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ASSIGNMENT

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49 views2 pages

ASSIGNMENT

Uhv Uhv

Uploaded by

msmohamedabdullah63
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DEPARTMENT OF ECE

ASSIGNMENT-NO. 1
Academic Year : 2024-2025
Batch : 2024-2028
Course Code & Name : 23EC1301 & ELECTRONIC DEVICES
Year/Semester/Section : I&I
Regulation : 2023 https://www.geeksforgeeks.org/Electronics devices /?ref=lbp

Total Marks : 40
QUESTIONS

RESOURCE LINK
https://www.geeksforgeeks.org/semiconductor conductivity ref=lbp

https://www.geeksforgeeks.org/intrinsic-semiconductors-and-extrinsic-semiconductors/
https://www.electronics-tutorials.ws/diode/
https://www.geeksforgeeks.org/rectifier/

BATCH-I (Roll NO: 1 to 10) (4*10=40)

1. Explain how doping can increase the conductivity of a semiconductor. What is the
difference between an n-type semiconductor and a p-type semiconductor?
2. Describe the energy band structure of intrinsic and extrinsic semiconductors, and
explain how doping affects the position of the Fermi level.
3. Discuss how the series resistance (RF) and junction capacitance (Cj) in the equivalent
circuit of a Schottky diode impact its performance at high frequencies.
4. Describe the forward and reverse bias operation of a PIN diode. How does the intrinsic
layer affect the diode's current-voltage (I-V) characteristics?

Batch II (Roll No: 11-20)

1. Compare and contrast the electrical conductivity of semiconductors with metals as a


function of temperature. Why does conductivity in semiconductors increase with
temperature?
2. Describe the process of IC fabrication and outline the major steps involved from raw
silicon to the final packaged IC.
3. Draw and explain the I-V characteristic curve of a tunnel diode. Identify the regions of
negative resistance and explain their significance.
4. Explain the operation of a full-wave rectifier using a center-tap transformer. How does
it improve efficiency compared to a half-wave rectifier?
Batch III (Roll No: 21-30)
1. Define n-type and p-type semiconductors, and describe how each is created from an
intrinsic semiconductor. How does the charge carrier concentration differ between
them?
2. What are energy band diagrams, and how do they represent the electronic structure of
materials?
3. Explain the concept of depletion region in a p-n junction diode. How is it formed, and
what is its significance?
4. Describe the working principle of a Gunn diode. How does it generate microwave
oscillations?

Batch IV (Roll No: 31-40)


1. Discuss the importance of doping in semiconductor technology and how it transforms
an intrinsic semiconductor into an extrinsic one. Provide examples of how doping is
used in electronic devices.
2. What is photolithography in IC fabrication, and why is it critical? Explain the role of
photoresist materials in this process.
3. What is the difference between Zener breakdown and avalanche breakdown? How are
these mechanisms utilized in Zener diodes?
4. What is a tunnel diode, and how does its structure differ from a conventional p-n
junction diode?

Batch V (Roll No: 41-50)

1. How can energy band diagrams be used to understand the operation of semiconductor
devices like diodes and transistors?
2. What is the role of ion implantation in IC fabrication, and how does it compare to
diffusion for introducing dopants?
3. Describe the principle of operation of a PIN diode when used as a photodetector. How
does it convert light into electrical signals?
4. Discuss the use of a voltage regulator in a rectifier circuit. How does it help in achieving
a stable DC output?

Dead Line : Submit it on or before 04.11.2024

COURSE IN-CHARGE HoD

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