ANALOG ELECTRONICS SPEC-ECE

St. PETER’S ENGINEERING COLLEGE

UGC-AUTONOMOUS

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

ANALOG ELECTRONIC CIRCUITS LABORATORY

AS22-04ES06
STUDENT LAB MANUAL

Name of the Student:

Roll Number :

Class : II B. Tech I Semester (SR22)

Branch : EEE

Prepared By : Ms. A. Srividya

: 2023-24

Opp. Forest Academy, Kompally Road, Dullapally, Maisammaguda,

Medchal (M) HYDERABAD-500100
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TABLE OF CONTENTS

S.No Title Page No

1. Institute Vision and Mission 4
2. Department Vision ,Mission, PEO, PO and PSO Statements 5,6,7
3. General Instruction /Guide lines 8
4. List of Experiments 9
5. Course Outcome 10
6. Experiments mapping with Course Outcomes 11
7. Course Outcomes Justification 12,13
8. Curricular gaps Identified , Plan of action and Revised PO 14
mapping
9. Additional Experiments
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INSTITUTE VISION

To be a renowned Educational Institution that moulds Students into Skilled Professionals fostering
Technological Development, Research and Entrepreneurship meeting the societal needs.

INSTITUTE MISSION
o IM1: Making students knowledgeable in the field of core and applied areas of Engineering to
innovate Technological solutions to the problems in the Society.
o IM2: Training the Students to impart the skills in cutting edge technologies, with the help of
relevant stakeholders.
o IM3: Fostering a conducive ambiance that inculcates research attitude, identifying promising
fields for entrepreneurship with ethical, moral, and social responsibilities.

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Department of Electronics and Communication Engineering

DEPARTMENT VISION

• To evolve the department as a center of excellence in Electronics and Communication Engineering

education in the country, to train students in contemporary technologies to meet the needs of global industry and
to develop them into skillful engineers imbued with knowledge of core as well as inter-disciplinary domains,
human values, and professional ethics.

DEPARTMENT MISSION

• DM1.To adopt pedagogical processes, facilities to meet the educational objectives and outcomes of
Emerging Technologies in the field of Electronics.
• DM2.To prepare for higher education, employment, Intellectual professional attitude, Industrial
research aptitude, lifelong learning, entrepreneurial practices, ethical values, and social concern.
• DM3.To imparts knowledge in the field of Electronics and its related areas with a focus on
developing the required competencies and virtues to meet the requirements of society.

Program Educational Objectives (PEOs)

PEO1: Graduates shall have a solid foundation and in-depth knowledge in engineering, science, and technology
for a successful career in Electronics and Communication Engineering.
PEO2: Graduates shall become effective collaborators ‘or’ innovators in efforts to address social, technical and
engineering challenges with continuous learning.
PEO3: Graduates shall engage in professional development through self-study, post-graduation, and research.
PEO4: Graduates shall have integrity, professional and ethical values, team spirit and good communication
skills
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Signature of the HOD

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PROGRAM OUTCOMES (POs)

PO1 ENGINEERING KNOWLEDGE:

Apply the knowledge of mathematics, science, engineering fundamentals, and an engineering specialization
to the solution of complex engineering problems.
PO2 PROBLEM ANALYSIS:
Identify, formulate, research literature, and analyze complex engineering problems reaching substantiated
conclusions using first principles of mathematics, natural sciences, and engineering sciences.
PO3 DESIGN/DEVELOPMENT OF SOLUTIONS:
Design solutions for complex engineering problems and design system components or processes that meet
the specified needs with appropriate consideration for the public health and safety, and the cultural, societal,
and environmental considerations.
PO4 CONDUCT INVESTIGATIONS OF COMPLEX PROBLEMS:
Use research-based knowledge and research methods including design of experiments, analysis and
interpretation of data, and synthesis of the information to provide valid conclusions.
PO5 MODERN TOOL USAGE:
Create, select, and apply appropriate techniques, resources, and modern engineering and IT tools including
prediction and modeling to complex engineering activities with an understanding of the limitations.
PO6 THE ENGINEER AND SOCIETY:
Apply reasoning informed by the contextual knowledge to assess societal, health, safety, legal and cultural
issues and the consequent responsibilities relevant to the professional engineering practice.
PO7 ENVIRONMENT AND SUSTAINABILITY:
Understand the impact of the professional engineering solutions in societal and environmental contexts, and
demonstrate the knowledge of, and need for sustainable development.
PO8 ETHICS:
Apply ethical principles and commit to professional ethics and responsibilities and norms of the engineering
practice.
PO9 INDIVIDUAL AND TEAM WORK:
Function effectively as an individual, and as a member or leader in diverse teams, and in multidisciplinary settings.
PO10 COMMUNICATION:
Communicate effectively on complex engineering activities with the engineering community and with
society at large, such as, being able to comprehend and write effective reports and design documentation,
make effective presentations, give and receive clear instructions.
PO11 PROJECT MANAGEMENT AND FINANCE:
Demonstrate knowledge and understanding of the engineering and management principles and apply these
to one’s own work, as a member and leader in a team, to manage projects and in multidisciplinary
environments. PO12 LIFE-LONG LEARNING:
Recognize the need for, and have the preparation and ability to engage in independent and life-long learning
in the broadest context of technological change.
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Programme Specific Outcomes (PSOs)

PSO1. EMERGING TECHNOLOGIES USAGE: Ability to use electronic modern IT Tools (both Hardware&
Software) for the design and analysis of complex electronic systems for additional research activities
PSO2 CAPABILITY TO COMPREHEND & APPLY: Should be able to apply the concepts and applications in
the field of communication/ networking, Signal Processing, Embedded systems and semi- conductor technology
etc. for excellent adaptability, good interpersonal skills with professional ethics and societal responsibilities.

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St. PETER’S ENGINEERING COLLEGE

UGC - Autonomous
DEPARTMENT OF ELCTRONICS AND COMMUNICATIONS

GENERAL LABORATORY INSTRUCT IONS

1. Students are advised to come to the laboratory at least 5 minutes before (to the starting time),
those who come after 5 minutes will not be allowed into the lab.
2. Plan your task properly much before to the commencement, come prepared to the lab with
the synopsis / program / experiment details.
3. Student should enter into the laboratory with:
a. Laboratory observation notes with all the details (Problem statement, Aim,
Algorithm, Procedure, Program, Expected Output, etc.,) filled in for the lab session.
b. Laboratory Record updated up to the last session experiments and other utensils (if
any) needed in the lab.
c. Proper Dress code and Identity card.
4. Sign in the laboratory login register, write the TIME-IN, and occupy the computer system allotted
to you by the faculty.
5. Execute your task in the laboratory, and record the results / output in the lab observation note
book, and get certified by the concerned faculty.
6. All the students should be polite and cooperative with the laboratory staff, must maintain the
discipline and decency in the laboratory.
7. Computer labs are established with sophisticated and high end branded systems, which should
be utilized properly.
8. Students / Faculty must keep their mobile phones in SWITCHED OFF mode during the lab sessions.
Misuse of the equipment, misbehaviors with the staff and systems etc., will attract severe punishment.
9. Students must take the permission of the faculty in case of any urgency to go out ; if anybody found
loitering outside the lab / class without permission during working hours will be treated seriously and
punished appropriately.
10. Students should LOG OFF/ SHUT DOWN the computer system before he/she leaves the lab after
completing the task (experiment) in all aspects. He/she must ensure the system / seat is kept properly.

Head of the Department Principal

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LIST OF EXPERIMENTS
S. No EXPERIMENT NAME Page No
ANALOG ELECTRONICS
CIRCUITS LAB
1 15
Draw The V-I Characteristics Of PN Junction Diode. Determine The
Static And Dynamic Resistance Of The Diode
2 Exp.no:2 Determine The Ripple Factor, % Regulation PIV And TUF of 23
The Given Rectifier With And Without Filter
3 Exp.no:3 Obtain The I/O Characteristics Of CE Configurations Of 32
BJT.Calculate H-Parameters From The Characteristics
4 43
Exp.no:4 Obtain the I/O characteristics of CB configuration of
BJT.Calculate h-parameters from the characteristics
5 53
Exp.no:5 Obtain the drain and transfer characteristics of CD, zCS
configurations of JFET. Calculate gm,rd from the characteristics
6 59
Exp.no:6 Inverting and Non-inverting Amplifiers using Op Amps.

7 57
Exp.no:7 Adder and Subtractor using Op Amp.
8 Exp.no:8 Integrator Circuit using IC 741. 63
9 66
Exp.no:9 Differentiator circuit using Op Amp.
10 70
Exp.no:10 Current Shunt Feedback amplifier
11 76
Exp.no:11 RC Phase shift Oscillator
12 82
Exp.no:12 Class A power amplifier
ADDITIONAL EXPERIMENTS
14 Exp.no:1 Obtain the I/O characteristics of CC configurations of 88
BJT.Calculate h-parameters from the characteristics
15 Exp.no:2 Colpitts Oscillator 91

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 AS22-04ES06: ANALOG ELECTRONICS CIRCUITS LAB
II Year B.Tech. EEE I-Sem LTPC
0 02 1
Prerequisite: Analog Electronics

Course Objectives:
 To introduce components such as diodes, BJTs and FETs their switching characteristics,
applications
 Learn the concepts of high frequency analysis of transistors.
 To give understanding of various types of basic and feedback amplifier circuits such as
small signal, cascaded, large signal and tuned amplifiers.
 To introduce the basic building blocks of linear integrated circuits.
 To introduce the concepts of waveform generation and introduce some special function
ICs. Course Outcomes: At the end of this course, students will demonstrate the ability to
 Know the characteristics, utilization of various components.
 Understand the biasing techniques
 Design and analyze various rectifiers, small signal amplifier circuits.
 Design sinusoidal and non-sinusoidal oscillators.
 A thorough understanding, functioning of OP-AMP, designs OP-AMP based circuits with
linear integrated circuits.
List of Experiments

1. Draw The V-I Characteristics Of PN Junction Diode. Determine The Static And Dynamic Resistance Of The
Diode .
2. Determine The Ripple Factor, % Regulation PIV And TUF of the Given Rectifier with and without Filter
3. Obtain The I/O Characteristics of CE Configurations Of BJT.Calculate H-Parameters from the Characteristics.
4. Obtain the I/O characteristics of CB configuration of BJT. Calculate h-parameters from the characteristics.
5. Obtain the drain and transfer characteristics of CD,CS configurations of JFET. Calculate g m,rd from the
characteristics Adder and subtractor using Op Amp.
6. Inverting and Non-inverting Amplifiers using Op Amps.
7. Adder and Subtractor using Op Amp.
8. Integrator Circuit using IC 741.
9. Differentiator circuit using Op Amp.
10. Current Shunt Feedback amplifier.
11. RC Phase shift Oscillator.
12. Class A power amplifier.

ADDITIONAL EXPERIMENTS

1. Obtain the I/O characteristics of CC configurations of BJT. Calculate h-parameters from the characteristics

2. Colpitts Oscillator
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

LAB NAME: ANALOG ELECTRONICS CIRCUITS LAB LAB CODE: AS22-04ES06

COURSE OUTCOME

Course out comes (CO’s):

After successful completion of the course, the student can be able to

CO No. COURSE OUT COME STATEMENT Blooms

Taxonomy
C216.1 Know the characteristics, utilization of various components. Understand
C216.2 Understand the biasing techniques Understand
C216.3 Design and analyze various rectifiers, small signal amplifier circuits. Create

C216.4 Design sinusoidal and non-sinusoidal oscillators. Create

C216.5 Design OP-AMP based circuits with linear integrated circuits. Create
Understand different types of feedbacks and its importance in Understand
C216.6 amplifiers and its types and Oscillators and its types.

Faculty In-charge HOD

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EXPERIMENT WITH CO AND PO MAPPING

LAB NAME: ANALOG ELECTRONICS CIRCUITS LAB LAB CODE: AS22-04ES06
S.No. Experiment Name CO PO, PSO Mapping
Mapping
1. PO1,PO2,PO9,PSO2
Draw The V-I Characteristics of PN Junction C216.1
Diode. Determine The Static And Dynamic
Resistance Of The Diode
2. Determine The Ripple Factor, %Regulation C216.1 PO1,PO4,PO9,PSO2
PIV And TUF Of the Given Rectifier With
And Without Filter
3. Obtain The I/O Characteristics Of Ce C216.2 PO1,PO2,PO3,PO9,PO10,PSO2
Configurations Of Bjt. Calculate H-Parameters
From The Characteristics
4. Obtain the I/O characteristics of CB C216.2 PO1,PO2,PO3,PO9,PO10,PSO2
configuration of BJT.Calculate h-parameters
from the characteristics
5. Obtain the drain and transfer characteristics of C216.2 PO1,PO2,PO3,PO9,PO10,PSO2
CD,CS configurations of JFET. Calculate gm,rd
from the characteristics
6. Inverting and Non-inverting Amplifiers using PO1,PO2,PO3,PO9,PO10,PSO2
C216.3
Op Amps.
7. PO1,PO2,PO3,PO9,PO10,PSO2
Adder and Subtractor using Op Amp. C216.5

8. Integrator Circuit using IC 741. C216.5 PO1,PO2,PO3,PO9,PO10,PSO2

9. Differentiator circuit using Op Amp. C216.6 PO1,PO2,PO3,PO9,PO10,PSO2

10. Current Shunt Feedback amplifier C216.6 PO1,PO2,PO3,PO9,PO10,PSO2

11. RC Phase shift Oscillator C216.2 PO1,PO2,PO5,PO9,PSO1,PSO2

12. Class A power amplifier C216.4 PO1,PO2,PO3,PO9,PO10,PSO2

Faculty In-charge HOD

ANALOG ELCETRONIC CIRCUITS SPEC-ECE

COURSE OUTCOME WITH PO AND PSO MAPPING

LAB NAME: ANALOG ELECTRONICS CIRCUITS LAB LAB CODE: AS22-04ES06
CO PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2
C216.1 1 2 2 1
C216.2 2 3 2 1
C216.3 1 2 3 2 1 3
C216.4 1 2 3 2 1 3
C216.5 1 2 3 2 1 3
C216.6 1 2 2 1
C216 1.5 2 3 3 2 1 2.33

CO No. Course Outcome Blooms Taxonomy

Students will able to know the characteristics, utilization of various Understand
C216.1
components.
Justification
Students will able to understand the concept of basic components and their characterizations (level
PO1
1)
PO4 Students will able to use CRO and multimeters(level2)
PO9 Student will able to function effectively as a team in order to execute the experiment (level 2)
PSO2 Student will able to able to understand the concept of basic components (level 1)

CO No. Course Outcome Blooms Taxonomy

C216.2 Students will able to Understand the biasing techniques Understand
Justification
PO1 Students will able to understand the transistor biasing techniques(level2)
PO2 Students will able to apply the concept for experimental setup(level3)
PO9 Student will able to function effectively as a team in order to execute the experiment (level 2)
PSO2 Student will able to able to understand the concept of BJT applications (level 1)

CO No. Course Outcome Blooms Taxonomy

Students will able to Design and analyze various rectifiers, small signal
C216.3 Create
amplifier circuits
Justification
Students will able to apply the knowledge of mathematics and engineering fundamentals to design
PO1
the rectifiers(level 1)
Students will able to analyze the problem and identify the requirements to design the small signal
PO2
circuit (level 2)
PO3 Student will able to design the small signal circuit (level 3)
PO9 Student will able to function effectively as a team in order to execute the experiment (level 2)
PO10 Student will able to comprehend and write the design documentation effectively (level 1)
PSO2 Student will able to able to understand the concept of signal generators (level 3)
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CO No. Course Outcome Blooms Taxonomy

Student will able to able to Design sinusoidal and non-sinusoidal
C216.4 Creating
oscillators
Justification
Students will able to apply the knowledge of mathematics and engineering fundamentals to design
PO1
the sinusoidal and non-sinusoidal oscillators etc (level 1)
Students will able to analyze the problem and identify the requirements to design the various
PO2
sinusoidal and non-sinusoidal oscillators etc (level 2)
PO3 Student will able to design the sinusoidal and non-sinusoidal oscillators(level3)
PO9 Student will able to function effectively as a team in order to execute the experiment (level 2)
PO10 Student will able to comprehend and write the design documentation effectively (level 1)
Student will able to able to understand the concept and applications of sinusoidal and non-
PSO2
sinusoidal oscillators tc (level 3)

CO No. Course Outcome Blooms Taxonomy

C216.5 Students will able to design OP-AMP based circuits with linear integrated Creating
circuits.
Justification
Students will able to apply the knowledge of mathematics and engineering fundamentals to design
PO1
the inverting and non-inverting amplifiers etc (level 1)
Students will able to analyze the problem and identify the requirements to design the various the
PO2
sequential circuits such as inverting and non-inverting amplifiers etc (level 2)
PO3 Student will able to design inverting and non-inverting amplifiers etc (level 3)
PO9 Student will able to function effectively as a team in order to execute the experiment (level 2)
PO10 Student will able to comprehend and write the design documentation effectively (level 1)
Student will able to able to understand the concept and applications of inverting and non-
PSO2
inverting amplifiers etc (level 3)

CO No. Course Outcome Blooms Taxonomy

Students will be able to understand different types of feedbacks and its
C216.6 importance in amplifiers and its types and Oscillators and its types. Understand

Justification
PO1 Students will able to understand the concept of feedback in amplifiers (level 1)
PO4 Students will able to design feedback amplifiers (level2)
PO9 Student will able to function effectively as a team in order to execute the experiment (level 2)
PSO2 Student will able to able to understand the concept of basic components (level 1)

Faculty In-charge HOD

ANALOG ELCETRONIC CIRCUITS SPEC-ECE

CURRICULAR GAPS IDENTIFIED & PLAN OF ACTION

LAB NAME: ANALOG ELECTRONICS CIRCUITS LAB LAB CODE: AS22-04ES06

S.NO. TOPICS CO MAPPING PO MAPPING PLAN OF ACTION

Design of clipper using PO1,PO2,PO5,PO9,
C216.2 Experiments will be
1
op-amp PSO1,PSO2 conducted
PO1,PO2,PO3,PO5,P
Design of clamper using
C216.4 O9,PO10, Experiments will be
2
op-amp conducted
PSO1,PSO2

REVISED COURSE OUTCOME WITH PO AND PSO MAPPING

CO PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2
C216.1 2 3 2 1
C216.2 3 2 3 2 3 1
C216.3 1 2 3 2 1 3
C216.4 1 2 3 3 2 1 3 3
C216.5 1 2 3 2 1 3
C216.6 1 2 3 2 1 3
C216

Faculty In-charge HOD

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EXPERIMENT NO.1
DRAW THE V-I CHARACTERISTICS OF PN JUNCTION DIODE. DETERMINE THE STATIC AND
DYNAMIC RESISTANCE OF THE DIODE

AIM:
1. To plot V-I Characteristics of Silicon and Germanium P-N Junction Diodes.
2. To find cut-in voltage for Silicon and Germanium P-N Junction diodes.
3. To find static and dynamic resistances in both forward and reverse biased conditions.

COMPONENTS:

Name Quantity
Diodes 1N4007(Si) 1
Diodes DR-25(Ge) 1
Resistor 1K 1

EQUIPMENT:

Name Range Quantity

Bread board 1
Regulated power supply 0-30V 1
Digital Ammeter 0-200µA/200mA 1
Digital Voltmeter 0-20V 1
Connecting Wires

THEORY:

Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into
the other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a
junction called depletion region (this region is depleted off the charge carriers). This region
gives rise to a potential barrier called Cut-in Voltage. This is the voltage across the diode at
which it starts conducting. The P-N junction can conduct beyond this potential.

The P-N junction supports uni-directional current flow. If +ve terminal of the input
supply is connected to anode (P-side) and –ve terminal of the input supply is connected the
cathode. Then diode is said to be forward biased. In this condition the height of the potential
barrier at the junction is lowered by an amount equal to given forward biasing voltage. Both the
holes from p- side and electrons from n-side cross the junction simultaneously and constitute a
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

forward current
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from n-side (injected minority current – due to holes crossing the junction and entering P- side
of the diode). Assuming current flowing through the diode to be very large, the diode can be
approximated as short- circuited switch.

If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the
input supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this
condition an amount equal to reverse biasing voltage increases the height of the potential barrier
at the junction. Both the holes on P-side and electrons on N-side tend to move away from the
junction there by increasing the depleted region. However the process cannot continue
indefinitely, thus a small current called reverse saturation current continues to flow in the diode.
This current is negligible hence the diode can be approximated as an open circuited switch.

The volt-ampere characteristics of a diode explained by the following equations

Where I = current flowing in the diode, I0 = reverse saturation current VD = Voltage applied to
the diode

VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp)

= 1(for Ge) and 2 (for Si)

It is observed that Ge diodes has smaller cut-in-voltage when compared to Si diode. The
reverse saturation current in Ge diode is larger in magnitude when compared to silicon diode.

Theoretically the dynamic resistance of a diode is determined using the following

equation:
Dynamic Resistance:
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

CIRCUIT DIAGRAMS:

Fig. 1: Forward Bias Condition

Fig. 2: Reverse Bias Condition

PROCEDURE:

FORWARD BIAS CONDITION:

1. Connect the components as shown in the Fig.1.

2. Vary the supply voltage such that the voltage across the Silicon diode varies from 0 to
0.6 V in steps of 0.1 V and in steps of 0.02 V from 0.6 to 0.76 V. In each step record the
current flowing through the diode as I.
3. Repeat the above steps for Germanium diode too but with the exception that the voltage
across the diode should be varied in steps of 0.01 V from 0.1 to 0.3 V in step-2.
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REVERSE BIAS CONDITION:

1. Connect the diode in the reverse bias as shown in the Fig.2.

2. Vary the supply voltage such that the voltage across the diode varies from 0 to 10V in
steps of 1 V. Record the current flowing through the diode in each step.
3. Repeat the above steps for Germanium diode too and record the current in each step.
4. Now plot a graph between the voltage across the diode and the current flowing through
the diode in forward and reverse bias, for Silicon and Germanium diodes on separate
graph sheets. This graph is called the V-I characteristics of the diodes.
5. Calculate the static and dynamic resistance of each diode in forward and reverse bias
using the following formulae.
Static resistance, R = V/I

Dynamic resistance, r = ∆V/∆I

OBSERVATIONS:

(a) Forward & Reverse bias characteristics of Silicon diode

Forward Bias Condition: Reverse Bias Condition:

S. No. Forward Forward S. No. Reverse Reverse

Voltage Current Voltage Current
across the through the across the through the
diode diode diode diode

Vd (Volt) Id (mA) VR (Volt) IR (µA)

(b) Forward & Reverse bias characteristics of Germanium diode

ANALOG ELCETRONIC CIRCUITS SPEC-ECE

Forward Bias Condition: Reverse Bias Condition:

S. No. Forward Forward S. No. Reverse Reverse

Voltage Current Voltage Current
across the through the across the through the
diode diode diode diode

Vd (Volt) Id (mA) Vr (Volt) IR (µA)

GRAPHS:

1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the
graph sheet.
2. Now mark +ve X-axis as Vf, -ve X-axis as VR, +ve Y-axis as If and –ve Y-axis as IR.
3. Mark the readings tabulated for Si forward biased condition in first Quadrant and
Si reverse biased condition in third Quadrant.
4. Repeat the same procedure for plotting the Germanium characteristics.
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CALCULATIONS FROM GRAPH:

Static forward Resistance Static Reverse Resistance

Dynamic Forward Resistance

Dynamic Reverse Resistance
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

PRECAUTIONS:

1. While doing the experiment do not exceed the readings of the diode. This may lead
to damaging of the diode.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.

RESULTS:

Cut in voltage = V

Static Forward Resistance =

Dynamic Forward Resistance = _

Static Reverse Resistance = _

Dynamic Reverse Resistance = _

Characteristics of Silicon & Germanium P-N Junction Diodes are studied.

CONCLUSIONS:
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+

EXPERIMENT NO.2

DETERMINE THE RIPPLE FACTOR, %REGULATION PIV AND TUF

OF THE GIVEN RECTIFIER WITH AND WITHOUT FILTER
I) Full Wave Rectifier without

Filter Aim: (i) Full wave rectifier without filter

(ii) To find its:

1. Ripple Factor
2. Efficiency
3. Percentage Regulation

Components:

Name Quantity
Diodes 1N4007(Si) 2
Resistor 1K 1

Equipments:

Name Range Quantity

CRO (0-20)MHz 1
CRO probes 2
Digital Ammeter, Voltmeter [0-200µA/200mA], [0-20V] 1
Transformer 220V/9V, 50Hz 1
Connecting Wires

Theory:

A rectifier is a circuit that converts a pure AC signal into a pulsating DC signal or a

signal that is a combination of AC and DC components.

A full wave rectifier makes use of a two diodes to carry out this conversion. It is named
so as the conversion occurs for complete input signal cycle. The full-wave rectifier consists of a
center-tap transformer, which results in equal voltages above and below the center-tap. During
the positive half cycle, a positive voltage appears at the anode of D1 while a negative voltage
appears at the anode of D2. Due to this diode D1 is forward biased it results in a current Id1
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

through the

load R. During the negative half cycle, a positive voltage appears at the anode of D2 and hence it
is forward biased. Resulting in a current Id2 through the load at the same instant a negative
voltage appears at the anode of D1 thus reverse biasing it and hence it doesn’t conduct.

Ripple Factor:

Ripple factor is defined as the ratio of the effective value of AC components to the
average DC value. It is denoted by the symbol ‘γ’.

Rectification Factor:
The ratio of output DC power to input AC power is defined as efficiency.

Percentage of Regulation:

It is a measure of the variation of AC output voltage as a function of DC output

voltage. Percentage of regulation = %

VNL = Voltage across load resistance, when minimum current flows through it.

VFL = Voltage across load resistance, when maximum current flows through.

For an ideal rectifier, the percentage regulation is 0 percent. The percentage of regulation is very
small for a practical half wave and full wave rectifier.
Peak- Inverse – Voltage (PIV):

It is the maximum voltage that has to be withstood by a diode when it is reverse biased

PIVHWR = Vm PIVFWR = 2Vm

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Comparison of Half-wave and Full-wave rectifier

S. No. Particulars Type of Rectifier

Half-Wave Full-Wave
1. No. of diodes 1 2
2. Maximum Rectification 40.6% 81.2%

𝑉𝑚
Efficiency
2𝑉𝑚
𝜋 𝜋
3. Vd.c (no load)

4. Ripple Factor 1.21 0.48

5. Peak Inverse Voltage Vm 2Vm
6. Output Frequency f 2f
7. Transformer Utilization Factor 0.287 0.693

Circuit Diagram:

Full Wave Rectifier (without filter):

Fig. 2: Circuit diagram of Full wave rectifier

ANALOG ELCETRONIC CIRCUITS SPEC-ECE

Procedure:

1. Connect the circuit as shown in the fig.2.

2. Connect the multimeter across the 1kΩ load.

3. Measure the AC and DC voltages by setting multimeter to ac and dc mode respectively.
4. Now calculate the ripple factor using the following formula.
V
Ripple factor ( ) = AC
VDC

5. Connect the CRO channel-1 across input and channel-2 across output i.e load and
Observe the input and output Waveforms.
6. Now calculate the peak voltage of input and output waveforms and also the frequency.
7. Plot different graphs for wave forms and calculate ripple factor
Observations:
Full wave rectifier without Filter

Load VAC(V) VDC(V) Ripple Factor Input Signal Output Signal

𝑉𝑎𝑐
Resistance
γ= 𝑉𝑑𝑐
Vm Frequency Vm Frequency
(RL)
p-p(v) (Hz) p-p(v) (Hz)

Calculations:

1. Ripple Factor = 𝛾𝐻𝑊𝑅 =

𝑉𝐴𝐶
𝑉𝐷𝐶

𝑉𝑁𝐿
2. Percentage Regulation = × 100

−𝑉𝐹𝐿
𝑉𝐹𝐿
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Expected Waveforms:

Results:

1. Full Wave rectifier without filter characteristics are studied.

2. Ripple factor of rectifier without filter = -------------
3. Regulation of rectifier without filter = -------------
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

II) FULL WAVE RECTIFIER WITH FILTER

Aim: (i) To study the operation of a Full wave rectifier with filters
(ii) To find its:

1. Ripple Factor
2. Percentage Regulation

Components:

Name Quantity
Diodes 1N4007(Si) 2
Resistor 1K 1
Capacitor 100µF 2
Inductor (35 mH), 1

Equipment:

Name Range Quantity

CRO (0-20)MHz 1
CRO probes 2
Digital Ammeter, Voltmeter [0-200µA/200mA], [0-20V] 1
Transformer 220V/9V, 50Hz 1
Connecting Wires

Theory:

A rectifier is a circuit that converts a pure AC signal into a pulsating DC signal or a

signal that is a combination of AC and DC components. In DC supplies, a rectifier is often
followed by a filter circuit which converts the pulsating DC signal into pure DC signal by
removing the AC component. An L-section filter consists of an inductor and a capacitor
connected in the form of an inverted L. A 𝜋- section filter consists of two capacitors and one
induction in the form symbol pi.
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Ripple Factor:

Ripple factor is defined as the ratio of the effective value of AC components to the
average DC value. It is denoted by the symbol ‘γ’.

CIRCUIT DIAGRAM

Full Wave Rectifier (with π-section filter):

Fig. 2: Full wave rectifier with π-section filter

Procedure:

PART-I: Full wave rectifier with L-section filter

1. Connect the circuit as shown in the fig.2.

2. Connect the multimeter across the 1kΩ load.
3. Measure the AC and DC voltages by setting multimeter to ac and dc mode respectively.
4. Now calculate the ripple factor using the following formula.
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

V
Ripple factor ( ) = AC
VDC

5. Connect the CRO channel-1 across input and channel-2 across output i.e load and Observe
the input and output Waveforms.
6. Now calculate the peak voltage of input and output waveforms and also the frequency.
7. Plot different graphs for wave forms and calculate ripple factor

Observations:

Full wave rectifier with pi-Section filter

Load VAC(V) VDC(V) Ripple Factor Input Signal Output Signal

𝑉𝑎𝑐
Resistance
γ= 𝑉𝑑𝑐
Vm Frequency Vm Frequency
(RL)
p-p(v) (Hz) p-p(v) (Hz)

Calculations:

1. Ripple factor :

𝑉𝑎𝑐
𝐹𝑊𝑅𝜋−𝑆𝑒𝑐𝑡𝑖𝑜𝑛
𝑉𝑑𝑐
=

𝐷𝐶𝑁𝐿 −𝑉𝐷𝐶𝐹𝐿
2. Percentage Regulation = 𝑉
𝑉𝐷𝐶𝐹𝐿
× 100 %
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Expected Waveforms:

Results:

Full Wave rectifier characteristics are studied.

1. Ripple factor of Full wave with π-section filter =-------------.
2. Regulation of Full wave with π -section filter =--------------.
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

Experiment No: 3

OBTAIN THE I/O CHARACTERISTICS OF CE CONFIGURATIONS OF

BJT.CALCULATE H-PARAMETERS FROM THE CHARACTERISTICS

Aim: To plot the Characteristics of a BJT in Common Emitter Configuration.

Components:

Name Quantity
Transistor BC 107 1
Resistor 1K 1

Equipment:

Name Range Quantity

Bread Board 1
Regulated power supply 0-30V 2
Digital Ammeter 0-200mA/0-200µA 1
Digital Voltmeter 0-20V 2
Connecting Wires

Theory:

A BJT is called as Bipolar Junction Transistor and it is a three terminal active device
which has emitter, base and collector as its terminals. It is called as a bipolar device because the
flow of current through it is due to two types of carriers i.e., majority and minority carriers.

A transistor can be in any of the three configurations viz, Common base, Common
emitter and Common Collector.

The relation between , β , γ of CB, CE, CC are

𝖰 𝑎 𝟏
𝑎 = 𝖰 = =𝟏+ 𝖰 =
𝟏 +𝖰 𝟏 −𝑎 𝟏−
𝑎
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In CE configuration base will be input node and collector will be the output node .Here
emitter of the transistor is common to both input and output and hence the name common emitter
configuration.

The collector current is given as

𝐼 = 𝛽 𝐼𝐵 + 1 + 𝛽 𝐼𝐶𝑂

Where 𝐼𝐶𝑂 is called as reverse saturation current

A transistor in CE configuration is used widely as an amplifier. While plotting the

characteristics of a transistor the input voltage and output current are expressed as a function of
input current and output voltage.

i. e, VBE = f ( IB, VCE )

and IC = f ( IB, VCE )

Transistor characteristics are of two types.

Input characteristics:- Input characteristics are obtained between the input current and input
voltage at constant output voltage. It is plotted between V BE and IB at constant VCE in CE
configuration
Output characteristics:- Output characteristics are obtained between the output voltage and
output current at constant input current. It is plotted between V CE and IC at constant IB in CE
configuration
The different regions of operation of the BJT are
Emitter Junction Collector Junction Region Application

RB RB CUTT OFF OFF SWITCH

FB FB SATURATION ON SWITCH

FB RB ACTIVE AMPLIFIER

RB FB REVERSE ACTIVE ATTENUATOR

ANALOG ELCETRONIC CIRCUITS SPEC-ECE

Circuit Diagram:

Fig. 1: Input Characteristics

Fig. 2: Output Characteristics

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Pin assignment of Transistor:

Procedure:

Input Characteristics:

1) Connect the circuit as shown in fig.(1). Adjust all the knobs of the power supply to their
minimum positions before switching the supply on.
2) Adjust the VCE to 0 V by adjusting the supply VCC.
3) Vary the supply voltage VBB so that VBE varies in steps of 0.1 V from 0 to 0.5 V and
then in steps of 0.02 V from 0.5 to 0.7 V. In each step note the value of base current
IB .
4) Adjust VCE to 1, 2V and repeat step-3 for each value of VCE.
5) Plot a graph between VBE and IB for different values of VCE. These curves are called
input characteristic

Output Characteristics:

1) Connect the circuit as shown in fig. (2). All the knobs of the power supply must be at the
minimum position before the supply is switched on.
2) Adjust the base current IB to 20 µA by adjusting the supply VBB.
3) Vary the supply voltage VCC so that the voltage VCE varies in steps of 0.2 V from 0 to 2 V
and then in steps of 1 V from 2 to 10 V. In each step the base current should be adjusted
to the present value and the collector current IC should be recorded.
4) Adjust the base current at 40, 60 µA and repeat step-3 for each value of IB.
5) Plot a graph between the output voltage V CE and output current IC for different values of
the input current IB. These curves are called the output characteristics.
ANALOG ELCETRONIC CIRCUITS SPEC-ECE

Observations:
Input Characteristics

VCE = VCE =
0V 2V
VBE(V) IB(µA) VBE(V) IB(µA)

Output Characteristics

IB = IB = 40µA IB =
20µA 60µA
VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

Graph:

Fig. 3: Input Characteristics

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Fig. 4: Output Characteristics

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor.
This may lead to damage the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Results:

Input and output Characteristics of a BJT in Common Emitter Configuration are studied.
 3(B).MEASUREMENT OF h-PARAMETERS OF TRANSISTOR IN CE CONFIGURATION

AIM:

To study the input and output characteristics of a transistor in Common Emitter configuration.

Components:

S.No. Name Quantity

1 Transistor BC 107 1(One) No.
2 Resistors (1K , 100K ) 1(One) No. Each
3 Bread board 1(One) No.
Equipment:

S.No. Name Quantity

1 Dual DC Regulated Power supply (0 - 30 V) 1(One) No.
2 Digital Ammeters (0 - 200 mA, 0-200 A) 1(One) No. Each
3 Digital Voltmeter (0 - 20V) 2(Two) No.
4 Connecting wires (Single Strand)
Circuit Diagram:
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h – Parameter model of CE transistor:

Pin assignment of Transistor:

View from side of pins

View from top of casing

Operation:
The basic circuit diagram for studying input characteristics is shown in the circuit diagram. The input
is applied between base and emitter, the output is taken between collector and emitter. Here emitter of
the transistor is common to both input and output and hence the name Common Emitter Configuration.

Input characteristics are obtained between the input current and input voltage at constant output
voltage. It is plotted between VBE and IB at constant VCE in CE configuration.

Output characteristics are obtained between the output voltage and output current at constant input
current. It is plotted between VCE and IC at constant IB in CE configuration.

Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCE = 0V by varying VCC.
3. Varying VBB gradually, note down base current IB and base-emitter voltage VBE.
4. Step size is not fixed because of non linear curve. Initially vary VBB in steps of 0.1V. Once
the current starts increasing vary VBB in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCE = 5V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IB = 20 A by varying VBB.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current IC and
Collector- Emitter Voltage(VCE).
4. Repeat above procedure (step 3) for IB = 60µA, 0µA.

Observations:

Input CharacteristicsInput Characteristics

VBB (Volts) VCE = 0V VCE = 5V
VBE (Volts) IB (µA) VBE (Volts) IB (µA)
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Output Characteristics
VCC (Volts) IB = 0 µA IB = 20 µA IB = 40 µA
VCE (Volts) IC (mA) VCE (Volts) IC (mA) VCE (Volts) IC (mA)

Graph:

Input Characteristics

Output Characteristics
1.
Plot the input characteristics by taking VBE on X-axis and IB on Y-axis at a
constant VCE as a constant parameter.
2.
Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis
taking IB as a constant parameter.
Calculations from Graph:
Input Characteristics: To obtain input resistance find VBE and IB for a constant VCE on
one of the input characteristics.
Input impedance = hie = Ri = VBE / IB (VCE

is constant) Reverse voltage gain = hre = VEB /

VCE (IB = constant)

 1.
Output Characteristics: To obtain output resistance find IC and VCB at

a constant IB. Output admittance 1/hoe = Ro = IC / VCE (IB is constant)

Forward current gain = hfe = IC / IB (VCE = constant)

Inference:

1. Medium input and output resistances.

2. Smaller values if VCE, lower the cut-in-voltage.
3. Increase in the value of IE causes saturation of the transistor of an earlier voltage.

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor.
This may lead to damage the transistor.
1. Connect voltmeter and ammeter in correct polarities as shown in the circuit
diagram.
2. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

Input and Output characteristics of a Transistor in Common Emitter Configuration are

studied.
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EXP.NO:4

OBTAIN THE I/ CHARACTERISTICS OF CB CONFIGURATIONS OF BJT .CALUCULATE H-

PARAMETERS FROM THE CHARACTERISTICS
AIM:
To study the input and output characteristics of a PNP transistor in Common Base mode and
determine transistor parameters
APARATUS REQUIERED:
Circuit components/Equipments:
(i) Transistors (2 Nos: 1 PNP (CK 100 or equivalent) and 1 NPN (BC 107 or equivalent)),
(ii) Resistors (4 Nos.)
(iii)Multimeters (3 Nos.),
(iv) D.C. power supply,
(v) Connecting wires and
(vi) Breadboard.

THEORY
A Bipolar Junction Transistor, or BJT is a three terminal device having two PN-junctions
connected together in series. Each terminal is given a name to identify it and these are known as
the Emitter (E), Base (B) and Collector (C). There are two basic types of bipolar transistor
construction, NPN and PNP, which basically describes the physical arrangement of the Ptype and
N-type semiconductor materials from which they are made. Bipolar Transistors are "CURRENT"
Amplifying or current regulating devices that control the amount of current flowing through them
in proportion to the amount of biasing current applied to their base terminal. The principle of
operation of the two transistor types NPN and PNP, is exactly the same the only difference being
in the biasing (base current) and the polarity of the power supply for each type.

The symbols for both the NPN and PNP bipolar transistor are shown above along with the
direction of conventional current flow. The direction of the arrow in the symbol shows current
flow between the base and emitter terminal, pointing from the positive P-type region to the
negative N-type region, exactly the same as for the standard diode symbol. For normal operation,
the emitter-base junction is forward-biased and the collector-base junction is reverse-biased
Common Base Transistor Characteristics

In common base configuration, the base is made common to both input and output as shown
in its circuit diagram.
(1)
Input Characteristics: The input characteristics is obtained by plotting a curve between IE
and VEB keeping voltage VCB constant. This is very similar to that of a forward-biased diode
and the slope of the plot at a given operating point gives information about its input dynamic
resistance.

Input Dynamic Resistance (ri) This is defined as the ratio of change in base emitter voltage
(∆VEB) to the resulting change in emitter current (∆I E) at constant collector-emitter voltage
(VCB). This is dynamic as its value varies with the operating current in the transistor.

VEB
ri  IE
VCB

(2)
Output Characteristics: The output characteristic curves are plotted between I C and VCB,
keeping IE constant. The output characteristics are controlled by the input characteristics.
Since IC changes with IE, there will be different output characteristics corresponding to
different values of IE. These curves are almost horizontal. This shows that the output dynamic
resistance, defined below, is very high.

Output Dynamic Resistance (ro): This is defined as the ratio of change in collector-base
voltage (∆VCB) to the change in collector current (∆IC) at a constant base current IE.

VCB
ro  IC
IE

(3)
Transfer Characteristics: The transfer characteristics are plotted between the input and
output currents (IE versus IC).

Current amplification factor (α)

This is defined as the ratio of the change in collector current to the change in emitter current
at a constant collector-base voltage (VCB) when the transistor is in active state.

 ac  IC
IE
VCB

This is also known as small signal current gain and its value is very large. The ratio of IC and
IE is called αdc of the transistor. Hence,
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Circuit Diagrams:

PNP transistor in CB configuration

Procedure:

1. Note down the type number of the transistors.

2. Identify different terminals (E, B and C) and the type (PNP/NPN) of the transistors. For
any specific information refer the datasheet of the transistors.
(I) PNP Common Base (CB) characteristics
1.
Configure CB circuit using the PNP transistor as per the circuit diagram. Use R E = RC =
150 Ω.
2.
For input characteristics, first fix the voltage VCB by adjusting VCC to the minimum
possible position. Now vary the voltage VEB slowly (say, in steps of 0.05V) by varying
VEE. Measure VEB using a multimeter. If VCB varies during measurement bring it back to
the initial set value To determine IE, measure VRE across the resistor RE and use the
relation IE = VRE/RE.
3.
Repeat the above step for another value of VCB say, 2V.
4.
Take out the multimeter measuring V EB and connect in series with the output circuit to
measure IC. For output characteristics, first fix I E = 0, i.e. VRE = 0. By adjusting VCC, vary
the collector voltage VCB in steps of say 1V and measure VCB and the corresponding IC
using multimeters. After acquiring sufficient readings, bring back V CB to 0 and reduce it
further to get negative values. Vary VCB in negative direction and measure both VCB and
IC, till you get 0 current.
5.
Repeat the above step for at least 5 different values of I E by adjusting VEE. You may need
to adjust VEE continuously during measurement in order to maintain a constant IE.
6.
Plot the input and output characteristics by using the readings taken above and determine
the input and output dynamic resistance.
7.
To plot transfer characteristics, select a suitable voltage V CB well within the active region
of the output characteristics, which you have tabulated already. Plot a graph between IC
and
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the corresponding IE at the chosen voltage VCB. Determine αac from the slope of this graph.

Observations:
CB configuration:

Transistor code: _, Transistor type: (PNP/NPN)

RE = , RC = .

Table (1): Input Characteristics

Sl. No. VCB = V VCB = V

VEB (V) VRE (V) IE (mA) VEB (V) VRE (V) IE (mA)
1
2
..
..
10

Table (2): Output Characteristics

Sl. IE1 = 0 IE2 = IE3 = IE4 = IE5 =

No. VC IC VC IC VC IC VC IC VC IC
B (mA) B (mA) B (mA) B (mA) B (mA)
(V) (V) (V) (V) (V)
1
2
..
..
10
Table (3): Transfer Characteristics VCB = V

Sl. No. IE (mA) IC (mA)

1
2
3
4
5
Graphs:

Plot the input, output and transfer characteristics for each configuration.

CB configuration:

(1)
Input characteristics: Plot VEB ~ IE, for different VCB and determine the input dynamic resistance in each
case at suitable operating points.
(2)
Output characteristics: Plot VCB ~ IC, for different IE and determine the output dynamic resistance in each
case at suitable operating points in the active region.
(3)
Transfer characteristics: Plot IE ~ IC, for a fixed VCB and determine αac.

Results/Discussions:
 50
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4(B) MEASUREMENT OF h-PARAMETERS OF TRANSISTOR IN CB CONFIGURATION

AIM:

To study the input and output characteristics of a transistor in Common Base Configuration.

APPARATUS REQUIRED

Components:

S.No. Name Quantity

1 Transistor BC 107 1(One) No.
2 Resistors (1K ) 2(Two) No.
3 Bread board 1(One) No.
Equipment:

S.No. Name Quantity

1 Dual DC Regulated Power supply (0 – 30 V) 1(One) No.
2 Digital Ammeters ( 0 – 200 mA) 2(Two) No.
3 Digital Voltmeter (0-20V) 2(Two) No.
4 Connecting wires (Single Strand) 2
Circuit Diagram:
 SPEC-ECE
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h – Parameter model of CB transistor:

Pin assignment of Transistor:

View from side of pins

View from top of casing

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Theory

Operation:

Bipolar Junction Transistor (BJT) is a three terminal (emitter, base, collector) semiconductor
device. There are two types of BJTs, namely NPN and PNP. It consists of two PN junctions, namely
emitter junction and collector junction.

The basic circuit diagram for studying input characteristics is shown in the circuit diagram. The input
is applied between emitter and base, the output is taken between collector and base. Here base of the
transistor is common to both input and output and hence the name is Common Base Configuration.

Input characteristics are obtained between the input current and input voltage at constant output
voltage. It is plotted between VEE and IE at constant VCB in CB configuration.

Output characteristics are obtained between the output voltage and output current at constant input
current. It is plotted between VCB and IC at constant IE in CB configuration.

Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCB = 0V by varying VCC.
3. Varying VEE gradually, note down emitter current IE and emitter-base voltage(VEE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in steps of 0.1 V. Once
the current starts increasing vary VEE in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCB = 4V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IE = 5mA by varying VEE.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current IC and collector-
base voltage(VCB).
4. Repeat above procedure (step 3) for IE =

10mA. Repeat above procedure (step 3) for IE =

10mA. Observations:

Input Characteristics
VEE (Volts) VCB = 0V VCB = 4V
VEB (Volts) IE (mA) VEB (Volts) IE (mA)
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Output Characteristics
VCC (Volts) IE = 0mA IE = 5V IE = 10mA
VCB (Volts) IC (mA) VCB (Volts) IC (mA) VCB (Volts) IC (mA)

Graph:

1.
Plot the input characteristics for different values of VCB by taking VEE on X-axis and IE on Y-axis
taking VCB as constant parameter.
2.
Plot the output characteristics by taking VCB on X-axis and taking IC on Y-axis taking IE as a
constant parameter.

Calculations from Graph:

The h-parameters are to be calculated from the following formulae:

1.
Input Characteristics: To obtain input resistance, find VEE and IE for a constant VCB on one
of the input characteristics.

Input impedance = hib = Ri = VEE / IE (VCB = constant)

Reverse voltage gain = hrb = VEB / VCB (IE = constant)

2.
Output Characteristics: To obtain output resistance, find IC and VCB at a constant IE.

Output admitance = hob = 1/Ro = IC / VCB (IE = constant)

Forward current gain = hfb = IC / IE (VCB = constant)

 Inference:

1. Input resistance is in the order of tens of ohms since Emitter-Base Junction is forward
biased.
2. Output resistance is in order of hundreds of kilo-ohms since Collector-Base Junction
is reverse biased.
3. Higher is the value of VCB, smaller is the cut in voltage.
4. Increase in the value of IB causes saturation of transistor at small voltages.

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor. This
may lead to damage the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

Input and Output characteristics of a Transistor in Common Base Configuration are

studied.

The h-parameters for a transistor in CB configuration are:

a.
The Input resistance (hib) Ohms.
b.
The Reverse Voltage Transfer Ratio (hrb) .
c.
The Output Admittance (hob) Mhos.
d.
The Forward Current gain (hfb) .
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Experiment No: 5

OBTAIN THE DRAIN AND TRANSFER CHARACTERISTICS OF CD ,CS

CONFIGURATION OF JFET.
Aim:

1. To study Drain Characteristics and Transfer Characteristics of a

Junction Field Effect Transistor (JFET).
2. To measure drain resistance, trans-conductance and amplification factor.
Components:

Name Quantity
JFET BFW 11 1
Resistor 1M 1

Equipment:

Name Range Quantity

Bread Board 1
Regulated power supply 0-30V 1
Digital Ammeter 0-200mA 1
Digital Voltmeter 0-20V 2
Connecting Wires

Specifications:

For FET BFW11:

Gate Source Voltage VGS = -

30V Forward Gain Current IGF

= 10mA

Maximum Power Dissipation PD = 300mW

Pin assignment of FET:

Circuit Diagram:

Fig. 1: Characteristics of FET

Theory:

A JFET is called as Junction Field effect transistor. It is a unipolar device because the
flow of current through it is due to one type of carriers i.e., majority carriers where as a BJT is a
Bi - Polar device, It has 3 terminals Gate, Source and Drain. A JFET can be used in any of the
three configurations viz, Common Source, Common Gate and Common Drain. The input gate to
source junction should always be operated in reverse bias, hence input resistance Ri = ∞, IG ≈ 0.

Pinch off voltage VP is defined as the gate to source reverse bias voltage at which the
output drain current becomes zero.

In CS configuration Gate is used as input node and Drain as the output node. A JFET in
CS configuration is used widely as an amplifier. A JFET amplifier is preferred over a BJT
amplifier when the demand is for smaller gain, high input resistance and low output resistance.
Any FET operation is governed by the following equation.
The drain current equation and trans-conductance is given as
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Where 𝐼𝐷𝑆𝑆 is called as Drain to Source Saturation current & Vp is called as the Pinch off voltage

Procedure:

Transfer Characteristics:

1) Connect the circuit as shown. All the knobs of the power supply must be at the minimum
position before the supply is switched on.
2) Adjust the output voltage VDS to 4V by adjusting the supply VDD.
3) Vary the supply voltage VGG so that the voltage VGS varies in steps of -0.25 V from 0 V
onwards. In each step note the drain current I D. This should be continued till I D becomes
zero.
4) Repeat above step for VDS = 8 V.
5) Plot a graph between the input voltage VGS and output current ID for output voltage VDS in
the second quadrant. This curve is called the transfer characteristics.
Drain Characteristics:

1) Connect the circuit as shown in figure. Adjust all the knobs of the power supply to their
minimum positions before switching the supply on.
2) Adjust the input voltage VGS to 0 V by adjusting the supply VGG.
3) Vary the supply voltage VDD so that VDS varies in steps of 0.5 V from 0 to 4 V and then
in steps of 1 V from 4 to 10 V. In each step note the value of drain current ID.
4) Adjust VGS to -1 and -2 V and repeat step-3 for each value of VGS.
5) Plot a graph between VDS and ID for different values of VGS. These curves are called
drain characteristics.
6) Mark the various regions in the drain characteristics graph and calculate the
drain resistance.
Observations:

Transfer Characteristics
VDS = 4V VDS = 6V
VGS(V) ID(mA) VGS(V) ID(mA)

Drain
Characteris
tics
VGS = VGS = VGS = -2V
0V -1V
VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)
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Graph:

Transfer Characteristics Drain Characteristics

1.
Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at a constant VGS.
2.
Plot the transfer characteristics by taking VGS on X-axis and taking ID on Y-axis
at constant VDS.

Calculations from Graph:

gm at constant VDS (from transfer

characteristics). The value of gm is expressed in mho’s
(
) or Siemens(s).
Precautions:

1. While performing the experiment do not exceed the ratings of the FET. This
may lead to damage the FET.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the transistor.

Results:

1. Drain Characteristics and Transfer Characteristics of a Field Effect (FET) Transistor are studied.
2. Drain resistance, trans-conductance and amplification factor are measured.
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EPERIMENT NO.6
CALCULATE gm,rd FROM THE CHARACTERISTICS ADDER AND SUBTRACTOR USING
OP AMP

(A) OP-AMP AS AN Adder

Aim:
To design adder circuit using op-amp

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:
Op-Amp may be used to design a circuit whose output is the sum of several input signals such a circuit is
called a summing amplifier or summer. We can obtain either inverting or non inverting summer.The
circuit diagrams shows a two input inverting summing amplifier. It has two input voltages V1and V2, two
input resistors R1 ,R2 and a feedback resistor Rf.Assuming that op-amp is in ideal conditions and input bias
current is assumed to be zero, there is no voltage drop across the resistor Rcomp and hence the non inverting
input terminal is at ground potential. By taking nodal equations.

Rcom= R1//R2//Rf
= 10k//10k//10k
=3.3k V1/R1
+V2/R2 +V0/Rf =0
V0 = - [(Rf/R1) V1 +(Rf/R2) V2] And here R1
= R2 = Rf = 10K
V0 = -(V1 +V2)
Thus output is inverted and sum of input.
 CIRCUIT DIAGRAM:

PROCEDURE:

 Connect the circuit as shown in figure.

 Apply +Vcc =+15V and –Vcc = – 15V to Pin 7 and 4 of 741IC
 Apply the i/p voltage V1 and V2.
 Measure the o/p voltage using Multi meter or CRO
 Verify with theoretical value.
 Repeat the above for different values of V1 and V2

TABULAR COLOUM:

S.NO V1(VOLTAGE) V2(VOLTAGE) THEORITICAL(V0) PRATICAL(V0)

Vo=V1+V2

PRECAUTIONS:

 Check the circuit connections before switching on the power supply.

 Check the continuity of the connecting wires.

RESULT:

An adder circuit using IC741 op-amp is designed and verified

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(B).OP-AMP AS A SUBTRACTOR

Aim:
To design sub tractor circuit using op-amp

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:

The basic difference amplifier can be used as a subtractor. The signals to be subtracted are
connected to opposite polarity inputs i.e. in inverting or non-inverting terminals of the op-amp.A
circuit that finds the difference between two signals is called a subtractor. The two inputs are
applied at the inverting & non inverting terminal of op-amp. If all external resistances are equal in
value, so the gain of the amplifier is equal to 1. The output voltage of the differential amplifier
with a gain of unity is
V0=-(Rf/R1)V1+V2(R2/(R1+R2))(1+Rf/R1)
Rf=R2
V0=- (R2/R1)V1+V2(R2/(R1+R2))
((R1+R2)/R1) R1=R2
V0= -
V1+V2
V0=V2
-V1

CIRCUIT DIAGRAM:
 PROCEDURE:

1. Connect the circuit as shown in the subtractor circuit diagram

2. Apply the supply voltages of +15V to pin 7 and -15V to pin 4 of IC 741
3. Apply DC voltage from regulated power supply to inputs V1 and V2.
4. Apply V1 = 1V and Increase V2 from 0V to 5V in steps of 1V. Repeat the same for V1 = 3V and V1
=5V.
5. Note down the Vo using Voltmeter.
6. Compare theoretical and practical values.

TABULAR COLOUM:
S.NO V1(VOLTAGE) V2(VOLTAGE) THEORITICAL(V0) PRATICAL(V0)
Vo=V2-V1

PRECAUTIONS:

 Check the circuit connections before switching on the power supply.

 Check the continuity of the connecting wires.

RESULT:

An subtractor circuit using IC741 op-amp is designed.

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EXPERIMENT NO.7
INVERTING AND NON-INVERTING AMPLIFIERS USING OP AMPS.
AIM: Design and realize Inverting and Non-inverting amplifier using 741 Op-amp.

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:

An inverting amplifier using opamp is a type of amplifier using opamp where the output waveform will be
phase opposite to the input waveform. The input waveform will be amplifier by the factor Av (voltage gain
of the amplifier) in magnitude and its phase will be inverted. In the inverting amplifier circuit the signal to
be amplified is applied to the inverting input of the opamp through the input resistance R1. Rf is the
feedback resistor. Rf and Rin together determine the gain of the amplifier. Inverting operational amplifier
gain can be expressed using the equation Av = – Rf/R1. Negative sign implies that the output signal is
negated. The circuit diagram of a basic inverting amplifier using opamp is shown below.
The input and output waveforms of an inverting amplifier using opamp is shown below. The graph is drawn
assuming that the gain (Av) of the amplifier is 2 and the input signal is a sine wave. It is clear from the
graph that the output is twice in magnitude when compared to the input (Vout = Av x Vin) and phase
opposite to the input.

PROCEDURE:
1. Connect the circuit for inverting, non inverting amplifier on a breadboard.
2. Connect the input terminal of the op-amp to function generator and output terminal to CRO.
3. Feed input from function generator and observe the output on CRO.
4. Draw the input and output waveforms on graph paper.

TABULAR COLOUM:

For Inverting Amplifier:

Sl.no Rf R1 Calculated out put= (-Rf / R1 ) Vi Observed out put

For Non Inverting Amplifier:

Sl.no Rf R1 Calculated out put= (1+Rf / R1 ) Observed out put

Vi
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OUTPUT WAVEFORM:

RESULT:

Hence verified and drawn the operation and respective waveforms of inverting and non-
inverting
amplifier.
 EPERIMENT NO.8.
ADDER AND SUBTRACTOR USING OP AMP

(B) OP-AMP AS AN Adder

Aim:
To design adder circuit using op-amp

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:
Op-Amp may be used to design a circuit whose output is the sum of several input signals such a circuit is
called a summing amplifier or summer. We can obtain either inverting or non inverting summer.The
circuit diagrams shows a two input inverting summing amplifier. It has two input voltages V1and V2, two
input resistors R1 ,R2 and a feedback resistor Rf.Assuming that op-amp is in ideal conditions and input bias
current is assumed to be zero, there is no voltage drop across the resistor Rcomp and hence the non inverting
input terminal is at ground potential. By taking nodal equations.

Rcom= R1//R2//Rf
= 10k//10k//10k
=3.3k V1/R1
+V2/R2 +V0/Rf =0
V0 = - [(Rf/R1) V1 +(Rf/R2) V2] And here R1
= R2 = Rf = 10K
V0 = -(V1 +V2)
Thus output is inverted and sum of input.
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CIRCUIT DIAGRAM:

PROCEDURE:

 Connect the circuit as shown in figure.

 Apply +Vcc =+15V and –Vcc = – 15V to Pin 7 and 4 of 741IC
 Apply the i/p voltage V1 and V2.
 Measure the o/p voltage using Multi meter or CRO
 Verify with theoretical value.
 Repeat the above for different values of V1 and V2

TABULAR COLOUM:

S.NO V1(VOLTAGE) V2(VOLTAGE) THEORITICAL(V0) PRATICAL(V0)

Vo=V1+V2

PRECAUTIONS:

 Check the circuit connections before switching on the power supply.

 Check the continuity of the connecting wires.

RESULT:

An adder circuit using IC741 op-amp is designed and verified

(B).OP-AMP AS A SUBTRACTOR

Aim:
To design sub tractor circuit using op-amp

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:

The basic difference amplifier can be used as a subtractor. The signals to be subtracted are
connected to opposite polarity inputs i.e. in inverting or non-inverting terminals of the op-amp.A
circuit that finds the difference between two signals is called a subtractor. The two inputs are
applied at the inverting & non inverting terminal of op-amp. If all external resistances are equal in
value, so the gain of the amplifier is equal to 1. The output voltage of the differential amplifier
with a gain of unity is
V0=-(Rf/R1)V1+V2(R2/(R1+R2))(1+Rf/R1)
Rf=R2
V0=- (R2/R1)V1+V2(R2/(R1+R2))
((R1+R2)/R1) R1=R2
V0= -
V1+V2
V0=V2
-V1

CIRCUIT DIAGRAM:

PROCEDURE:

7. Connect the circuit as shown in the subtractor circuit diagram

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8. Apply the supply voltages of +15V to pin 7 and -15V to pin 4 of IC 741
9. Apply DC voltage from regulated power supply to inputs V1 and V2.
10. Apply V1 = 1V and Increase V2 from 0V to 5V in steps of 1V. Repeat the same for V1 = 3V and V1
=5V.
11. Note down the Vo using Voltmeter.
12. Compare theoretical and practical values.

TABULAR COLOUM:
S.NO V1(VOLTAGE) V2(VOLTAGE) THEORITICAL(V0) PRATICAL(V0)
Vo=V2-V1

PRECAUTIONS:

 Check the circuit connections before switching on the power supply.

 Check the continuity of the connecting wires.

RESULT:

An subtractor circuit using IC741 op-amp is designed.

 EXPERIMENT NO.9.
INTEGRATOR CIRCUIT USING IC 741.
AIM:

Design and verify the functionality of Integrator using IC 741 Op-Amp.

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:

The circuit provides an output voltage which is proportional to the time integral of the input and R1CF is
the time constant of the integrator. It may be noted that there is a negative sign in the output voltage, and
therefore, this integrator is also known as an inverting integrator. The gain Av is infinite for an ideal op-
amp, so the effective time constant of the op-amp integrator becomes very large which results in perfect
integration.
V0=-1/R1Cf∫VI(t)dt
It is implemented using an op-amp in inverting configuration with –ve feedback. Capacitor is used in
feedback path and register used in input path.
The gain of the integrator at low freq can be limited to avoid the saturation problem by adding a shunt
resister Rf across feedback capacitor.
For an i/p sine wave the o/p will be cosine wave.
For an i/p square wave the o/p will be triangular wave.
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CIRCUIT DIAGRAM:

This is a very important frequency and tells us where the useful integration range start, if i/p frequency is
lower than f the ckt acts as a simple inverting amplifier and no integration results. At the frequency f 50%
accuracy results. if frequency is 10 times 99% accuracy can result.
The gain of the above the circuit is

PROCEDURE:

1. Connect the circuit according to the circuit diagram.

2. Apply sine wave to the input terminal of integrator circuit.
3. Set the input voltage peak to peak of 1 to 4 volts and frequency from 159Hz to 1.59KHz.
4. Note down the input and output wave form. Draw the waveform on graph paper
5. Apply a square wave to the i/p terminal of integrator ckt .
6. Set the i/p voltage peak to peak of 1 to 4 volts and frequency from 159Hz to 1.59KHz.
7. Note down the input and output wave form. Draw the waveform on graph paper
TABULAR COLOUM:

Input Square wave Output Triangular wave

Amplitude Vp-p Time period (msec) Amplitude Vp-p Time period (msec)

Input Sine wave Output Cosine wave

Amplitude Vp-p Time period (msec) Amplitude Vp-p Time period (msec)
 TYPICAL INPUT AND OUTPUT WAVEFORMS:

RESULT:

Hence op-amp as integrator is verified.

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EXPERIMENT NO.10.
DIFFERENTIATOR CIRCUIT USING OP AMP.
AIM:

Design and verify the functionality of Differentiator using IC 741 Op-Amp

EQUIPMENTS AND COMPONENTS:

APPARATUS:

THEORY:

As the name suggests, the circuit performs the mathematical operation of differentiation, i.e. the output
voltage is the derivative of the input voltage.

It is implemented using an op-amp in inverting configuration with –ve feedback.it contains a capacitor in
input path. Rcom need not be used as it is used only compensate for bias current.
Gain=f/fa where
fa=1/2πRfC1 For f=fa gain
will be 1.
It will increase at the rate of +20db/decade at high freq and becomes
unstable. For a sine wave input the output will be cosine.
Assume C1 =0.1µf and Rf=10kΩ
F=1/2π X 10^4 X
10^- 7=159Hz
For a square wave the output wave form consists of +ve and _ve spike of Vsat which is approx 13 volts for
a+15v power supply. During the time periods input is constant, differential output will be zero. However
when input transits both +ve and _ve levels the slope is infinite for ideal square wave.
 If we put a series register along with C1 then amplitude of spike reduces. More the register less the
amplitude. It is because gain reduces. It will convert narrow square wave o/p to real spike the register value
of 1KΩ or 4.7KΩ can be used.
Series register will not make any difference for sine wave o/p which is approx same as i/p.

CIRCUIT DIAGRAM:

PROCEDURE:

1. Connect the circuit according to the circuit diagram.

2. Apply sine wave to the input terminal of differentiator circuit.
3. Set the input voltage 4V peak to peak and frequency at 1.5KHz.
4. Note down the input and output wave form. Draw the waveform on graph paper

TABULAR COLOUM:

Input Square wave Output Triangular wave

Amplitude Vp-p Time period (msec) Amplitude Vp-p Time period (msec)

Input Sine wave Output Cosine wave

Amplitude Vp-p Time period (msec) Amplitude Vp-p Time period (msec)
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INPUT AND OUTPUT WAVEFORMS:

RESULT:

Hence op-amp as differentiator id verified.

 EXPERIMENT NO.11
CURRENT SHUNT FEEDBACK AMPLIFIER
AIM: To observe the performance of a current shunt feedback amplifier and
obtain its bandwidth.

EQUIPMENT RQUIRED:
Power supply 0-30V- 1 No.
CRO 20MHz - 1 No.
Digital multimeter - 1 No.
Signal generator 1Hz - 1MHz - 1 No.
COMPONENTS:
Resistors : 47K - 2 Nos.
2.2K - 2 Nos.
1K - 2 No
10K - 1No.
Capacitors 22µF - 3Nos.
0.1µF - 1No.
Transistors BC 107-2No.
THEORY:

Current shunt feedback circuit shows two transistor in cascade with feedback from the
second emitter to the first base through the resistor R F. we verify that this connection
produces negative feedback. The voltage Vi2 is much larger than Vi1 because of the
voltage gain of Q1. Also Vi2 is 1800 out of phase with Vi1. Because of emitter follower
action Ve2 is only slightly smaller than Vi2, and these voltages are in phase. Hence Ve2 is
larger in magnitude than Vi1 and is 1800 out of phase with Vi1. If the input signal
increases so that IS increases, If also increases, and Ii = IS - If is smaller than it would be
their were no feedback. This action is characteristics of negative feedback.
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CIRCUIT DIAGRAM:
PROCEDURE:

1. Connect the circuit as shown in the figure

2. The operating points VCEQ , IEQand VBE are measured.
3. Connect the signal generator with a sine wave of 1KHz frequency to the input and
increase the input to such a level that the output waveform of the signal as observed
on CRO is not distorted.
4. Measure the input and output voltages and calculate the gain of the amplifier. Av =
(VO/P / VI/P).
5. To measure the input impedance, find the voltage drop across the known resistance
RS. The input current therefore is measured as the voltage across Rs / Rs value. Input
impedance Zi = Vi / Ii
6. To measure the input impedance, measure the output signal voltage V O/P without any
load. Connect a resistive load and then adjust the load until the new output signal V O/P
equal to the one half of the original signal. Remove the R OUT from the circuit and
measure its value. The measured value is the output impedance of the circuit.
7. To measure the current gain AI, note down the output signal voltage when Ro is
connected and divide it by Ro to get the output current. Now current gain = output
current / input current. The power gain is the product of voltage gain and current gain.
8. Vary the frequency of the input signal from 50Hz to 1MHz in suitable steps and
calculate gain at each step. Plot the graph between voltage gain Vs frequency. Note
down the half power points and find the bandwidth of the amplifier.
9. Repeat the above steps by connecting (disconnecting) the emitter bypass capacitor C E.
The readings with CE give the response of the amplifier without out feedback. The
readings without the CE give the performance of the amplifier in current series
feedback mode.
0

MODEL GRAPHS: AV max.

-3 dB point.
Gain in dB

fL Bandwidth = fH - fH
fL Frequency
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Tabulation:
Without
feedback:
Frequency Output Voltage
S.No Input Voltage Gain(V0/Vi) 20  log10 (V0/Vi)
( Hz) (V)
With feedback:
Frequency Output Voltage
S.No Input Voltage Gain(V0/Vi) 20  log10 (V0/Vi)
( Hz) (V)
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RESULTS:

Without feedback
Input voltage (Vi) =
Input frequency =
Output voltage (V0) =
Voltage gain =
Gain in dB = (20log10(V0/Vi) =

With feedback
Input voltage (Vi)
=
Output voltage (V0) =
Voltage Gain =
Gain in dB = (20log10(V0/Vi) =
 EXPERIMENT NO.12
DESIGN AN RC PHASE SHIFT OSCILLATOR CIRCUIT AND DERIVE THE GAIN
CONDITIONS FOR OSCILLATIONS PRACTICALLY FOR GIVEN FREQUENCY.

AIM: To construct and study the operation of RC phase shift oscillator using IC 741 Op-Amp.

APPARATUS:

1. IC 741
2. Resistors (10KΩ- 4 , 2KΩ)
3. Capacitors (0.1µF-2,0.001µF-3,100µF-1)
4. Diodes IN 448-2
5. DRB
6. Potentiometer
7. bread board trainer
8. CRO
9. Patch cards and connecting wires.

CIRCUITDIAGRAM:

RC Phase shift oscillator

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THEORY:

RC Phase Shift Oscillator:

The RC phase shift oscillator consists of an op-amp as the amplifying stage and three RC cascaded
networks.

The feedback circuit provides feedback voltage from the output back to the input of the op- amp.
The op-amp is used in the inverting mode therefore any signal that appears at the inverting terminal is
shifted required for oscillation is provided by the cascaded RC networks. Thus the total phase shift around
the loop is 360°or 0°. At some specific frequency when the phase shift of the cascaded RC networks is
exactly 180° and the gain of the amplifier is sufficiently large, the circuit will oscillate at that frequency.
This frequency is called the frequency of oscillation f0 and is given by f0 =1/2Π√6RC =0.065/RC.

At This frequency, the gain Av must be at least 29. That is, |Rf/R1| = 29. i.e;
Rf = 29R1.

PROCEDURE:

RC Phase Shift Oscillator:

1.
Connections are made as per the circuit diagram.
2.
Observe output waveform on CRO.
3.
Determine the frequency of oscillations by measuring the time period of output in CRO.
4.
Compare the theoretical and practical values of f0. Where f0= 1/(2Π 6RC ).
5.
Measure the phase shift between.
1.
V0 and Va node A.
2.
V0 and Vb node B.
3.
V0 and Vb node
C. Using Φ= (td
/tr) Χ 360
Where td=time period difference between two signals. tr = time period of reference signal
MODEL WAVE FORMS:

PRECAUTIONS:

1. Make null adjustment before applying the input signal.

2. Maintain proper Vcc levels.

RESULT:
RC phase shift oscillator constructed, and its operation was studied using IC 741.
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EXPERIMENT NO.13
DESIGN TRANSFORMER COUPLED CLASS -A POWER AMPLIFIER
AND DRAW THE I/O WAVEFORMS,FIND ITS EFFICIENCY
AIM: To observe the input and output waveforms and to calculate the efficiency.

EQUIPMENT REQUIRED:
APPARATUS REQUIRED:
Power supply 0-
30V- 1 No. CRO
20MHz - 1 No.
Digital multimeter - 1 No.
Signal generator 1Hz - 1MHz - 1 No.
COMPONNTS REQUIRED:
Resistors 33KΩ - 1N0
5.6KΩ -2NO
470Ω -1NO
Capacitors 47uf -1NO
2.2uf -
1NO
TRANSFORMER
-1NO
CIRCUIT DIAGRAM:

THEORY:

The amplifier is said to be class A power amplifier if the q point and the
input signal are selected such that the output signal is obtained for a full input
cycle . For this class the position of q point is approximately y at the mid
 point of the load line. For all the values of input signal the
transistor remains in the active region and never entire into the cutoff or
saturation region. The collector current flows for 3600 (life cycle) of the input
signal in other words the angle of the collector current flow is 3600 the claa a
amplifiers or furthers classified as directly coupled and transformer coupled and
transformer coupled amplifiers in directly coupled type .The load is directly
connected in the collector circuit while in the transformer coupled type,
the load is coupled to the collector using the transformer.
Advantages:
1. Distortion analysis is very important
2. It amplifies audio frequency signals faithfully hence they are called as audio amplifiers

Disadvantages:
1. H parameter analysis is not applicable
2. Due to large power handling the transistor is used power transistor which is
large in size and having large power rating
PROCEDURE:

1. CONNCECT the circuit as per the ciecuit diadram

2. Set Vs (say 250 to 300 mV), at 10 KHz using signal generator.

3. Connect milli ammeter to the ammeter terminals

4. By keeping the input voltage constant, vary the frequency from 0

to 1MHz in regular steps .

5. Note down the corresponding output voltage from CRO

6. Calculate the DC input power using the formula Pdc= VccIc

2
7. Calculate the AC output power using the formula Pac = V
O /8R
L

8. Calculate the efficiency n = Pac /Pdc

9. Plot the graph between Gain (db) and frequency.

10. Calculate bandwidth from the graph.

OBSERVATIONS:
VO = , VI =

VCC = RL =
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Efficiency (Pac/ Pdc) = _ P ac = Vcc Ic

PDC = Vm/2RL = V2pp/8RL

%n = Pac/ PDC X 100

GRAPH: I/P

O/P

RESULT: Gain and frequency as observed of Class A power amplifier.

%n = Pac/ PDC X 100 =

VIVA QUESTIONS:

1.On which criteria based the power amplifiers are

classified? 2.what is the operating point of class-A
power ampliier?
3. what is meant by efficiency?

4. howmuch efficiency will b obtained in classs-A power amplifier?

5. what are the applications of power amplifier?

 ADDITIONAL EXPERIMENTS

EXPERIMENT NO.1
OBTAIN THE I/O CHARACTERISTICS OF CC CONFIGURATIONS OF
BJT.CALCULATE H-PARAMETERS FROM THE CHARACTERISTICS
Aim: To study the input and output characteristics of a transistor in Common Collector
Configuration.

Apparatus Required:
S.No. Name Quantity
1 Transistor BC 107 1(One) No.
2 Resistors (39KΩ, 1KΩ) 2(Two) No.
3 Bread board 1(One) No.
4 Dual DC Regulated Power supply (0 – 30 V) 1(One) No.
5 Digital Ammeters ( 0 – 300µA, 0-10mA) 2(Two) No.
6 Digital Voltmeter (0-10V, 0-1V) 2(Two) No.
7 Connecting wires (Single Strand) few

Circuit Diagram:

h – Parameter model of CB transistor:

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 Observations:

Input Characteristics
Sl. Applied VCE = 2V VCE = 5V VCE = 10V
No Voltage
VBE (V) IB (µA) VBE (V) IB (µA) VBE (V) IB (µA)
VBB (V)
1
2
3
4
5

Output Characteristics
Sl. Applied IB = 10µA IB = 20µA IB = 30µA
No Voltage
VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)
VCC (V)
1
2
3
4
5

Graph:

1. Plot the input characteristics for different values of VCE by taking VBE on X-axis
and IB on Y-axis taking VCC as constant parameter.
2. Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis
taking IB as a constant parameter.
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Procedure:
Input Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep output voltage VCE as constant 2V by varying VCC.
3. Varying VBB gradually, note down base current IB and emitter-base voltage (VBE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in steps of 0.1 V. Once the
current starts increasing vary VBB in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCE = 5V & 10V.

Output Characteristics:
1. Fix base current, IB at constant value say 10µA.
2. Vary the output voltage VCC in steps.
3. Measure the voltage VCE and current IC for different values.
4. Repeat above steps for IB = 20µA, 30µA
5. Draw output static characteristics for tabulated values.

Result:
The h-parameters for a transistor in CB configuration are:
a. The Input resistance (hib) Ohms.
b. The Reverse Voltage Transfer Ratio (hrb) .
c. The Output Admittance (hob) Mhos.
d. The Forward Current gain (hfb) .
 EXPERIMENT NO.2
COLPITTS OSCILATOR

AIM:
To determine the frequency of oscillations of the Colpitts Oscillator.

APPARATUS :
Power supply 0-30V 1No.
CRO 20MHz 1No.
Inductor 0.33mH 1 No
Resistors 10kΩ, 22kΩ, 100kΩ 1 No
Capacitors 100µF, 330pF 1 No
Capacitors 10µF 2 No,
Transistors BC107 1 No.
Potentiometer 10K 1 No
DCB 1 No
Bread board
CRO Probes

CIRCUIT DIAGRAM:
Vcc = +10V

R1 (10K) Rc (22K)

Cc(10uf)

Q3 C B
Cs (10uf)

BC 107
E

CRO
R2 (10K) Re 100ohms
(Pot) Ce (100uf)

C1 (330pf) C2 (DCB)

L (0.33mH)

COLPITTS OSCILLATOR
:
 94
SPEC -ECE
ANALOG ELECTRONIC CIRCUITS
PROCEDURE :
1. The circuit is connected as shown in figure.
2. The capacitor C1 is kept constant and C2 is up to some value.
3. The resistor R2 is adjusted until sinusoidal waveform is observed on the CRO.
4. Then the time period and hence the frequency are Calculated which is nearly equal to the
theoretical frequency.
5. The theoretical and practical values of frequency are verified using the formula.
fo = 1 / 2П √ LCeq where Ceq = C1C2
C1+C2
fo practical = 1 /T (Hz) T = Time period.
6. The experiment is repeated for different values of C2 and each time the time period is noted.

TABULARFORM :

CAPACITANCE Theoretical T
INDUCTANCE f=1/T Amplitude
S.NO. fo=1/2П √ LCeq (Sec) (V)
(L) (Hz)
C1 C2 Ceq (kHz)

1. 0.33mH 330pf 330pf

2. 0.33mH 330pf 470pf

3. 0.33mH 330pf 570pf

MODEL GRAPH :

Amplitude(V)

Time(sec)
PRECAUTIONS :

1. Avoid loose and wrong connections.

2. The sinusoidal waveform obtained must be distortion.
3. Readings should be taken without parallax error.

QUESTIONS:
1. What type of feedback is used in oscillators.
A. Positive feedback
2. Define tank circuit.
A. It is the circuit which generates oscillations in the oscillator
using tank circuit components.
3. What is barkhausen condition.
A. i. loop gain |Aβ|=1 ii. Total phase shift = 360° or 0°
4. Why LC oscillators cannot be used as a audio frequency oscillators.
A. At audio frequency range 1.e at low frequency the inductor size becomes bulky.

RESULT: The frequency of the oscillations of colpitts oscillator is determined .