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Handout 13

ICT mu engineering 1st floor 1st sem

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40 views6 pages

Handout 13

ICT mu engineering 1st floor 1st sem

Uploaded by

chotaimanav17
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Faculty of Engineering and Technology

Information and Communication Technology


Basics of Electronics Engineering (01EC1101)

Session-3 Assignment

Name:
Enroll No:
AIM: To plot VI characteristics of PN junction diode.

Objective:
1. To understand PN junction, Barrier potential, Cut-in voltage, Current flow in Forward and
Reverse bias (silicon and germanium) PN diode.
2. To analyze the current flow in forward and reverse bias conditions.
3. To analyze static and dynamic impedances in forward and reverse bias.
4. To understand ideal model, simplified model and piecewise linear model for analysis
purpose.

Outcome: Students will be able to,


1. Identify diode with anode and cathode terminals and learn the connections for forward bias
and reverse bias condition.
2. Measure the voltage across diode and current through diode.
3. Develop the I-V Characteristics of diode.
4. Appreciate the importance of resistance of diode in forward bias and reverse bias condition.

Components and Apparatus:


1. Diode 1N4007
2. 100Ω Resistor
3. DC power Supply
4. Multimeters

Task-1 Tabulate V-I values for PN diode (Forward Bias and Reverse Bias) (simulate in Multi-
sim)Circuit Schematic:
Faculty of Engineering and Technology
Information and Communication Technology
Basics of Electronics Engineering (01EC1101)

Observation Table:
Forward Bias:
Supply Voltage Diode Forward Voltage Drop Diode Forward Current
Vs (Volts) Vd (Volts) Id (mili-ampere)
0 0 0
0.1 0.002 0.099
0.2 0.015 0.198
0.3 0.072 0.292
0.4 0.265 0.373
0.5 0.68 0.431
0.6 1.284 0.471
0.7 2.005 0.499
0.8 2.798 0.52
0.9 3.634 0.536
1 4.5 0.549
1.1 5.388 0.561
1.2 6.291 0.57
1.3 7.205 0.579
1.4 8.13 0.587
1.5 9.062 0.593

Reverse Bias:
Supply Voltage Diode Reverse Voltage Drop Diode Reverse
Vs (Volts) Vd (Volts) Saturation Current
Is (micro-ampere)
0 0 0
1 -0.99 -0.67
2 -2 -0.671
3 -3 -.0672
4 -4 -0.673
5 -5 -0.674
6 -6 -0.675
7 -7 -0.676
8 -8 -0.677
9 -9 -0.678
10 -10 -0.679
Faculty of Engineering and Technology
Information and Communication Technology
Basics of Electronics Engineering (01EC1101)

Task-2 Plot VI Characteristics (from the table): (Plot using MS-excel or Libre)

Task-3 For the above VI characteristic draw the piece-wise linear model.
Faculty of Engineering and Technology
Information and Communication Technology
Basics of Electronics Engineering (01EC1101)
sss

Task-4 Calculate Static and Dynamic Resistance: (From readings of VI characteristics)


Faculty of Engineering and Technology
Information and Communication Technology
Basics of Electronics Engineering (01EC1101)
𝑉𝐷
DC or Static Resistance: 𝑅𝐷 =
𝐼𝐷
Diode Forward Diode Forward Static Resistance
Voltage Drop Current RD
Vd (Volts) Id (mili-ampere) Ohms
0.2 0.0154 12.883
0.4 0.265 1.4075
0.7 2.005 02488

∆𝑉𝐷
AC or Dynamic Resistance: 𝑟𝑑 =
∆𝐼𝐷

Diode Forward Diode Forward Dynamic Resistance


Voltage Drop Current rd
∆Vd (Volts) ∆Id (mili-ampere) Ohms
0.2 – 0.4 -0.2496 0.6995
0.4–0.7 -1.74 0.072

Task 5: Find the cut in voltage in forward bias diode using graph. Kindly refer following diagram
for more details about cut-in-voltage.
Faculty of Engineering and Technology
Information and Communication Technology
Basics of Electronics Engineering (01EC1101)

Chart Title

10

0
1 2 3 Forward
Diode 4 5
Voltage 6
Drop Vd7(Volts)8 9 10 Forward
Diode 11 12
Current13 14 15
Id (mili-ampere) 16

Conclusion:
______________________________________________________________________________
______________________________________________________________________________

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