PD - 94925

IRGB10B60KDPbF
IRGS10B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD
ULTRAFAST SOFT RECOVERY DIODE
C
Features VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability. IC = 12A, TC=100°C
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics. G
• Positive VCE (on) Temperature Coefficient.
tsc > 10µs, TJ=150°C
• Lead-Free (only the TO-220AB version is currently E
available in a Lead-Free configuration)
n-channel VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

TO-220AB D2Pak TO-262

IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 22
IC @ TC = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current 44
ILM Clamped Inductive Load Current 44 A
IF @ TC = 25°C Diode Continuous Forward Current 22
IF @ TC = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 44
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 156
W
PD @ TC = 100°C Maximum Power Dissipation 62
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.8
RθJC Junction-to-Case - Diode ––– ––– 3.4
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)‚ ––– ––– 40
Wt Weight ––– 1.44 ––– g

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IRGB10B60KDPBF/S/SL10B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 10A, VGE = 15V 5, 6,7
––– 2.20 2.50 V IC = 10A, VGE = 15V TJ = 150°C 9,10,11
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance ––– 7.0 ––– S VCE = 50V, IC = 10A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 3.0 150 µA VGE = 0V, VCE = 600V
––– 300 700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.30 1.45 IC = 10A
8
––– 1.30 1.45 V IC = 10A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ.
Max. Units Conditions Ref.Fig.

Qg Total Gate Charge (turn-on) ––– 38––– IC = 10A

Qge Gate - Emitter Charge (turn-on) ––– 4.3
––– nC VCC = 400V CT1
Qgc Gate - Collector Charge (turn-on) ––– 16.3
––– VGE = 15V
Eon Turn-On Switching Loss ––– 140247 µJ IC = 10A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 250360 VGE = 15V,RG = 47Ω, L = 200µH
Etot Total Switching Loss ––– 390607 Ls = 150nH TJ = 25°C ƒ
td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V
tr Rise Time ––– 20 29 VGE = 15V, RG = 47Ω, L = 200µH CT4
td(off) Turn-Off Delay Time ––– 230262 ns Ls = 150nH, TJ = 25°C
tf Fall Time ––– 23 32
Eon Turn-On Switching Loss ––– 230340 IC = 10A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 350464 µJ VGE = 15V,RG = 47Ω, L = 200µH 13,15
Etot Total Switching Loss ––– 580804 Ls = 150nH TJ = 150°C ƒ WF1WF2

td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V 14, 16

tr Rise Time ––– 20 28 VGE = 15V, RG = 47Ω, L = 200µH CT4
td(off) Turn-Off Delay Time ––– 250274 ns Ls = 150nH, TJ = 150°C WF1
tf Fall Time ––– 26 34 WF2
Cies Input Capacitance ––– 620––– VGE = 0V
Coes Output Capacitance ––– 62––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 22––– f = 1.0MHz
TJ = 150°C, IC = 44A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
VCC = 500V, VGE = +15V to 0V,RG = 47Ω CT2
µs TJ = 150°C, Vp =600V,RG = 47Ω CT3
SCSOA Short Circuit Safe Operting Area 10 ––– –––
VCC = 360V, VGE = +15V to 0V WF4
17,18,19
Erec Reverse Recovery energy of the diode ––– 245 330 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 90 105 ns VCC = 400V, IF = 10A, L = 200µH 20, 21
Irr Diode Peak Reverse Recovery Current ––– 19 22 A VGE = 15V,RG = 47Ω, Ls = 150nH CT4,WF3

Note  to ƒ are on page 15

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IRGB10B60KDPBF/S/SL10B60KD

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET IGBTs, CoPACK
1 - GATE
1 2 3 2 - DRAIN
1- GATE 1- GATE
2- DRAIN
3 - SOURCE 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M 2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010

L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y L INE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

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