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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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34 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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wakawuluh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1136

DESCRIPTION
·With TO-220C package
·High collector-base breakdown voltage
: VCBO=200V(min)

APPLICATIONS
·For power switching and TV vertical
deflection output applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 200 V

VCEO Collector-emitter voltage Open base 80 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 4 A

ICM Collector current-Peak 5 A

Ta=25 1.8
PC Collector power dissipation W
TC=25 30

Tj Junction temperature 150

Tstg Storage temperature -45~150

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1136

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 80 V

V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V

VBEsat Base-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V

ICEO Collector cut-off current VCE=200V; IB=0 50

IEBO Collector cut-off current VEB=5V; IC=0 50

hFE DC current gain IC=4A ; VCE=5V 20

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1136

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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