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Assignment 2

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4 views1 page

Assignment 2

Uploaded by

newton
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© © All Rights Reserved
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Birla Institute of Technology & Science, Pilani

Work-Integrated Learning Programmes Division


First Semester 2024-2025
Assignment-2
Due Date:21-10-2024
Max Marks: 10

Course No. : MEL ZG512


Course Title : OPTOELECTRONIC DEVICES, CIRCUIT & SYSTEM

Note:
1. All parts of a question should be answered consecutively. Each answer should start from a fresh page.
2. Assumptions made if any, should be stated clearly at the beginning of your answer.

1. Derive an expression for the gain of a photoconductor with dc excitation at different


levels of increasing applied bias if the device has one ohmic contact (for electron flow)
and the other blocking (to holes).

2. Describe the eye diagram as applicable to Optical Fiber Communication and what factors
we can measure using the eye diagram.
3. A photodiode made of Si has p-region doped with 10 24 boron atoms/m3
and n-region doped with 1024 Arsenic atoms/m3. The width of the p side
(xp) is 1.2 µm for Si K =12. The intrinsic carrier concentration of Si at
300k is given by ni = 2 X 1016. The index of the fraction of Si is 3.5, and
the absorption coefficient is = 10 m-1. Calculate the quantum efficiency
of the photodiode at 300K.
4. Calculate the solar cell efficiency and fill factor for the 1 cm 2 silicon
solar cell, which has a saturation current of 10 -12 A and is illuminated
with sunlight, yielding a short-circuit photocurrent of 25 mA.
*********

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