Transistor Biasing and Stabilization

Biasing
We known that transistor can operate in any of three regions of operation namely cutoff, active region
and saturation. To operate the transistor in these regions the two junction of a transistor should be
forward or reversed biased as shown in table
Region of operation Base Emitter Junction Collector base junction Application
Cut off Reversed bias Reversed bias As a switch
Active Forward bias Reversed bias Amplifier
Saturation Forward bias Forward bias As a switch
In order to do so, we need to connect external DC power supplies with correct polarities & magnitude.
This process is called as biasing of transistor.
Voltage divider bias (VDB)
The most famous circuit based on the emitter-bias prototype is called voltage divider bias. You can
recognize it by the voltage divider in the base circuit.
Accurate VDB Analysis
The Key idea is for the base current to be much smaller than the current through the voltage divider.
When the condition is satisfied, the voltage divider holds the base voltage almost constant and equal to
the unloaded voltage out of the voltage divider. This Produces a solid Q point under all operating
conditions
VDB load line & Q point
The load line is drawn through saturation and cut off. The Q point lies on the load line with the exact
location determined by the biasing. Large variations in current gain have almost no effect on the Q point
because this type of bias sets up a constant value of emitter current.
Two –Supply emitter bias
This design uses two power supplies: one positive and the other negative . The idea to set up a constant
value of „emitter current‟.
Other types of bias
This section introduced negative feedback, a phenomenon that exits when an increase in an output
quantity , produces decreases in an input quantity. It is brillent idea that led to voltage-divider bias. The
other type of bias cannot use enough –ve feedback, so they fail to attain the performance level to voltage-
divider bias.
PNP Transistors
These pnp devices have all current & voltages reversed from their npn counterparts. They may be used
with negative power supplies; more commonly, they are used with +ve power supplies in an upside-down
configuration.
Reverse Feedback ratio
If some percentage of an amplifier‟s output signal is connected to the input, so that the amplifier
amplifies part of its own output signal, we have what is known as feedback. Feedback comes in
two varieties: positive (also called regenerative), and negative (also called degenerative). Positive
feedback reinforces the direction of an amplifier‟s output voltage change, while negative feedback does
just the opposite.
Input & Output impedances
It is the input impedance “seen” by the source driving the input of the
amplifier. Zin or Input Resistance is an important parameter in the design
of a transistor amplifier and as such allows amplifiers to be characterized
according to their effective input and output impedances as well as their
power and current ratings.
For details refer to chapter 3
Bias Stabilization
The stability of a system is a measure of the sensitivity of a network to variations in its parameter. Β
increases with increase in temperature . Magnitude of VBE decreases about 7.5 mV per degree Celsius
(°C) increase in temperature. ICO(reverse saturation current): doubles in value for every 10°C increase in
Temperature
Stability Factors, S(ICO), S(VBE), and S(β)
A stability factor,S, is defined for each of the parameters affecting bias stability as listed below:
S(ICO) = ΔIC / ΔICO
S(VBE) = ΔIC / ΔVBE
S(β) = ΔIC / Δ β
In each case, the delta symbol signifies change in that quantity.
BJT Transistor modeling
A model is the combination of circuit elements , properly chosen, the best approximates the actual
behavior of a semiconductor device under specific operating conditions.
The ac equivalent of a network is
1. Setting all dc sources to zero and replacing them by a short- circuit equivalent
2. Replacing all capacitors by a short-circuit equivalent.
3. Removing all elements bypassed by the short-circuit equivalents introduced by steps 1 & 2.
4. Redrawing the network in a more convenient and logical form.

Transistor Model

The T- Model (Ebers- Moll model) The п Model

 Type Circuit Calculations Characteristics Where used

IB= (VBB-0.7V)/RB
Few parts; β
dependent;
Base bias IC=βIB Switch; digital
fixed base
current
VCE= VCC - ICRC

VE=VBB -0.7V
Fixed emitter
IE= VE/ RE IC driver ;
Emitter bias current; β
VC= VC-ICRC amplifier
independent
VCE=VC-VE

VB=
R2VCC/(R1+ R2)
Needs more
VE= VB-0.7V
resistors; β
Voltage divider
independent; Amplifier
bias IE= VE/ RE
needs only one
power supply
VC= VCC-ICRC
VCE= VC - VE

VB = 0V
VE= VB-0.7V
VRE=VEE-0.7V Needs positive
Two – supply IE=VRE/RE & negative
Amplifier
emitter bias power supplies;
VC= VCC- ICRC β independent;

VCE= VC- VE

VDB Derivations

Base voltage Emitter voltage

VBB= R2VCC/(R1+ R2) VE= VBB- VBE

Emitter current Collector current

IE = VE/ RE IC ≈ IE

Collector voltage Collector – emitter voltage

VC = VCC - ICRC VCE= VC - VE

TSEB (Two supply emitter bias) Derivations

Base voltage Emitter current

VB≈ 0 VC= VCC- ICRC

Collector Voltage (TSEB) Collector-emitter Voltage (TSEB)

VC=VCC -ICRC
VCE= VC+ 0.7V
 Long & Short Questions

What is meant by transistor –biasing ? Define Stability factor.

Or

What do you understand by transistor by transistor biasing ? Why it is necessary ?

Transistor Biasing is the process of setting a transistors DC operating voltage or current

conditions to the correct level so that any AC input signal can be amplified correctly by the
transistor.
Necessary of transistor biasing
 To active an transistor, biasing is essential. For proper working it is essential to
apply to apply voltages of correct polarity across its two junctions.
 If it is not biased correctly it would work inefficiently and produce distortion in
the output signal
 Q-point is not middle Output signal is distorted & the signal is clipped
 Further for various applications , BJT is biased as shown in table

Region ofopeIration Base Emitter Junction Collector base junction Application

Cut off Reversed bias Reversed bias As a switch
n
Active Forward bias Reversed bias Amplifier
Saturation o Forward bias Forward bias As a switch

In order to have these applications , we need to connect external DC power

supplies with correct polarities & magnitude. This process is called as biasing of
transistor.

Stability Factor
The stability of Q point of transistor amplifier depends on the following three parameters :
1. Leakage current ICO 2. βdc 3. Base to emitter voltage
The effect of these parameters can be expressed mathematically by defining the stability factors
S = Δ𝐼𝐶
Δ𝐼𝐶𝑂
1. Stability factor
Constant VBE & βdc

This represents the change in collector current due to change in reverse saturation
current ICO .The other two parameters that means VBE & βdc are assumed to be
constant.

S‟ = Δ𝐼𝐶
Δ𝑉𝐵𝐸
2. Stability factor
Constant ICO & βdc
 S‟ represents the change in IC due to change in VBE at constant ICO & βdc
Δ𝐼𝐶
βdc
3. Stability factor S” =

Constant ICO & 𝑉𝐵𝐸

Total change in collector current

Δ𝐼𝐶= S. Δ𝐼𝐶𝑂 + S‟. Δ𝑉𝐵𝐸 + S”. βdc

 Ideally the values of all the stability factors should be zero and practically they should be
as small as possible.
 Practically the value of S is significantly higher than the other two stability factor. Hence
while comparing the biasing circuits, the values of S is more significant.

What are the various methods used for transistor biasing? Explain one method & State its
advantage & disadvantages.

Related Short Answer Questions

(i) What do you mean by biasing of a transistor ? Explain with examples

Biasing is a technique to aid V BB in the input circuit which is

separate from the VCC used in the output circuit. The following
are the most commonly used method for transistor biasing are as
below :

1. Fixed bias circuit (Single base resistor biasing) or

base bias
2. Collector to base bias circuit
3. Voltage divider bias circuit (VDB) or self bias
4. Emitter bias or modified fixed bias circuit

Fixed bias circuit (Single base resistor biasing) or base bias

The simplest of all biasing is fixed bias ckt. as shown in fig.

 Before biasing we were using two separate power supplies i.e. VCC & VBB to bias a
transistor.
 But in this circuit only one power supply has been used to supply power to both collector
as well as base.
 RB is the single base biasing resistor , hence this circuit is also called as single base
resistor biasing.
Analysis of Fixed bias circuit :

As shown in fig. splitting input & output terminals in two loops , namely base circuit & collector circuit

Fig. (a) Fig. (b)

as shown in fig.(a).

Expression for IB

 Consider the base circuit as shown in fig.(b) . Applying KVL to the base circuit we have
- VCC + IBRB + VBE = 0
 Rearranging the equation we get
IB = (VCC – VBE)/ RB
 For silicon VBE= 0.7 and for germanium VBE= 0.3V

Expression for IC & VCE

Since the fixed bias is operated in the active region therefore

IC= β IB + ICEO

∵ β IB >>>ICEO

∴ IC= β IB

Applying KVL to the collector circuit shown , we have

VCC- ICRC – VCE = 0

∴ VCE = VCC- ICRC

Advantages

1. The fixed bias circuit is simple and less number of components.

2. It give very good flexibility as the Q point can be set at any point in the active region by just
adjusting the value of RB .
Disadvantages

1. Vary poor thermal stability as S= 1 + βdc.

2. With changes in βdc due to change in temp. , the operating point keeps on shifting its position.

What do you understand by ‘Bias stability’ of a transistor ? Why is it necessary ? Explain the
working of self-bias circuit for common emitter BJT.

Or

Draw the circuit diagram of voltage diagram of voltage divider bias of a transistor . Explain
its working.

For definition ref. Q.1

Self Bias
The voltage –divider biasing is known as self bias circuit. The circuit for voltage- divider
bias is shown in fig. (a) . The resistance R1 & R2 form a potential divider to apply a fixed voltage
VB to the base.
A resistance RE has been connected in the emitter circuit. This resistance is not present in the
fixed bias or collector to base bias circuits.

Fig. (a) Fig. (b)

Analysis of Voltage divider bias circuit

Base circuit

The base circuit as shown in fig(b) . Here we have considered collector & emitter terminals as
open circuited . The base Voltage VB is nothing but the voltage across resistor R2
𝑅2
𝑉
+𝑅2 𝐶𝐶
i.e. V =
1
B
 This is because , current through R1 & R2 is approx. same and is equal to I.

Collector circuit

The collector circuit as shown in fig., the voltage across emitter resistance
RE can be as follows :

VE= IERE = VB- VBE

∴ IE= (VB- VBE)/ RE

Applying the KVL to the collector circuit we get

∴ VCC= ICRC + VCE+ IERE

-VCC + ICRC + VCE+ IERE= 0

VCE= VCE - IERE -ICRC

Bias stabilization
 If IC increases due to change in temp. or β

 Then IE increases

 Hence drop across RE increases (VE= IERE)

 But VB is constant. Hence VBE decreases.

 Hence IB decreases.

 Hence IC also deceases. Thus the compensation for increase in IC is achived.

Draw the circuit diagram of Collector to base bias of a transistor . Explain its working.

Collector to base bias shown in fig. is also known as collector-feedback bias.

Historically , this was another attempt at stabilizing the Q point. Again, the basic
idea is to feed back a voltage to the base in an attempt to neutralized any change in
collector current.

Like emitter-feedback bias circuit , collector feedback bias circuit uses –ve feedback
in an attempt to reduce the original change in collector current.
Analysis

Applying KVL in the base circuit we have

-VCC + RC(IC+ IB) +IBRB+ VBE = 0

 ∵ IB= IC/β

∴ IB 𝑉𝐶𝐶 −
=𝑅𝑉𝐶+
𝐵𝐸
𝑅
𝐵 /β

Similarly applying KVL on

collector side We have VC= VCE =

VCC - ICRC

Draw the circuit diagram of two supply emitter bias of a transistor . Explain its
working.

Sometimes electronic equipment has a power supply that produces both +ve and –ve
supply voltages. The –ve supply forward biases the emitter diode. The +ve supply
reverse bias the collector diode.

This circuit is derived from emitter bias, for this reason , we refer to it as two-supply
emitter bias (TSEB).

Analysis

VB ≈ 0 V

Applying KVL from emitter to base loop in anticlockwise we have

VEE - IERE - VBE =0

∴ - IE = (- VEE + VBE ) / RE = (-VEE + 0.7 ) / RE

∴ IE = (VEE - 0.7 ) /

RE V(RE)= VEE -

0.7 V

Applying KVL on collector side we have

- VCC+ ICRC + VC= 0

∴ VC = VCC-

ICRC VCE= VC

- VE

Q.7. Compare Fixed bias, Collector to base bias & Voltage divider bias circuits.
Sr. Collector to base
Parameter Fixed bias Voltage divider bias
No . bias
Emitter
1. Not used Not used Used
Resistance
2. -ve Feedback Not used Included Included
S=(1+ β ) * [ 1+ 𝑅𝐵 ] /
𝑅𝐶
3. Stability S= (1+ β) S = (1+ β)/ [1+
 𝑅𝐶
)] [1+ β +𝑅𝐵 ]
𝑅𝐶+𝑅𝐵
factor
𝑅𝐶
β(

Q-Point
4. Poor Moderate Good
stability

5. Configuration

Numerical

Determine IC, VE, VB& VC for the voltage divider

configuration .If β=20, R1= 62KΩ, R2= 9.1 KΩ , RC= 3.9 KΩ
,RE= 0.68 KΩ &VCC= 16V
Exp: As the biasing is voltage divider

∴ VB = 16 x 9.1𝑘Ω
We have VB= VCC. R2/ (R1+R2)
62𝑘Ω+9.1𝑘Ω
= 2V
∵ VE= VB- VBE
∴ VE= 2V -0.7V = 1.3V
∵IE= VE/ RE
∴IE= 1.3V/ 0.68KΩ = 1.23mA
∵ IC= α .IE= β /(β+1) IE
∴ IC= 1.23mA x 20/21 = 1.17mA
For the fixed bias circuit determine IB, IC, VCE, VB, VC&VBC for the following parameters
RB = 240 KΩ , RC= 2.2 KΩ , VCC= 12 V & β=50
Exp: As it is fixed bias

∴ IB= (12-0.7)/ 240 KΩ

We have IB = (VCC – VBE)/ RB

= 47.08μA
∵IC= β IB
∴ IC= 50 x 47.08μA = 2.35mA
∵VCE = VCC- ICRC
∴VCE = 12 – 2.35mA x 2.2 KΩ

∵ Emitter terminal is grounded

= 6.83 V

∴ VB= VBE= 0.7V

∵VBC= VB- VC
VC = VCE= 6.83 V
 ∴VBC= 0.7V – 6.83V = 6.13 V

Determine the values of IC & VCE for the biasing circuit shown in fig.

Exp: As per the given parameters in Collector-emitter feedback

Applying KVL on input side, we have

-10 + 3.9kΩ(IC + IB) + 250kΩ. IB +VBE+ 1 kΩ. IE = 0

∵ IE = (1+β)IB , IC = βIB ,VBE=0.7 and β= 100

∴ -10 + 3.9kΩ(βIB + IB) + 250kΩ. IB + 0.7+ 1 kΩ. (1+β)IB = 0

IB= 9.3/ [3.9kΩ(1+β) + 250kΩ +1 kΩ (1+β)]

IB= 9.3/ [3.9kΩ(1+100) + 250kΩ +1 kΩ (1+100)]

IB= 12.48 μA Ans

Determine the voltage gain of a single stage CE transistor if the effective resistance of
collector circuit is 2kΩ , input resistance is 1kΩ & current gain is 50. [Important]

Exp: Given RC= 2kΩ , Rin= 1kΩ & β= Ai= 50

∵ AV
𝑅𝐿
= β𝑅𝑖𝑛
∴ AV
= 50 * 2kΩ = 100 Ans
1kΩ

Determine VC and VB for the network of Fig.

Exp: Applying KVL in the anticlockwise for the

base-emitter loop , we have

+VEE – VBE – IBRB= 0

∴ IB= (VEE – VBE )/ RB

∴ IB= (9-0.7)/ 100 kΩ = 83μA

∵ IC = β IB

∴ IC= 45 x 83μA = 3.735 mA

∵VC= - IC RC
 ∴VC = - 3.735 mA x 1.2 kΩ = -4.48 V

∵VB= - IB RB

∴VC = -83mA x 100 kΩ = -8.3 V

Determine the voltage VCB and the current IB for the common-base configuration for the
given fig.

Exp: Applying KVL to the input circuit yields

-VEE+ IERE+ VBE= 0

∴IE = (VEE - VBE) / RE= (4-0.7)/ 1.2k Ω = 2.75mA

Applying KVL to the output circuit yields

-VCC+ ICRC+ VCB= 0

∴ VCB = VCC- ICRC

∵ IC≈ IE

∴ VCB = 10 - 2.75mA x 24 k Ω = 3.4V

∵ IB= IC/ β

∴ IB= 2.75mA/ 60 = 45.8μA Ans

What is the collector voltage in the given circuit

Exp: Applying KVL at the Emitter base terminal we have

+ 2V – 1k Ω x IE – VBE= 0

∴ IE = ( 2- 0.7 ) / 1k Ω = 1.3mA

∵ VC= VCC - ICRC

Also IC≈ IE

∴ VC= 10- 1.3mA x 3.6k Ω

5.32 V Ans