Experiment Electronic Signal and System BSC Electronic

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EXPERIMENT NO.

Rohit oli
ROLL NO:-20/430
SEMICONDUCTOR FABRICATION

Aim : Study the temperature dependence of resistivity of a semiconductor


(Four probe method) and to determine band gap of experimental material
(Ge).

Apparatus Required : Four probe apparatus, sample (a Ge crystal in form


of a chip), oven, thermometer (260𝑜 ) constant power supply, oven power
supply, panel meters for measurement of current and voltage.

Circuit Diagram :

Formula Used:
V
Resistivity(ohm meter) = p0 = ( ) × 2 × Ω × s
I
w 2×s
correction factor = G7 ( s ) = × ln(2)
w

po
modifier Resistivity = p = w
G7 ( s )

Slope = 𝐴𝐶/ 𝐵𝐶
EXPERIMENT NO. 4

Band gap(Eg ) =2.3026*103 *2*kB *slope eV,(Take Boltzman constant


kB=8.617*10−5 eVK −1 ).

Calculations :

Thickness of the sample(w)=0.69mm, Distance between the probe(s)=2mm


w 2×s
G7 ( s )= × ln(2) = 5.797 × 0.6931 = 4.018
w

𝑉 𝑉
𝑝0 = ( ) × 2 × Ω × 𝑠 = ( ) × 0.01256
𝐼 𝐼
0.47−0.55
Slope= = 1.6
2.15−2.2

Band gap(Eg ) =2.3026*103 *2*kB *slope eV =2.3026*103 *2*8.617*10−5 ∗ 1.6

Band gap(Eg ) = 0.63492 eV

Observation: I=1mA

V(mV) T(oC) 𝑝0 P(ohm-cm) 1000/T Log(p)


65 50 0.8164 2.031 20 0.3077
64 55 0.8038 2 18.18 0.3010
62.7 60 0.7875 1.9599 16.67 0.2923
61 65 0.7661 1.9 15.38 0.2787
58.8 70 0.7385 1.837 14.28 0.2641
57.1 75 0.7171 1.784 13.33 0.2513
56.6 80 0.7108 1.769 12.5 0.2477
55.3 85 0.6945 1.728 11.76 0.2375
53 90 0.6656 1.656 11.11 0.2190
50.3 95 0.6317 1.572 10.52 0.1964
47.2 100 0.5928 1.475 10 0.16879
43.9 105 0.5513 1.372 9.52 0.1373

Graph :
EXPERIMENT NO. 4

Result : The temperature dependence of the resistivity of


semiconductor (germanium) chip is as shown in the graph . The
resistivity decreases exponentially with the increase in T. That is as at
low temperatures resistivity is more and at high temperatures the
resistivity is less.

The energy band gap for the given semiconductor (germanium) is =


0.63492 eV.

Precautions :
1.Use groves as the substance is heated.

2.Measure the distance accurately.

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