TC75S54F/FU/FE

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TC75S54F,TC75S54FU,TC75S54FE
Single Operational Amplifier

The TC75S54F/TC75S54FU/TC75S54FE is a CMOS single-

operation amplifier which incorporates a phase compensation
TC75S54F
circuit. It is designed for use with a low-voltage, low-current
power supply; this differentiates this device from conventional
general-purpose bipolar op-amps.

Features
• Low-voltage operation : VDD = ±0.9~3.5 V or 1.8~7 V
• Low-current power supply : IDD (VDD = 3 V) = 100 μA (typ.)
• Built-in phase-compensated op-amp, obviating the need for
any external device TC75S54FU
• Ultra-compact package

TC75S54FE

Absolute Maximum Ratings (Ta = 25°C)

Weight
Characteristics Symbol Rating Unit SSOP5-P-0.95 : 0.014 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Supply voltage VDD, VSS 7 V SON5-P-0.50 : 0.003 g (typ.)
Differential input voltage DVIN ±7 V
Input voltage VIN VDD~VSS V

Power TC75S54F/FU 200

PD mW
dissipation TC75S54FE 100
Operating temperature Topr −40~85 °C
Storage temperature Tstg −55~125 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

1 2007-11-01
 TC75S54F/FU/FE
Marking (top view) Pin Connection (top view)

5 4 VDD OUT
5 4

SE

1 2 3
1 2 3 IN (+) VSS IN (−)

Electrical Characteristics

DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)

Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Input offset voltage VIO 1 RS = 1 kΩ ⎯ 2 10 mV
Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA
Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA
Common mode input voltage CMVIN 2 ⎯ 0.0 ⎯ 2.1 V
Voltage gain(open loop) GV ⎯ ⎯ 60 70 ⎯ dB
VOH 3 RL >
= 100 kΩ 2.9 ⎯ ⎯
Maximum output voltage V
VOL 4 RL >
= 100 kΩ ⎯ ⎯ 0.1
Common mode input signal
CMRR 2 VIN = 0.0~2.1 V 60 70 ⎯ dB
rejection ratio
Supply voltage rejection ratio SVRR 1 VDD = 1.8~7.0 V 60 70 ⎯ dB
Supply current IDD 5 ⎯ ⎯ 100 200 μA
Source current Isource 6 ⎯ 100 200 ⎯ μA
Sink current Isink 7 ⎯ 200 700 ⎯ μA

DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C)

Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Input offset voltage VIO 1 RS = 10 kΩ ⎯ 2 10 mV
Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA
Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA
Common mode input voltage CMVIN 2 ⎯ 0.2 ⎯ 0.9 V
Voltage gain (open loop) GV ⎯ ⎯ 60 70 ⎯ dB
VOH 3 RL >
= 100 kΩ 1.7 ⎯ ⎯
Maximum output voltage V
VOL 4 RL >
= 100 kΩ ⎯ ⎯ 0.1
Supply current IDD 5 ⎯ ⎯ 80 160 μA
Source current Isource 6 ⎯ 80 160 ⎯ μA
Sink current Isink 7 ⎯ 200 600 ⎯ μA

2 2007-11-01
 TC75S54F/FU/FE
AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)
Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Slew rate SR ⎯ ⎯ ⎯ 0.7 ⎯ V/μs
Unity gain cross frequency fT ⎯ ⎯ ⎯ 0.9 ⎯ MHz

AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C)

Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Slew rate SR ⎯ ⎯ ⎯ 0.6 ⎯ V/μs
Unity gain cross frequency fT ⎯ ⎯ ⎯ 0.8 ⎯ MHz

Test Circuit
1. SVRR, VIO

VDD • SVRR
For each of the two VDD values, measure the VOUT value, as
indicated below, and calculate the value of SVRR using the
RF
equation shown.
When VDD = 1.8 V, VDD = VDD1 and VOUT = VOUT1
RS When VDD = 7.0 V, VDD = VDD2 and VOUT = VOUT2
VOUT ⎛ V 1 − V OUT 2 RS ⎞
SVRR = 20 log ⎜ OUT × ⎟
RS ⎜ V 1− V 2 RF + RS ⎟
⎝ DD DD ⎠
RF

• VIO
VDD/2
Measure the value of VOUT and calculate the value of VIO using
the following equation.

⎛ VDD ⎞ RS
VIO = ⎜⎜ V OUT − ⎟×
⎝ 2 ⎟⎠ RF + RS

2. CMRR, CMVIN

VDD • CMRR
Measure the VOUT value, as indicated below, and calculate the
RF value of the CMRR using the equation shown.
When VIN = 0.0 V, VIN = VIN1 and VOUT = VOUT1
When VIN = 2.1 V, VIN = VIN2 and VOUT = VOUT2
RS
⎛ V 1 − V OUT 2 RS ⎞
VOUT CMRR = 20 log ⎜ OUT × ⎟
⎜ V 1 − VIN 2 RF + RS ⎟
⎝ IN ⎠
RS
VIN
RF

• CMVIN
VDD/2 Input range within which the CMRR specification guarantees
VOUT value (as varied by the VIN value).

3 2007-11-01
 TC75S54F/FU/FE
3. VOH

VDD • VOH

VDD
VIN1 = − 0.05 V
2

VDD
VOH VIN2 = + 0.05 V
2

RL
VIN1 VIN2

4. VOL

VDD
• VOL

VDD
VIN1 = + 0.05 V
2
RL

VOL VDD
VIN2 = − 0.05 V
2

VIN1 VIN2

5. IDD

VDD

M IDD

VDD/2

6. Isource 7. Isink

VDD

VDD

4 2007-11-01
 TC75S54F/FU/FE

IDD – VDD GV – f
200 120
VSS = GND VDD = 3 V
VIN = VDD/2 VSS = GND
Ta = 25°C
Ta = 25°C
160
(μA)

GV (dB)
80
Supply current IDD

120

Voltage gain
80
40

40

0 0
0 1 2 3 4 5 6 7 10 100 1k 10 k 100 k 1M 10 M

Supply voltage VDD (V) Frequency f (Hz)

Isink – VDD VOL – Isink

1000 2.0
VSS = GND VDD = 1.8 V
VSS = GND
Ta = 25°C
VOL (V)

Ta = 25°C
800 1.6
(μA)

Low-level output voltage

Sink current Isink

600 1.2

400 0.8

200 0.4

0 0
0 1 2 3 4 5 6 7 0 200 400 600 800 1000

Supply voltage VDD (V) Sink current Isink (μA)

VOL – Isink VOL – Isink

3 5
VDD = 5.0 V
VDD = 3.0 V VSS = GND
VOL (V)

VOL (V)

VSS = GND Ta = 25°C

4
Ta = 25°C

2
Low-level output voltage

Low-level output voltage

2
1

0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

Sink current Isink (μA) Sink current Isink (μA)

5 2007-11-01
 TC75S54F/FU/FE

Isource – VDD VOH – Isource

500 2.0
VSS = GND VDD = 1.8 V
VSS = GND

(V)
Ta = 25°C
Ta = 25°C
400
(μA)

1.6

High-level output voltage VOH

Source current Isource

300 1.2

200 0.8

100 0.4

0 0
0 1 2 3 4 5 6 7 0 40 80 120 160 200 240 280

Supply voltage VDD (V) Source current Isource (μA)

VOH – Isource VOH – Isource

3 5
VDD = 3.0 V VDD = 5.0 V
VSS = GND
VSS = GND
(V)
(V)

Ta = 25°C
Ta = 25°C
4
High-level output voltage VOH
High-level output voltage VOH

2
1

0 0
0 40 80 120 160 200 240 280 0 40 80 120 160 200 240 280

Source current Isource (μA) Source current Isource (μA)

VOH – RL VOH – RL
2.0 3
VDD = 1.8 V
VDD = 3.0 V
VSS = GND
(V)

(V)

Ta = 25°C VSS = GND

1.6
Ta = 25°C
High-level output voltage VOH

High-level output voltage VOH

2
1.2

0.8
1

0.4

0 0
1k 10 k 100 k 1M 1k 10 k 100 k 1M

Load resistance RL (Ω) Load resistance RL (Ω)

6 2007-11-01
 TC75S54F/FU/FE

VOH – RL PD – Ta
5 300
VDD = 5.0 V This data was obtained from an unmounted
VSS = GND standalone IC. If the IC is mounted on a
(V)

PCB, its power dissipation will be greater.

Ta = 25°C

(mW)
4 Note that, depending on the PCB’s thermal
High-level output voltage VOH

characteristics, the curves may differ

substantially from those shown.
200

Power dissipation PD
3

2
100

0 0
1k 10 k 100 k 1M −40 0 40 80 120

Load resistance RL (Ω) Ambient temperature Ta (°C)

7 2007-11-01
 TC75S54F/FU/FE
Package Dimensions

Weight: 0.014 g (typ.)

8 2007-11-01
 TC75S54F/FU/FE
Package Dimensions

Weight: 0.006 g (typ.)

9 2007-11-01
 TC75S54F/FU/FE
Package Dimensions

Weight: 0.003 g (typ.)

10 2007-11-01
 TC75S54F/FU/FE

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

11 2007-11-01