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MOSFET (Basics)

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Sneha Rana
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79 views31 pages

MOSFET (Basics)

pdf on mosfet

Uploaded by

Sneha Rana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOSFET

Presented by: Sneha Rana & Shivani


PICS COVERED
TO

What is a MOSFET?
Types of MOSFET
Construction
Working
Introduction
M- Metal ; O- Oxide ;
S-Semiconductor

Generally a three terminal device


since the body is connected with
the source terminal.

The name MOS typically refers to a


metal gate, oxide insulation and
silicon semiconductor.
Fig.1: MOSFET structure
PES OF MOSFE
TY T

DEPLETION ENHANCEMENT
n-channel n-channel

p-channel p-channel
Depletion type MOSFET
A MOSFET that normally turns ON
without applying any gate voltage
when you connect is known as a
depletion mode MOSFET.
The flow of current is from the drain
terminal to the source.
When there is no voltage across the
gate terminal, the channel shows its
maximum conductance.
Whereas the voltage across the gate
terminal is either positive or negative
then the channel conductivity
decreases

Fig.2: De-MOSFET
n-channel D-MOSFET

Fig.3: N-Channel D-MOSFET


Construction
P-Type semiconductor material is used
as substrate. The source and drain are
connected to n-type region through
metallic contact by n-channel.The gate
terminal is insulated from the n-channel
by a thin SiO2 layer

The fact that SiO2 layer is an insulating


layer means that there is no direct
electrical connection between the gate
and channel of MOSFET

Fig.4:N-Channel D-MOSFET
Basic operation
Case 1: connect the G-terminal to
the ground and apply a +ve voltage
at the drain and source. On applying
+ve Vds, the electrons in n channel
will move towards the +ve drain
terminal, and the Id will start flowing
from D to S
On increasing Vds keeping Vgs=0
after a while Id will become constant
known as Saturation Current.
Fig.5: Vgs=0 and applied voltage VDD
Vgs=0 & Vds>0; current flows
On increasing Vds, ID=IS=IDSS
Case 2: Apply Vgs<0, formation of
electron-hole pairs in N channel. On
increasing -ve potential at gate more
electron-hole pairs will increase
decreasing the number of free
electrons in N channel
As a result ID decreases and will
become zero after a while
This voltage is known as Pinch-off
voltage or VP

Fig.6: Reduction in free carriers in channel due to -ve potential


at G
At pinch-off, VGS=VP, VDS>0 and ID=0
Case 3: Applying Vgs>0, due to
reverse leakage current
electrons from P type will
attract towards gate terminal;
increasing the concentration of
electrons in N channel

As a result ID increases and


exceeds the saturation current Fig.7

When Vgs>0 & Vds>0 then ID>IDSS


CIRCUIT SYMBOL OF N CHANNEL D-MOSFET

Fig.8: N-Channel D-MOSFET SYMBOL


P-CHANNEL D-MOSFET
The current between drain
and source is controlled by
the gate voltage but there
is a difference. Channel is
present from the
beginning when no
voltage is applied.
Applying a -ve voltage, the channel
depletes and hence the width of the
channel decreases and hence the
resistance increases decreasing the
amount of current flowing.
Fig.9
CIRCUIT SYMBOL OF P CHANNEL D-MOSFET
Enhancement type MOSFET
Enhancement mode means that whenever the voltage
toward the gate terminal of this MOSFET increases,
then current flow will be increased from drain to source
until it reaches its highest level.
Features: Low power dissipiation and small geometry
There is no pathway/channel in between Drain and source
when no voltage is applied between gate and source terminal.
So applying a voltage at gate to source terminal will enhance
the channel making it capable of conducting current
Construction
A Substrate(SS) is made up of p-type
semiconductor and is internally connected
with source terminal or sometimes brought
out in a form of fourth terminal for external
control of its potential level.

The other three terminals, i.e., drain, gate


and source as connected to each other by n-
doped region through metallic contacts but
note in Fig. the absence of a channel
between two n-doped regions. This is the
primary difference between depletion type
and enhancement type MOSFETS.
Fig. N-Channel E-MOSFET
Vgs is at higher potential the free electrons will move towards to gate
region
SiO2 is dielectric in nature so it will allow more free electrons to
accumulate near the gate terminal in less applied voltage
On increasing Vgs the atoms inside P substrate break due to a high electric
field, now the free electrons generated will fill the holes near G and holes
get repelled increasing N type behavior near G. After sometime N channel
has been created between two N-wells. This Voltage is called Threshold
voltage or VT.

VGS>VT an N channel is induced


Fig.10
Fig. Step (1) Channel creation for free movement of
electrons
Fig.11
Applying a secondary voltage source between D and S,
keeping D at higher potential= Vds, on applying this voltage the
Drain current starts flowing equal to ID.
When VGS>VT and VDS>0 ; ID starts flowing
Fig.12
On increasing -ve voltage at D a reverse bias is formed at PN junction
near D, this results in a thick depletion region near PN junction
Hence on increasing Vds the channel becomes narrow near D and Id will
face more resistance and it flows with constant value.
This situation is called Pinch-off and the drain current
becomes saturation current
the voltage at which we get saturation current is called
saturation voltage

Pinch-off is reached when VGS>0 (constant), Vds=


Vds(SAT), ID=ID(SAT)
CIRCUIT SYMBOL OF N-CHANNEL E-MOSFET

Fig.13
CONSTRUCTION OF P-CHANNEL

The difference between N anp P E-MOSFET is


polarities of applied voltages
Here we have to keep the Gate at lower potential
which means free holes will move towards G and
will not escape.
Here the channel is created between two P-wells
when |Vgs| >|Vt| a P channel is induced

Fig.14
Fig.15
CIRCUIT SYMBOL OF P-CHANNEL E-MOSFET

Fig.16
Comparison
In D-MOSFET , a secondary voltage is applied to
deplete the region under the gate of charge carriers,
thereby pinching off the current.
In E-MOSFET, a secondary voltage is used to enhance
charge carriers beneath the gate, thereby allowing
current to flow.
Whereas the first type has to deplete a cross section
of the semiconductor of carriers in order to switch the
circuit's status, the second type only has to enhance a
small region near the gate. Thus, enhancement mode
MOSFETS are easier to control and can switch states
faster than depletion mode MOSFETS.
Fig.17
THANK YOU

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