Date: May 1999

- 13 - Revision A5
 W29C040

Timing Waveforms, continued

WE Controlled Write Cycle Timing Diagram

TWC
TAS TAH

Address A18-0

CE TCS TCH

TOES T OEH
OE

TWP TWPH
WE

TDS

DQ7-0 Data Valid

TDH
Internal write starts

CE Controlled Write Cycle Timing Diagram

T AS T WC
T AH

Address A18-0

T WPH
T CP
CE

T OES T OEH

OE TCS TCH

WE

T DS
DQ7-0 High Z
Data Valid

T DH
Internal Write Starts

- 14 -
 W29C040

Timing Waveforms, continued

Page Write Cycle Timing Diagram

TWC

Address A18-0

DQ7-0

CE

OE
TWPH TBLC
TWP
WE

Byte 0 Byte 1 Byte 2 Byte N-1

Byte N
Internal Write Start

DATA Polling Timing Diagram

Address A18-0

WE

CE

TOEH

OE
TDH
TWR
HIGH-Z
TOE
DQ7

Publication Release Date: May 1999

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 W29C040

Timing Waveforms, continued

Toggle Bit Timing Diagram

WE

CE
TOEH

OE
TDH
TOE TWR
HIGH-Z
DQ6

Page Write Timing Diagram Software Data Protection Mode

TWC
Three-byte sequence for Byte/page load
cycle starts
software data protection mode

Address A18-0 5555 2AAA 5555

DQ7-0 AA 55 A0

CE

OE TBLC
TWP
WE
TWPH

Byte N
SW0 SW1 SW2 Byte 0 Byte N-1
(Last Byte)
Internal write starts

- 16 -
 W29C040

Timing Waveforms, continued

Reset Software Data Protection Timing Diagram

Six-byte sequence for resetting

software data protection mode TWC

Address A18-0 5555 2AAA 5555 5555 2AAA 5555

DQ7-0 AA 55 80 AA 55 20

CE

OE
TWP TBLC
WE
TWPH

SW0 SW1 SW2 SW3 SW4 SW5

Internal programming starts

5 Volt-only Software Chip Erase Timing Diagram

Six-byte code for 5V-only software

TWC
chip erase

Address A18-0 5555 2AAA 5555 5555 2AAA 5555

DQ7-0 AA 55 80 AA 55 10

CE

OE
TWP TBLC
WE
TWPH

SW0 SW1 SW2 SW3 SW4 SW5

Internal erasing starts

Publication Release Date: May 1999

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 W29C040

ORDERING INFORMATION
PART NO. ACCESS POWER STANDBY PACKAGE CYCLING
TIME SUPPLY CURRENT VDD CURRENT
(nS) MAX. (mA) MAX. (µA)
W29C040T-90 90 50 100 Type one TSOP 1K
W29C040T-12 120 50 100 Type one TSOP 1K
W29C040P-90 90 50 100 32-pin PLCC 1K
W29C040P-12 120 50 100 32-pin PLCC 1K
W29C040T-90B 90 50 100 Type one TSOP 10K
W29C040T-12B 120 50 100 Type one TSOP 10K
W29C040P-90B 90 50 100 32-pin PLCC 10K
W29C040P-12B 120 50 100 32-pin PLCC 10K

Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.

- 18 -
 W29C040

PACKAGE DIMENSIONS
32-pin PLCC

HE
E

4 1 32 30

Dimension in Inches Dimension in mm

Symbol
Min. Nom. Max. Min. Nom. Max.
5 29
A 0.140 3.56

A1 0.020 0.50

A2 0.105 0.110 0.115 2.67 2.80 2.93

0.026 0.032 0.66 0.81

b1 0.028 0.71

0.016 0.022 0.41 0.56

b 0.018 0.46

D HD
GD c 0.008 0.010 0.014 0.20 0.25 0.35

D 0.547 0.550 0.553 13.89 13.97 14.05

0.447 0.453 11.35 11.51

E 0.450 11.43

e 0.044 0.050 0.056 1.12 1.27 1.42

GD 0.490 0.510 0.530 12.45 12.95 13.46

21
GE 0.390 0.410 0.430 9.91 10.41 10.92
13
HD 0.585 0.590 0.595 14.86 14.99 15.11

0.485 0.495 12.32 12.57

HE 0.490 12.45

L 0.075 0.090 0.095 1.91 2.29 2.41

14 20 c
y 0.004 0.10

θ 0° 10° 0° 10°

L Notes:
A2 A
1. Dimensions D & E do not include interlead flash.
2. Dimension b1 does not include dambar protrusion/intrusion.
θ e b A1
3. Controlling dimension: Inches.
Seating Plane b1 4. General appearance spec. should be based on final
y visual inspection sepc.
GE

40-pin TSOP

HD
Dimension in Inches Dimension in mm

D Symbol
Min. Nom. Max. Min. Nom. Max.
c A 0.047 1.20
1
A1 0.002 0.006 0.05 0.15

M e A2 0.037 0.039 0.041 0.95 1.00 1.05

E b 0.007 0.009 0.011 0.17 0.22 0.27

0.10 (0.004) c 0.004 0.006 0.008 0.10 0.15 0.20

D 0.72 0.724 0.728 18.3 18.4 18.5

b
E 0.390 0.394 0.398 9.90 10 10.10

HD 0.780 0.787 0.795 19.8 20.0 20.2

e 0.020 0.50
L 0.020 0.024 0.028 0.50 0.60 0.70

A L1 0.031 0.8
A2 Y
θ 0.000 0.004 0.00 0.10
L A1
Y θ 0 3 5 0 3 5
L1
Controlling dimension: Millimeters

Publication Release Date: May 1999

- 19 - Revision A5
 W29C040

VERSION HISTORY
VERSION DATE PAGE DESCRIPTION
A1 Apr. 1997 - Initial Issued
A2 Nov. 1997 4, 8 Correct the address from 3FFF2 to 7FFF2
9 Correct the boot block from 8K to 16K
15 Modify page write cycle timing diagram waveform
1, 18 Delete cycling 100K item
6 Add. pause 10 mS
7 Add. pause 50 mS
8 Correct the time from 10 mS to 10 µS
A3 June 1998 4 Correct power-on delay from 5 mS to 10 mS
11 Correct TPU.WRITE (Typ.) from 5 mS to 10 mS
A4 Oct. 1998 20 Correct 40-pin TSOP package drawing by 32-pin TSOP

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