DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D088

BAS16
High-speed diode
Product specification 2001 Oct 10
Supersedes data of 1999 May 26
Philips Semiconductors Product specification

High-speed diode BAS16

FEATURES PINNING
• Small plastic SMD package PIN DESCRIPTION
• High switching speed: max. 4 ns 1 anode
• Continuous reverse voltage: max. 75 V 2 not connected
• Repetitive peak reverse voltage: max. 85 V 3 cathode
• Repetitive peak forward current: max. 500 mA.

APPLICATIONS
• High-speed switching in hybrid thick and thin-film
2
handbook, halfpage 1
circuits.
2 1
DESCRIPTION n.c.

The BAS16 is a high-speed switching diode fabricated in 3

planar technology, and encapsulated in a small SOT23
plastic SMD package. 3 MAM185

MARKING

TYPE NUMBER MARKING CODE(1)

Fig.1 Simplified outline (SOT23) and symbol.
BAS16 A6∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 85 V
VR continuous reverse voltage − 75 V
IF continuous forward current see Fig.2; note 1 − 215 mA
IFRM repetitive peak forward current − 500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t=1s − 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note
1. Device mounted on an FR4 printed-circuit board.

2001 Oct 10 2
Philips Semiconductors Product specification

High-speed diode BAS16

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VF forward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 50 mA 1 V
IF = 150 mA 1.25 V
IR reverse current see Fig.5
VR = 25 V 30 nA
VR = 75 V 1 µA
VR = 25 V; Tj = 150 °C 30 µA
VR = 75 V; Tj = 150 °C 50 µA
Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF = 10 mA to 4 ns
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; 1.75 V
see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.

2001 Oct 10 3
Philips Semiconductors Product specification

High-speed diode BAS16

GRAPHICAL DATA

MSA562 -1 MBG382
250 300
handbook, halfpage
IF
(mA) IF
200 (mA)
(1) (2) (3)
200
150

100
100

50

0 0
0 50 100 150 200 0 1 VF (V) 2
Tamb (oC)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board. (3) Tj = 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of

current as a function of ambient temperature. forward voltage.

MBG704
102
handbook, full pagewidth

IFSM
(A)

10

10−1
1 10 102 103 tp (µs) 104

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

2001 Oct 10 4
Philips Semiconductors Product specification

High-speed diode BAS16

MGA884 MBG446
105 0.8
handbook, halfpage
IR Cd
(nA) (pF)
V R = 75 V
4
10 0.6

max 75 V
103 0.4

2
25 V
10 0.2

typ
typ
10 0
0 100 200 0 4 8 12 16
T j ( o C) VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse

junction temperature. voltage; typical values.

2001 Oct 10 5
Philips Semiconductors Product specification

High-speed diode BAS16

handbook, full pagewidth

tr tp
t
D.U.T. 10%
RS = 50 Ω IF IF t rr
SAMPLING t
OSCILLOSCOPE
V = VR I F x R S R i = 50 Ω

90% (1)
VR
MGA881

input signal output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I 1 kΩ 450 Ω
I V
90%

R S = 50 Ω OSCILLOSCOPE V fr
D.U.T.
R i = 50 Ω

10%
MGA882 t t
tr tp

input output
signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

2001 Oct 10 6
Philips Semiconductors Product specification

High-speed diode BAS16

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

97-02-28
SOT23 TO-236AB 99-09-13

2001 Oct 10 7
Philips Semiconductors Product specification

High-speed diode BAS16

DATA SHEET STATUS

PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information  Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.

2001 Oct 10 8
Philips Semiconductors Product specification

High-speed diode BAS16

NOTES

2001 Oct 10 9
Philips Semiconductors Product specification

High-speed diode BAS16

NOTES

2001 Oct 10 10
Philips Semiconductors Product specification

High-speed diode BAS16

NOTES

2001 Oct 10 11
Philips Semiconductors – a worldwide company

Contact information

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© Koninklijke Philips Electronics N.V. 2001 SCA73

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Printed in The Netherlands 613514/04/pp12 Date of release: 2001 Oct 10 Document order number: 9397 750 08757