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Lecture Notes Solid State Physics 4

Lecture Notes Solid State Physics 4

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SOURAV KUMAR PATEL
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48 views

Lecture Notes Solid State Physics 4

Lecture Notes Solid State Physics 4

Uploaded by

SOURAV KUMAR PATEL
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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PYL 102

Thursday, Sept. 26, 2024


Hall effect
The vector equation of motion for a particle of charge q and mass m in a solid, undergoing an
external force Fe and a friction f = -kv , is given by:

The friction force describes the relaxation of the particle due to its interactions (collisions) with
the ions of the crystal lattice and with the other charge carriers. Here, we suppose that if the
external forces go back to zero, the state returns to its equilibrium position exponentially with a
relaxation time.

If the external forces remain constant, the system goes to a stationary state, i.e. dv/dt = 0.
Supposing that the external force is due to a homogeneous electric field E , the new
stationary velocity, or drift velocity of the charge carrier becomes:
The algebraic quantity µ = q /m represents the speed per unit electric field, and is defined as the
mobility of the charge carriers. For a solid containing n charge carriers per unit volume, under the
action of an electric field E and a permanent regime, then the charge carriers move with an
average drift velocity in the same direction as the electric field. In this case, a constant electric
current appears, given by:

Current density j in the presence of an electromagnetic field Assume a random E and B = Bz


along the z axis. By defining the cyclotron frequency =(q/m)Bz and the electric conductivity
defined for B = 0, then it can be shown that in a stationary regime, the average drift velocity of the
particle is given by:
In the presence of a magnetic field, the current density j is generally not parallel to the electric field
E . However, for metals, even under a large applied magnetic field B, the corresponding anisotropy
is very small, in such a way that j ~ E, i.e. Ohm’s law remains valid. The consequences of
anisotropy are mostly relevant in semiconductors, and depend on the geometry of the system.
Hall effect
z

Mobile charges pressed to one side from Lorentz force, immobile charges unaltered

Creates internal electric potential, known as Hall voltage.

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According to the current density equations (below) under a magnetic field, the charge carriers are
deflected towards the sides of the sample. On the other side, a lack of charges carriers creates an
effective charge of opposite side. This charge separation continues until the voltage generated this
way, called Hall Voltage, counters the magnetic force. At the equilibrium state, there is no longer a
drift velocity along the y axis. Therefore, the Hall field EH is defined by the condition jy = 0

RH is therefore an experimental measure of the algebraic quantity describing the mobile charge
carrier density in a conductor, and the sign of the carrier. Also, if  is known, then a measure of RH
can be used to determine the mobility = RH , as long as there is only one type of carrier.
Different types of charge carriers:

In semiconductors, the electric conductivity is often the result of two charge carriers of charges q1
and q2, of density n1 and n2, respectively. The total conductivity and the current can thus be
written:

𝜎 = 𝜎1 + 𝜎2 = 𝑞1 𝑛1 𝜇1 + 𝑞2 𝑛2 𝜇2

j = 𝑗1 + 𝑗2 = 𝑞1 𝑛1 𝑣1 + 𝑞2 𝑛2 𝑣2

At room temperature, the relaxation time  is of the order 10-14-10-15 s, so the term ()2 are negligible.

and that the Hall condition jy = 0 implies


two different charge carriers; electrons and holes with 𝑞1 = −𝑞2 and n1= n and
n2 = p

In semiconductors, the value and sign of RH is strongly dependent on the dopant


density ("impurities"), RH can even be zero.
Curvature of E-k diagram determines effective mass!

Electrons near the top of the valence band behave as if they have negative mass.
The dispersion relation near the top of the valence band is E = ℏ2k2/(2m*) with negative effective
mass. So, electrons near the top of the valence band behave like they have negative mass.

Force = mass × acceleration, a negative-effective-mass electron near the top of the valence band
would move the opposite direction as a positive-effective-mass electron near the bottom of the
conduction band, in response to a given electric or magnetic force.
Positively-charged holes as a shortcut for calculating the total current of an
almost-full band. Hole is a positive-charge, positive-mass quasiparticle.

Hole carries a positive charge, and responds to electric and magnetic fields as if it had a
positive charge and positive mass.
Because a particle with positive charge and positive mass respond to electric and magnetic
fields in the same way as a particle with a negative charge and negative mass.

Example: silver ribbon whose cross section is 1.0 cm by 0.20 cm. The ribbon carries a
current of 100 A from left to right, and it lies in a uniform magnetic field of magnitude 1.5 T.
Using a electron density density value of n=5.9×1028 per cubic meter,
find the Hall potential between the edges of the ribbon.
Applications
• Measurement can tell about charge carrier mobility, concentration

• Conversely, knowing the above allows for sensitive measurement


of an external B-field

• Resistant to outside contaminants unlike optical,


electromechanical testing

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Hall Probes

Hall Effect sensors capable of switching very fast, does not distort like capacitative or inductive
sensors (contactless sensing)

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