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Problem Set 3

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4 views

Problem Set 3

a

Uploaded by

cox14001
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Problem Set #3: Doped Semiconductor

Notes: There are 2 problems in this problem set. You do not need to turn-in this problem set. Practice
solving these problems for midterm preparation.

Reading: Lecture Notes: 4


Textbook: Chapter 4

Problem 1. Doped Si
* Assume equilibrium conditions and complete ionization of dopants.

Let’s assume the Boltzmann approximation is valid when Ev + 3kT ≤ EF ≤ Ec – 3kT.


(1) Calculate the maximum n-type doping concentration in Si for the Boltzmann approximation
to be valid at 300 K. (hint: think about the EF position at this maximum n-type doping)

(2) Calculate the maximum p-type doping concentration in Si for the Boltzmann approximation
to be valid at 300 K. (hint: think about the EF position at this maximum p-type doping)

Problem 2. Doped GaAs


* For GaAs, ni = 2×106 cm-3 at 300 K, ni = 1014 cm-3 at 650 K. mn* = 0.067m0, mp* = 0.48m0,
EG = 1.42 eV at 300 K. Use these mn*, mp*, EG values for 650 K.

A GaAs semiconductor is doped with 1015 cm-3 Si atoms. Assume that 95% of the Si atoms
replace Ga atoms and 5% replace As atoms. Assume complete ionization of dopants.
(1) What are the donor doping concentration (ND) and acceptor doping concentration (NA)? Is
the material n-type or p-type?

(2) What are the equilibrium electron concentration (n) and hole concentration (p) at 300 K?

(3) Given the effective masses of electrons and holes in GaAs, calculate the position of the
intrinsic Fermi energy level with respect to the center of the bandgap at T = 300 K.

(4) For the GaAs sample in (2), calculate the position of the Fermi level (EF) with respect to
the intrinsic Fermi level (Ei). Also, draw the energy band diagram including Ei and EF.

(5) Now if we increase the temperature to 650 K, what are the equilibrium electron and hole
concentrations?

(6) For the GaAs sample in (5), calculate the position of the Fermi level (EF) with respect to
the intrinsic Fermi level (Ei), and draw the energy band diagram including Ei and EF.

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