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62 FB 24 Da 35 Fe 2

Uploaded by

yflying7
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AES001N100T

N-MOSFET TO-263 100V, 120A, 3.3mR

Features Product Summary


⚫ Uses advanced SGT technology
TO-263
⚫ Extremely low on-resistance RDS(on)
⚫ Excellent gate charge x RDS(on) product(FOM) VDS 100V

Application RDS(on)@VGS=10V 3.3mΩ

⚫ Motor control and drives ID 120A


⚫ Battery management
⚫ DC/DC converter
⚫ General purpose applications

Package Marking and Ordering Information


Type Package Marking Reel Size Tape Width Packing

AES001N100T TO-263 AES001N100T 330*28.5mm 24mm Reel&Tape

Maximum Ratings
Parameter Symbol Value Unit

Drain-source voltage VDS 100 V


Continuous drain current
TC = 25°C (Silicon limit) 220
ID
TC = 25°C (Package limit) 120
TC = 100°C (Silicon limit) 108 A
Pulsed drain current
ID pulse 480
TC = 25°C, tp limited by Tjmax

Avalanche energy, single pulse (L=0.5mH,Rg=25Ω) EAS 885 mJ

Gate-emitter voltage VGS ±20 V


Power dissipation
TC = 25°C PD 225 W

Operating junction and storage temperature Tj , Tstg -55~150 ℃

-Rev0.0/2022-05-20 Page 1 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ
Thermal Resistance
Symbol Value Unit

Thermal resistance, junction – case. Max RthJC 0.55


℃/W
Thermal resistance, junction – ambient. Max RthJA 60

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified


Value
Parameter Symbol Test Condition Unit
min. typ. max.

Static Characteristic
Drain-source breakdown
V(BR)DSS VGS=0V, ID=250uA 100 - -
voltage
VDS=VGS, ID=250uA V
Gate threshold voltage VGS(th )
Tj=25°C 2 3 4
VDS=100V,VGS=0
Zero gate voltage drain current IDSS V Tj=25°C - - 1 μA
VDS=80V,Tj=125°C - 10
-

Gate-source leakage current IGSS VGS=20V,VDS=0V - - 100 nA


VGS=10V, ID=50A,
Drain-source on-state RDS(on)
Tj=25°C TO-263 - 3.3 4.2 mΩ
resistance

Transconductance gfs VDS=5V,ID=50A - 55 - S

Dynamic Characteristic
Input Capacitance Ciss - 6956 -

Output Capacitance Coss VGS=0V, VDS=50V, - 978 -


f=1MHz pF
Reverse Transfer Capacitance Crss - 38 -

Gate Total Charge QG - 95 -

Qgs VGS=10V, VDS=50V,


Gate-Source charge - 25 -
ID=50A nC
Gate-Drain charge Qgd - 21 -

Turn-on delay time td(on) - 32 -

Rise time tr - 45 -
Tj=25°C, VGS=10V,
Turn-off delay time td(off) VDS=50V, RL=3Ω - 52 - ns

Fall time tf - 31 -
VGS=0V, VDS=0V,
Gate resistance RG - 2 - Ω
f=1MHz

-Rev0.0/2022-05-20 Page 2 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ
Body Diode Characteristic
Body Diode Forward Voltage VSD VGS=0V,ISD=50A - 0.90 1.2 V
Body Diode Reverse Recovery IF=30A,
trr - 85 - ns
Time dI/dt=500A/μs
Body Diode Reverse Recovery IF=30A,
Qrr - 254 - nC
Charge dI/dt=500A/μs

-Rev0.0/2022-05-20 Page 3 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ
Typical Performance Characteristics

-Rev0.0/2022-05-20 Page 4 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ

-Rev0.0/2022-05-20 Page 5 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ

-Rev0.0/2022-05-20 Page 6 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ

Test Circuit & Waveform

-Rev0.0/2022-05-20 Page 7 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ

Package Outline: TO-263-2L

-Rev0.0/2022-05-20 Page 8 乂易半导体科技(无锡)有限公司


AES001N100T N-MOSFET 100V, 120A, 3.3mΩ
Revision History
Revision Date Major changes
0.0 2022/05/20 Preliminary Revision

-Rev0.0/2022-05-20 Page 9 乂易半导体科技(无锡)有限公司

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